FAN73832 Half-Bridge Gate-Drive IC Features Description Floating Channel for Bootstrap Operation to +600V The FAN73832 is a half-bridge, gate-drive IC with shutdown and programmable dead-time control functions for driving MOSFETs and IGBTs, operating up to +600V. Typically 350mA/650mA Sourcing/Sinking Current Driving Capability for Both Channels Extended Allowable Negative VS Swing to -9.8V for Signal Propagation at VDD=VBS=15V High-Side Output in Phase of IN Input Signal Built-in UVLO Functions for Both Channels Built-in Common-Mode dv/dt Noise Canceling Circuit Internal 400nsec Minimum Dead-Time at RDT=20KΩ Programmable Turn-on Delay-Time Control (Dead-Time) Fairchild’s high-voltage process and common-mode noise canceling technique provide stable operation of high-side driver under high dv/dt noise circumstances. An advanced level-shift circuit allows high-side gate driver operation up to VS=-9.8V (typical) for VBS=15V. The UVLO circuits for both channels prevent malfunction when VDD and VBS are lower than the specified threshold voltage. Output drivers typically source/sink 350mA/650mA, respectively, which is suitable for all kinds of half- and full-bridge inverters. Applications SMPS Motor Drive Inverter Fluorescent Lamp Ballast HID Ballast 8 SOP 8-DIP Ordering Information Part Number FAN73832M(1) FAN73832MX(1) FAN73832N Package 8-SOP Pb-Free Operating Temperature Range Packing Method Tube Yes 8-DIP -40°C ~ 125°C Tape & Reel Tube Note: 1. These devices passed wave soldering test by JESD22A-111. © 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.0 www.fairchildsemi.com FAN73832 Half-Bridge Gate-Drive IC September 2006 FAN73832 Half-Bridge Gate-Drive IC Typical Application Diagrams VDC DBOOT VDD 1 IN PWM 2 GND VB 8 HO 7 VS 6 LO 5 CBOOT 3 PWM IC Shutdown Control DT/ SD 4 VDD RDT FAN73832 FAN73832 Rev:00 Figure 1. Application Circuit for Half-Bridge Switching Power Supply VDC VCC VDD VDD VB HO PHA VB HO IN VS VS PHB Forward IN FAN73832 SD M FAN73832 Reverse DC Motor Controller LO DT/ SD LO DT/ SD GND GND FAN73832 Rev:00 Figure 2. Application Circuit for Full-Bridge DC Motor Driver © 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.0 www.fairchildsemi.com 2 8 VB 7 HO 6 VS 4 VDD 5 LO 2 GND UVLO S Q HS(ON/ OFF) 1 3 R SCHMITT TRIGGER INPUT RDTINT DEAD - TIME CONTROL UVLO LS(ON/ OFF) DELAY DRIVER DT/SD R DRIVER PULSE GEN ERATOR IN NOISE CANCELLER FAN73832 Rev:00 Figure 3. Functional Block Diagram of FAN73832 © 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.0 www.fairchildsemi.com 3 FAN73832 Half-Bridge Gate-Drive IC Internal Block Diagram FAN73832 Half-Bridge Gate-Drive IC Pin Assignments 1 GND 2 DT/SD 3 VDD 4 FAN73832 IN 8 VB 7 HO 6 VS 5 LO FAN73832 Rev:00 Figure 4. Pin Configuration (Top View) Pin Definitions Pin # Name 1 IN Description 2 GND 3 DT/SD 4 VDD Low-Side Supply Voltage 5 LO Low-Side Driver Output 6 VS High-Side Floating Supply Return 7 HO High-Side Driver Output 8 VB High-Side Floating Supply Logic Input Ground Dead-Time Control with External Resistor and Shutdown Function © 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.0 