Sanyo ATP405-TL-H General-purpose switching device application Datasheet

ATP405
Ordering number : ENA1458A
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
ATP405
General-Purpose Switching Device
Applications
Features
•
•
ON-resistance RDS(on)=25mΩ (typ.)
10V drive
•
•
Input capacitance Ciss=4000pF (typ.)
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
Unit
100
V
±20
V
Allowable Power Dissipation
ID
IDP
PD
70
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
148
mJ
40
A
Drain Current (Pulse)
Avalanche Current *2
PW≤10μs, duty cycle≤1%
Tc=25°C
40
A
160
A
Note : *1 VDD=30V, L=100μH, IAV=40A
*2 L≤100μH, Single pulse
Package Dimensions
Product & Package Information
unit : mm (typ)
7057-001
• Package
: ATPAK
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ATP405-TL-H
1.5
6.5
Packing Type: TL
Marking
ATP405
0.4
0.4
0.5
4
4.6
2.6
6.05
4.6
9.5
7.3
LOT No.
TL
Electrical Connection
2.3
0.6
2.3
0.55
0.7
3
0.1
0.5
1
0.8
1.7
2,4
2
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
1
3
SANYO : ATPAK
http://semicon.sanyo.com/en/network
62712 TKIM/42209QA MSIM TC-00001943 No. A1458-1/7
ATP405
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
IDSS
ID=1mA, VGS=0V
VDS=100V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
Forward Transfer Admittance
IGSS
VGS(off)
| yfs |
Static Drain-to-Source On-State Resistance
RDS(on)
ID=20A, VGS=10V
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Rise Time
Turn-OFF Delay Time
min
typ
Unit
max
100
V
2.0
VDS=10V, ID=20A
10
μA
±10
μA
3.5
62
V
S
25
33
mΩ
4000
pF
300
pF
Crss
170
pF
td(on)
tr
38
ns
125
ns
220
ns
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=20V, f=1MHz
See specified Test Circuit.
VDS=60V, VGS=10V, ID=40A
Switching Time Test Circuit
10V
0V
Ratings
Conditions
150
ns
68
nC
14
nC
15
IS=40A, VGS=0V
nC
0.9
1.2
V
Avalanche Resistance Test Circuit
VDD=60V
VIN
L
ID=20A
RL=3Ω
VIN
D
PW=10μs
D.C.≤1%
≥50Ω
VOUT
ATP405
10V
0V
G
VDD
50Ω
ATP405
P.G
50Ω
S
Ordering Information
Device
ATP405-TL-H
Package
Shipping
memo
ATPAK
3,000pcs./reel
Pb Free and Halogen Free
No. A1458-2/7
ATP405
ID -- VDS
V
20
1.5
2.0
2.5
Tc=75°C
30
25°C
20
--25°C
10
2
3
4
5
6
7
8
9
Gate-to-Source Voltage, VGS -- V
2
C
5°
-2
=-
10
Tc
7
5
°C
75
3
2
1.0
7
5
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
5
tf
7
tr
5
20
10
0
--25
25
50
75
100
125
td(on)
3
150
IT14607
IS -- VSD
VGS=0V
Single pulse
0
0.2
0.4
0.6
0.8
1.0
1.2
IT14609
Ciss, Coss, Crss -- VDS
f=1MHz
5
2
100
=
V GS
30
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- pF
3
5.0
IT14605
7
td(off)
4.5
=2
, ID
10V
10000
VDD=60V
VGS=10V
7
4.0
0A
40
IT14608
SW Time -- ID
1000
3.5
50
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
5 7 100
Drain Current, ID -- A
3.0
60
Source Current, IS -- A
°C
25
2.5
Case Temperature, Tc -- °C
VDS=10V
3
2.0
Single pulse
0
--50
10
100
7
5
1.5
RDS(on) -- Tc
IT14606
| yfs | -- ID
2
1.0
Cutoff Voltage, VGS(off) -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
50
40
0.5
70
ID=20A
Single pulse
60
0
IT14604
RDS(on) -- VGS
70
0
3.0
25°C
1.0
5°C
0.5
Tc=
7
0
Drain-to-Source Voltage, VDS -- V
Forward Transfer Admittance, | yfs | -- S
20
10
10
Switching Time, SW Time -- ns
30
5°C
VGS=4.0V
40
C
30
50
--25
°
40
60
Tc=
7
.0
V
Drain Current, ID -- A
4.5V
25
°C
6.0
10
Drain Current, ID -- A
8
60
0
5°C
75 ° C
25°C
70
.0V
50
Tc= -2
VDS=10V
70
0
ID -- VGS(off)
80
Tc=25°C
--25°
C
80
Ciss
3
2
1000
7
5
Coss
3
2
Crss
2
10
0.1
2
3
5
7 1.0
2
3
5
7 10
Drain Current, ID -- A
2
3
5
7
IT14610
100
7
0
5
10
15
20
25
Drain-to-Source Voltage, VDS -- V
30
IT14611
No. A1458-3/7
ATP405
VGS -- Qg
10
VDS=60V
ID=40A
7
6
5
3
1
0
0
10
20
30
40
50
60
Total Gate Charge, Qg -- nC
PD -- Tc
80
60
50
40
30
20
10
0
20
40
60
80
100
0m
10
7
5
3
2
s
1.0
7
5
3
2
Operation in
this area is
limited by RDS(on).
2 3
120
Case Temperature, Tc -- °C
140
160
IT14602
5 7 1.0
2 3
5 7 10
2 3
Drain-to-Source Voltage, VDS -- V
EAS -- Ta
120
70
0
ms
10
IT14612
Avalanche Energy derating factor -- %
Allowable Power Dissipation, PD -- W
80
70
ID=40A
0.1
7
5
3 Tc=25°C
2
Single pulse
0.01
0.01 2 3 5 7 0.1
2
10
μs
0μ
s
10
10
n
tio
era
op
4
PW≤10μs
s
1m
Drain Current, ID -- A
8
IDP=160A
100
7
5
3
2
DC
Gate-to-Source Voltage, VGS -- V
9
ASO
5
3
2
5 7100 2
IT14613
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT14603
No. A1458-4/7
ATP405
Taping Specification
ATP405-TL-H
No. A1458-5/7
ATP405
Outline Drawing
ATP405-TL-H
Land Pattern Example
Mass (g) Unit
0.266 mm
* For reference
Unit: mm
6.7
6.5
1.6
2
1.5
2.3
2.3
No. A1458-6/7
ATP405
Note on usage : Since the ATP405 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
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different from current conditions on the usage of automotive device, communication device, office equipment,
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prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
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This catalog provides information as of June, 2012. Specifications and information herein are subject
to change without notice.
PS No. A1458-7/7
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