Intel E28F320J3C-150 Intel strataflash memory (j3) Datasheet

Intel StrataFlash® Memory (J3)
256-Mbit (x8/x16)
Datasheet
Product Features
■
■
■
Performance
— 110/115/120/150 ns Initial Access Speed
— 125 ns Initial Access Speed (256 Mbit
density only)
— 25 ns Asynchronous Page mode Reads
— 30 ns Asynchronous Page mode Reads
(256Mbit density only)
— 32-Byte Write Buffer
—6.8 µs per byte effective
programming time
Software
— Program and Erase suspend support
— Flash Data Integrator (FDI), Common
Flash Interface (CFI) Compatible
Security
— 128-bit Protection Register
—64-bit Unique Device Identifier
—64-bit User Programmable OTP Cells
— Absolute Protection with VPEN = GND
— Individual Block Locking
— Block Erase/Program Lockout during
Power Transitions
■
■
■
Architecture
— Multi-Level Cell Technology: High
Density at Low Cost
— High-Density Symmetrical 128-Kbyte
Blocks
—256 Mbit (256 Blocks) (0.18µm only)
—128 Mbit (128 Blocks)
—64 Mbit (64 Blocks)
—32 Mbit (32 Blocks)
Quality and Reliability
— Operating Temperature:
-40 °C to +85 °C
— 100K Minimum Erase Cycles per Block
— 0.18 µm ETOX™ VII Process (J3C)
— 0.25 µm ETOX™ VI Process (J3A)
Packaging and Voltage
— 56-Lead TSOP Package
— 64-Ball Intel® Easy BGA Package
— Lead-free packages available
— 48-Ball Intel® VF BGA Package (32 and
64 Mbit) (x16 only)
— VCC = 2.7 V to 3.6 V
— VCCQ = 2.7 V to 3.6 V
Capitalizing on Intel’s 0.25 and 0.18 micron, two-bit-per-cell technology, the Intel StrataFlash® Memory (J3)
device provides 2X the bits in 1X the space, with new features for mainstream performance. Offered in 256Mbit (32-Mbyte), 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, the J3 device brings reliable, two-bitper-cell storage technology to the flash market segment. Benefits include more density in less space, high-speed
interface, lowest cost-per-bit NOR device, support for code and data storage, and easy migration to future
devices.
Using the same NOR-based ETOX™ technology as Intel’s one-bit-per-cell products, the J3 device takes
advantage of over one billion units of flash manufacturing experience since 1987. As a result, J3 components
are ideal for code and data applications where high density and low cost are required. Examples include
networking, telecommunications, digital set top boxes, audio recording, and digital imaging.
By applying FlashFile™ memory family pinouts, J3 memory components allow easy design migrations from
existing Word-Wide FlashFile memory (28F160S3 and 28F320S3), and first generation Intel StrataFlash®
memory (28F640J5 and 28F320J5) devices.
J3 memory components deliver a new generation of forward-compatible software support. By using the
Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take advantage of density
upgrades and optimized write capabilities of future Intel StrataFlash® memory devices. Manufactured on Intel®
0.18 micron ETOX™ VII (J3C) and 0.25 micron ETOX™ VI (J3A) process technology, the J3 memory device
provides the highest levels of quality and reliability.
Notice: This document contains information on new products in production. The specifications are
subject to change without notice. Verify with your local Intel sales office that you have the latest
datasheet before finalizing a design.
Order Number: 290667-021
March 2005
INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY
ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN
INTEL'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS
ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF INTEL PRODUCTS INCLUDING LIABILITY OR WARRANTIES
RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER
INTELLECTUAL PROPERTY RIGHT. Intel products are not intended for use in medical, life saving, or life sustaining applications.
Intel may make changes to specifications and product descriptions at any time, without notice.
Designers must not rely on the absence or characteristics of any features or instructions marked “reserved” or “undefined.” Intel reserves these for
future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them.
The 3 Volt Intel StrataFlash® Memory may contain design defects or errors known as errata which may cause the product to deviate from published
specifications. Current characterized errata are available on request.
Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order.
Copies of documents which have an ordering number and are referenced in this document, or other Intel literature may be obtained by calling 1-800548-4725 or by visiting Intel's website at http://www.intel.com.
Copyright © 2005, Intel Corporation. All rights reserved.
