CEL NE681M13-T3-A Necs np silicon transistor Datasheet

NEC's NPN SILICON TRANSISTOR
OUTLINE DIMENSIONS (Units in mm)
FEATURES
•
•
PACKAGE OUTLINE M13
NEW MINIATURE M13 PACKAGE:
– Small transistor outline –
1.0 X 0.5 X 0.5 mm
– Low profile / 0.50 mm package height
– Flat lead style for better RF performance
HIGH GAIN BANDWIDTH PRODUCT:
fT = 7 GHz
+0.1
0.5 –0.05
+0.1
0.15 –0.05
0.3
1
2
0.35
XX
•
NE681M13
+0.1
1.0 –0.05
0.7
3
3
+0.1
0.2 –0.05
0.35
LOW NOISE FIGURE:
NF = 1.4 dB
2
1
+0.1
0.15 –0.05
0.1
0.1
0.2
0.2
DESCRIPTION
NEC's NE681M13 transistor is ideal for low noise, high gain,
and low cost amplifier applications. NEC's new low profile/
flat lead style "M13" package is ideal for today's portable
wireless applications. The NE681 is also available in chip,
Micro-x, and six different low cost plastic surface mount
package styles.
Bottom View
+0.1
0.125 –0.05
0.5±0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
NE681M13
2SC5615
M13
UNITS
MIN
GHz
4.5
fT
Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz
NF
Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz
dB
Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz
dB
|S21E|2
TYP
7
1.4
10
MAX
2.7
12
hFE2
Forward Current Gain at VCE = 3 V, IC = 7 mA
ICBO
Collector Cutoff Current at VCB = 10 V, IE = 0
µA
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
µA
0.8
CRE3
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz
pF
0.9
80
145
0.8
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
California Eastern Laboratories
NE681M13
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
PART NUMBER
RATINGS
VCBO
Collector to Base Voltage
V
20
NE681M13-A
VCEO
Collector to Emitter Voltage
V
10
NE681M13-T3-A
VEBO
Emitter to Base Voltage
V
1.5
Collector Current
mA
65
PT2
IC
Total Power Dissipation
mW
140
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
QUANTITY
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. With device mounted on 1.08 cm2 X 1.2 mm glass epoxy board.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
FORWARD CURRENT GAIN vs.
COLLECTOR CURRENT
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
65
500
DC Forward Current Gain, hFE
VCE = 8 V
Collector Current, IC (mA)
55
45
35
25
15
300
200
100
70
50
30
20
5
10
0
2
4
6
8
10
Collector to Emitter Voltage, VCE (V)
1
2
3
5
7
10
20
30
50
Collector Current, IC (mA)
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
2/09/2000
DATA SUBJECT TO CHANGE WITHOUT NOTICE
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
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standards, please do not hesitate to contact your local representative.
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See CEL Terms and Conditions for additional clarification of warranties and liability.
3-189
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