Optoisolators (Photocouplers) CNZ3731, CNC7C501, CNZ3734 CNC2S501, CNC7C502, CNC7H501 0 to Programmable controllers 1 2 3 4 5 6 7 8 0 4 1 16 3 2 3 15 14 Top View CNC7C501 CNC7C502 1 8 4 5 13 12 2 3 7 6 6 7 11 10 5 8 Top View 5˚ to 1 2.54 min. 8-0.5±0.1 8-1.2±0.15 2.54±0.25 +0.15 16 15 14 13 12 11 10 9 3.85±0.3 2.0 CNZ3734 CNC7H501 0 5˚ to 1 1,3: Anodee 2,4: Cathode 5,7: Emitter 6,8: Collector 5.2 max. 0.5 min. 7.62±0.3 6.2±0.5 Signal transfer between circuits with different potentials and impedances CNZ3731 CNC2S501 5˚ to 1 LED Mark FAX Pin Connection +0.15 8 7 6 5 CNZ3734/CNC7H501 19.82±0.5 Telephone exchange Unit : mm 0.25 –0 9.66±0.3 1 2 3 4 7.62±0.3 6.2±0.5 Applications Telephones 1: Anode 2: Cathode 3: Emitter 4: Collector Unit : mm 2.54 min. +0.15 A-type models have a guaranteed internal insulating distance of 0.4 mm 15˚ 5.2 max. 0.5 min. 0 UL listed (UL File No. E79920) 0 to CNC7C501/CNC7C502 Small DIL package for saving mounting space 4 15˚ 0.25 –0 High current transfer ratio with Darlington phototransistor output : CTR = 4000% (typ.) High I/O isolation voltage : VISO ≥ 5000 Vrms 4-0.5±0.1 4-1.2±0.15 2.54±0.25 3.85±0.3 2.0 7.62±0.3 6.2±0.5 3.85±0.3 2.0 High collector to emitter breakdown voltage : VCEO > 300 V, A type : VCEO > 350 V 2.54 min. 4 3 0.25 –0 4.58±0.3 1 2 LED Mark Features 2 5.2 max. 0.5 min. LED Mark The CNZ3731 series of optoisolators consist of a GaAs infrared LED which is optically coupled with a Si NPN Darlington phototransistor, and housed in a small DIL package. The series provides high I/O isolation voltage and high collector/emitter isolation voltage, as well as a high current transfer ratio (CTR). This opto isolator series also includes the two-channel CNC7C501 and the fourchannel CNZ3734, and A type of these models with increased collector to emitter breakdown voltage (VCEO > 350V). 1 Unit : mm CNZ3731/CNC2S501 Overview 16-0.5±0.1 16-1.2±0.15 2.54±0.25 Optoisolators 1 , 3 , 5 , 7 : Anode 2 , 4 , 6 , 8 : Cathode 5˚ 9,11,13,15: Emitter 1 0 to 10,12,14,16: Collector 9 Top View 1 CNZ3731, CNC7C501, CNZ3734, CNC2S501, CNC7C502, CNC7H501 Optoisolators (Photocouplers) Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings CNC7C501 CNZ3734 CNZ3731 CNC7C502 CNC7H501 CNC2S501 Unit Reverse voltage (DC) VR 6 6 V Forward current (DC) Input (Light emitting diode) Pulse forward current IF 50 50 mA IFP*1 1 1 A Power dissipation Collector current Output (Photo Collector to emitter voltage transistor) Emitter to collector voltage Collector power dissipation Total power dissipation Isolation voltage, input to output PD *2 75 75 mW IC 150 150 mA VCEO 300 350 V VECO 0.3 0.3 V PC *3 PT 150 300 150 mW 320 200 320 200 mW *4 5000 5000 Vrms Operating ambient temperature Topr –30 to +100 –30 to +100 ˚C Storage temperature Tstg –55 to +125 –55 to +125 ˚C *1 *2 *3 *4 VISO 300 Pulse width ≤ 100 µs, repeat 100 pps Input power derating ratio is 0.75 mW/˚C at Ta ≥ 25˚C. Output power derating ratio is 3.0 mW/˚C at Ta ≥ 25˚C (CNZ3731, CNC2S501). Output power derating ratio is 0.75 mW/˚C at Ta ≥ 25˚C (CNC7C501, CNC2S502, CNZ3734, CNC7H501). AC 1min., RH < 60 % Electrical Characteristics (Ta = 25˚C) Parameter Reverse current (DC) Input Forward voltage (DC) characteristics Capacitance between pins Collector cutoff current