Intel and ETOX are trademarks or registered trademarks of Intel Corporation or its subsidiaries in the United States and other countries.
*Other names and brands may be claimed as the property of others.
2
Datasheet
Contents
Contents
1.0
Introduction....................................................................................................................................7
1.1
1.2
2.0
Functional Overview .....................................................................................................................8
2.1
2.2
3.0
Read Operations.................................................................................................................22
Write Operations .................................................................................................................26
Block Erase, Program, and Lock-Bit Configuration Performance .......................................27
Reset Operation..................................................................................................................29
AC Test Conditions.............................................................................................................29
Capacitance ........................................................................................................................30
Power and Reset Specifications ................................................................................................31
8.1
8.2
8.3
9.0
DC Current Characteristics .................................................................................................19
DC Voltage Characteristics.................................................................................................20
AC Characteristics ......................................................................................................................22
7.1
7.2
7.3
7.4
7.5
7.6
8.0
Absolute Maximum Ratings ................................................................................................18
Operating Conditions ..........................................................................................................18
Electrical Specifications .............................................................................................................19
6.1
6.2
7.0
Easy BGA Ballout (32/64/128/256 Mbit) .............................................................................14
56-Lead TSOP (32/64/128/256 Mbit)..................................................................................15
VF BGA Ballout (32 and 64 Mbit) .......................................................................................15
Signal Descriptions .............................................................................................................16
Maximum Ratings and Operating Conditions...........................................................................18
5.1
5.2
6.0
56-Lead TSOP Package .....................................................................................................11
Easy BGA (J3) Package .....................................................................................................12
VF-BGA (J3) Package ........................................................................................................13
Ballout and Signal Descriptions ................................................................................................14
4.1
4.2
4.3
4.4
5.0
Block Diagram ......................................................................................................................9
Memory Map .......................................................................................................................10
Package Information ...................................................................................................................11
3.1
3.2
3.3
4.0
Nomenclature .......................................................................................................................7
Conventions..........................................................................................................................7
Power-Up/Down Characteristics.........................................................................................31
Power Supply Decoupling...................................................................................................31
Reset Characteristics..........................................................................................................31
Bus Operations ............................................................................................................................32
9.1
Datasheet
Bus Operations Overview ...................................................................................................32
9.1.1 Bus Read Operation ..............................................................................................33
9.1.2 Bus Write Operation ..............................................................................................33
9.1.3 Output Disable .......................................................................................................33
9.1.4 Standby..................................................................................................................34
9.1.5 Reset/Power-Down ................................................................................................34
3
Contents
9.2
Device Commands ............................................................................................................. 35
10.0 Read Operations.......................................................................................................................... 37
10.1
10.2
10.3
Read Array.......................................................................................................................... 37
10.1.1 Asynchronous Page Mode Read ........................................................................... 37
10.1.2 Enhanced Configuration Register (ECR)............................................................... 38
Read Identifier Codes ......................................................................................................... 39
10.2.1 Read Status Register............................................................................................. 39
Read Query/CFI.................................................................................................................. 41
11.0 Programming Operations ........................................................................................................... 42
11.1
11.2
11.3
11.4
Byte/Word Program ............................................................................................................ 42