www.fairchildsemi.com 4 The “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. The device should not be operated at these limits. The parametric values defined in the Electrical Characteristics tables are not guaranteed at the absolute maximum ratings. The “Recommended Operating Conditions” table defines the conditions for actual device operation. TA=25°C unless otherwise specified. Symbol Characteristics VS High-side offset voltage VB High-side floating supply voltage Min. Max. Unit VB-25 VB+0.3 V -0.3 625 V VS-0.3 VB+0.3 V VHO High-side floating output voltage HO VDD Low-side and logic-fixed supply voltage -0.3 25 V VLO Low-side output voltage LO -0.3 VDD+0.3 V VIN Logic input voltage (IN) -0.3 VDD+0.3 V Dead-time and shutdown control voltage -0.3 5.0 V VDD-25 VDD+0.3 V 50 V/nsec 8-SOP 0.625 W 8-DIP 1.25 VDT/SD GND dVS/dt PD(2)(3)(4) Logic ground Allowable offset voltage slew rate Power dissipation 8-SOP 200 8-DIP 100 °C/W θJA Thermal resistance, junction-to-ambient TJ Junction temperature 150 °C TSTG Storage temperature 150 °C Notes: 2. Mounted on 76.2 x 114.3 x 1.6mm PCB (FR-4 glass epoxy material). 3. Refer to the following standards: JESD51-2: Integral circuits thermal test method environmental conditions - Natural convection JESD51-3: Low effective thermal conductivity test board for leaded surface mount packages 4. Do not exceed PD under any circumstances. Recommended Operating Conditions Symbol Min. Max. Unit VB High-side floating supply voltage Parameter Condition VS+15 VS+20 V VS High-side floating supply offset voltage 6-VDD 600 V 15 20 V VDD Low-side supply voltage VHO High-side (HO) output voltage VS VB V VLO Low-side (LO) output voltage GND VDD V VIN Logic input voltage (IN) GND VDD V TA Ambient temperature -40 125 °C © 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.0 www.fairchildsemi.com 5 FAN73832 Half-Bridge Gate-Drive IC Absolute Maximum Ratings VBIAS (VDD, VBS)=15.0V, RDT=20KΩ,TA=25°C, unless otherwise specified. The VIN and IIN parameters are referenced to GND. The VO and IO parameters are referenced to GND and VS is applicable to HO and LO. Symbol Characteristics Test Condition Min. Typ. Max. Unit SUPPLY CURRENT SECTION IQBS Quiescent VBS supply current VIN=0V or 5V 35 90 IQDD Quiescent VDD supply current VIN=0V or 5V, RDT=20KΩ 300 450 ISD(4) Shutdown supply current DT/SD=GND 650 900 IPBS Operating VBS supply current fIN=20kHz, rms value 400 700 IPDD Operating VDD supply current fIN=20kHz, rms value 650 850 ILK Offset supply leakage current VB=VS=600V µA 10 POWER SUPPLY SECTION VDDUV+ VBSUV+ VDD and VBS supply under-voltage positive going threshold 10.7 11.6 12.5 V VDDUVVBSUV- VDD and VBS supply under-voltage negative going threshold 10.0 10.8 11.6 V VDDUVH VBSUVH VDD supply under-voltage lockout hysteresis 0.8 V 20 KΩ 3.0 V DEAD-TIME CONTROL SECTION RDTINT VDT Internal dead-time setting resistance Normal voltage at DT RDT=20KΩ GATE DRIVER OUTPUT SECTION VOH High-level output voltage, VBIAS-VO IO=20mA VOL Low-level output voltage, VO IO+ Output high short-circuit pulse current VO=0V, VIN=5V with PW<10µs 250 350 mA