GE LL103A Schottky diode Datasheet

LL103A THRU LL103C
Schottky Diodes
FEATURES
MiniMELF
♦ For general purpose applications.
♦ The LL103A, B, C is a metal-on-silicon
Schottky barrier device which is protected by a PN junction guard ring.
.142 (3.6)
.134 (3.4)
♦ The low forward voltage drop and fast switch-
∅ .063 (1.6)
.055 (1.4)
Cathode Mark
ing make it ideal for protection of MOS devices,
steering, biasing and coupling diodes
for fast switching and low logic level applications.
Other applications are click suppression, efficient
full wave bridges in telephone subsets, and blocking
diodes in rechargeable low voltage battery systems.
.019 (0.48)
.011 (0.28)
♦ This diode is also available in DO-35 case with
the type designation SD103A, B, C, and in the
SOD-123 case with type designation
SD103AW, SD103BW, SD103CW.
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: MiniMELF Glass Case SOD-80C
Weight: approx. 0.05 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Value
Unit
VRRM
VRRM
VRRM
40
30
20
V
V
V
Power Dissipation (Infinite Heatsink)
TC = 3/8″ from Body
derates at 4 mW/°C to 0 at 125 °C
Ptot
4001)
mW
Junction Temperature
Tj
125
°C
Storage Temperature Range
TS
–55 to +150
°C
Single Cycle Surge
60-Hz Sine Wave
IFSM
15
A
Peak Inverse Voltage
1)
LL103A
LL103B
LL103C
Valid provided that electrodes are kept at ambient temperature.
4/98
LL103A THRU LL103C
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
IR
IR
IR
–
–
–
–
–
–
5
5
5
µA
µA
µA
VF
VF
–
–
–
–
0.37
0.6
V
V
Junction Capacitance
at VR = 0 V, f = 1 MHz
Ctot
–
50
–
pF
Reverse Recovery Time
at IF = IR = 50 mA to 200 mA, recover to 0.1 IR
trr
–
10
–
ns
Leakage Current
at VR = 30 V
at VR = 20 V
at VR = 10 V
LL103A
LL103B
LL103C
Forward Voltage Drop
at IF = 20 mA
at IF = 200 mA
RATINGS AND CHARACTERISTIC CURVES LL103A THRU LL103C
RATINGS AND CHARACTERISTIC CURVES LL103A THRU LL103C
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