ZSELEC EGF1A 1.0a surface mount glass passivated ultrafast diode Datasheet

Z ibo Seno Electronic Engineering Co., Ltd.
EGF1A – EGF1M
1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE
Features
!
!
!
!
!
!
B
Ideally Suited for Automatic Assembly
Low Forward Voltage Drop, High Efficiency
Surge Overload Rating to 30A Peak
Low Power Loss
A
Ultra-Fast Recovery Time
F
Plastic Case Material has UL Flammability
Classification Rating 94V-O
C
H
G
E
SMA/DO-214AC
Dim
Min
Max
2.50
2.90
A
4.00
4.60
B
1.20
1.60
C
0.152
0.305
D
4.80
5.28
E
2.00
2.44
F
0.051
0.203
G
0.76
1.52
H
All Dimensions in mm
Mechanical Data
!
!
!
!
!
!
Case: SMA/DO-214AC, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.064 grams (approx.)
Lead Free: For RoHS / Lead Free Version
Maximum Ratings and Electrical Characteristics
Symbol
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@TA=25°C unless otherwise specified
EGF1A EGF1B EGF1D EGF1G EGF1J EGF1K EGF1M
Unit
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
VR(RMS)
35
70
140
280
420
560
800
V
IO
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
30
A
Forward Voltage
@IF = 1.0A
VFM
@TA = 25°C
@TA = 100°C
IRM
Peak Reverse Current
At Rated DC Blocking Voltage
@TL = 100°C
D
1.0
1.4
1.7
V
10
500
µA
Reverse Recovery Time (Note 1)
trr
Typical Junction Capacitance (Note 2)
Cj
15
pF
RJL
30
°C/W
Tj, TSTG
-65 to +175
°C
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
50
75
nS
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
EGF1A – EGF1M
1 of 2
www.senocn.com
Alldatasheet
Z ibo Seno Electronic Engineering Co., Ltd.
1.0
0.5
0
75
50
100
125
175
150
IF, INSTANTANEOUS FORWARD CURRENT (A)
I(AV), AVERAGE FORWARD CURRENT (A)
EGF1A – EGF1M
10
EGF1A – EGF1D
EGF1G
1.0
EGF1J – EGF1M
0.1
0.01
IR, INSTANTANEOUS REVERSE CURRENT (mA)
IFSM, PEAK FORWARD SURGE CURRENT (A)
40
Single Half Sine-Wave
(JEDEC Method)
30
20
10
Tj = 150°C
1
10
0
0.4
0.8
1.2
1.6
2.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
TL , LEAD TEMPERATURE
( ° C)
Fig. 1 Forward Current Derating Curve
0
Tj - 25°C
Pulse Width = 300µs
100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Forward Surge Current Derating Curve
1000
100
Tj = 100°C
10
1.0
Tj = 25°C
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
trr
50Ω NI (Non-inductive)
(-)
10Ω NI
Device
Under
Test
(+)
+0.5A
(-)
Pulse
Generator
(Note 2)
50V DC
Approx
1.0Ω
NI
Oscilloscope
(Note 1)
0A
-0.25A
(+)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
EGF1A – EGF1M
2 of 2
www.senocn.com
Alldatasheet
Similar pages