Austin AS29F010F-120/883C 128k x 8 flash uniform sector 5.0v flash memory Datasheet

FLASH
AS29F010
Austin Semiconductor, Inc.
128K x 8 FLASH
PIN ASSIGNMENT
(Top View)
UNIFORM SECTOR 5.0V FLASH MEMORY
32-PIN Ceramic DIP (CW)
32-pin Flatpack (F)
32-pin Lead Formed Flatpack (DCG)
AVAILABLE AS MILITARY
SPECIFICATIONS
• MIL-STD-883
• SMD 5962-96690
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
FEATURES
• Single 5.0V ±10% power supply operation
• Low power consumption:
3 12 mA typical active read current
3 30 mA typical program/erase current
3 <1 µA typical standby current
• Flexible sector architecture
3 Eight 16Kbyte sectors
3 Any combination of sectors can be erased
3 Full chip erase
• Sector protection
3 Hardware-based feature that disables/reenables program
and erase operations in any combination of sectors
3 Sector protection/unprotection can be implemented
using standard PROM programming equipment
• Embedded Algorithms
3 Embedded Erase algorithm automatically pre-programs
and erases the chip or any combination of designated
sectors
3 Embedded Program algorithm automatically programs
and verifies data at specified address
• Erase Suspend/Resume
3 Supports reading data from a sector not being erased
• Minimum 1,000,000 Program/Erase Cycles per sector
guaranteed
• Compatible with JEDEC standards
3 Pinout and software compatible with single-powersupply FLASH
3 Superior inadvertent write protection
• Data\ Polling and Toggle Bits
3 Provides a software method of detecting program or
erase cycle completion
OPTIONS
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
WE\
NC
A14
A13
A8
A9
A11
OE\
A10
CE\
DQ7
DQ6
DQ5
DQ4
DQ3
MARKING
• Timing
50ns*
60ns
70ns
90ns
120ns
150ns
-50
-60
-70
-90
-120
-150
• Package
Ceramic DIP (600 mil)
Flatpack
Lead Formed Flatpack
Small Outline J-Lead
CW
F
DCG
SOJ
• Temperature
Industrial Temperature (-40°C to +85°C) IT
Military Temperature (-55°C to +125°C) XT
883C Processing (-55°C to +125°C)
883C
QML Processing (-55°C to +125°C)
Q
For more products and information
please visit our web site at
www.austinsemiconductor.com
NOTES:
AS29F010
Rev. 2.3 12/08
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
*50ns (-50) option available with IT and XT options only.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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Austin Semiconductor, Inc.
AS29F010
GENERAL DESCRIPTION
The AS29F010 is a 1Mbit, 5.0 Volt-only FLASH memory
organized as 131,072 bytes. The AS29F010 is offered in a 32-pin
CDIP package. The byte-wide data appears on DQ0-DQ7. The
device is designed to be programmed in-system with the
standard system 5.0 Volt VCC supply. A 12.0 volt VPP is not
required for program or erase operations. The device can also
be programmed or erased in standard EPROM programmers.
This device is manufactured using 0.32 µm process
technology. It is available with access times of 50, 60, 70, 90,
120, and 150ns, allowing high-speed microprocessors to
operate without wait states. To eliminate bus contention the
device has separate chip enable (CE\), write enable (WE\), and
output enable (OE\) controls.
The device requires only a single 5.0 volt power supply for
both read and write functions. Internally generated and
regulated voltages are provided for the program and erase
operations.
The device is entirely command set compatible with the
JEDEC single-power-supply FLASH standard. Commands are
written to the command register using standard microprocessor
write timings. Register contents serve as input to an internal
state machine that controls the erase and programming circuitry.
Write cycles also internally latch addresses and data needed for
the programming and erase operations. Reading data out of the
device is similar to reading from other FLASH or EPROM
devices.
Device programming occurs by executing the program
command sequence. This invokes the Embedded Program
algorithm -- an internal algorithm that automatically times the
program pulse widths and verifies proper cell margin.
Device erasure occurs by executing the erase command
sequence. This invokes the Embedded Erase algorithm -- an
internal algorithm that automatically preprograms the array (if it
is not already programmed) before executing the erase
operation. During erase, the device automatically times the
erase pulse widths and verifies proper cell margin.
The host system can detect whether a program or erase
operation is complete by reading the DQ7 (Data\Polling) and
DQ6 (toggle) status bits. After a program or erase cycle has
been completed, the device is ready to read array data or accept
another command.
The sector erase architecture allows memory sectors to be
erased and reprogrammed without affecting the data contents
of other sectors. The device is erased when shipped from the
factory.
The hardware data protection measures include a low VCC
detector that automatically inhibits write operations during
power transitions. The hardware sector protection feature
disables both program and erase operations in any
combination of the sectors of memory, and is implemented
using standard EPROM programmers.
The system can place the device into the standby mode.
Power consumption is greatly reduced in this mode. The
device electrically erases all bits within a sector simultaneously
via Fowler-Nordheim tunneling. The bytes are programmed
one byte at a time using the EPROM programming mechanism
of hot electron injection.
PIN CONFIGURATION
LOGIC SYMBOL
PIN
A0 - A16
DQ0 - DQ7
CE\
OE\
WE\
DESCRIPTION
17 Addresses
8 Data Inputs/Outputs
Chip Enable
Output Enable
Write Enable
VCC
+5 Volt Single Power Supply
VSS
Device Ground
NC
No Connect
AS29F010
Rev. 2.3 12/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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Austin Semiconductor, Inc.
AS29F010
FUNCTIONAL BLOCK DIAGRAM
AS29F010
Rev. 2.3 12/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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AS29F010
Austin Semiconductor, Inc.
DEVICE BUS OPERATIONS
Writing Commands/Command Sequences
This section describes the requirements and use of the
device bus operations, which are initiated through the internal
command register. The command register itself does not
occupy any addressable memory location. The register is
composed of latches that store the commands, along with the
address and data information needed to execute the command.
