APTGT75TDU60P Triple Dual Common Source Trench + Field Stop IGBT® Power Module G3 E1 G5 E5 E3 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 E1/E2 C2 C6 C3 C5 G1 G3 E1 E3 E3/E4 G5 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Very low (12mm) profile • Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C TJ = 150°C Max ratings 600 100 75 140 ±20 250 150A @ 550V Unit V A May, 2005 G1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C5 C3 V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGT75TDU60P – Rev 0, C1 VCES = 600V IC = 75A @ Tc = 80°C APTGT75TDU60P All ratings @ Tj = 25°C unless otherwise specified Test Conditions ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Characteristic VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 75A Tj = 150°C VGE = VCE , IC = 600µA VGE = 20V, VCE = 0V Test Conditions Cies Coes Cres Td(on) Tr Td(off) Tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Td(off) Tf Eon Eoff Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Reverse diode ratings and characteristics Symbol Characteristic VRRM Min 5.0 1.5 1.7 5.8 Min Typ Max Unit 250 1.9 µA 6.5 600 V nA Max Unit 4620 300 140 110 45 200 40 VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 75A R G = 12Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 75A R G = 12Ω Test Conditions Typ pF ns 120 50 250 60 1.3 2.6 Min Typ ns mJ Max 600 Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current VR=600V IF(A V) Maximum Average Forward Current 50% duty cycle VF Diode Forward Voltage IF = 75A VGE = 0V trr Reverse Recovery Time IF = 75A VR = 300V Qrr Reverse Recovery Charge di/dt =2000A/µs APT website – http://www.advancedpower.com Unit V Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C V 250 500 75 1.6 1.5 125 220 3.6 7.6 µA A 2 V ns µC May, 2005 Symbol Characteristic 2-5 APTGT75TDU60P – Rev 0, Electrical Characteristics APTGT75TDU60P Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M6 2500 -40 -40 -40 3 Typ Max 0.60 0.98 Unit °C/W V 175 125 100 5 250 °C N.m g Package outline (dimensions in mm) APT website – http://www.advancedpower.com 3-5 APTGT75TDU60P – Rev 0, May, 2005 5 places (3:1) APTGT75TDU60P Typical Performance Curve Output Characteristics (VGE =15V) 150 Output Characteristics 150 TJ=25°C VGE =19V T J = 150°C 125 125 VGE=13V 100 TJ=150°C IC (A) IC (A) T J=125°C 100 75 VGE=15V 75 50 50 25 25 VGE =9V T J=25°C 0 0 0.5 1 1.5 VCE (V) 0 2 2.5 0 3 5 T J=25°C 125 E (mJ) IC (A) 75 T J=125°C TJ =150°C 25 7 8 9 VGE (V) 3 10 11 25 75 100 125 150 Reverse Bias Safe Operating Area 175 150 Eon 125 IC (A) E (mJ) 50 IC (A) Eoff Eoff 100 75 50 Eon 2 Eon Er 0 12 6 4 Eoff 0 V CE = 300V V GE =15V I C = 75A T J = 150°C 8 3.5 2 Switching Energy Losses vs Gate Resistance 10 3 Eon T J=25°C 6 2.5 1 0 5 1.5 2 VCE (V) VCE = 300V VGE = 15V RG = 12Ω T J = 150°C 4 100 50 1 Energy losses vs Collector Current Transfert Characteristics 150 0.5 VGE =15V T J=150°C RG=12Ω 25 Er 0 0 0 10 20 30 40 50 60 Gate Resistance (ohms) 70 80 0 100 200 300 400 V CE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.5 0.4 0.3 0.2 0.1 IGBT 0.9 0.7 May, 2005 0.6 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds APT website – http://www.advancedpower.com 4-5 APTGT75TDU60P – Rev 0, Thermal Impedance (°C/W) 0.7 APTGT75TDU60P Forward Characteristic of diode 150 100 VCE=300V D=50% RG=12Ω TJ =150°C ZCS 80 ZVS 125 100 Tc=85°C IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120 60 40 75 T J=125°C 50 Hard switching 20 25 0 0 TJ =150°C T J=25°C 0 20 40 60 80 100 0 0.4 0.8 IC (A) 1.2 1.6 V F (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Thermal Impedance (°C/W) 1.2 Diode 1 0.8 0.9 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration in Seconds 1 10 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 5-5 APTGT75TDU60P – Rev 0, May, 2005 0 0.00001