IO- Output low short-circuit pulsed current VO=15V, VIN=0V with PW<10µs 500 650 mA VS Allowable negative VS pin voltage for IN signal propagation to HO -9.8 1.0 V 0.6 V -7.0 V LOGIC INPUT SECTION (INPUT and SHUTDOWN) VIH Logic "1" input voltage VIL Logic "0" input voltage IIN+ Logic "1" input bias current VIN=5V VIN=0V IIN- Logic "0" input bias current SD+ Shutdown "1" input voltage SD- Shutdown "0" input voltage RPD Input pull-down resistance 2.9 V 50 2.9 1.2 V 100 µA 2.0 µA 1.2 V V 100 KΩ Note: 4. This parameter, although guaranteed, is not 100% tested in production. © 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.0 www.fairchildsemi.com 6 FAN73832 Half-Bridge Gate-Drive IC Electrical Characteristics VBIAS (VDD, VBS)=15.0V, VS=GND, CL=1000pF, RDT=20KΩ and TA = 25°C, unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. 730 tON Turn-on propagation delay VS=0V, RDT=20KΩ 580 tOFF Turn-off propagation delay VS=0V, RDT=20KΩ 180 230 tR Turn-on rise time CL=1000pF 50 100 tF Turn-off fall time CL=1000pF 30 80 100 180 tSD(5) DT1, DT2 DMT Shutdown propagation delay Dead-time LO OFF to HO ON & HO OFF to LO ON Dead-time matching RDT =20KΩ 300 400 500 RDT = 200KΩ 1.20 1.68 2.30 RDT = 20KΩ 0 60 RDT =200KΩ 0 150 Unit nsec Note: 5. This parameter, although guaranteed, is not 100% tested in production. © 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.0 www.fairchildsemi.com 7 FAN73832 Half-Bridge Gate-Drive IC Dynamic Electrical Characteristics 11.6 12.0 11.4 VDDUV- ,VBSUV- [V] VDDUV+ ,VBSUV+ [V] 11.8 11.6 11.4 11.2 11.0 10.8 10.6 10.4 11.0 10.2 10.8 -40 11.2 -20 0 20 40 60 80 100 10.0 -40 120 -20 0 Temperature [°C] 500 100 400 80 300 40 100 20 0 20 40 60 60 80 100 120 60 200 -20 40 Figure 6. VDD/VBS UVLO (-) vs. Temperature IQBS [μA] IQDD [μA] Figure 5. VDD/VDD UVLO (+) vs. Temperature 0 -40 20 Temperature [°C] 80 100 0 -40 120 -20 0 20 40 60 80 100 120 Temperature [°C] Temperature [°C] Figure 7. VDD Quiescent Current vs. Temperature Figure 8. VBS Quiescent Current vs. Temperature 1000 800 800 IPBS [μA] IPDD [μA] 600 600 400 400 200 200 0 -40 -20 0 20 40 60 80 100 0 -40 120 Temperature [°C] 0 20 40 60 80 100 120 Temperature [°C] Figure 9. VDD Operating Current vs. Temperature Figure 10. VBS Operating Current vs. Temperature © 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.0 -20 www.fairchildsemi.com 8 FAN73832 Half-Bridge Gate-Drive IC Typical Characteristics 100 3.0 2.5 2.0 VIH [V] IIN+ [μA] 80 60 1.5 40 1.0 20 0 -40 0.5 -20 0 20 40 60 80 100 0.0 -40 120 -20 0 Temperature [°C] Figure 11. Logic Input Current vs. Temperature 2.5 2.5 SD+ BAR [V] 3.0 VIL [V] 2.0 1.5 0.5 0.5 20 40 60 80 100 120 1.5 1.0 0 60 2.0 1.0 -20 40 Figure 12. Logic Input High Voltage vs. Temperature 3.0 0.0 -40 20 Temperature [°C] 80 100 0.0 -40 120 -20 0 20 40 60 80 100 120 Temperature [°C] Temperature [°C] Figure 13. Logic Input Low Voltage vs. Temperature Figure 14. SD Positive Threshold vs. Temperature 3.0 800 2.5 tON [nsec] SD- BAR [V] 600 2.0 1.5 400 1.0 200 0.5 0.0 -40 -20 0 20 40 60 80 100 0 -40 120 Temperature [°C] 0 20 40 60 80 100 120 Temperature [°C] Figure 15. SD