CMPDM202PH SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM202PH is a high current P-channel enhancement-mode silicon MOSFET, manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current. MARKING CODE: 202C SOT-23F CASE APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment FEATURES: • Low rDS(ON) (0.093Ω MAX @ VGS=2.5V) • High current (ID=2.3A) • Logic level compatibility MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage SYMBOL VDS 20 UNITS V VGS ID 12 V 2.3 A 9.2 A 350 mW Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance IDM PD TJ, Tstg ΘJA -55 to +150 °C 357 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=12V, VDS=0 IDSS BVDSS VGS(th) VDS=20V, VGS=0 VGS=0, ID=250μA MAX 100 UNITS nA 1.0 μA 20 V rDS(ON) VGS=VDS, ID=250μA VGS=5.0V, ID=1.2A rDS(ON) VGS=2.5V, ID=1.2A 0.058 gFS VDS=5.0V, ID=2.3A 15 S Crss VDD=10V, VGS=0, f=1.0MHz VDD=10V, VGS=0, f=1.0MHz 85 pF 800 pF Ciss Coss Qg(tot) Qgs VDD=10V, VGS=0, f=1.0MHz VDD=10V, VGS=5.0V, ID=2.3A VDD=10V, VGS=5.0V, ID=2.3A 0.6 1.4 V 0.042 0.088 Ω 0.093 Ω 75 pF 8.0 12 nC 1.3 2.0 nC 2.3 3.5 nC ton VDD=10V, VGS=5.0V, ID=2.3A VDD=10V, ID=2.3A, RG=10Ω toff VDD=10V, ID=2.3A, RG=10Ω 48 Qgd 25 ns ns R1 (11-December 2012) CMPDM202PH SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-23F CASE - MECHANICAL OUTLINE 2 1 3 PIN CONFIGURATION LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: 202C R1 (11-December 2012) w w w. c e n t r a l s e m i . c o m