NJRC NJG1106KB2-C1 800mhz band lna gaas mmic Datasheet

NJG1106KB2
800MHz BAND LNA GaAs MMIC
nGENERAL DESCRIPTION
NJG1106KB2 is a low noise amplifier GaAs MMIC
designed for 800MHz band cellular phone handsets.
This amplifier provides low noise figure of 1.3dB and
low current consumption of 3mA at low supply voltage
of 2.7V.
NJG1106KB2 includes internal self-bias circuit and
input DC blocking capacitor in a ultra small and ultra
thin package of FLP6-B2.
nFEATURES
lLow voltage operation
lLow current consumption
lSmall signal gain
lLow noise figure
lHigh Input IP3
lHigh Output IP3
lUltra small & ultra thin package
nPACKAGE OUTLINE
NJG1106KB2
+2.7V typ.
2.5mA typ.
17dB typ. @f=820MHz
1.3dB typ. @f=820MHz
-4dBm typ. @f=820.0+820.1MHz
+13dBm typ. @f=820+820.1MHz
FLP6-B2 (Mount Size: 2.1x2.0x0.75mm)
nPIN CONFIGURATION
KB2 Type
(Top View)
4
5
6
3
AMP
2
PIN CONNECTION
1.RFout
2.GND
3.EXTCAP
4.GND
5.GND
6.RFin
1
Package orientation mark
Note: Specifications and description listed in this catalog are subject to change without prior notice.
-1-
NJG1106KB2
nABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Drain Voltage
VDD
Input Power
Pin
Power Dissipation
PD
Operating Temp.
Storage Temp.
(Ta=+25°C, Zs=Zl=50Ω)
RATINGS
UNITS
CONDITIONS
6.0
V
VDD=2.7V
+15
dBm
Tj=125°C, mount on PCB
FR4 20X20X0.2mm
450
mW
Topr
-40 ~ +85
°C
Tstg
-55 ~ +125
°C
nELECTRICAL CHARACTERISTICS
(VDD=2.7V, f=820MHz, Ta=+25°C, Zs=Zl=50Ω)
CONDITIONS
MIN
TYP
MAX
UNITS
PARAMETER
SYMBOL
Operating frequency
freq
800
820
1000
MHz
Drain voltage
VDD
2.5
2.7
5.5
V
Operating current
IDD
-
2.5
3.4
mA
Small signal gain
Gain
15.0
17.0
19.0
dB
Gain flatness
Gflat
-
0.5
1.0
dB
Noise figure
NF
-
1.3
1.5
dB
Pout at 1dB gain
compression point
Input 3rd order
Intercept point
Output 3rd order
Intercept point
RF Input port
VSWR
RF Output port
VSWR
-2-
RF OFF
f=810~885MHz
P-1dB
VDD=2.7V, f=820MHz
-4.0
0.0
-
dBm
IIP3
f=820.0+820.1MHz
-8.0
-4.0
-
dBm
OIP3
f=820.0+820.1MHz
+9.0
+13.0
-
dBm
VSWRi
VDD=2.7V, f=820MHz
-
1.5
2.0
VSWRo
VDD=2.7V, f=820MHz
-
1.5
2.0
NJG1106KB2
nTERMINAL INFORMATION
Pin
1
Function
RFout
2,4,5 GND
3
EXTCAP
6
RFin
Description
RF output and voltage supply pin. External matching circuits and a bypass
capacitor is required. L4 is a RF choke inductor and C1 is a DC blocking
capacitor. These elements are used as output matching circuit. C2 is a bypass
capacitor. (Please refer to “RECOMMENDED CIRCUIT”)
Ground pin. To keep good RF grounding performance, please use multiple via
holes to connect with ground plane and this pin.