The contents of the register serve as inputs to the internal state
machine. The state machine outputs dictate the function of the
device. The appropriate device bus operations table lists the
inputs and control levels required, and the resulting output.
The following subsections describe each of these operations
in further detail.
To write a command or command sequence (which includes
programming data to the device and erasing sectors of memory),
the system must drive WE\ and CE\ to VIL, and OE\ to VIH.
An erase operation can erase one sector, multiple sectors,
or the entire device. The Sector Address Tables indicate the
address space that each sector occupies. A “sector address”
consists of the address bits required to uniquely select a
sector. See the “Command Definitions” section for details on
erasing a sector or the entire chip.
After the system writes the autoselect command sequence,
the device enters the autoselect mode. The system can then
read autoselect codes from the internal register (which is
separate from the memory array) on DQ7 - DQ0. Standard read
cycle timings apply in this mode. Refer to the “Autoselect
Mode” and “Autoselect Command Sequence” sections for more
information.
ICC2 in the DC Characteristics table represents the active
current specification for the write mode. The “AC
Characteristics” section contains timing specification tables
and timing diagrams for write operations.
Requirements for Reading Array Data
To read array data from the outputs, the system must drive
the CE\ and OE\ pins to VIL. CE\ is the power control and
selects the device. OE\ is the output control and gates array
data to the output pins. WE\ should remain at VIH.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This ensures
that no spurious alteration of the memory content occurs
during the power transition. No command is necessary in this
mode to obtain array data. Standard microprocessor read cycles
that assert valid addresses on the device address inputs
produce valid data on the device data outputs. The device
remains enabled for read access until the command register
contents are altered.
See “Reading Array Data” for more information. Refer to
the AC Read Operations table for timing specifications and to
the Read Operations Timings diagram for the timing waveforms.
ICC1 in the DC Characteristics table represents the active
current specification for reading array data.
Program and Erase Operation Status
During an erase or program operation, the system may
check the status of the operation by reading the status bits on
DQ7 - DQ0. Standard read cycle timings and ICC read
specifications apply. Refer to “Write Operation Status” for
more information, and to each AC Characteristics section in the
appropriate data sheet for timing diagrams.
TABLE 1: DEVICE BUS OPERATIONS
OPERATION
Addresses1 DQ0 - DQ7
CE\
OE\
WE\
Read
L
L
H
AIN
DOUT
Write
L
H
L
AIN
DIN
Standby
Output Disable
Hardware Reset
VCC ± 0.5V
X
X
X
High-Z
L
X
H
X
H
X
X
X
High-Z
High-Z
NOTES:
1. Addresses are A16:A0.
2. The sector protect and sector unprotect functions must be implemented via programming equipment. See the “Sector Protection/
Unprotection” section.
AS29F010
Rev. 2.3 12/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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Austin Semiconductor, Inc.
AS29F010
address bits that are don’t care. When all necessary bits have
been set as required, the programming equipment may then
read the corresponding identifier code on DQ7 - DQ0
To access the autoselect codes in-system, the host system
can issue the autoselect command via the command register, as
shown in the Command Definitions table. This method does
not require VID. See “Command Definitions” for details on
using the autoselect mode.
Standby Mode
When the system is not reading or writing to the device, it
can place the device in the standby mode. In this mode, current
consumption is greatly reduced, and the outputs are placed in
the high impedance state, independent of the OE\ input.
The device enters the CMOS standby mode when the CE\
pin is held at VCC ± 0.5V. (Note that this is a more restricted
voltage range than VIH.) The device enters the TTL standby
more when CE\ is held at VIH. The device requires the standard
access time (tCE) before it is ready to read data.
If the device is deselected during erasure or programming,
the device draws active current until the operation is completed.
ICC3 in the DC Characteristics table represents the standby
current specification.
Sector Protection/Unprotection
When the OE\ input is at VIH, output from the device is
disabled. The output pins are placed in the high impedance
state.
The hardware sector protection feature disables both
program and erase operations in any sector. The hardware
sector unprotection feature re-enables both program and erase
operations in previously protected sectors.
Sector protection/unprotection must be implemented
using programming equipment. The procedure requires a high
voltage (VID) on address pin A9 and the control pins. The
device is shipped with all sectors unprotected. It is possible to
determine whether a sector is protected or unprotected. See
“Autoselect Mode” for details.
Autoselect Mode
Hardware Data Protection
The autoselect mode provides manufacturer and device
identification, and sector protection verification, through
identifier codes output on DQ7 - DQ0. This mode is primarily
intended for programming equipment to automatically match a
device to be programmed with its corresponding programming
algorithm. However, the autoselect codes can also be accessed
in-system through the command register.
When using programming equipment, the autoselect mode
requires VID on address pin A9. Address pins A6, A1, and A0
must be as shown in the Autoselect Codes (High Voltage
Method) table. In addition, when verifying sector protection,
the sector address must appear on the appropriate highest
order address bits. Refer to the corresponding Sector Address
Tables. The Command Definitions table shows the remaining
The command sequence requirement of unlock cycles for
programming or erasing provides data protection against
inadvertent writes (refer to the Command Definitions table). In
addition, the following hardware data protection measures
prevent accidental erasure or programming, which might
otherwise be caused by spurious system level signals during
VCC power-up and power-down transitions, or from system
noise.
Output Disable Mode
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept
any write cycles. This protects data during VCC power-up and
power-down. The command register and all internal program/
TABLE 2: SECTOR ADDRESSES TABLE
SECTOR
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
NOTE:
A16
0
0
0
0
1
1
1
1
A15
0
0
1
1
0
0
1
1
A14
0
1
0
1
0
1
0
1
ADDRESS RANGE
00000h - 03FFFh
04000h - 07FFFh
08000h - 0BFFFh
0C000h - 0FFFFh
10000h - 13FFFh
14000h - 17FFFh
18000h - 1BFFFh
1C000h - 1FFFFh
All sectors are 16 Kbytes in size.