Write to Buffer..................................................................................................................... 42
Program Suspend............................................................................................................... 43
Program Resume................................................................................................................ 43
12.0 Erase Operations......................................................................................................................... 44
12.1
12.2
12.3
Block Erase......................................................................................................................... 44
Block Erase Suspend ......................................................................................................... 44
Erase Resume .................................................................................................................... 45
13.0 Security Modes ............................................................................................................................ 46
13.1
13.2
13.3
13.4
Set Block Lock-Bit............................................................................................................... 46
Clear Block Lock-Bits.......................................................................................................... 46
Protection Register Program .............................................................................................. 47
13.3.1 Reading the Protection Register............................................................................ 47
13.3.2 Programming the Protection Register.................................................................... 47
13.3.3 Locking the Protection Register............................................................................. 47
Array Protection .................................................................................................................. 49
14.0 Special Modes.............................................................................................................................. 50
14.1
14.2
Set Read Configuration Register Command ...................................................................... 50
Status (STS) ....................................................................................................................... 50
Appendix A Common Flash Interface.................................................................................................52
Appendix B Flow Charts ......................................................................................................................59
Appendix C Design Considerations ...................................................................................................68
Appendix D Additional Information ....................................................................................................70
Appendix E Ordering Information.......................................................................................................71
4
Datasheet
Contents
Revision History
Date of
Revision
Version
07/07/99
-001
Original Version
08/03/99
-002
A0–A2 indicated on block diagram
09/07/99
-003
Changed Minimum Block Erase time,IOL, IOH, Page Mode and Byte Mode
currents. Modified RP# on AC Waveform for Write Operations
Description
Changed Block Erase time and tAVWH
Removed all references to 5 V I/O operation
Corrected Ordering Information, Valid Combinations entries
12/16/99
-004
Changed Min program time to 211 µs
Added DU to Lead Descriptions table
Changed Chip Scale Package to Ball Grid Array Package
Changed default read mode to page mode
Removed erase queuing from Figure 10, Block Erase Flowchart
Added Program Max time
Added Erase Max time
Added Max page mode read current
Moved tables to correspond with sections
Fixed typographical errors in ordering information and DC parameter table
Removed VCCQ1 setting and changed VCCQ2/3 to VCCQ1/2
03/16/00
-005
Added recommended resister value for STS pin
Change operation temperature range
Removed note that rp# could go to 14 V
Removed VOL of 0.45 V; Removed VOH of 2.4 V
Updated ICCR Typ values
Added Max lock-bit program and lock times
Added note on max measurements
Updated cover sheet statement of 700 million units to one billion
06/26/00
-006
Corrected Table 10 to show correct maximum program times
Corrected error in Max block program time in section 6.7
Corrected typical erase time in section 6.7
Updated cover page to reflect 100K minimum erase cycles
Updated cover page to reflect 110 ns 32M read speed
Removed Set Read Configuration command from Table 4
Updated Table 8 to reflect reserved bits are 1-7; not 2-7
Updated Table 16 bit 2 definition from R to PSS
2/15/01
-007
Changed VPENLK Max voltage from 0.8 V to 2.0 V, Section 6.4, DC
Characteristics
Updated 32Mbit Read Parameters R1, R2 and R3 to reflect 110ns, Section 6.5,
AC Characteristics–Read-Only Operations (1,2)
Updated write parameter W13 (tWHRL) from 90 ns to 500 ns, Section 6.6, AC
Characteristics–Write Operations
Updated Max. Program Suspend Latency W16 (tWHRH1) from 30 to 75 µs,
Section 6.7, Block Erase, Program, and Lock-Bit Configuration Performance
(1,2,3)
04/13/01
Datasheet
-008
Revised Section 7.0, Ordering Information
5
Contents
Date of
Revision
Version
Description
Added Figure 4, 3 Volt Intel StrataFlash® Memory VF BGA Package (32 Mbit)
Added Figure 5, 3 Volt Intel StrataFlash® Memory VF BGA Mechanical
Specifications
Updated Operating Temperature Range to Extended (Section 6.1 and Table 22)
07/27/01
-009
Reduced tEHQZ to 35 ns. Reduced tWHEH to 0 ns
Added parameter values for –40 °C operation to Lock-Bit and Suspend Latency
Updated VLKO and VPENLK to 2.2 V
Removed Note #4, Section 6.4 and Section 6.6
Minor text edits
Added notes under lead descriptions for VF BGA Package
Removed 3.0 V - 3.6 V Vcc, and Vccq columns under AC Characteristics
10/31/01
-010
Removed byte mode read current row un DC characteristics
Added ordering information for VF BGA Package
Minor text edits
Changed datasheet to reflect the best known methods
6
Updated max value for Clear Block Lock-Bits time
03/21/02
-011
12/12/02
-012
Added nomenclature for J3C (0.18 µm) devices.
01/24/03
-013
Added 115 ns access speed 64 Mb J3C device. Added 120 ns access speed 128
Mb J3C device. Added “TE” package designator for J3C TSOP package.
12/09/03
-014
Revised Asynchronous Page Read description. Revised Write-to-Buffer flow
chart. Updated timing waveforms. Added 256-Mbit J3C pinout.
1/3/04
-015
Added 256Mbit device timings, device ID, and CFI information. Also corrected
VLKO specification.
Minor text edits
1/23/04
-016
Corrected memory block count from 257 to 255.
1/23/04
-016
Memory block count fix.
5/19/04
-018
Restructured the datasheet layout.