An external bypass capacitor is required. (Please refer to “RECOMMENDED
CIRCUIT”)
RF input pin. A DC blocking capacitor is not required. An external matching circuit
is required. (Please refer to “RECOMMENDED CIRCUIT”)
-3-
NJG1106KB2
nTYPICAL CHARACTERISTICS
NJG1106KB2 Gain,NF vs. Freq
VDD=2.7V,IDD=2.9mA,Ta=25 oC
NJG1106KB2 S11,S21,S12,S22 vs. Freq
o
VDD=2.7V, IDD=2.9mA, Ta=25 C
3.0
20
25
Gain
50
20
40
1.5
5
15
30
10
20
5
10
0
0
S11
-5
-10
S22
-10
-20
-15
NF
-30
S12
-20
0
700
750
800
850
900
950
1.0
1000
0
500
1000
NJG1106KB2 Pout,Gain vs. Pin
NJG1106KB2 Pout,IM3 vs. Pin
o
VDD=2.7V, IDD=2.9mA, Freq=820+820.1MHz, Ta=25 C
o
20
20
5
Gain
0
0
15
-5
-10
10
Pout
Pout (dBm)
Pout
Gain (dB)
Pout (dBm)
P-1dB=-0.5dBm
-20
-40
-60
OIP3=+13.7dBm
IIP3=-4.1dBm
-80
-20
5.0
-40
-35
-50
2000
1500
Freq (GHz)
VDD=2.7V, IDD=2.9mA, Freq=820MHz, Ta=25 C
-25
-45
-40
-25
freq (GHz)
-15
-30
-25
-20
Pin (dBm)
-15
-10
-5
-100
-45
IM3
-40
-35
-30
-25
-20
-15
-10
Pin (dBm)
Equations of OIP3 and IIP3
3 × Pout - IM3
OIP3 =
2
IIP3 = OIP3 - Gain @ Pin=-40dBm
-4-
S12 (dB)
Gain (dB)
2.0
10
NF (dB)
2.5
15
S11,S21,S22 (dB)
S21
-5
NJG1106KB2
nTYPICAL CHARACTERISTICS
NJG1106KB2 IDD vs. VDD
NJG1106KB2 Gain,NF vs. VDD
o
o
Freq=820MHz,Ta=25 C
Freq=820MHz,Ta=25 C
18.0
2.0
3.2
17.8
1.8
3.1
17.6
1.6
3.0
17.4
1.4
IDD (mA)
NF (dB)
Gain (dB)
Gain
2.9
NF
17.2
17.0
2.0
2.8
1.2
2.5
3.0
3.5
4.0
4.5
5.0
5.5
2.7
2.0
1.0
6.0
2.5
3.0
3.5
VDD (V)
4.0
4.5
5.0
5.5
6.0
VDD (V)
NJG1106KB2 OIP3,IIP3 vs. VDD
NJG1106KB2 OIP3,IIP3 vs. Freq
Freq=820+820.1MHz, Ta=25oC
VDD=2.7V, IDD=3mA, Freq=820+820.1MHz, Ta=25 oC
20
0
20
0
-2
18
-2
14
-6
12
-8
16
-4
IIP3
14
-6
IIP3 (dBm)
-4
OIP3
OIP3 (dBm)
OIP3(dBm)
16
IIP3 (dBm)
IIP3
18
OIP3
10
2.0
2.5
3.0
3.5
4.0
4.5
VDD (V)
5.0
5.5
-10
6.0
12
10
800
-8
820
840
860
880
-10
900
freq (MHz)
Equations of OIP3 and IIP3
3 × Pout - IM3
OIP3 =
2
IIP3 = OIP3 - Gain @ Pin=-40dBm
-5-
NJG1106KB2
nTYPICAL CHARACTERISTICS
NJG1106KB2 Gain,NF vs. Ta
VDD=2.7V,Freq=820MHz
20
NJG1106KB2 IDD vs. Ta
VDD=2.7V,Freq=820MHz
4.0
5.0
16
3.0
14
2.0
12
1.0
3.5
IDD (mA)
4.0
NF (dB)
Gain (dB)
Gain
18
3.0
2.5
NF
10
-50
0
50
2.0
-50
0.0
100
o
Ta ( C)
0
Ta ( oC)
50
NJG1106KB2 OIP3,IIP3 vs. Ta
0
18
-2
IIP3
16
-4
14
-6
OIP3
12
10
-50
-8
0
o
Ta ( C)
-6-
50
-10
100
IIP3 (dBm)
OIP3 (dBm)
VDD=2.7V,Freq=820+820.1MHz
20
Equations of OIP3 and IIP3
3 × Pout - IM3
OIP3 =
2
IIP3 = OIP3 - Gain @ Pin=-40dBm
100
NJG1106KB2
nTYPICAL CHARACTERISTICS
NJG1106KB2 S11 vs. Freq(to 20GHz)
NJG1106KB2 S22 vs. Freq(to 20GHz)
o
o
VDD=2.7V, IDD=2.9mA, Ta=25 C
25
25
20
20
15
15
10
10
5
5
S22 (dB)
S11 (dB)
VDD=2.7V, IDD=2.9mA, Ta=25 C
0
-5
0
-5
-10
-10
-15
-15
-20
-20
-25
0
5
10
15
-25
20
0
5
Freq (GHz)
NJG1106KB2 S21 vs. Freq(to 20GHz)
50
20
40
15
30
10
20
5
10
S12 (dB)
S21 (dB)
25
0
-5
0
-10
-10
-20
-15
-30
-20
-40
5
10
Freq (GHz)
20
VDD=2.7V, IDD=2.9mA, Ta=25 oC
VDD=2.7V, IDD=2.9mA, Ta=25 C
0
15
NJG1106KB2 S12 vs. Freq(to 20GHz)
o
-25
10
Freq (GHz)
15
20
-50
0
5
10
15
20
Freq (GHz)
-7-