AS29F010
Rev. 2.3 12/08
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Austin Semiconductor, Inc.
erase circuits are disabled, and the device resets. Subsequent
writes are ignored until VCC is greater than VLKO. The system
must provide the proper signals to the control pins to prevent
unintentional writes when VCC is greater than VLKO.
Reading Array Data
The device is automatically set to reading array data after
device power-up. No commands are required to retrieve data.
The device is also ready to read array data after completing an
Embedded Program or Embedded Erase algorithm.
The system must issue the reset command to re-enable the
device for reading array data if DQ5 goes high, or while in the
autoselect mode. See the “Reset Command” section, next.
See also “Requirements for Reading Array Data” in the
“Device Bus Operations” section for more information. The
Read Operations table provides the read parameters, and the
Read Operation Timings diagram shows the timing diagram.
Write Pulse “Glitch” Protection
Noise pulses of less than 5ns (typical) on OE\, CE\, or WE\
do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE\ = VIL,
CE\ = VIH or WE\ = VIH. To initiate a write cycle, CE\ and WE\
must be a logical zero while OE\ is a logical one.
Reset Command
Writing the reset command to the device resets the device
to reading array data. Address bits are don’t care for this
command.
The reset command may be written between the sequence
cycles in an erase command sequence before erasing begins.
This resets the device to reading array data. Once erasure
begins, however, the device ignores reset commands until the
operation is complete.
The reset command may be written between the sequence
cycles in a program command sequence before programming
begins. This resets the device to reading array data. Once
programming begins, however, the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence
cycles in an autoselect command sequence. Once in the
autoselect mode, the reset command must be written to return
to reading array data.
If DQ5 goes high during a program or erase operation,
writing the reset command returns the device to reading array
data.
Power-Up Write Inhibit
If WE\ = CE\ = VIL and OE\ = VIH during power up, the
device does not accept commands on the rising edge of WE\.
The internal state machine is automatically reset to reading
array data on power-up.
COMMAND DEFINITIONS
Writing specific address and data commands or sequences
into the command register initiates device operations. The
Command Definitions table defines the valid register command
sequences. Writing incorrect address and data values or
writing them in the improper sequence resets the device to
reading array data.
All addresses are latched on the falling edge of WE\ or
CE\, whichever happens first. Refer to the appropriate timing
diagrams in the “AC Characteristics” section.
TABLE 3: Autoselect Codes (High Voltage Method)
DESCRIPTION
A16 to A13 to
A9
A14 A10
A8
to
A7
A6
A5
to
A2
A1
A0
DQ7 to DQ0
X
VID
X
L
X
L
L
01h
X
VID
X
L
X
L
H
20h
CE\
OE\
WE\
Manufacturer ID
L
L
H
X
Device ID
L
L
H
X
Sector Protection
Verification
NOTE:
01h
(protected)
L
L
H
SA
VID
X
X
L
X
H
L
00h
(unprotected)
L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t Care
AS29F010
Rev. 2.3 12/08
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AS29F010
command sequence is initiated by writing two unlock cycles,
followed by a set-up command. Two additional unlock write
cycles are then followed by the chip erase command, which in
turn invokes the Embedded Erase algorithm. The device does
not require the system to preprogram prior to erase. The
Embedded Erase algorithm automatically preprograms and
verifies the entire memory for an all zero data pattern prior to
electrical erase. The system is not required to provide any
controls or timings during these operations. The Command
Definitions table shows the address and data requirements for
the chip erase command sequence.
Any commands written to the chip during the Embedded
Erase algorithm are ignored.
The system can determine the status of the erase
operation by using DQ7 or DQ6. See “Write Operation Status”
for information on these status bits. When the Embedded Erase
algorithm is complete, the device returns to reading array data
and addresses are no longer latched.
Figure 2 illustrates the algorithm for the erase operation.
See the Erase/Program Operations tables in “AC
Characteristics” for parameters, and the Chip /Sector Erase
Operation Timings for timing waveforms.
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and devices codes, and
determine whether or not a sector is protected. The Command
Definitions table shows the address and data requirements.
This method is an alternative to that shown in the Autoselect
Codes (High Voltage Method) table, which is intended for
PROM programmers and requires VID on address bit A9.
The auto select command sequence is initiated by writing
two unlock cycles, followed by the autoselect command. The
device then enters the autoselect mode, and the system may
read at any address any number of times, without initiating
another command sequence.
A read cycle at address XX00h or retrieves the
manufacturer code. A read cycle at address XX01h returns the
device code. A read cycle containing a sector address (SA)
and the address 02h in returns 01h if that sector is protected, or
00h if it is unprotected. Refer to the Sector Address tables for
valid sector addresses.
The system must write the reset command to exit the
autoselect mode and return to reading array data.
Byte Program Command Sequence
FIGURE 1: PROGRAM OPERATION
Programming is a four-bus-cycle operation. The program
command sequence is initiated by writing two unlock write
cycles, followed by the program set-up command. The
program address and data are written next, which in turn initiate
the Embedded Program algorithm. The system is not required
to provide further controls or timings. The device
automatically provides internally generated program pulses and
verify the programmed cell margin. The Command Definitions
take shows the address and data requirements for the byte
program command sequence.
When the Embedded Program algorithm is complete, the
device then returns to reading array data and addresses are no
longer latched. The system can determine the status of the
program operation by using DQ7 or DQ6. See “Write Operation
Status” for information on these status bits.
Any commands written to the device during the
Embedded Program Algorithm are ignored.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed from a “0”
back to a “1”. Attempting to do so may halt the operation and
set DQ5 to “1”, or cause the Data\ Polling algorithm to indicate
the operation was successful. However, a succeeding read will
show that the data is still “0”. Only erase operations can
convert a “0” to a “1”.
Chip Erase Command Sequence
NOTE:
See the appropriate Command Definitions table for program
command sequence.
Chip erase is a six-bus-cycle operation. The chip erase
AS29F010
Rev. 2.3 12/08
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AS29F010
command sequence. The Erase Suspend command is ignored if
written during the chip erase operation or Embedded Program
algorithm. Writing the Erase Suspect command during the
Sector Erase time-out immediately terminates the time-out period
and suspends the erase operation. Addresses are “don’t cares”
when writing the Erase Suspect command.
