DMS2220LFDB P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR® SUPER BARRIER RECTIFIER Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • Low On-Resistance • 95mΩ @VGS = -4.5V • 120mΩ @VGS = -2.5V • 86mΩ (typ) @VGS = -1.8V Low Gate Threshold Voltage, -1.3V Max Fast Switching Speed Low Input/Output Leakage ® Incorporates Low VF Super Barrier Rectifier (SBR ) Low Profile, 0.5mm Max Height Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: DFN2020B-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 6 Ordering Information: See Page 6 Weight: 0.0065 grams (approximate) • • • • • • DFN2020B-6 D NC A 3 2 1 Q1 A NC D1 K Maximum Ratings – TOTAL DEVICE 5 6 G K Symbol PD RθJA TJ, TSTG Maximum Ratings – P-CHANNEL MOSFET – Q1 Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 4) S BOTTOM VIEW Pin Configuration Value 1.4 89 -55 to +150 Unit W °C/W °C Value -20 ±12 -3.5 -12 Units V V A A Symbol VRRM VRWM VR Value Unit 35 V VR(RMS) 25 V IO 1 A IFSM 3 A @TA = 25°C unless otherwise specified Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load 1. 2. 3. 4. G @TA = 25°C unless otherwise specified Symbol VDSS VGSS ID IDM Characteristic Notes: D @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Maximum Ratings – SBR® – D1 K 4 S TOP VIEW Internal Schematic BOTTOM VIEW D Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout. No purposefully added lead. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Repetitive rating, pulse width limited by junction temperature. SBR is a registered trademark of Diodes Incorporated. DMS2220LFDB Document number: DS31546 Rev. 7 - 2 1 of 7 www.diodes.com July 2009 © Diodes Incorporated DMS2220LFDB Electrical Characteristics – P-CHANNEL MOSFET – Q1 Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Symbol Min Typ Max Unit BVDSS IDSS -20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1 ±100 ±800 V μA IGSS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Electrical Characteristics – SBR® – D1 @TA = 25°C unless otherwise specified nA Test Condition VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±8V, VDS = 0V VGS = ±12V, VDS = 0V VGS(th) -0.45 ⎯ -1.3 V RDS (ON) ⎯ ⎯ ⎯ 60 74 86 95 120 ⎯ mΩ VDS = VGS, ID = -250μA VGS = -4.5V, ID = -2.8A VGS = -2.5V, ID = -2.0A |Yfs| VSD ⎯ ⎯ 8 0.7 ⎯ -1.2 S V VGS = -1.8V, ID = -1.0A VDS = -5V, ID = -2.8A VGS = 0V, IS = -1.6A Ciss Coss Crss ⎯ ⎯ ⎯ 632 65 54 ⎯ ⎯ ⎯ pF pF pF VDS = -10V, VGS = 0V f = 1.0MHz @ TA = 25ºC unless otherwise specified Characteristic Reverse Breakdown Voltage (Note 5) Symbol V(BR)R Min 35 Typ 40 Max ⎯ Unit V Forward Voltage VF ⎯ ⎯ 354 415 0.42 0.49 V IF = 0.5A IF = 1.0A Reverse Current (Note 5) IR ⎯ ⎯ 100 μA VR = 20V Notes: Test Condition IR = 1mA 5. Short duration pulse test used to minimize self-heating effect. Q1, P-CHANNEL MOSFET 10 10 VGS = -8.0V VDS = -5V VGS = -4.5V 8 VGS = -2.5V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 8 VGS = -2.0V 6 VGS = -1.5V 4 6 4 TA = 150°C 2 2 VGS = -1.0V 0 0 TA = 85°C TA = 25°C VGS = -1.2V 1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics TA = 125°C TA = -55°C 0 0.5 5 1 1.5 -VGS, GATE SOURCE VOLTAGE (V) 2 Fig. 2 Typical Transfer Characteristics SBR is a registered trademark of Diodes Incorporated. DMS2220LFDB Document number: DS31546 Rev. 7 - 2 2 of 7 www.diodes.com July 2009 © Diodes Incorporated DMS2220LFDB 0.14 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) Q1, P-CHANNEL MOSFET - Continued 0.12 0.1 0.08 VGS = -1.8V 0.06 VGS = -2.5V VGS = -4.5V 0.04 0.02 0 0 1 2 3 4 5 6 7 -ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.1 VGS = -2.5V ID = -2A VGS = -4.5V ID = -5A 1.0 0.8 TA = 150°C TA = 125°C 0.08 TA = 85°C 0.06 TA = 25°C 0.04 TA = -55°C 0.02 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.4 