7/7/04
-019
Added lead-free part numbers and 8-word page information.
11/23/04
-020
Added Note to DC Voltage Characteristics table; “Speed Bin” to Read Operations
table; Corrected format for AC Waveform for Reset Operation figure; Corrected
“R” and “8W” headings in Enhanced Configuration Register table because they
were transposed; Added 802 and 803 to ordering information and corrected 56Lead TSOP combination number.
3/24/05
-021
Corrected ordering information.
Datasheet
256-Mbit J3 (x8/x16)
1.0
Introduction
This document describes the Intel StrataFlash® Memory (J3) device. It includes a description of
device features, operations, and specifications.
1.1
Nomenclature
AMIN:
AMAX:
Block:
Clear:
CUI:
MLC:
OTP:
PLR:
PR:
PRD
Program:
RFU:
Set:
SR:
SRD:
VPEN:
VPEN:
WSM:
ECR:
XSR:
1.2
Conventions
0x:
0b:
k (noun):
M (noun):
Nibble
Byte:
Word:
Kword:
Kb:
KB:
Mb:
MB:
Brackets:
Datasheet
AMIN = A0 for x8
AMIN = A1 for x16
32 Mbit
AMAX = A21
64 Mbit
AMAX = A22
128 Mbit
AMAX = A23
256 Mbit
AMAX = A24
A group of flash cells that share common erase circuitry and erase simultaneously
Indicates a logic zero (0)
Command User Interface
Multi-Level Cell
One Time Programmable
Protection Lock Register
Protection Register
Protection Register Data
To write data to the flash array
Reserved for Future Use
Indicates a logic one (1)
Status Register
Status Register Data
Refers to a signal or package connection name
Refers to timing or voltage levels
Write State Machine
Extended Configuration Register
eXtended Status Register
Hexadecimal prefix
Binary prefix
1,000
1,000,000
4 bits
8 bits
16 bits
1,024 words
1,024 bits
1,024 bytes
1,048,576 bits
1,048,576 bytes
Square brackets ([]) will be used to designate group membership or to define a
group of signals with similar function (i.e., A[21:1], SR[4,1] and D[15:0]).
7
256-Mbit J3 (x8/x16)
2.0
Functional Overview
The Intel StrataFlash® memory family contains high-density memories organized as 32 Mbytes or
16Mwords (256-Mbit, available on the 0.18µm lithography process only), 16 Mbytes or 8 Mwords
(128-Mbit), 8 Mbytes or 4 Mwords (64-Mbit), and 4 Mbytes or 2 Mwords (32-Mbit). These
devices can be accessed as 8- or 16-bit words. The 128-Mbit device is organized as one-hundredtwenty-eight 128-Kbyte (131,072 bytes) erase blocks. The 64-Mbit device is organized as sixtyfour 128-Kbyte erase blocks while the 32-Mbit device contains thirty-two 128-Kbyte erase blocks.
A 128-bit Protection Register has multiple uses, including unique flash device identification.
The device’s optimized architecture and interface dramatically increases read performance by
supporting page-mode reads. This read mode is ideal for non-clock memory systems.
A Common Flash Interface (CFI) permits software algorithms to be used for entire families of
devices. This allows device-independent, JEDEC ID-independent, and forward- and backwardcompatible software support for the specified flash device families. Flash vendors can standardize
their existing interfaces for long-term compatibility.
Scalable Command Set (SCS) allows a single, simple software driver in all host systems to work
with all SCS-compliant flash memory devices, independent of system-level packaging (e.g.,
memory card, SIMM, or direct-to-board placement). Additionally, SCS provides the highest
system/device data transfer rates and minimizes device and system-level implementation costs.
A Command User Interface (CUI) serves as the interface between the system processor and
internal operation of the device. A valid command sequence written to the CUI initiates device
automation. An internal Write State Machine (WSM) automatically executes the algorithms and
timings necessary for block erase, program, and lock-bit configuration operations.
A block erase operation erases one of the device’s 128-Kbyte blocks typically within one second—
independent of other blocks. Each block can be independently erased 100,000 times. Block erase
suspend mode allows system software to suspend block erase to read or program data from any
other block. Similarly, program suspend allows system software to suspend programming (byte/
word program and write-to-buffer operations) to read data or execute code from any other block
that is not being suspended.