When the Erase Suspect command is written during a
sector erase operation, the device requires a maximum of 20µs
to suspend the erase operation. However, when the Erase
Suspect command is written during the sector erase time-out,
the device immediately terminates the time-out period and
suspends the erase operation.
After the erase operation has been suspected, the system
can read array data from any sector not selected for erasure.
(The device “erase suspends” all sectors selected for erasure.)
Normal read and write timings and command definitions apply.
Reading at any address within erase-suspended sectors
produces status data on DQ7-DQ0. The system can use DQ7
to determine if a sector is actively erasing or is erase-suspended.
See “Write Operation Status” for information on these status
bits.
After an erase-suspended program operation is complete,
the system can once again read array data within
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector erase
command sequence is initiated by writing two unlock cycles,
followed by a set-up command. Two additional unlock write
cycles are then followed by the addresss of the sector to be
erased, and the sector erase command. The Command
Definitions table shows the address and data requirements for
the sector erase command sequence.
The device does not require the system to preprogram the
memory prior to erase. The Embedded Erase algorithm
automatically programs and verifies the sector for an all zero
data pattern prior to electrical erase. The system is not required
to provide any controls or timings during these operations.
After the command sequence is written, a sector erase
time-out of 50µs begins. During the time-out period, additional
sector addresses and sector erase commands may be written.
Loading the sector erase buffer may be done in any sequence,
and the number of sectors may be from one sector to all sectors.
The time between these additional cycles must be less than
50µs, otherwise the last address and command might not be
accepted, and erasure may begin. It is recommended that
processor interrupts be disabled during this time to ensure all
commands are accepted. The interrupts can be re-enabled after
the last Sector Erase command is written. If the time between
additional sector erase commands can be assumed to be less
than 50µs, the system need not monitor DQ3. Any command
during the time-out period resets the device to reading array
data. The system must rewrite the command sequence and any
additional sector addresses and commands.
The system can monitor DQ3 to determine if the sector
erase timer has timed out. (See the “DQ3: Sector Erase Timer”
section.) The time-out begins from the rising edge of the final
WE\ pulse in the command sequence.
Once the sector erase operation has begun, all other
commands are ignored.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are no longer
latched. The system can determine the status of the erase
operation by using DQ7 or DQ6. Refer to “Write Operation
Status” for information on these status bits.
Figure 2 illustrates the algorithm for the erase operation.
Refer to the Erase/Program Operations tables in the “AC
Characteristics” section for parameters, and to the Sector Erase
Operations Timing diagram for timing waveforms.
FIGURE 2: ERASE OPERATION
Erase Suspend/Erase Resume Commands
The Erase Suspect command allows the system to
interrupt a sector erase operation and then read data from, or
program data to, any sector not selected for erasure. This
command is valid only during the sector erase operation,
including the 50µs time-out period during the sector erase
AS29F010
Rev. 2.3 12/08
NOTE:
1) See the appropriate Command Definitions table for program
command sequence.
2) See “DQ3: Sector Erase Timer” for more information.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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non-suspended sectors. The system can determine the status
of the program operation using the DQ7 or DQ6 status bits, just
as in the standard program operation. See “Write Operation
Status” for more information.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend mode. The
device allows reading autoselect codes even at addresses within
erasing sectors, since the codes are not stored in the memory
array. When the device exits the autoselect mode, the device
reverts to the Erase Suspend mode, and is ready for another
valid operation. See “Autoselect Command Sequence” for more
information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend mode
and continue the sector erase operation. Further writes of the
Resume command are ignored. Another Erase Suspend
command can be written after the device has resumed erasing.
Command Sequence
Cycles
TABLE 4: Command Definitions
1
2,3
Bus Cycles
First
Second
Third
Fourth
Fifth
Sixth
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
4
1
5
1 XXXX
F0
3
4
4
555
555
555
AA
AA
AA
2AA
2AA
2AA
55
55
55
555
555
555
F0
90
90
4
555
AA
2AA
55
555
90
4
6
6
1
555
555
555
XXX
AA
AA
AA
B0
2AA
2AA
2AA
55
55
55
555
555
555
A0
80
80
1
XXX
30
Read
Reset
Reset
6
Manufacturer ID
Device ID
7
Autoselect
8
Sector Protect Verify
Program
Chip Erase
Sector Erase
9
Erase Suspend
Erase Resume
10
RA
RD
X00
X01
(SA)
X02
PA
555
555
1
20
0
1
PD
AA
AA
2AA
2AA
55
55
555
SA
10
30
LEGEND:
X = Don’t Care
RA = Address of the memory location to be read
RD = Data read from location RA during read operation
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE\ or CE\ pulse, whichever happens later
PD = Data to be programmed at location PA. Data latches on the rising edge of WE\ or CE\ pulse, whichever happens first
SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A16-A14 uniquely select any sector.
NOTES:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all command bus cycles are write operations.
4. No unlock or command cycles required when reading array data.
5. The Reset command is required to return to reading array data when device is in the autoselect mode, or if DQ5 goes high (while the device is
providing status data).
6. The device accepts the three-cycle reset command sequence for backward compatibility.
7. The fourth cycle of the autoselect command sequence is a read operation.
8. The data is 00h for an unprotected sector and 01h for a protected sector. See “Autoselect Command Sequence” for more information.
9. The system may read in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase Suspend command is valid
only during a sector erase operation.
10. The Erase Resume command is valid only during the Erase Suspend mode.
AS29F010
Rev. 2.3 12/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
FLASH
Austin Semiconductor, Inc.
WRITE OPERATION STATUS
The device provides several bits to determine the status of
a write operation: DQ3, DQ5, DQ6, and DQ7. Table 5 and the
following subsections describe the functions of these bits. DQ7
and DQ6 each offer a method for determining whether a
program or erase operation is complete or in progress. These
three bits are discussed first.
