AUTOMOTIVE GRADE
PD - 96318
AUIRF3805S-7P
AUIRF3805L-7P
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
V(BR)DSS
55V
RDS(on) typ.
G
max. 2.6mΩ
S
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
Description
ID
D
G
S
S
S
S
S
GS
D2Pak 7 Pin
SS
S
S
TO-263CA 7 Pin
AUIRF3805L-7P
AUIRF3805S-7P
Absolute Maximum Ratings
i
240A
D
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance
per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating.
These features combine to make this design an
extremely efficient and reliable device for use in
Automotive applications and a wide variety of other
applications.
2.0mΩ
G
D
S
Gate
Drain
Source
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the
device. These are stress ratings only; and functional operation of the device at these or any other condition
beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions
for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise
specified.
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (tested)
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
c
c
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
h
d
c
e
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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g
j
240
170
160
1000
300
2.0
± 20
440
680
See Fig.12a,12b,15,16
2.3
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300
10 lbf•in (1.1N•m)
Typ.
Max.
Units
–––
0.50
–––
–––
0.50
–––
62
40
°C/W
1
07/20/10
AUIRF3805S/L-7P
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
∆ΒVDSS/∆TJ
RDS(on) SMD
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
gfs
IDSS
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
55
–––
–––
2.0
110
–––
–––
–––
–––
–––
0.05
–––
–––
2.0
–––
–––
–––
–––
–––
–––
2.6
4.0
–––
20
250
200
-200
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 140A
V VDS = VGS, ID = 250µA
S VDS = 25V, ID = 140A
VDS = 55V, VGS = 0V
µA
VDS = 55V, VGS = 0V, TJ = 125°C
VGS = 20V
nA
VGS = -20V
e
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
–––
130
53
49
23
130
80
52
200
–––
–––
–––
–––
–––
–––
–––
4.5
–––
nC
ns
f
7.5
–––
–––
–––
–––
–––
–––
–––
7820
1260
610
4310
980
1540
–––
–––
–––
–––
–––
–––
e
e
nH
–––
Conditions
ID = 140A
VDS = 44V
VGS = 10V
VDD = 28V
ID = 140A
RG = 2.4Ω
VGS = 10V
Between lead,
pF
D
6mm (0.25in.)
from package
G
S
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
c
Min. Typ. Max. Units
–––
–––
240
–––
–––
1000
–––
–––
–––
–––
45
35
1.3
68
53
Conditions
MOSFET symbol
A
V
ns
nC
D
showing the
integral reverse
G
S
p-n junction diode.
TJ = 25°C, IS = 140A, VGS = 0V
TJ = 25°C, IF = 140A, VDD = 28V
di/dt = 100A/µs
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
This is applied to D 2Pak, when mounted on 1" square PCB
max. junction temperature. (See fig. 11).
( FR-4 or G-10 Material ). For recommended footprint and
This value determined from sample failure
soldering techniques refer to application note #AN-994.
population starting TJ = 25°C, L=0.043mH,
RG = 25Ω, IAS = 140A,VGS =10V.
Rθ is measured at TJ of approximately 90°C.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Solder mounted on IMS substrate.
Coss eff. is a fixed capacitance that gives the same Limited by TJmax starting TJ = 25°C, L=0.043mH,
charging time as Coss while VDS is rising from 0 to
RG = 25Ω, IAS = 140A,VGS =10V.Part not recommended for
80% VDSS.
use above this value.
