XThin® LEDs CxxxXT290-Sxx00-A Cree’s XThin LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity LEDs. These LED chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and require only a single wire bond connection. These vertically structured LED chips are approximately 115 microns in height and require a low forward voltage. Cree’s XT™ chips are tested for conformity to optical and electrical specifications and the ability to withstand 1000V ESD. Applications for XThin LEDs include next-generation mobile appliances for use in their LCD backlights and digital camera flash where brightness, sub-miniaturization, and low power consumption are required. FEATURES • XThin LED Performance • • • 460 & 470 nm –– –– –– –– –– • • • • APPLICATIONS XT-12™ XT-16™ XT-18™ XT-21™ XT-24™ – – – – – 12.0 16.0 18.0 21.0 24.0 mW mW mW mW mW 505nm – 8.5 mW min. 527nm – 7.0 mW min. min. min. min. min. min. Thin 115 µm Chip Low Forward Voltage - 3.2 Typical at 20 mA Single Wire Bond Structure Class 2 ESD Rating • • • • Cellular Phone LCD Backlighting Digital Camera Flash for Mobile Appliance Mobile Phone Key Pads –– White LEDs –– Blue LEDs –– Green LEDs Automotive Dashboard Lighting LED Video Displays Audio Product Display Lighting Traffic Signals CxxxXT290-Sxx00-A Chip Diagram R3BV, Rev. H Datasheet: CP Top View Bottom View G•SiC LED Chip 300 x 300 μm Gold Bond Pad 105 μm Diameter Die Cross Section Backside Metalization Cathode (-) SiC Substrate t = 115µm Anode (+) Subject to change without notice. www.cree.com 1 Maximum Ratings at TA = 25°C Notes 1&3 CxxxXT290-Sxx00-A DC Forward Current 30mA Peak Forward Current (1/10 duty cycle @ 1kHz) 100mA LED Junction Temperature 125°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C Storage Temperature Range -40°C to +100°C Electrostatic Discharge Threshold (HBM) 1000V Electrostatic Discharge Classification (MIL-STD-883E)Note 2 Class 2 Note 2 Typical Electrical/Optical Characteristics at T = 25°C, If = 20mA Part Number Forward Voltage (Vf, V) Note 3 Reverse Current [I(Vr=5V), μA] Full Width Half Max (λD, nm) Min. Typ. Max. Max. Typ. C460XT290-Sxx00-A 2.7 3.2 3.7 2 21 C470XT290-Sxx00-A 2.7 3.2 3.7 2 22 C505XT290-S0100-A 2.7 3.2 3.7 2 30 C527XT290-S0100-A 2.7 3.2 3.7 2 35 Mechanical Specifications CxxxXT290-Sxx00-A Description Dimension Tolerance P-N Junction Area (μm) 250 x 250 ± 25 Top Area (μm) 200 x 200 ± 25 Bottom Area (μm) 300 x 300 ± 25 Chip Thickness (μm) 115 ± 15 Au Bond Pad Diameter (μm) 105 -5, +15 Au Bond Pad Thickness (μm) Back Contact Metal Area (μm) Back Contact Metal Thickness (μm) (Au/Sn) Note 4 1.2 ± 0.5 210 x 210 ± 25 1.7 ± 0.3 Notes: 1. 2. 3. 4. 5. 6. 7. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree Xthin Applications Note for more assembly process information. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an integrating sphere using Illuminance E. Back contact metal is 80%/20% Au/Sn by weight, with target eutectic melting temperature of approximately 282°C. See XBright® Applications Note for detailed packaging recommendations. Caution: To avoid leakage currents and achieve maximum output efficiency, die attach material must not contact the side of the chip. See Cree XBright Applications Note for more information. XThin chips are shipped with the junction side down, not requiring a die transfer prior to die attach. Specifications are subject to change without notice. Copyright © 2003-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC, XThin and XBright are registered trademarks, and XT, XT-12, XT-16, XT-18, XT-21 and XT-24 are trademarks of Cree, Inc. 2 CPR3BV Rev. H Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips Standard Bins for CxxxXT290-Sxx00-A LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxXT290-Sxx00-A) orders may be filled with any or all bins (CxxxXT290-01xx-A) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 20mA. Radiant Flux XT-24 C460XT290-S2400-A C460XT290-0117-A 24.0 mW 455 nm C460XT290-0118-A 457.5 nm Radiant Flux XT-21 Radiant Flux 460 nm Dominant Wavelength C460XT290-0120-A 462.5 nm 24.0 mW C460XT290-0117-A C460XT290-0118-A C460XT290-0119-A C460XT290-0120-A C460XT290-0113-A C460XT290-0114-A C460XT290-0115-A C460XT290-0116-A 21.0 mW 455 nm 457.5 nm 460 nm Dominant Wavelength 462.5 nm 465 nm C460XT290-S1800-A 24.0 mW 21.0 mW C460XT290-0117-A C460XT290-0118-A C460XT290-0119-A C460XT290-0120-A C460XT290-0113-A C460XT290-0114-A C460XT290-0115-A C460XT290-0116-A