NJG1106KB2
nTYPICAL CHARACTERISTICS
Scattering Parameter Table
VDD=2.7V, IDD=2.9mA, Zo=50Ω
S11
S21
Freq
mag
ang
mag
ang
(MHz)
(units)
(deg)
(units)
(deg)
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
0.996
0.995
0.993
0.982
0.964
0.947
0.930
0.914
0.897
0.884
0.874
0.860
0.851
0.838
0.831
0.822
0.815
0.809
0.803
0.796
-1.8
-4.8
-7.2
-9.6
-11.7
-13.9
-15.5
-17.3
-18.7
-20.2
-21.5
-22.6
-23.8
-24.9
-26.1
-27.0
-28.2
-29.7
-30.6
-31.8
1.298
1.846
2.029
2.056
2.029
1.964
1.892
1.816
1.733
1.659
1.582
1.513
1.449
1.385
1.330
1.279
1.235
1.194
1.153
1.120
-142.2
-164.1
179.1
165.7
155.1
145.6
137.5
130.0
123.2
117.0
111.1
105.8
100.7
96.1
91.4
87.0
83.0
78.9
75.2
71.8
4
S12
S22
mag
(units)
ang
(deg)
mag
(units)
ang
(deg)
0.005
0.003
0.006
0.006
0.007
0.006
0.008
0.008
0.009
0.009
0.010
0.011
0.012
0.012
0.014
0.014
0.016
0.017
0.018
0.019
70.0
-6.6
38.5
36.0
47.8
54.7
55.8
60.4
62.5
61.0
69.4
70.7
72.6
80.1
77.4
84.4
85.1
90.7
87.7
91.9
0.967
0.953
0.942
0.939
0.931
0.928
0.918
0.916
0.906
0.903
0.898
0.893
0.886
0.883
0.878
0.874
0.871
0.869
0.865
0.864
-2.3
-3.7
-4.9
-6.1
-7.3
-8.5
-9.7
-10.9
-12.2
-13.4
-14.7
-16.1
-17.3
-18.9
-20.0
-21.3
-22.7
-24.1
-25.4
-26.8
3
1000pF
5
Network Analyzer
Port1
AMP
2
1
6
Network Analyzer
Port2
Reference Plane
Note
VDD (=2.8V) is supplied through “BIAS CONNECT (PORT2)” of Network Analyzer.
-8-
NJG1106KB2
nRECOMMENDED CIRCUIT (f=810~885MHz)
( Top View )
4
3
C3
5
2
AMP
L3
L2
6
RF Input
L1
C1
1
RF Output
L4
VDD=2.7V
C2
-9-
NJG1106KB2
nRECOMMENDED PCB DESIGN
(Top View)
C3
RF IN
L2
NJG1106
L4 C1
L3
L1
RF OUT
C2
PCB SIZE: 14.0x14.0mm
PCB: FR4, t=0.2mm
MICROSTRIP LINE WIDTH=0.4mm(Zo=50Ω)
Parts List (f=810~885MHz)
Parts ID
Constant
Comment
L1
82nH
TAIYO-YUDEN HK1005 Series
L2
33nH
TAIYO-YUDEN HK1608 Series
L3
39nH
TAIYO-YUDEN HK1005 Series
L4
12nH
TAIYO-YUDEN HK1005 Series
C1
4pF
MURATA GRM36 Series
C2, C3
1000pF
MURATA GRM36 Series
NOTES:
1. Please use L1 to stabilize amplifier. This element pull input impedance down at low
frequency region (up to 400MHz).
2. Please use chip inductor which has low resistance at input circuit. (A low resistance inductor
of 1608 size (1.6mm x 0.8mm) is used in the circuit example above.) Because any losses at
input circuit cause NF degradation.
3. The capacitor C3 is a bypass capacitor connected with self-biasing resistor. The small signal
gain can be controlled by this capacitor. (Gain=18.5dB @ C3=30pF)
- 10 -
NJG1106KB2
nPACKAGE OUTLINE (FLP6-B2)
0.75±0.05
2.0±0.1
5
4
2.1±0.1
0.2
1.7±0.1
0.2
6
+0.1
0.15-0.05
1
2
3
0.65
0.1
0.1
0.65
+0.1
0.2-0.05
Lead material
Lead surface finish
Molding material
UNIT
Weight
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
• To waste this product, please obey the relating law of your country.
: Copper
: Solder plating
: Epoxy resin
: mm
: 6.5mg
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please
handle with care to avoid these damages.
- 11 -
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