2
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AUIRF3805S/L-7P
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device Model
RoHS Compliant
††
Comments:
This
part
number(s)
passed
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
7L-D2 PAK
MSL1 , 260°C
Class M4(+/-425V)
(per AEC-Q101-002)
Class H3A(+/-4000V)
(per AEC-Q101-001)
Class C5 (+/-1000V)
(per AEC-Q101-005)
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRF3805S/L-7P
10000
10000
1000
BOTTOM
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
1000
10
1
4.5V
BOTTOM
100
4.5V
10
≤60µs PULSE WIDTH
≤60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
0.1
0.1
1
10
1
100
1000
0.1
V DS, Drain-to-Source Voltage (V)
10
100
1000
Fig 2. Typical Output Characteristics
1000
250
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current (Α)
1
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
T J = 175°C
100
TJ = 25°C
10
VDS = 25V
≤60µs PULSE WIDTH
1.0
TJ = 25°C
200
150
T J = 175°C
100
50
V DS = 10V
380µs PULSE WIDTH
0
2
4
6
8
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
0
20
40
60
80
100
120
ID,Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
vs. Drain Current
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AUIRF3805S/L-7P
100000
12.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
ID= 140A
VGS, Gate-to-Source Voltage (V)
C rss = C gd
C, Capacitance(pF)
C oss = C ds + C gd
10000
Ciss
Coss
Crss
1000
100
8.0
6.0
4.0
2.0
0.0
1
10
100
0
VDS, Drain-to-Source Voltage (V)
T J = 175°C
100
T J = 25°C
10
1
ID, Drain-to-Source Current (A)
1000
100
150
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
10000
10000
50
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
ISD, Reverse Drain Current (A)
VDS= 64V
VDS= 40V
10.0
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100µsec
1msec
100
10msec
10
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.1
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRF3805S/L-7P
250
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
ID, Drain Current (A)
200
150
100
50
0
25
50
75
100
125
150
ID = 140A
VGS = 10V
2.0
1.5
1.0
0.5
175
-60 -40 -20 0 20 40 60 80 100120140160180
T C , Case Temperature (°C)
T J , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
Fig 9. Maximum Drain Current vs.
Case Temperature
1
Thermal Response ( Z thJC )
D = 0.50
0.20
0.1
0.10
0.05
τJ
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
R1
R1
τJ
τ1
τ1
R2
R2
τ2
τ2
Ci= τi/Ri
Ci i/Ri
R3
R3
τ3
τC
τ
τ3
Ri (°C/W)
0.0794
τi (sec)
0.000192
0.1474
0.2737
0.000628
0.014012
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRF3805S/L-7P
15V
VDS
D.U.T
RG
+
V
- DD
IAS
VGS
20V
A
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS , Single Pulse Avalanche Energy (mJ)
2000
DRIVER
L
ID
TOP
21A
37A
BOTTOM 140A
1500
1000
500
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
I AS
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
5.0
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
D.U.T.
+
V
- DS
VGS(th) Gate threshold Voltage (V)
VG
4.5
4.0
3.5
3.0
2.5
ID = 250µA
ID = 1.0mA
ID = 1.0A
2.0
1.5
-75 -50 -25
VGS
0
25
50
75 100 125 150 175 200
T J , Temperature ( °C )
3mA
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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Fig 14. Threshold Voltage vs. Temperature
7
AUIRF3805S/L-7P
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆ Tj = 150°C and
Tstart =25°C (Single Pulse)
100
0.01
0.05
0.10
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
500
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 140A
400
300
200
100
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
vs. Temperature
8
175
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT jmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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AUIRF3805S/L-7P
D.U.T
Driver Gate Drive
+
-
P.W.
+
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
V DD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
P.W.
Period
*
RG
D=
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
Period
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
*
ISD
VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V DS
V GS
RG
RD
D.U.T.
+
-V DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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9
AUIRF3805S/L-7P
D2Pak - 7 Pin Package Outline
Dimensions are shown in millimeters (inches)
D2Pak - 7 Pin Part Marking Information
Part Number
AUIRF3805S-7
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF3805S/L-7P
TO-263CA 7 Pin Long Leads Package Outline
Dimensions are shown in millimeters (inches)
TO-263CA - 7 Pin Part Marking Information
Part Number
AUIRF3805L-7
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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11
AUIRF3805S/L-7P
D2Pak - 7 Pin Tape and Reel
12
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AUIRF3805S/L-7P
Ordering Information
Base part
AUIRF3805L-7P
AUIRF3805S-7P
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Package Type
TO-262
D2Pak
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
50
50
800
800
AUIRF3805L-7P
AUIRF3805S-7P
AUIRF3805S-7PTRL
AUIRF3805S-7PTRR
13
AUIRF3805S/L-7P
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries
(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its
products and services at any time and to discontinue any product or services without notice. Part numbers
designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and
conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
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14
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