MJB41C (NPN), MJB42C (PNP) Preferred Devices Complementary Silicon Plastic Power Transistors D2PAK for Surface Mount http://onsemi.com Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Electrically the Same as TIP41 and T1P42 Series • Pb−Free Packages are Available ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ COMPLEMENTARY SILICON POWER TRANSISTORS 6 AMPERES, 100 VOLTS, 65 WATTS MARKING DIAGRAM MAXIMUM RATINGS Rating Symbol Value Unit VCEO 100 Vdc Collector−Base Voltage VCB 100 Vdc Emitter−Base Voltage VEB 5.0 Vdc IC 6.0 10 Adc Base Current IB 2.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD Total Power Dissipation @ TA = 25_C Derate above 25_C PD Collector−Emitter Voltage Collector Current − Continuous − Peak Unclamped Inductive Load Energy (Note 1) Operating and Storage Junction Temperature Range 65 0.52 W W/_C 2.0 0.016 W W/_C E 62.5 mJ TJ, Tstg −65 to +150 _C D2PAK CASE 418B STYLE 1 J4xC A Y WW G Package Shipping † MJB41C D2PAK 50 Units/Rail MJB41CG D2PAK 50 Units/Rail Device Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.92 _C/W MJB41CT4 Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W MJB41CT4G Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 50 _C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds TL _C 260 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W 2. When surface mounted to an FR−4 board using the minimum recommended pad size. = Specific Device Code x = 1 or 2 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION THERMAL CHARACTERISTICS Characteristic J4xCG AYWW (Pb−Free) D2PAK 800/Tape & Reel D2PAK (Pb−Free) 800/Tape & Reel MJB42C D2PAK 50 Units/Rail MJB42CG D2PAK 50 Units/Rail (Pb−Free) MJB42CT4 D2PAK 800/Tape & Reel MJB42CT4G D2PAK 800/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 December, 2005 − Rev. 1 1 Publication Order Number: MJB41C/D MJB41C (NPN), ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 100 − Vdc Collector Cutoff Current (VCE = 60 Vdc, IB = 0) ICEO − 0.7 mAdc Collector Cutoff Current (VCE = 100 Vdc, VEB = 0) ICES − 100 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 50 mAdc hFE 30 15 − 75 − Collector−Emitter Saturation Voltage (IC = 6.0 Adc, IB = 600 mAdc) VCE(sat) − 1.5 Vdc Base−Emitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc) VBE(on) − 2.0 Vdc Current−Gain − Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 − MHz Small−Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 − − OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 3) (IC = 30 mAdc, IB = 0) ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) DYNAMIC CHARACTERISTICS PD, POWER DISSIPATION (WATTS) 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. TA 4.0 TC 80 3.0 60 2.0 40 1.0 20 0 0 TC TA 0 20 40 60 100 80 T, TEMPERATURE (°C) 120 140 160 Figure 1. Power Derating VCC +30 V 2.0 RC 0.7 0.5 SCOPE +11 V −9.0 V tr, tf ≤ 10 ns DUTY CYCLE = 1.0% t, TIME (s) μ RB 0 TJ = 25°C VCC = 30 V IC/IB = 10 1.0 25 ms D1 0.3 0.2 tr 0.1 0.07 0.05 −4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS 0.03 0.02 0.06 D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA Figure 2. Switching Time Test Circuit td @ VBE(off) ≈ 5.0 V 0.1 0.2 0.4 0.6 1.0 2.0 IC, COLLECTOR CURRENT (AMP) Figure 3. Turn−On Time http://onsemi.com 2 4.0 6.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJB41C (NPN), 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.02 0.03 0.02 0.01 SINGLE PULSE 0.01 0.01 0.02 0.05 1.0 P(pk) ZqJC(t) = r(t) RqJC RqJC = 1.92°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) ZqJC(t) 0.05 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 500 1.0 k Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMP) 10 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0.5ms 5.0 1.0ms 3.0 2.0 1.0 0.5 0.3 0.2 SECONDARY BREAKDOWN LTD BONDING WIRE LTD THERMAL LIMITATION @ TC = 25°C (SINGLE PULSE) CURVES APPLY BELOW RATED VCEO 0.1 5.0 5.0ms 40 10 20 60 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 80 100 Figure 5. Active−Region Safe Operating Area 5.0 300 ts t, TIME (s) μ 1.0 TJ = 25°C TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = IB2 200 C, CAPACITANCE (pF) 3.0 2.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.06 tf Cib 100 70 Cob 50 0.1 0.2 0.4 0.6 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 4.0 30 0.5 6.0 Figure 6. Turn−Off Time 1.0 2.0 3.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 3 30 50 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) MJB41C (NPN), hFE , DC CURRENT GAIN 500 300 200 VCE = 2.0 V TJ = 150°C 100 70 50 25°C 30 20 10 7.0 5.0 0.06 −55 °C 0.1 0.2 0.3 0.4 0.6 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 4.0 6.0 2.0 TJ = 25°C 1.6 1.2 IC = 1.0 A 0.4 0 10 θV, TEMPERATURE COEFFICIENTS (mV/°C) V, VOLTAGE (VOLTS) 1.6 1.2 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 4.0 V 0.4 VCE(sat) @ IC/IB = 10 0.2 0.3 0.4 IC, COLLECTOR CURRENT (A) μ 50 100 200 300 IB, BASE CURRENT (mA) 500 0.6 1.0 2.0 3.0 4.0 6.0 +2.0 1000 *APPLIES FOR IC/IB ≤ hFE/4 +1.5 +1.0 +0.5 +25 °C to +150°C * qVC FOR VCE(sat) 0 −55 °C to +25°C −0.5 +25 °C to +150°C −1.0 −1.5 qVB FOR VBE −55 °C to +25°C −2.0 −2.5 0.06 0.1 0.2 0.3 0.5 2.0 3.0 4.0 IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages Figure 11. Temperature Coefficients VCE = 30 V TJ = 150°C 100°C VCE = 30 V 100 IC = ICES 10−1 REVERSE FORWARD 0 +0.1 +0.2 +0.3 IC = 10 x ICES IC ≈ ICES 100k 25°C +0.4 +0.5 +0.6 +0.7 6.0 10M 1.0M 10−3 −0.3 −0.2 −0.1 1.0 IC, COLLECTOR CURRENT (AMP) R BE , EXTERNAL BASE−EMITTER RESISTANCE (OHMS) 0.1 103 10−2 30 +2.5 TJ = 25°C 101 20 Figure 9. Collector Saturation Region 2.0 102 5.0 A 0.8 Figure 8. DC Current Gain 0 0.06 2.5 A 10k IC = 2 x ICES 1.0k 0.1k (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 20 40 60 80 100 120 140 160 VBE, BASE−EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 12. Collector Cut−Off Region Figure 13. Effects of Base−Emitter Resistance http://onsemi.com 4 MJB41C (NPN), PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E V W −B− 4 DIM A B C D E F G H J K L M N P R S V A 1 2 S 3 −T− SEATING PLANE K W J G H D 3 PL 0.13 (0.005) M T B M STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR VARIABLE CONFIGURATION ZONE N R P U L M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 L M L M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 8.38 0.33 1.016 0.04 10.66 0.42 5.08 0.20 3.05 0.12 17.02 0.67 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 MJB41C (NPN), ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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