DQ7: Data\ Polling
The Data\ Polling bit, DQ7, indicates to the host system
whether an Embedded Algorithm is in progress or completed.
Data\ Polling is valid after the rising edge of the final WE\ pulse
in the program or erase command sequence.
During the Embedded Program algorithm, the device
outputs on DQ7 the complement of the datum programmed to
DQ7. When the Embedded Program algorithm is complete, the
device outputs the datum programmed to DQ7. The system
must provide the program address to read valid status
information on DQ7. If a program address falls within a
protected sector, Data\ Polling on DQ7 is active for
approximately 2µs, then the device returns to reading array
data.
During the Embedded Erase algorithm, Data\ Polling
produces a “0” on DQ7. When the Embedded Erase algorithm
is complete, Data\ Polling produces a “1” on DQ7. This is
analogous to the complement/true datum output described for
the Embedded Program algorithm: the erase function changes
all the bits in a sector to “1”; prior to this, the device outputs
the “complement,” or “0”. The system must provide an
address within any of the sectors selected for erasure to read
valid status information on DQ7.
After an erase command sequence is written, if all sectors
selected for erasing are protected, Data\ Polling on DQ7 is
active for approximately 100µs, then the device returns to
reading array data. If not all selected sectors are protected, the
Embedded Erase algorithm erases the unprotected sectors, and
ignores the selected sectors that are protected.
When the system detects DQ7 has changed from the
complement to true data, it can read valid data at DQ7-DQ0 on
the following read cycles. This is because DQ7 may change
asynchronously with DQ0-DQ6 while Output Enable (OE\) is
asserted low. The Data\ Polling Timings (During Embedded
Algorithms) figure in the “AC Characteristics” section
illustrates this.
Table 5 shows the outputs for Data\ Polling on DQ7.
Figure 3 shows the Data\ Polling algorithm.
AS29F010
Bit I may be read at any address, and is valid after the rising
edge of the final WE\ pulse in the command sequence (prior to
the program or erase operation), and during the sector erase
time-out.
During an Embedded Program or Erase algorithm
operation, successive read cycles to any address cause DQ6 to
toggle. (The system may use either OE\ or CE\ to control the
read cycles.) When the operation is complete, DQ6 stops
toggling.
After an erase command sequence is written, if all sectors
FIGURE 3: DATA\ POLLING ALGORITHM
NOTE:
DQ6: Toggle Bit I
Toggle bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete. Toggle
AS29F010
Rev. 2.3 12/08
1) VA = Valid address for programming. During a sector erase operation,
a valid address is an address within any sector selected for erasure. During
chip erase, a valid address is any non-protected sector address.
2) DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change
simultaneously with DQ5.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
10
FLASH
Austin Semiconductor, Inc.
selected for erasing are protected, DQ6 toggles for
approximately 100µs, then returns to reading array data. If not
all selected sectors are protected, the Embedded Erase
algorithm erases the unprotected sectors, and ignores the
selected sectors that are protected.
If a program address falls within a protected sector, DQ6
toggles for approximately 2µs after the program command
sequence is written, then returns to reading array data.
The Write Operation Status table shows the outputs for
Toggle Bit I on DQ6. Refer to Figure 4 for the toggle bit
algorithm, and to the Toggle Bit Timings figure in the “AC
Characteristics” section for the timing diagram.
AS29F010
Under this condition, the device halts the operation, and when
the operation has exceeded the timing limits, DQ5 produces a
“1.”
Under both these conditions, the system must issue the
reset command to return the device to reading array data.
FIGURE 4: TOGGLE BIT ALGORITHM
Reading Toggle Bit DQ6
Refer to Figure 4 for the following discussion. Whenever
the system initially begins reading toggle bit status, it must
read DQ7-DQ0 at least twice in a row to determine whether a
toggle bit is toggling. Typically, a system would note and store
the value of the toggle bit after the first read. After the second
read, the system would compare the new value of the toggle bit
with the first. If the toggle bit is not toggling, the device has
completed the program or erase operation. The system can
read array data on DQ7-DQ0 on the following read cycle.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system also
should note whether the value of DQ5 is high (see the section
on DQ5). If it is, the system should then determine again whether
the toggle bit is toggling, since the toggle bit may have stopped
toggling just as DQ5 went high. If the toggle bit is no longer
toggling, the device has successfully completed the program
or erase operation. If it is still toggling, the device did not
complete the operation successfully, and the system must write
the reset command to return to reading array data.
The remaining scenario is that the system initially
determines that the toggle bit it toggling and DQ5 has not gone
high. The system may continue to monitor the toggle bit and
DQ5 through successive read cycles, determining the status as
described in the previous paragraph. Alternatively, it may
choose to perform other system tasks. In this case, the system
must start at the beginning of the algorithm when it returns to
determine the status of the operation (top of Figure 4).
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under these
conditions DQ5 produces a “1.” This is a failure condition that
indicates the program or erase cycle was not successfully
completed.
The DQ5 failure condition may appear if the system tries to
program a “1” to a location that is previously programmed to
“0.” Only an erase operation can change a “0” back to a “1.”
AS29F010
Rev. 2.3 12/08
NOTE:
1) Read toggle bit twice to determine whether or not it is toggling. See
text.
2) Recheck toggle bit because it may stop toggling as DQ5 changes to
“1”. See text.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
11
FLASH
AS29F010
Austin Semiconductor, Inc.
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not an erase
operation has begun. (The sector erase timer does not apply to
the chip erase command.) If additional sectors are selected for
erasure, the entire time-out also applies after each additional
sector erase command. When the time-out is complete, DQ3
switches from “0” to “1.” The system may ignore DQ3 if the
system can guarantee that the time between additional sector
erase commands will always be less than 50µs. See also the
“Sector Erase Command Sequence” section.
After the sector erase command sequence is written, the
system should read the status on DQ7 (Data\ Polling) or DQ6
(Toggle Bit I) to ensure the device has accepted the command
sequence, and then read DQ3. If DQ3 is “1”, the internally
controlled erase cycle has begun; all further commands are
ignored until the erase operation is complete. If DQ3 is “0”, the
device will accept additional sector erase commands. To
ensure the command has been accepted, the system software
should check the status of DQ3 prior to and following each
subsequent sector erase command. If DQ3 is high on the
second status check, the last command might not have been
accepted. Table 5 shows the outputs for DQ3.