Negative Threshold vs. Temperature Figure 16. Turn-on Delay Time vs. Temperature © 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.0 -20 www.fairchildsemi.com 9 FAN73832 Half-Bridge Gate-Drive IC Typical Characteristics (Continued) 500 300 DT1, RDT= 20kΩ [nsec] tOFF [nsec] 250 200 150 100 450 400 350 50 0 -40 -20 0 20 40 60 80 100 300 -40 120 -20 0 Figure 17. Turn-off Delay Time vs. Temperature 60 80 100 120 2.0 2.2 1.6 Deadtime [μS] DT1, RDT= 200kΩ [nsec] 40 Figure 18. Dead Time (RDT=20kΩ) vs. Temperature 2.4 2.0 1.8 1.6 1.2 0.8 0.4 1.4 1.2 -40 20 Temperature [°C] Temperature [°C] -20 0 20 40 60 80 100 0.0 20 120 40 60 80 100 120 140 160 180 200 RDT [kohm] Temperature [°C] Figure 19. Dead Time (RDT=200kΩ) vs. Temperature Figure 20. RDT vs. Dead Time -6 VS [V] -8 -10 -12 -14 -40 -20 0 20 40 60 80 100 120 Temperature [°C] Figure 21. Allowable Negative VS Voltage for Signal Propagation to High Side vs. Temperature © 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.0 www.fairchildsemi.com 10 FAN73832 Half-Bridge Gate-Drive IC Typical Characteristics (Continued) +15V 10μF 100nF 10μF 100nF 1 IN 2 GND VB 8 HO 7 +15V HO 1nF Control SD 20K 3 DT/SD VS 6 VDD LO 5 4 LO FAN73832 1nF FAN73832 Rev:00 Figure 22. Switching Time Test Circuit IN HO LO DT/SD DT1 Shutdown DT2 DT2 Shutdown DT1 DT1 FAN73832 Rev.00 Figure 23. Input / Output Waveforms IN 50% 50% tOFF 90% tON LO 10% 90% HO tON tOFF 10% FAN73832 Rev.00 Figure 24. Switching Time Waveform Definitions © 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.0 www.fairchildsemi.com 11 FAN73832 Half-Bridge Gate-Drive IC Switching Time Definitions FAN73832 Half-Bridge Gate-Drive IC 50% DT/SD 90% HO or LO tSD FAN73832 Rev.00 Figure 25. Shutdown Waveform Definition 90% HO 10% DT2 DT1 90% LO MDT= |DT1 - DT2| 10% FAN73832 Rev.00 Figure 26. Dead-Time Control Waveform Definition © 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.0 www.fairchildsemi.com 12 1. Normal Operating Consideration 3. Layout Consideration The FAN73832 is a single PWM input, half-bridge, gatedrive IC with programmable dead-time and shutdown functions. For optimum performance of the high- and low-side gate drivers, considerations must be taken during printed circuit board (PCB) layout. The dead-time is set with a resistor (RDT) at the DT/SD pin. The wide dead-time programming range provides the flexibility to optimize drive signal timing for a selection of switching devices (MOSFET or IGBT) and applications. 3.1 Supply Capacitors If the output stages are able to quickly turn-on a switching device with a high value of current, the supply capacitors must be placed as close as possible to the device pins (VDD and GND for the ground-tied supply, VB and VS for the floating supply) to minimize parasitic inductance and resistance. The turn-on time delay circuitry (Dead-Time) accommodates resistor values from 20kΩ to 200kΩ with a dead-time proportional to the RDT resistance. 