C460XT290-0109-A C460XT290-0110-A C460XT290-0111-A C460XT290-0112-A 18.0 mW 455 nm 457.5 nm XT-16 460 nm Dominant Wavelength 462.5 nm 465 nm C460XT290-S1600-A 24.0 mW 21.0 mW 18.0 mW C460XT290-0117-A C460XT290-0118-A C460XT290-0119-A C460XT290-0120-A C460XT290-0113-A C460XT290-0114-A C460XT290-0115-A C460XT290-0116-A C460XT290-0109-A C460XT290-0110-A C460XT290-0111-A C460XT290-0112-A C460XT290-0105-A C460XT290-0106-A C460XT290-0107-A C460XT290-0108-A 16.0 mW 455 nm 457.5 nm 460 nm Dominant Wavelength 462.5 nm Copyright © 2003-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC, XThin and XBright are registered trademarks, and XT, XT-12, XT-16, XT-18, XT-21 and XT-24 are trademarks of Cree, Inc. 3 465 nm C460XT290-S2100-A XT-18 Radiant Flux C460XT290-0119-A CPR3BV Rev. H 465 nm Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips Standard Bins for CxxxXT290-Sxx00-A (continued) XT-12 C460XT290-S1200-A Radiant Flux 24.0 mW 21.0 mW 18.0 mW 16.0 mW C460XT290-0117-A C460XT290-0118-A C460XT290-0119-A C460XT290-0120-A C460XT290-0113-A C460XT290-0114-A C460XT290-0115-A C460XT290-0116-A C460XT290-0109-A C460XT290-0110-A C460XT290-0111-A C460XT290-0112-A C460XT290-0105-A C460XT290-0106-A C460XT290-0107-A C460XT290-0108-A C460XT290-0101-A C460XT290-0102-A C460XT290-0103-A C460XT290-0104-A 12.0 mW 455 nm 457.5 nm Radiant Flux XT-21 Radiant Flux 462.5 nm C470XT290-0113-A 21.0 mW 465 nm C470XT290-0114-A 467.5 nm C470XT290-0115-A 470 nm Dominant Wavelength C470XT290-0116-A 472.5 nm 475 nm C470XT290-S1800-A 21.0 mW C470XT290-0113-A C470XT290-0114-A C470XT290-0115-A C470XT290-0116-A C470XT290-0109-A C470XT290-0110-A C470XT290-0111-A C470XT290-0112-A 18.0 mW 465 nm 467.5 nm XT-16 470 nm Dominant Wavelength 472.5 nm 475 nm C470XT290-S1600-A 21.0 mW 18.0 mW C470XT290-0113-A C470XT290-0114-A C470XT290-0115-A C470XT290-0116-A C470XT290-0109-A C470XT290-0110-A C470XT290-0111-A C470XT290-0112-A C470XT290-0105-A C470XT290-0106-A C470XT290-0107-A C470XT290-0108-A 16.0 mW 465 nm 467.5 nm 470 nm Dominant Wavelength 472.5 nm Copyright © 2003-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC, XThin and XBright are registered trademarks, and XT, XT-12, XT-16, XT-18, XT-21 and XT-24 are trademarks of Cree, Inc. 4 465 nm C470XT290-S2100-A XT-18 Radiant Flux 460 nm Dominant Wavelength CPR3BV Rev. H 475 nm Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips Standard Bins for CxxxXT290-Sxx00-A (continued) XT-12 C470XT290-S1200-A Radiant Flux 21.0 mW 18.0 mW 16.0 mW C470XT290-0113-A C470XT290-0114-A C470XT290-0115-A C470XT290-0116-A C470XT290-0109-A C470XT290-0110-A C470XT290-0111-A C470XT290-0112-A C470XT290-0105-A C470XT290-0106-A C470XT290-0107-A C470XT290-0108-A C470XT290-0101-A C470XT290-0102-A C470XT290-0103-A C470XT290-0104-A 12.0 mW 465 nm 467.5 nm 470 nm Dominant Wavelength 472.5 nm 475 nm Radiant Flux C505XT290-S0100-A 10.5 mW C505XT290-0103-A C505XT290-0104-A C505XT290-0101-A C505XT290-0102-A 8.5 mW 500 nm 505 nm Dominant Wavelength 510 nm Radiant Flux C527XT290-S0100-A 10.0 mW 9.0 mW 8.0 mW C527XT290-0110-A C527XT290-0111-A C527XT290-0112-A C527XT290-0107-A C527XT290-0108-A C527XT290-0109-A C527XT290-0104-A C527XT290-0105-A C527XT290-0106-A C527XT290-0101-A C527XT290-0102-A C527XT290-0103-A 7.0 mW 520 nm 525 nm 530 nm Dominant Wavelength 535 nm Copyright © 2003-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC, XThin and XBright are registered trademarks, and XT, XT-12, XT-16, XT-18, XT-21 and XT-24 are trademarks of Cree, Inc. 5 CPR3BV Rev. H Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips Characteristic Curves These are representative measurements for the XThin product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Wavelength Shift vs Forward Current Forward Current vs. Forward Voltage 12.00 30 460nm 10.00 25 8.00 527nm 20 Shift (nm) If (mA) 6.00 15 505nm 4.00 2.00 10 0.00 5 -2.00 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5 10 15 20 25 30 -4.00 Vf (V) If (mA) Relative Intensity vs Peak Wavelength Relative Intensity vs Forward Current 100 140 120 Relative Intensity (%) 80 % Intensity 100 80 60 60 40 40 20 20 0 0 5 10 15 20 25 30 400 If(mA) Copyright © 2003-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC, XThin and XBright are registered trademarks, and XT, XT-12, XT-16, XT-18, XT-21 and XT-24 are trademarks of Cree, Inc. 6 CPR3BV Rev. H 500 600 Wavelength (nm) Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips