Diodes FCX593 Sot89 silicon planar high voltage transistor Datasheet

FCX593
SOT89 Silicon planar high voltage transistor
Complementary part number - FMMT493
C
Device marking - P93
B
E
E
C
C
B
Pinout - top view
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
-120
V
Collector-emitter voltage
VCEO
-100
V
Emitter-base voltage
VEBO
-5
V
ICM
-2
A
Continuous collector current
IC
-1
A
Base current
IB
-200
mA
Ptot
1
W
Tj, Tstg
-65 to +150
°C
Peak pulse current
Power dissipation at Tamb =25°C
Operating and storage temperature range
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FCX593
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Base breakdown voltages
V(BR)CBO
Max.
Unit
Conditions
-120
V
IC = -100A
V(BR)CEO
-100
V
IC = -10mA (*)
V(BR)EBO
-5
V
IE = -100A
ICBO
-100
nA
VCB = -100V
IEBO
-100
nA
VEB = -4V
ICES
-100
nA
VCES = -100V
-0.2
V
IC = -250mA, IB = -25mA(*)
-0.3
V
IC = -250mA, IB = -25mA(*)
VBE(sat)
-1.1
V
IC = -500mA, IB = -50mA(*)
Base-emitter turn-on voltage
VBE(on)
-1
V
IC = -1mA, IB = -5V(*)
Static forward current
transfer ratio
hFE
Cut-off currents
Saturation voltages
VCE(sat)
100
IC = -1mA, VCE = -5V
100
IC = -250mA, VCE = -5V(*)
100
300
IC = -500mA, VCE = -5V(*)
50
Transition frequency
fT
Output capacitance
COBO
IC = -1A, VCE = -5V(*)
50
MHz
5
pF
IC = -50mA, VCE = -10V
f = 100MHz
VCB = -10V, f = 1MHz
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%.
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FCX593
Thermal characteristics
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FCX593
Typical characteristics
0.4
0.4
IA/IB=10
+25 ° C
0.3
VCE(sat) -(V)
VCE(sat) -(V)
0.3
IC/IB=10
IC/IB=50
0.2
0.1
-55 °C
+25 °C
+100 °C
0.2
0.1
0
0
10mA
1mA
100mA
1A
10A
10mA
1mA
h FE - Typical Gain
1A
10A
1A
10A
IC-Collector Current
VCE(sat) v IC
IC-Collector Current
VCE(sat) v IC
400
100mA
VCE=5V
1.0
IC/IB=10
+100 °C
0.8
300
0.6
200
+25 °C
-55 °C
+25 °C
+100 °C
0.4
100
-55 °C
0.2
0
1mA
0
10mA
100mA
1A
1mA
10A
10mA
100mA
IC-Collector Current
VBE(sat) v IC
IC-Collector Current
hFE V IC
10
VCE=5V
VBE(on) - (V)
1.0
1
0.8
0.6
0.1
-55 °C
+25 °C
+100 °C
0.4
DC
1s
100ms
10ms
1ms
100µs
0.01
0.2
0
1mA
10mA
100mA
1A
0.001
0.1V
10A
VBE(on) v IC
Issue 4 - November 2006
© Zetex Semiconductors plc 2006
1V
10V
100V
VCE - Collector Emitter Voltage (V)
IC-Collector Current
Safe Operating Area
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FCX593
Package outline - SOT89
D
A
C
D1
E
H
E1
L
B
e
B1
DIM
e1
Millimeters
Inches
Min
Max
Min
Max
A
1.40
1.60
0.550
0.630
B
0.44
0.56
0.017
B1
0.36
0.48
C
0.35
D
D1
DIM
Millimeters
Inches
Min
Max
Min
Max
E
2.29
2.60
0.090
0.102
0.022
E1
2.13
2.29
0.084
0.090
0.014
0.019
e
1.50 BSC
0.059 BSC
0.44
0.014
0.017
e1
3.00 BSC
0.118 BSC
4.40
4.60
0.173
0.181
H
3.94
4.25
0.155
0.167
1.52
1.83
0.064
0.072
L
0.89
1.20
0.035
0.047
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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FCX593
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© 2006 Published by Zetex Semiconductors plc
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