Each device incorporates a Write Buffer of 32 bytes (16 words) to allow optimum programming
performance. By using the Write Buffer, data is programmed in buffer increments. This feature can
improve system program performance more than 20 times over non-Write Buffer writes.
Blocks are selectively and individually lockable in-system.Individual block locking uses block
lock-bits to lock and unlock blocks. Block lock-bits gate block erase and program operations.
Lock-bit configuration operations set and clear lock-bits (Set Block Lock-Bit and Clear Block
Lock-Bits commands).
The Status Register indicates when the WSM’s block erase, program, or lock-bit configuration
operation is finished.
The STS (STATUS) output gives an additional indicator of WSM activity by providing both a
hardware signal of status (versus software polling) and status masking (interrupt masking for
background block erase, for example). Status indication using STS minimizes both CPU overhead
and system power consumption. When configured in level mode (default mode), it acts as a RY/
BY# signal. When low, STS indicates that the WSM is performing a block erase, program, or lockbit configuration. STS-high indicates that the WSM is ready for a new command, block erase is
8
Datasheet
256-Mbit J3 (x8/x16)
suspended (and programming is inactive), program is suspended, or the device is in reset/powerdown mode. Additionally, the configuration command allows the STS signal to be configured to
pulse on completion of programming and/or block erases.
Three CE signals are used to enable and disable the device. A unique CE logic design (see
Table 13, “Chip Enable Truth Table” on page 33) reduces decoder logic typically required for
multi-chip designs. External logic is not required when designing a single chip, a dual chip, or a 4chip miniature card or SIMM module.
The BYTE# signal allows either x8 or x16 read/writes to the device. BYTE#-low selects 8-bit
mode; address A0 selects between the low byte and high byte. BYTE#-high enables 16-bit
operation; address A1 becomes the lowest order address and address A0 is not used (don’t care). A
device block diagram is shown in Figure 4 on page 14.
When the device is disabled (see Table 13 on page 33), with CEx at VIH and RP# at VIH, the
standby mode is enabled. When RP# is at VIL, a further power-down mode is enabled which
minimizes power consumption and provides write protection during reset. A reset time (tPHQV) is
required from RP# going high until data outputs are valid. Likewise, the device has a wake time
(tPHWL) from RP#-high until writes to the CUI are recognized. With RP# at VIL, the WSM is reset
and the Status Register is cleared.
2.1
Block Diagram
Figure 1. 3 Volt Intel StrataFlash® Memory Block Diagram
D[15:0]
Output
Buffer
VCCQ
Input Buffer
A[2:0]
A[MAX:MIN]
Status
Register
Command
User
Interface
CE
Logic
CE0
CE1
CE2
WE#
OE#
RP#
Multiplexer
Data
Comparator
Y-Decoder
Y-Gating
X-Decoder
32-Mbit: Thirty-two
64-Mbit: Sixty-four
128-Mbit: One-hundred
twenty-eight
Input Buffer
Address
Latch
Write Buffer
Identifier
Register
VCC
BYTE#
I/O Logic
Data
Register
Output
Latch/Multiplexer
Query
STS
Write State
Machine
Program/Erase
Voltage Switch
VPEN
VCC
GND
Address
Counter
Datasheet
128-Kbyte Blocks
9
256-Mbit J3 (x8/x16)
2.2
Memory Map
Figure 2. Intel StrataFlash® Memory (J3) Memory Map
A[24-0]: 256 Mbit
A [23-0]:128 Mbit
A [22-0]: 64 Mbit
A [21-0]: 32 Mbit
A[24-1]: 256 Mbit
A [23-1]: 128 Mbit
A [22-1]: 64 Mbit
A [21-1]: 32 Mbit
1FFFFFF
FFFFFF
128-Kbyte Block
1FE0000
128-Kbyte Block
7FFFFF
127
63
64-Kword Block
63
64-Kword Block
31
64-Kword Block
1
64-Kword Block
0
128-Kbyte Block
1F0000
003FFFF
01FFFF
128-Kbyte Block
1
1 28-Mbit
1FFFFF
31
64-Mbit
3F0000
03E0000
010000
00FFFF
128-Kbyte Block
0
0000000
000000
Byte-Wide (x8) Mode
10
127
3FFFFF
128-Kbyte Block
07E0000
0020000
001FFFF
64-Kword Block
7F0000
07FFFFF
03FFFFF
255
256-Mbit
0FE0000
64-Kword Block
FF0000
32-Mbit
0FFFFFF
255
Word Wide (x16) Mode
Datasheet
256-Mbit J3 (x8/x16)
3.0
Package Information
3.1
56-Lead TSOP Package
Figure 3. 56-Lead TSOP Package Drawing and Specifications
Z
A2
See Note 2
See Notes 1 and 3
Pin 1
e
See Detail B
E
Y
D1
A1
D
Seating
Plane
See Detail A
A
Detail A
Detail B
C
0
b
L
Table 1.