3.2 Gate Drive Loop If the DT/SD pin voltage decreases below 1.2V in the normal operation, the IC enters shutdown mode. Current loops behave like an antenna, able to receive and transmit noise. To reduce the noise coupling/emission and improve the power switch turn-on and off performances, gate drive loops must be reduced as much as possible. The external dead-time setting resistor (RDT) is at least above 20KΩ for normal operation in typical applications. 2. Under Voltage Lockout (UVLO) 3.3 Ground Plane The FAN73832 has an under-voltage lockout (UVLO) protection circuit for high- and low-side channels to prevent malfunction when VDD and VBS are lower than the specified threshold voltage. The UVLO circuitry monitors the supply voltage (VDD) and bootstrap capacitor voltage (VBS) indepently. Ground plane must not be placed under or nearby the high-voltage floating side to minimize noise coupling. © 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.0 www.fairchildsemi.com 13 FAN73832 Half-Bridge Gate-Drive IC Typical Application Information 8-SOP Dimensions are in millimeters (inches) unless otherwise noted.. MIN 0.1~0.25 0.004~0.001 #5 6.00 ±0.30 0.236 ±0.012 8° 0~ +0.10 0.15 -0.05 +0.004 0.006 -0.002 MAX0.10 MAX0.004 1.80 MAX 0.071 3.95 ±0.20 0.156 ±0.008 5.72 0.225 0.50 ±0.20 0.020 ±0.008 January 2001, Rev. A 8sop225_dim.pdf © 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.0 0.41 ±0.10 0.016 ±0.004 #4 1.27 0.050 #8 5.13 MAX 0.202 #1 4.92 ±0.20 0.194 ±0.008 ( 0.56 ) 0.022 1.55 ±0.20 0.061 ±0.008 www.fairchildsemi.com 14 FAN73832 Half-Bridge Gate-Drive IC Mechanical Dimensions FAN73832 Half-Bridge Gate-Drive IC Mechanical Dimensions (Continued) 8-DIP #4 #5 1.524 ±0.10 0.060 ±0.004 0.46 ±0.10 #8 2.54 0.100 9.60 MAX 0.378 #1 9.20 ±0.20 0.362 ±0.008 ( 6.40 ±0.20 0.252 ±0.008 0.018 ±0.004 0.79 ) 0.031 Dimensions are in millimeters (inches) unless otherwise noted.. 7.62 0.300 5.08 MAX 0.200 3.40 ±0.20 0.134 ±0.008 3.30 ±0.30 0.130 ±0.012 0.33 0.013 MIN +0.10 0.25 –0.05 +0.004 0~15° 0.010 –0.002 September 1999, Rev B pdip8_dim.pdf © 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.0 www.fairchildsemi.com 15 ACEx¥ ActiveArray¥ Bottomless¥ Build it Now¥ CoolFET¥ CROSSVOLT¥ DOME¥ EcoSPARK¥ 2 E CMOS¥ EnSigna¥ FACT¥ FACT Quiet Series¥ ® FAST FASTr¥ FPS¥ FRFET¥ GlobalOptoisolator¥ GTO¥ HiSeC¥ 2 I C¥ i-Lo¥ ImpliedDisconnect¥ IntelliMAX¥ ISOPLANAR¥ LittleFET¥ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MICROWIRE¥ MSX¥ MSXPro¥ OCX¥ OCXPro¥ ® OPTOLOGIC OPTOPLANAR¥ PACMAN¥ POP¥ Power247¥ PowerEdge¥ PowerSaver¥ ® PowerTrench ® QFET QS¥ QT Optoelectronics¥ Quiet Series¥ RapidConfigure¥ RapidConnect¥ ScalarPump¥ PSerDes¥ ® SILENT SWITCHER SMART START¥ SPM¥ Stealth¥ SuperFET¥ SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SyncFET¥ TCM¥ TinyBoost¥ TinyBuck¥ ® TinyLogic TINYOPTO¥ TinyPower¥ TinyPWM¥ TruTranslation¥ UHC¥ ® UltraFET UniFET¥ VCX¥ Wire¥ Across the board. Around the world.¥ Programmable Active Droop¥ ® The Power Franchise DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Definition Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I20 © 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.0 www.fairchildsemi.com 16 FAN73832 Half-Bridge Gate-Drive IC TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.