LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTB143TLT1G S-LDTB143TLT1G • Applications Inverter, Interface, Driver • Features 3 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on / off conditions need to be set for operation, making the device design easy. 1 2 SOT-23 • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −40 V Emitter-base voltage VEBO −5 V Collector current IC −500 mA Collector power dissipation PC 200 mW Parameter Junction temperature Tj 150 C Storage temperature Tstg −55 to +150 C 1 BASE R1 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTB143TLT1G S-LDTB143TLT1G K2 4.7 3000/Tape & Reel LDTB143TLT3G S-LDTB143TLT3G K2 4.7 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Collector-base breakdown voltage BVCBO −50 − − V IC= −50µA Collector-emitter breakdown voltage BVCEO −40 − − V IC= −1mA BVEBO −5 − − V IE= −50µA ICBO − − −0.5 µA VCB= −50V IEBO − − −0.5 µA VEB= −4V VCE(sat) − − −0.3 V IC/IB= −50mA/−2.5mA VCE= −5V, IC= −50mA Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Typ. Max. Unit DC current transfer ratio hFE 100 250 600 − Input resistance R1 3.29 4.7 6.11 kΩ − 200 − MHz Transition frequency ∗ Characteristics of built-in transistor fT ∗ Conditions − VCE= −10V, IE=50mA, f=100MHz Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LDTB143TLT1G ;S-LDTB143TLT1G 1k VCE= −5V DC CURRENT GAIN : hFE 500 200 Ta=100 C 25 C −40 C 100 50 20 10 5 2 1 -0.5m -1m -2m -5m -10m -20m -50m -100m -200m -500m COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collectorcurrent COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) zElectrical characteristic curves -1 lC/lB=20 -500m Ta=100 C 25 C −40 C -200m -100m -50m -20m -10m -5m -2m -1m -0.5m -1m -2m -5m -10m -20m -50m -100m -200m -500m COLLECTOR CURRENT : IC (A) Fig.2Collector-emitter saturation voltage vs. collector current Rev.O 2/3 LESHAN RADIO COMPANY, LTD. LDTB143TLT1G ;S-LDTB143TLT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 A B C D G H J G C D MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0034 0.0140 0.0350 0.0830 0.0177 0.0070 0.0285 0.0401 0.1039 0.0236 DIM B S H K J K L S V MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.35 0.89 2.10 0.45 0.177 0.69 1.02 2.64 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 3/3