Output characteristics Collector to emitter capacitance DC current transfer ratio Symbol Conditions IR VR = 3V VF IF = 50mA Ct VR = 0V, f = 1MHz ICEO VCE = 200V CC VCE = 10V, f = 1MHz CTR*1 VCE = 2V, IF = 1mA *2 2 nA pF µs Rt = 100Ω 15 Collector to emitter saturation voltage VCE(sat) IF = 1mA, IC = 2mA *3 200 10 current transfer ratio (CTR) is a ratio of output current against DC input current. IC × 100 (%) IF tr : Time required for the collector current to increase from 10% to 90% of its final value tf : Time required for the collector current to decrease from 90% to 10% of its initial value 1000 V pF 40 VISO = 500V CTR = 1.5 30 VCC = 10V, IC = 10mA, RISO *1 DC µA % Isolation resistance, input to output Transfer characteristics Rise time tf*3 Unit 10 pF f = 1MHz Fall time 1.35 max 0.7 CISO tr typ 4000 Isolation capacitance, input to output *2 min Ω 1011 µs 1.0 V Optoisolators (Photocouplers) CNZ3731, CNC7C501, CNZ3734, CNC2S501, CNC7C502, CNC7H501 PD — Ta PC — Ta IFP — DR 10 5 100 50 0 – 30 0 25 50 75 100 IFP (mA) 150 300 CNZ3731 CNC2S501 200 CNC7C501/ CNC7C502 CNZ3734/ CNC7H501 100 0 – 30 125 Allowable pulse forward current PC (mW) 400 Collector power dissipation LED Power dissipation PD (mW) 200 Ambient temperature Ta (˚C ) 0 25 50 75 100 Pulse width ≤ 100µs Ta = 25˚C 10 4 10 3 10 2 10 10 –3 125 10 –2 Ambient temperature Ta (˚C ) IF — VF IC — VCE 60 10 –1 1 Duty ratio DR IC — VCE(sat) 10 3 160 Ta = 25˚C Pc(max.) Ta = 25˚C Ta = 25˚C IF = 5mA 30 20 IC (mA) 40 120 3mA 2mA 80 10 2 2mA 1mA Collector current IC (mA) IF = 5mA Collector current Forward current IF (mA) 50 1.5mA 1mA 40 10 0.5mA 1 10 0.5mA 0 0.4 0.8 1.2 1.6 2.0 0 2.4 Forward voltage VF (V) 0 10 1 10 Forward current IF (mA) 10 2 0.4 0.8 10 4 10 3 1 1.2 Collector saturation voltage VCE(sat) (V) Relative CTR — Ta 10 5 10 2 10 –1 0 120 VCE = 2V Ta = 25˚C DC current transfer ratio CTR (%) IC (mA) Collector current 10 –1 8 CTR — IF VCE = 2V Ta = 25˚C 1 6 10 6 10 2 10 –1 10 –1 4 Collector to emitter voltage VCE (V) IC — IF 10 3 2 10 Forward current IF (mA) 10 2 Relative DC current transfer ratio CTR (%) 0 IF = 1mA VCE = 2V 100 80 60 40 – 40 – 20 0 20 40 60 80 100 Ambient temperature Ta (˚C ) 3 CNZ3731, CNC7C501, CNZ3734, CNC2S501, CNC7C502, CNC7H501 VCE(sat) — Ta ICEO — Ta Ta = 25˚C VCE = 200V IF = 1mA IC = 2mA 1.0 0.8 10 –7 10 –8 Dark current ICEO (A) 1.2 ICEO (A) 10 –6 1.4 Dark current Collector to emitter saturation voltage VCE(sat) (V) ICEO — VCE 10 –5 1.6 10 –9 10 –8 10 –9 10 –10 0.6 0.4 – 40 – 20 0 20 40 60 80 100 Ambient temperature Ta (˚C ) 10 –11 – 40 – 20 VCC = 10V IC = 10mA Ta = 25˚C 0 20 40 60 80 10 –10 10 100 Ambient temperature Ta (˚C ) Response time — External load resistance characteristics 10 3 Optoisolators (Photocouplers) 10 –2 10 –3 Collector to emitter voltage VCE (V) Response time measurement circuit tr 10 2 (µs) Response time Sig.IN tf td ts VCC V1 5ms 10 V1 50Ω ,,,, ,,, , RL 1 10 –1 10 –2 10 –1 1 90% 10% V2 td tr ts tf 10 External load resistance RL (kΩ) Frequency characteristics 10 Measurement circuit of frequency characteristics VCE = 4V Ta = 25˚C IC = 10mA RL = 10Ω 50kΩ 16V 100µF Sig.OUT + 50Ω ,,, 5kΩ 1 10 10 2 Frequency f (kHz) 10 3 RL 4mAp - p 50Ω – 20 – IC = 10mA Sig.IN 1kΩ ,,,, 100Ω – 10 – 30 10 –1 4 +10V ,, Voltage gain AV (dB) VCC 0