BZT55-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Very sharp reverse characteristic • Low reverse current level • Very high stability • Low noise • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLICATIONS • Voltage stabilization PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT VZ range nom. 2.4 to 75 V Test current IZT 2.5 to 5 mA VZ specification Pulse current Int. construction Single ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY BZT55-series BZT55-series-GS18 10 000 per 13" reel 10 000/box BZT55-series BZT55-series-GS08 2500 per 7" reel 12 500/box PACKAGE PACKAGE NAME QuadroMELF SOD-80 WEIGHT 34 mg MOLDING COMPOUND MOISTURE SENSITIVITY FLAMMABILITY RATING LEVEL UL 94 V-0 MSL level 1 (according J-STD-020) SOLDERING CONDITIONS 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Power dissipation TEST CONDITION SYMBOL VALUE UNIT RthJA 300 K/W Ptot 500 mW IZ PV/VZ mA RthJA 500 K/W Tj 175 °C Tstg - 65 to + 175 °C VF 1.5 V Zener current Junction to ambient air On PC board 50 mm x 50 mm x 1.6 mm Junction temperature Storage temperature range Forward voltage (max.) Rev. 1.7, 22-Nov-11 IF = 200 mA Document Number: 85637 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZT55-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE (1) VZ at IZT1 PART NUMBER TEST CURRENT IZT1 V IZT2 REVERSE LEAKAGE CURRENT DYNAMIC RESISTANCE IR at VR ZZ at IZT1 ZZK at IZT2 Tamb = 150 °C f = 1 kHz Tamb = 25 °C mA μA TEMPERATURE COEFFICIENT TKVZ V %/K MIN. NOM. MAX. MAX. MAX. MIN. BZT55C2V4 2.28 2.4 2.56 5 1 < 50 MAX. BZT55C2V7 2.5 2.7 2.9 5 1 BZT55C3V0 2.8 3.0 3.2 5 1 BZT55C3V3 3.1 3.3 3.5 5 BZT55C3V6 3.4 3.6 3.8 5 BZT55C3V9 3.7 3.9 4.1 5 1 <2 < 40 1 < 90 < 600 - 0.08 - 0.05 BZT55C4V3 4 4.3 4.6 5 1 <1 < 20 1 < 90 < 600 - 0.06 - 0.03 BZT55C4V7 4.4 4.7 5 5 1 < 0.5 < 10 1 < 80 < 600 - 0.05 0.02 BZT55C5V1 4.8 5.1 5.4 5 1 < 0.1 <2 1 < 60 < 550 - 0.02 0.02 BZT55C5V6 5.2 5.6 6 5 1 < 0.1 <2 1 < 40 < 450 - 0.05 0.05 BZT55C6V2 5.8 6.2 6.6 5 1 < 0.1 <2 2 < 10 < 200 0.03 0.06 BZT55C6V8 6.4 6.8 7.2 5 1 < 0.1 <2 3 <8 < 150 0.03 0.07 BZT55C7V5 7 7.5 7.9 5 1 < 0.1 <2 5 <7 < 50 0.03 0.07 BZT55C8V2 7.7 8.2 8.7 5 1 < 0.1 <2 6.2 <7 < 50 0.03 0.08 BZT55C9V1 8.5 9.1 9.6 5 1 < 0.1 <2 6.8 < 10 < 50 0.03 0.09 BZT55C10 9.4 10 10.6 5 1 < 0.1 <2 7.5 < 15 < 70 0.03 0.1 BZT55C11 10.4 11 11.6 5 1 < 0.1 <2 8.2 < 20 < 70 0.03 0.11 < 100 1 < 85 < 600 - 0.09 - 0.06 < 10 < 50 1 < 85 < 600 - 0.09 - 0.06 <4 < 40 1 < 90 < 600 - 0.08 - 0.05 1 <2 < 40 1 < 90 < 600 - 0.08 - 0.05 1 <2 < 40 1 < 90 < 600 - 0.08 - 0.05 BZT55C12 11.4 12 12.7 5 1 < 0.1 <2 9.1 < 20 < 90 0.03 0.11 BZT55C13 12.4 13 14.1 5 1 < 0.1 <2 10 < 26 < 110 0.03 0.11 BZT55C15 13.8 15 15.6 5 1 < 0.1 <2 11 < 30 < 110 0.03 0.11 BZT55C16 15.3 16 17.1 5 1 < 0.1 <2 12 < 40 < 170 0.03 0.11 BZT55C18 16.8 18 19.1 5 1 < 0.1 <2 13 < 50 < 170 0.03 0.11 BZT55C20 18.8 20 21.2 5 1 < 0.1 <2 15 < 55 < 220 0.03 0.11 BZT55C22 20.8 22 23.3 5 1 < 0.1 <2 16 < 55 < 220 0.04 0.12 BZT55C24 22.8 24 25.6 5 1 < 0.1 <2 18 < 80 < 220 0.04 0.12 BZT55C27 25.1 27 28.9 5 1 < 0.1 <2 20 < 80 < 220 0.04 0.12 BZT55C30 28 30 32 5 1 < 0.1 <2 22 < 80 < 220 0.04 0.12 BZT55C33 31 33 35 5 1 < 0.1 <2 24 < 80 < 220 0.04 0.12 BZT55C36 34 36 38 5 1 < 0.1 <2 27 < 80 < 220 0.04 0.12 BZT55C39 37 39 41 2.5 0.5 < 0.1 <5 30 < 90 < 500 0.04 0.12 BZT55C43 40 43 46 2.5 0.5 < 0.1 <5 33 < 90 < 600 0.04 0.12 BZT55C47 44 47 50 2.5 0.5 < 0.1 <5 36 < 110 < 700 0.04 0.12 BZT55C51 48 51 54 2.5 0.5 < 0.1 < 10 39 < 125 < 700 0.04 0.12 BZT55C56 52 56 60 2.5 0.5 < 0.1 < 10 43 < 135 < 1000 0.04 0.12 BZT55C62 58 62 66 2.5 0.5 < 0.1 < 10 47 < 150 < 1000 0.04 0.12 BZT55C68 64 68 72 2.5 0.5 < 0.1 < 10 51 < 200 < 1000 0.04 0.12 BZT55C75 70 75 79 2.5 0.5 < 0.1 < 10 56 < 250 < 1500 0.04 0.12 Notes • Additional measurement of voltage group 9V1 to 75 at 95 % Vzmin. 35 nA at Tj 25 °C (1) t 10 ms, T/t > 1000 p p Rev. 1.7, 22-Nov-11 Document Number: 85637 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZT55-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE (1) TEST CURRENT REVERSE LEAKAGE CURRENT IR at VR VZ at IZT1 PART NUMBER IZT1 V IZT2 Tamb = 25 °C mA ZZ at IZT1 Tamb = 150 °C μA DYNAMIC RESISTANCE NOM. MAX. BZT55B2V4 2.35 2.4 2.45 5 1 < 50 < 100 BZT55B2V7 2.64 2.7 2.76 5 1 < 10 BZT55B3V0 2.94 3.0 3.06 5 1 <4 BZT55B3V3 3.24 3.3 3.36 5 1 BZT55B3V6 3.52 3.6 3.68 5 BZT55B3V9 3.82 3.9 3.98 BZT55B4V3 4.22 4.3 4.38 BZT55B4V7 4.6 4.7 BZT55B5V1 5 BZT55B5V6 ZZK at IZT2 TKVZ f = 1 kHz V MIN. TEMPERATURE COEFFICIENT %/K MAX. MAX. MIN. MAX. 1 < 85 < 600 - 0.09 - 0.06 < 50 1 < 85 < 600 - 0.09 - 0.06 < 40 1 < 90 < 600 - 0.08 - 0.05 <2 < 40 1 < 90 < 600 - 0.08 - 0.05 1 <2 < 40 1 < 90 < 600 - 0.08 - 0.05 5 1 <2 < 40 1 < 90 < 600 - 0.08 - 0.05 5 1 <1 < 20 1 < 90 < 600 - 0.06 - 0.03 4.8 5 1 < 0.5 < 10 1 < 80 < 600 - 0.05 0.02 5.1 5.2 5 1 < 0.1 <2 1 < 60 < 550 - 0.02 0.02 5.48 5.6 5.72 5 1 < 0.1 <2 1 < 40 < 450 - 0.05 0.05 BZT55B6V2 6.08 6.2 6.32 5 1 < 0.1 <2 2 < 10 < 200 0.03 0.06 BZT55B6V8 6.66 6.8 6.94 5 1 < 0.1 <2 3 <8 < 150 0.03 0.07 BZT55B7V5 7.35 7.5 7.65 5 1 < 0.1 <2 5 <7 < 50 0.03 0.07 BZT55B8V2 8.04 8.2 8.36 5 1 < 0.1 <2 6.2 <7 < 50 0.03 0.08 BZT55B9V1 8.92 9.1 9.28 5 1 < 0.1 <2 6.8 < 10 < 50 0.03 0.09 BZT55B10 9.8 10 10.2 5 1 < 0.1 <2 7.5 < 15 < 70 0.03 0.1 BZT55B11 10.78 11 11.22 5 1 < 0.1 <2 8.2 < 20 < 70 0.03 0.11 BZT55B12 11.76 12 12.24 5 1 < 0.1 <2 9.1 < 20 < 90 0.03 0.11 BZT55B13 12.74 13 13.26 5 1 < 0.1 <2 10 < 26 < 110 0.03 0.11 BZT55B15 14.7 15 15.3 5 1 < 0.1 <2 11 < 30 < 110 0.03 0.11 BZT55B16 15.7 16 16.3 5 1 < 0.1 <2 12 < 40 < 170 0.03 0.11 BZT55B18 17.64 18 18.36 5 1 < 0.1 <2 13 < 50 < 170 0.03 0.11 BZT55B20 19.6 20 20.4 5 1 < 0.1 <2 15 < 55 < 220 0.03 0.11 BZT55B22 21.55 22 22.45 5 1 < 0.1 <2 16 < 55 < 220 0.04 0.12 BZT55B24 23.5 24 24.5 5 1 < 0.1 <2 18 < 80 < 220 0.04 0.12 BZT55B27 26.4 27 27.6 5 1 < 0.1 <2 20 < 80 < 220 0.04 0.12 BZT55B30 29.4 30 30.6 5 1 < 0.1 <2 22 < 80 < 220 0.04 0.12 BZT55B33 32.4 33 33.6 5 1 < 0.1 <2 24 < 80 < 220 0.04 0.12 BZT55B36 35.3 36 36.7 5 1 < 0.1 <2 27 < 80 < 220 0.04 0.12 BZT55B39 38.2 39 39.8 2.5 1 < 0.1 <5 30 < 90 < 500 0.04 0.12 BZT55B43 42.1 43 43.9 2.5 0.5 < 0.1 <5 33 < 90 < 600 0.04 0.12 BZT55B47 46.1 47 47.9 2.5 0.5 < 0.1 <5 36 < 110 < 700 0.04 0.12 BZT55B51 50 51 52 2.5 0.5 < 0.1 < 10 39 < 125 < 700 0.04 0.12 BZT55B56 54.9 56 57.1 2.5 0.5 < 0.1 < 10 43 < 135 < 1000 0.04 0.12 BZT55B62 60.8 62 63.2 2.5 0.5 < 0.1 < 10 47 < 150 < 1000 0.04 0.12 BZT55B68 66.6 68 69.4 2.5 0.5 < 0.1 < 10 51 < 200 < 1000 0.04 0.12 BZT55B75 73.5 75 76.5 2.5 0.5 < 0.1 < 10 56 < 250 < 1500 0.04 0.12 Notes • Additional measurement of voltage group 9V1 to 75 at 95 % Vzmin. 35 nA at Tj 25 °C (1) t 10 ms, T/t > 1000 p p Rev. 1.7, 22-Nov-11 Document Number: 85637 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZT55-Series www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 15 TKVZ - Temperature Coefficient of VZ (10-4/K) Ptot - Total Power Dissipation (mW) 600 500 400 300 200 100 0 95 9602 Fig. 1 - Total Power Dissipation vs. Ambient Temperature IZ = 5 mA 0 0 10 20 30 40 50 VZ - Z-Voltage (V) 95 9600 Fig. 4 - Temperature Coefficient of VZ vs. Z-Voltage 1000 200 CD - Diode Capacitance (pF) VZ - Voltage Change (mV) 5 -5 80 120 160 200 40 Tamb - Ambient Temperature (°C) 0 Tj = 25 °C 100 IZ = 5 mA 10 150 VR = 2 V Tj = 25 °C 100 50 0 1 0 5 10 15 25 20 VZ - Z-Voltage (V) 95 9598 0 5 10 15 20 25 VZ - Z-Voltage (V) 95 9601 Fig. 2 - Typical Change of Working Voltage under Operating Conditions at Tamb=25°C Fig. 5 - Diode Capacitance vs. Z-Voltage 1.3 100 VZtn = VZt/VZ (25 °C) 1.2 TKVZ = 10 x 10-4/K 8 x 10-4/K 6 x 10-4/K 1.1 -4 4 x 10 /K 2 x 10-4/K 0 1.0 - 2 x 10-4/K - 4 x 10-4/K 0.9 IF - Forward Current (mA) VZtn - Relative Voltage Change 10 10 Tj = 25 °C 1 0.1 0.01 0.001 0.8 - 60 95 9599 0 60 120 180 Tj - Junction Temperature (°C) Fig. 3 - Typical Change of Working Voltage vs. Junction Temperature Rev. 1.7, 22-Nov-11 0 240 95 9605 0.2 0.4 0.6 0.8 1.0 VF - Forward Voltage (V) Fig. 6 - Forward Current vs. Forward Voltage Document Number: 85637 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZT55-Series www.vishay.com Vishay Semiconductors 1000 rZ - Differential Z-Resistance (Ω) 100 IZ - Z-Current (mA) 80 Ptot = 500 mW Tamb = 25 °C 60 40 20 IZ = 1 mA 100 5 mA 10 10 mA Tj = 25 °C 1 0 0 4 6 12 8 20 0 VZ - Z-Voltage (V) 95 9604 Fig. 7 - Z-Current vs. Z-Voltage 5 10 15 20 25 VZ - Z-Voltage (V) 95 9606 Fig. 9 - Differential Z-Resistance vs. Z-Voltage 50 Ptot = 500 mW Tamb = 25 °C IZ - Z-Current (mA) 40 30 20 10 0 15 20 25 30 35 VZ - Z-Voltage (V) 95 9607 Zthp - Thermal Resistance for Pulse Cond. (KW) Fig. 8 - Z-Current vs. Z-Voltage 1000 tp/T = 0.5 100 tp/T = 0.2 Single Pulse RthJA = 300 K/W T = Tjmax - Tamb 10 tp/T = 0.01 tp/T = 0.1 tp/T = 0.02 tp/T = 0.05 1 10-1 iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj) 100 101 tp - Pulse Length (ms) 102 95 9603 Fig. 10 - Thermal Response Rev. 1.7, 22-Nov-11 Document Number: 85637 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZT55-Series www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): QuadroMELF SOD-80 1.6 (0.063) 1.4 (0.055) 1. 7 (0 .0 gl as 67) s Cathode identification > R3 (R0.118) glass 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) The gap between plug and glass can be either on cathode or anode side Foot print recommendation: 2.5 (0.098) max. 2 (0.079) min. 1.25 (0.049) min. 5 (0.197) ref. 96 12071 Rev. 1.7, 22-Nov-11 Document Number: 85637 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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