AKM EW-6672 Ew-6672 is composed of a ultra-high sensitive insb hall element and a signal processing ic chip in a package Datasheet

Hybrid Hall Effect ICs
EW-series
EW-6672
Shipped in packet-tape reel(3000pcs/Reel)
EW-6672 is composed of a Ultra-high sensitive InSb Hall element and a signal processing IC chip in a package.
Unipolar Hall
Supply Voltage
Effect Switch
2.4〜3.3V
Hall Element
Pulse
Excitation
Ultra High Sensitivity
Output
Bop:1.5mT
CMOS
SMT
●Operational Characteristics
Vout
S
VOH
H
Marking
1:VDD
Bh
2:VSS
3
1
3:OUT
N
L
VOL
N-pole 0
Brp
Bop
S-pole
●Functional Block Diagram
Magnetic flux density
1:VDD
Switch
Item
Symbol
Supply Voltage VDD
Output
Current Iout
Operating Temperature Range Topr
Storage Temperature Range Tstg
Limit
Unit
−0.1 〜 5.0
V
±1
mA
−30 〜 85
℃
−40 〜 125
Dynamic
Offset Cancellator
●Absolute Maximum Ratings(Ta=25℃)
2:VSS
Pulse
Hall
Chopper Amplifier
Regulator Element Stabilizer
℃
●Magnetic q and Electrical Characteristics(Ta=25℃ VDD=3V)
Item
Symbol
Conditions
Min.
Typ. Max. Unit
Supply Voltage VDD
2.4
3.0
3.3
V
Operating Point BOP
1.0*
1.5
2.3
Release Point
Brp
0.8
1.2
Hysteresis
Bh
0.1*
Period
Tp
Output High Voltage VOH
Io=−1.0mA
Output Low Voltage VOL
Io=+1.0mA
Supply Current IDD
Average
3:OUT
Schmitt
trigger
&Latch
●Magnetic Characteristics w(Ta=−30℃〜85℃ VDD=3V)
Symbol
Item
Conditions
Min.
Typ. Max. Unit
Operating Point BOP
0.9
1.5
2.9
mT
mT
Release Point
Brp
0.8
1.2
2.3
mT
1.9*
mT
Hysteresis
Bh
0.1
0.3
0.8
mT
0.3
0.6*
mT
50
100
ms
V
VDD −0.4
0.4
V
10
μA
Note) The above specifications are design targets.
●Application Circuit
GND
VSS
5
Bypass Capacitor
0.1μF
EM-6672
VDD
1[mT]=10[Gauss]
OUT
The characteristics with「*」marks are design targets.
VDD
67
Output
Stage
CMOS
EW-6672
•Please be aware that our products are not intended for use in life support equipment, devices, or systems. Use of our products in such applications requires the
advance written approval of our sales staff.
Certain applications using semiconductor devices may involve potential risks of personal injury, property damage, or loss of life. In order to minimize these risks,
adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. Inclusion of our products in such
applications is understood to be fully at the risk of the customer using our devices or systems.
a
●Package(Unit:mm)
●(For reference only)Land Pattern(Unit:mm)
0.95
1.00
2.60
0.0±0.05
5°
1.0±0.1
0.75
5°
0.70
1.00
0.95
0.70
3
0.3
1
0.3
5°
3.1±0.1
5°
0.48
φ0.3
Sensor Center
5°
0.3
0.70
0.11
5°
2.2±0.1
3.0±0.1
0.4
2
Pin Name Function
VDD Supply Voltage
VSS
GND
OUT Output Voltage
Pin No.
1
2
3
0.95
0.95
g
5°
5°
Note) The sensor center is located within the φ0.3mm circle.
●Supply Voltage
●IDD Pulse Driving(VDD=3V)
Supply Voltage[V]
3.4
50ms
IDD
12μs
3.2
i
IDD ON
(TYP : 3mA)
3
2.8
2.6
IDD
(TYP : 5μA)
2.4
IDD OFF
(TYP : 4μA)
time
2.2
−40
−20
0
20
40
60
80
100
Ambient Temperature[℃]
●Temparature Dependence of Bop. Brp
●Function Timing Chart
IDD
6
IDD
Operating Point[mT]
VDD=3V
5
4
B
3
Bop
2
B
t
o
Brp
Bop
1
0
−40
t
Vout
High
Brp
−20
0
20
40
60
Ambient Temperature[℃]
80
100
t
Vout
High
t
Low
Low
t
Operate Point Timing
t
Release Point Timing
68
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 These products and their specifications are subject to change without notice.
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inquiries the sales office of Asahi Kasei Microdevices Corporation (AKM) or
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information contained in this document are provided only to illustrate the
operation and application examples of the semiconductor products. You are
fully responsible for the incorporation of these external circuits, application
circuits, software and other related information in the design of your
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systemNote2), and AKM assumes no responsibility for such use, except for the
use approved with the express written consent by Representative Director of
AKM. As used here:
Note1) A critical component is one whose failure to function or perform
may reasonably be expected to result, whether directly or indirectly, in the
loss of the safety or effectiveness of the device or system containing it,
and which must therefore meet very high standards of performance and
reliability.
Note2) A hazard related device or system is one designed or intended for
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April 4, 2012
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