0.6 -50 1 2 3 4 5 6 7 -ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 8 0.11 0.09 VGS = -2.5V ID = -2A 0.07 VGS = -4.5V ID = -5A 0.05 0.03 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature 10,000 1 -VGS(TH), GATE THRESHOLD VOLTAGE (V) f = 1MHz C, CAPACITANCE (pF) 0.12 8 1.6 1.2 0.14 1,000 Ciss 100 Coss Crss 10 0 4 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 7 Typical Capacitance 20 0.9 0.8 0.7 0.6 ID = -1mA 0.5 ID = -250µA 0.4 0.3 0.2 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 8 Gate Threshold Variation vs. Ambient Temperature SBR is a registered trademark of Diodes Incorporated. DMS2220LFDB Document number: DS31546 Rev. 7 - 2 3 of 7 www.diodes.com July 2009 © Diodes Incorporated DMS2220LFDB Q1, P-CHANNEL MOSFET - Continued -IS, SOURCE CURRENT (A) 10 8 6 TA = 25°C 4 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Diode Forward Voltage vs. Current r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 146°C/W D = 0.02 0.01 P(pk) D = 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.005 0.001 0.00001 t1 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) 10 100 1,000 Fig. 10 Transient Thermal Response SBR is a registered trademark of Diodes Incorporated. DMS2220LFDB Document number: DS31546 Rev. 7 - 2 4 of 7 www.diodes.com July 2009 © Diodes Incorporated DMS2220LFDB D1, SBR® IF, INSTANTANEOUS FORWARD CURRENT (A) 0.7 PD, POWER DISSIPATION (W) 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 11 Forward Power Dissipation TA = 150°C 0.1 TA = 85°C 0.01 TA = 25°C 0.001 0.0001 0 TA = -55°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 12 Typical Forward Characteristics TA = 150°C 1,000 T A = 125°C C, CAPACITANCE (pF) 1,000 100 TA = 85°C 10 TA = 25°C 1 f = 1MHz 100 10 0.1 0.01 0 1 0.1 5 10 15 20 25 30 35 40 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 13 Typical Reverse Characteristics 1.6 1.4 1.2 Note 2 1.0 0.8 0.6 0.4 0.2 0 25 1 10 100 VR, DC REVERSE VOLTAGE (V) Fig. 14 Total Capacitance vs. Reverse Voltage 150 TA, DERATED AMBIENT TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (A) TA = 125°C 10,000 10,000 IR, INSTANTANEOUS REVERSE CURRENT(uA) 1 125 100 75 50 25 0 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 15 Forward Current Derating Curve 175 0 10 20 30 VR, DC REVERSE VOLTAGE (V) Fig. 16 Operating Temperature Derating 40 SBR is a registered trademark of Diodes Incorporated. DMS2220LFDB Document number: DS31546 Rev. 7 - 2 5 of 7 www.diodes.com July 2009 © Diodes Incorporated DMS2220LFDB Ordering Information (Note 6) Part Number DMS2220LFDB-7 Notes: Case DFN2020B-6 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM ME Date Code Key Year Code 2008 V Month Code 2009 W Jan 1 Feb 2 ME = Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) Dot denotes Pin 1 2010 X Mar 3 Apr 4 2011 Y May 5 Jun 6 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D Package Outline Dimensions A DFN2020B-6 Dim Min Max Typ A 0.545 0.605 0.575 A1 0 0.05 0.02 A3 0.13 ⎯ ⎯ b 0.20 0.30 0.25 D 1.95 2.075 2.00 d 0.45 ⎯ ⎯ D2 0.50 0.70 0.60 e 0.65 ⎯ ⎯ E 1.95 2.075 2.00 E2 0.90 1.10 1.00 f 0.15 ⎯ ⎯ L 0.25 0.35 0.30 z 0.225 ⎯ ⎯ All Dimensions in mm A3 SEATING PLANE A1 D Pin#1 ID D2 z d E E2 f f L e b Suggested Pad Layout C Y Dimensions Z G G1 X1 X2 Y Y1 C G X2 G1 X1 G Y1 Z Value (in mm) 1.67 0.20 0.40 1.0 0.45 0.37 0.70 0.65 SBR is a registered trademark of Diodes Incorporated. DMS2220LFDB Document number: DS31546 Rev. 7 - 2 6 of 7 www.diodes.com July 2009 © Diodes Incorporated DMS2220LFDB IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated www.diodes.com SBR is a registered trademark of Diodes Incorporated. DMS2220LFDB Document number: DS31546 Rev. 7 - 2 7 of 7 www.diodes.com July 2009 © Diodes Incorporated