AP9950AGH-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic 68V RDS(ON) 10.5mΩ ID G ▼ RoHS Compliant & Halogen-Free BVDSS 70A S Description AP9950A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. G D S TO-252(H) o Absolute Maximum Ratings@Tj=25 C(unless otherwise specified) Symbol Parameter . Rating Units VDS Drain-Source Voltage 68 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Drain Current, VGS @ 10V 70 A ID@TC=100℃ Drain Current, VGS @ 10V 45 A 240 A 92.6 W 2 W 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 3 PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data and specifications subject to change without notice 3 Value Units 1.35 ℃/W 62.5 ℃/W 1 201501163 AP9950AGH-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS Parameter Test Conditions Drain-Source Breakdown Voltage 2 Min. Typ. Max. Units VGS=0V, ID=250uA 68 - - V VGS=10V, ID=40A - - 10.5 mΩ RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=30A - 47 - S IDSS Drain-Source Leakage Current VDS=68V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=30A - 58 93 nC Qgs Gate-Source Charge VDS=56V - 14 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 24 - nC td(on) Turn-on Delay Time VDS=30V - 19 - ns tr Rise Time ID=30A - 65 - ns td(off) Turn-off Delay Time RG=3.3Ω - 30 - ns tf Fall Time VGS=10V - 12 - ns Ciss Input Capacitance VGS=0V - 3300 5280 pF Coss Output Capacitance VDS=25V - 300 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 185 - pF Rg Gate Resistance f=1.0MHz - 1.1 2 Ω Min. Typ. IS=40A, VGS=0V - - 1.3 V . Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=10A, VGS=0V - 45 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 85 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 2 3.Surface mounted on 1 in copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9950AGH-HF 240 160 10V 9.0V o T C = 25 C 10V 9.0V 8.0V o T C = 150 C ID , Drain Current (A) ID , Drain Current (A) 200 8.0V 160 7.0V 120 V GS =6.0V 80 120 7.0V V GS =6.0V 80 40 40 0 0 0 4 8 12 16 20 24 0 4 8 12 16 20 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.4 1.2 I D =40A V G =10V I D =1mA 2.0 1 . Normalized RDS(ON) Normalized BVDSS 1.1 1.6 1.2 0.9 0.8 0.4 0.8 -50 0 50 100 -50 150 0 50 100 150 T j , Junction Temperature ( o C) o T j , Junction Temperature ( C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 2.0 40 I D =250uA 1.6 o Normalized VGS(th) IS(A) 30 o T j =150 C T j =25 C 20 1.2 0.8 10 0.4 0 0.0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9950AGH-HF f=1.0MHz 4000 I D =30A V DS =56V 10 C iss 3000 8 C (pF) VGS , Gate to Source Voltage (V) 12 6 2000 4 1000 2 C oss C rss 0 0 0 20 40 60 1 80 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Operation in this area limited by RDS(ON) ID (A) 100 100us 10 1ms o 10ms 100ms DC T C =25 C Single Pulse 1 0.1 1 10 100 . Normalized Thermal Response (R thjc) 1000 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + TC Single Pulse 0.01 0.00001 0.0001 0.001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 AP9950AGH-HF MARKING INFORMATION 9950AGH Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence . 5