TABLE 5: WRITE OPERATION STATUS
OPERATION
1
2
DQ6
DQ5
DQ7\
Toggle
0
N/A
DQ7
DQ3
Standard
Mode
Embedded Program Algorithm
Embedded Erase Algorithm
0
Toggle
0
1
Erase
Suspend
Mode
Reading within Erase Suspended Sector
1
No toggle
0
N/A
Data
Data
Data
Data
Reading within Non-Erase Suspended Sector
NOTES:
1. DQ7 requires a valid address when reading status information. Refer to the appropriate subsection for further details.
2. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. See “DQ5:
Exceeding Timing Limits” for more information.
ABSOLUTE MAXIMUM RATINGS*
Ambient Temperature with Power Applied............-55°C to +125°C
Voltage with Respect to Ground
VCC1.................................................................-2.0V to +7.0V
A92................................................................-2.0V to +13.0V
All other pins1...............................................-2.0V to +7.0V
Output Short Circuit Current3..................................................200mA
VCC Supply Voltage..................................................+4.50V to +5.50V
Storage Temperature..................................................-65°C to +125°C
FIGURE 5: Maximum Negative
Overshoot Waveform
NOTES:
1. Minimum DC voltage on input or I/O pin is -0.5V. During voltage transitions, input
may overshoot VSS to -2.0V for periods of up to 20ns. See Figure 5. Maximum DC voltage
on input and I/O pins is VCC + 0.5V. During voltage transitions, input and I/O pins may
overshoot VCC + 2.0V for periods up to 20ns. See Figure 6.
2. Minimum DC voltage on A9 pin is -0.5V. During voltage transitions, A9 pins may
overshoot VSS to -2.0V for periods of up to 20ns. See Figure 5. Maximum DC input
voltage on A9 is +12.5V which may overshoot to 14.0V for periods up to 20ns.
3. No more than one output shorted at a time. Duration of the short circuit should not be
greater than one second.
*Stresses greater than those listed under "Absolute Maximum Ratings"
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operation section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
AS29F010
Rev. 2.3 12/08
FIGURE 6: Maximum Positive
Overshoot Waveform
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
12
FLASH
AS29F010
Austin Semiconductor, Inc.
DC CHARACTERISTICS: TTL/NMOS Compatible
PARAMETER
DESCRIPTION
SYM
MIN
TYP
MAX
UNIT
Input Load Current
VIN = VSS to VCC, VCC = VCC Max
ILI
±5.0
µA
A9 Input Load Current
VCC = VCC Max, A9 = 12.5V
ILIT
100
µA
±5.0
µA
VOUT = VSS to VCC, VCC = VCC Max
ILO
1,2
CE\ = VIL, OE\ = VIH
ICC1
12
35
mA
2,3,4
CE\ = VIL, OE\ = VIH
ICC2
30
50
mA
CE\ and OE\ = VIH
ICC3
0.4
5.0
mA
Output Leakage Current
VCC Active Read Current
VCC Active Write Current
VCC Standby Current
Input Low Voltage
VIL
-0.5
0.8
V
Input High Voltage
VIH
2.0
VCC + 0.5
V
10.5
12.5
V
0.45
V
Voltage for Autoselect and Sector
Protect
VCC = 5.0V
VID
Output Low Voltage
IOL = 12 mA, VCC = VCC Min
VOL
Output High Voltage
IOH = -2.5 mA, VCC = VCC Min
VOH
2.4
V
VLKO
3.2
V
Low VCC Lock-out Voltage
DC CHARACTERISTICS: CMOS Compatible
MAX
UNIT
Input Load Current
PARAMETER
VIN = VSS to VCC, VCC = VCC Max
ILI
±5.0
µA
A9 Input Load Current
VCC = VCC Max, A9 = 12.5V
ILIT
50
µA
Output Leakage Current
VOUT = VSS to VCC, VCC = VCC Max
ILO
±5.0
µA
1,2
CE\ = VIL, OE\ = VIH
ICC1
35
mA
2,3,4
VCC Active Current
CE\ = VIL, OE\ = VIH
ICC2
50
mA
VCC Standby Current
CE\ = VCC ± 0.5V, OE\ = VIH
ICC3
1.6
mA
VCC Active Current
DESCRIPTION
SYM
MIN
TYP
Input Low Voltage
VIL
-0.5
0.8
V
Input High Voltage
VIH
0.7 x VCC
VCC + 0.3
V
10.5
12.5
V
0.45
V
Voltage for Autoselect and
Sector Protect
VCC = 5.25V
VID
Output Low Voltage
IOL = 12 mA, VCC = VCC Min
VOL
IOH = -2.5 mA, VCC = VCC Min
VOH1
0.85 VCC
IOH = -100 µA, VCC = VCC Min
VOH2
VCC - 0.4
VLKO
3.2
Output High Voltage
Low VCC Lock-out Voltage
V
V
NOTES:
1.
2.
3.
4.
The ICC current listed is typically less than 2mA/MHz, with OE\ at VIH.
Maximum ICC specifications are tested with VCC = VCC Max
ICC active while Embedded Program or Embedded Erase Algorithm is in progress.
Not 100% tested.
AS29F010
Rev. 2.3 12/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
13
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AS29F010
Austin Semiconductor, Inc.
FIGURE 7: TEST CONDITIONS,
Test Setup
TABLE 6: TEST CONDITIONS,
Test Specifications
CONDITIONS
Output Load
ALL SPEEDS
UNIT
1 TTL Gate
Output Load Capacitance, CL
(including jig capacitance)
50
pF
Input Rise and Fall Times
5
ns
0/3
V
1.5
V
1.5
V
Input Pulse Levels
Input timing measurement
reference levels
Output timing measurement
reference levels
AC CHARACTERISTICS: Read-Only Operations
SYMBOL
JEDEC Std
PARAMETER
1
-50
SPEED OPTIONS
-60
-70
90
-120
-150 UNITS
MIN
50
60
70
90
120
150
ns
MAX
50
60
70
90
120
150
ns
MAX
50
60
70
90
120
150
ns
TEST SETUP
Read Cycle Time
tAVAV
tRC
Address to Output Delay
tAVQV
tACC
Chip Enable to Output Delay
tELQV
tCE
Output Enable to Output Delay
tGLQV
tOE
MAX
25
30
35
40
50
55
ns
1
tEHQZ
tDF
MAX
15
20
20
25
30
35
ns
tGHQZ
tDF
MAX
15
20
20
25
30
35
ns
Chip Enable to Output High Z
1
Output Enable to Output High Z
Output Enable Hold Time
OE\ = VIL
Read
tOEH Toggle and
Data Polling
1
Output Hold Time From Addresses
CE\ or OE\, Whichever Occurs
First
CE\ = VIL
OE\ = VIL
tAXQX
tOH
MIN
0
ns
MIN
10
ns
MIN
0
ns
NOTES:
1. Not 100% tested.
2. See Figure 7 and Table 6 for test specifications.
AS29F010
Rev. 2.3 12/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
14
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AS29F010
Austin Semiconductor, Inc.
FIGURE 8: AC CHARACTERISTICS, Read Operations Timings
AC CHARACTERISTICS: Erase and Program Operations
SYMBOL
JEDEC Std
PARAMETER
1
-50
SPEED OPTIONS
-60
-70
90
-120
-150 UNITS
50
60
150
MIN
tAVAV
tWC
Address Setup Time
MIN
tAVWL
tAS
Address Hold Time
MIN
tWLAX
tAH
40
45
45
45
50
50
ns
Data Setup Time
MIN
tDVWH
tDS
25
30
30
45
50
50
ns
Data Hold Time
MIN
tWHDX
tDH
0
ns
Output Enable Setup Time
MIN
tOES
0
ns
Read Recover Time Before Write
(OE\ High to WE\ Low)
MIN
tGHWL
tGHWL
0
ns
CE\ Setup Time
MIN
tELWL
tCS
0
ns
CE\ Hold Time
MIN
tWHEH
tCH
0
ns
Write Pulse Width
MIN
tWLWH
tWP
Write Pulse Width High
MIN
tWHWL
tWPH
Write Cycle Time
120
0
25
30
35
ns
ns
45
50
50
ns
20
ns
MIN tWHWH1 tWHWH1
14
µs
2
MAX tWHWH2 tWHWH2
15
sec
50
µs
Chip/Sector Erase Operation
VCC Set Up Time
90
2
Byte Programming Operation
1
70
MIN
tVCS
NOTES:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
AS29F010
Rev. 2.3 12/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
15
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Austin Semiconductor, Inc.
AS29F010
FIGURE 9: AC CHARACTERISTICS, Program Operation Timings
NOTES:
PA = program address, PD = program data, DOUT is the true data at the program address.
FIGURE 10: AC CHARACTERISTICS, Chip/Sector Erase
Operation Timings
NOTES:
SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status).
AS29F010
Rev. 2.3 12/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
16
FLASH
Austin Semiconductor, Inc.
AS29F010
FIGURE 11: Data\ Polling Timings (During Embedded Algorithms)
NOTES:
VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle.
FIGURE 12: AC CHARACTERISTICS, Toggle Bit Timings (During
Embedded Algorithms)
NOTES:
VA = Valid address, not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and
array data read cycle.
AS29F010
Rev. 2.3 12/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
17
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AS29F010
Austin Semiconductor, Inc.
AC CHARACTERISTICS: Erase and Program Operations
SYMBOL
JEDEC Std
PARAMETER
1
-50
SPEED OPTIONS
-60
-70
90
-120
-150 UNITS
50
60
150
MIN
tAVAV
tWC
Address Setup Time
MIN
tAVEL
tAS
Address Hold Time
MIN
tELAX
tAH
40
45
45
45
50
50
ns
Data Setup Time
MIN
tDVEH
tDS
25
30
30
45
50
50
ns
Data Hold Time
MIN
tEHDX
tDH
0
ns
tOES
0
ns
Write Cycle Time
1
70
90
120
0
ns
ns
Output Enable Setup Time
MIN
Read Recover Time Before Write
MIN
tGHEL
tGHEL
0
ns
WE\ Setup Time
MIN
tWLEL
tWS
0
ns
WE\ Hold Time
MIN
tEHWH
tWH
0
ns
CE\ Pulse Width
MIN
tELEH
tCP
CE\ Pulse Width High
MIN
tEHEL
tCPH
25
30
35
45
50
50
ns
20
ns
2
MIN tWHWH1 tWHWH1
14
µs
2
MAX tWHWH2 tWHWH2
15
sec
Byte Programming Operation
Chip/Sector Erase Operation
NOTES:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
FIGURE 13: AC CHARACTERISTICS, Alternate CE\ Controlled Write
Operation Timings
NOTES:
1. PA = program address, PD = program data, SA = sector address, DQ7\ = complement of data input, DOUT = array data.
2. Figure indicates the last two bus cycles of the command sequence.
AS29F010
Rev. 2.3 12/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
18
FLASH
AS29F010
Austin Semiconductor, Inc.
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
TYP
PARAMETER
Chip/Sector Erase Time
Chip Programming Time
2
MAX
UNIT
1.0
15
sec
7
300
µs
0.9
6.25
sec
Byte Programming Time
3
1
COMMENTS
Excludes 00h programming prior to erasure
Excludes system-level overhead
4
5
NOTES:
1. Typical program and erase times assume the following conditions: 25°C, 5.0V VCC, 1 million cycles. Additionally, programming typicals
assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 4.5V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster
than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then does the device set DQ5 = 1.
See the section on DQ5 for further information.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 4 for further
information on command definitions.
