INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRL2203N，IIRL2203N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±16 V ID Drain Current-Continuous 116 A IDM Drain Current-Single Pulsed 400 A PD Total Dissipation @TC=25℃ 180 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(ch-c) Rth(ch-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 0.85 ℃/W 62 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRL2203N， IIRL2203N ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BVDSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=60A 7.0 mΩ IGSS Gate-Source Leakage Current VGS=± 16V ±0.1 μA IDSS Drain-Source Leakage Current VDS=30V; VGS= 0V 25 μA VSD Diode forward voltage IS =60A, VGS = 0 V 1.2 V isc website：www.iscsemi.cn CONDITIONS VGS=0V; ID = 250µA 2 MIN TYP MAX UNIT 30 V 1.0 V isc & iscsemi is registered trademark