Central CMPDM202PH Surface mount p-channel enhancement-mode silicon mosfet Datasheet

CMPDM202PH
SURFACE MOUNT
P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPDM202PH is
a high current P-channel enhancement-mode silicon
MOSFET, manufactured by the P-channel DMOS
process, and is designed for high speed pulsed
amplifier and driver applications. This MOSFET offers
high current, low rDS(ON), low threshold voltage, and
low leakage current.
MARKING CODE: 202C
SOT-23F CASE
APPLICATIONS:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable equipment
FEATURES:
• Low rDS(ON) (0.093Ω MAX @ VGS=2.5V)
• High current (ID=2.3A)
• Logic level compatibility
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
SYMBOL
VDS
20
UNITS
V
VGS
ID
12
V
2.3
A
9.2
A
350
mW
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
IDM
PD
TJ, Tstg
ΘJA
-55 to +150
°C
357
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR
VGS=12V, VDS=0
IDSS
BVDSS
VGS(th)
VDS=20V, VGS=0
VGS=0, ID=250μA
MAX
100
UNITS
nA
1.0
μA
20
V
rDS(ON)
VGS=VDS, ID=250μA
VGS=5.0V, ID=1.2A
rDS(ON)
VGS=2.5V, ID=1.2A
0.058
gFS
VDS=5.0V, ID=2.3A
15
S
Crss
VDD=10V, VGS=0, f=1.0MHz
VDD=10V, VGS=0, f=1.0MHz
85
pF
800
pF
Ciss
Coss
Qg(tot)
Qgs
VDD=10V, VGS=0, f=1.0MHz
VDD=10V, VGS=5.0V, ID=2.3A
VDD=10V, VGS=5.0V, ID=2.3A
0.6
1.4
V
0.042
0.088
Ω
0.093
Ω
75
pF
8.0
12
nC
1.3
2.0
nC
2.3
3.5
nC
ton
VDD=10V, VGS=5.0V, ID=2.3A
VDD=10V, ID=2.3A, RG=10Ω
toff
VDD=10V, ID=2.3A, RG=10Ω
48
Qgd
25
ns
ns
R1 (11-December 2012)
CMPDM202PH
SURFACE MOUNT
P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
SOT-23F CASE - MECHANICAL OUTLINE
2
1
3
PIN CONFIGURATION
LEAD CODE:
1) Gate
2) Source
3) Drain
MARKING CODE: 202C
R1 (11-December 2012)
w w w. c e n t r a l s e m i . c o m
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