6. The device has a minimum guaranteed erase cycle endurance of 1 million cycles.
LATCHUP CHARACTERISTIC
PARAMETER
MIN
MAX
-1.0V
VCC + 1.0V
-100mA
+100mA
Input voltage with respect to VSS on I/O pins
VCC Current
NOTES:
Includes all pins except VCC. Test conditions: VCC = 5.0V, one pin at a time.
PIN CAPACITANCE
PARAMETER
CONDITIONS
SYMBOL
MAX
UNIT
VIN = 0
CIN
15
pF
VOUT = 0
COUT
15
pF
VPP = 0
CIN2
15
pF
Input Capacitance
Output Capacitance
Control Pin Capacitance
NOTES:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz
DATA RETENTION
PARAMETER
Minimum Pattern Data Retention Time
AS29F010
Rev. 2.3 12/08
CONDITIONS
150°C
125°C
MIN
10
20
UNIT
Years
Years
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
19
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Austin Semiconductor, Inc.
AS29F010
MECHANICAL DEFINITIONS*
ASI Case (Package Designator CW)
SMD 5962-96690, Case Outline Y
*All measurements are in inches.
AS29F010
Rev. 2.3 12/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
20
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Austin Semiconductor, Inc.
AS29F010
MECHANICAL DEFINITIONS*
ASI Case (Package Designator F)
SMD 5962-96690, Case Outline T
SYMBOL
A
b
C
D
D1
E
E1
E2
e
L
Q
SMD SPECIFICATIONS
MIN
MAX
--0.125
0.015
0.019
0.004
0.007
0.810
0.830
0.745
0.755
0.405
0.415
0.305
0.315
0.050 TYP
0.050 TYP
0.380
0.420
0.022
0.028
*All measurements are in inches.
AS29F010
Rev. 2.3 12/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
21
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Austin Semiconductor, Inc.
AS29F010
MECHANICAL DEFINITIONS*
ASI Case (Package Designator DCG)
SMD 5962-96690, Case Outline U
SYMBOL
A
A1
A2
b
C
C2
D
D1
E
E1
E2
E3
e
eA
L
Q
R
SMD SPECIFICATIONS
MIN
MAX
--0.132
0.095
0.125
0.003
0.007
0.015
0.019
0.004
0.007
0.030 TYP
0.810
0.830
0.750 TYP
0.405
0.415
0.525
0.535
0.305
0.315
0.050 TYP
0.050 TYP
0.436 TYP
0.060 TYP
0.022
0.028
0.007 TYP
*All measurements are in inches.
AS29F010
Rev. 2.3 12/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
22
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Austin Semiconductor, Inc.
AS29F010
MECHANICAL DEFINITIONS*
ASI Case (Package Designator SOJ)
SMD 5962-96690, Case Outline X
*All measurements are in inches.
AS29F010
Rev. 2.3 12/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
23
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Austin Semiconductor, Inc.
AS29F010
ORDERING INFORMATION
EXAMPLE:
EXAMPLE:
EXAMPLE:
EXAMPLE:
AS29F010CW-90/883C
AS29F010F-120/XT
AS29F010DCG-70/Q
AS29F010SOJ-55/XT
Device Number Package Type
AS29F010
CW
AS29F010
CW
AS29F010
CW
AS29F010
CW
AS29F010
CW
AS29F010
CW
AS29F010
F
AS29F010
F
AS29F010
F
AS29F010
F
AS29F010
F
AS29F010
F
AS29F010
DCG
AS29F010
DCG
AS29F010
DCG
AS29F010
DCG
AS29F010
DCG
AS29F010
DCG
AS29F010
SOJ
AS29F010
SOJ
AS29F010
SOJ
AS29F010
SOJ
AS29F010
SOJ
AS29F010
SOJ
*AVAILABLE PROCESSES
XT = Military Temperature Range
IT = Industrial Temperature Range
883C = 883C Processing
Q = QML Processing
Speed ns Process
-50**
/*
-60
/*
-70
/*
-90
/*
-120
/*
-150
/*
-50**
/*
-60
/*
-70
/*
-90
/*
-120
/*
-150
/*
-50**
/*
-60
/*
-70
/*
-90
/*
-120
/*
-150
/*
-50**
/*
-60
/*
-70
/*
-90
/*
-120
/*
-150
/*
-55oC to +125oC
-40°C to +85°C
-55°C to +125°C
-55°C to +125°C
**NOTE: 50ns (-50) option available with IT and XT options only.
AS29F010
Rev. 2.3 12/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
24
FLASH
Austin Semiconductor, Inc.
AS29F010
ASI TO DSCC PART NUMBER
CROSS REFERENCE*
ASI Package Designator CW
ASI Part #
AS29F010CW-60/Q
AS29F010CW-70/Q
AS29F010CW-90/Q
AS29F010CW-120/Q
AS29F010CW-150/Q
SMD Part #
5962-9669005HYA
5962-9669004HYA
5962-9669003HYA
5962-9669002HYA
5962-9669001HYA
ASI Package Designator F
ASI Part #
AS29F010F-60/Q
AS29F010F-70/Q
AS29F010F-90/Q
AS29F010F-120/Q
AS29F010F-150/Q
SMD Part #
5962-9669005HTA
5962-9669004HTA
5962-9669003HTA
5962-9669002HTA
5962-9669001HTA
ASI Package Designator DCG
ASI Part #
AS29F010DCG-60/Q
AS29F010DCG-70/Q
AS29F010DCG-90/Q
AS29F010DCG-120/Q
AS29F010DCG-150/Q
SMD Part #
5962-9669005HUA
5962-9669004HUA
5962-9669003HUA
5962-9669002HUA
5962-9669001HUA
* ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
AS29F010
Rev. 2.3 12/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
25
FLASH
Austin Semiconductor, Inc.
AS29F010
DOCUMENT TITLE
128K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY
REVISION HISTORY
Rev #
2.3
AS29F010
Rev. 2.3 12/08
History
Changed MAX value from 60 to 15
corrections on page 15 &18
Release Date
December 2008
Status
Release
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
26