56-Lead TSOP Dimension Table
Millimeters
Sym
Min
Nom
Max
Inches
Notes
Min
Nom
Notes
Package Height
A
Standoff
A1
Package Body Thickness
A2
0.965
0.995
1.025
0.038
0.039
0.040
Lead Width
b
0.100
0.150
0.200
0.004
0.006
0.008
Lead Thickness
c
0.100
0.150
0.200
0.004
0.006
0.008
Package Body Length
D1
18.200
18.400
18.600
4
0.717
0.724
0.732
4
Package Body Width
E
13.800
14.000
14.200
4
0.543
0.551
0.559
4
Lead Pitch
e
Terminal Dimension
D
19.800
20.00
20.200
0.780
0.787
0.795
Lead Tip Length
L
0.500
0.600
0.700
0.020
0.024
0.028
Lead Count
N
Lead Tip Angle
∅
Seating Plane Coplanarity
Y
Lead to Package Offset
Z
Datasheet
1.200
Max
0.047
0.050
0.002
0.500
0.0197
56
0°
3°
0.150
0.250
56
5°
0°
3°
0.006
0.010
0.100
0.350
5°
0.004
0.014
11
256-Mbit J3 (x8/x16)
3.2
Easy BGA (J3) Package
Figure 4. Intel StrataFlash® Memory (J3) Easy BGA Mechanical Specifications
Ball A1
Corner
Ball A1
Corner
D
1
2
3
4
S1
5
6
7
8
8
A
A
B
B
C
C
D
D
E
E
7
6
5
4
3
2
1
S2
b
E
F
F
G
G
H
H
e
Top View - Ball side down
Bottom View - Ball Side Up
A1
A2
A
Seating
Y
Plane
Note: Drawing not to scale
Table 2.
Easy BGA Package Dimensions
Millimeters
Symbol
Package Height
A
Ball Height
A1
Package Body Thickness
A2
Ball (Lead) Width
b
Min
Nom
Max
Inches
Notes
Min
Nom
1.200
0.0472
0.250
0.0098
0.780
0.330
Max
0.430
0.0307
0.530
0.0130
0.0169
0.0209
Package Body Width (32 Mb, 64 Mb, 128 Mb, 256 Mb)
D
9.900
10.000
10.100
1
0.3898
0.3937
0.3976
Package Body Length (32 Mb, 64 Mb, 128 Mb)
E
12.900
13.000
13.100
1
0.5079
0.5118
0.5157
Package Body Length (256 Mb)
E
14.900
15.000
15.100
1
0.5866
0.5906
0.5945
Pitch
[e]
1.000
Ball (Lead) Count
N
64
Seating Plane Coplanarity
Y
Corner to Ball A1 Distance Along D (32/64/128/256 Mb)
S1
1.400
1.500
1.600
1
0.0551
0.0591
0.0630
Corner to Ball A1 Distance Along E (32/64/128 Mb)
S2
2.900
3.000
3.100
1
0.1142
0.1181
0.1220
Corner to Ball A1 Distance Along E (256 Mb)
S2
3.900
4.000
4.100
1
0.1535
0.1575
0.1614
0.0394
64
0.100
0.0039
NOTES:
1. For Daisy Chain Evaluation Unit information refer to the Intel Flash Memory Packaging Technology Web page at;
www.intel.com/design/packtech/index.htm
2. For Packaging Shipping Media information see www.intel.com/design/packtech/index.htm
12
Datasheet
256-Mbit J3 (x8/x16)
3.3
VF-BGA (J3) Package
Figure 5. Intel StrataFlash® Memory (J3) VF BGA Mechanical Specifications
B a ll A 1
C o rn e r
B all A1
C o rn e r
D
S1
S2
1
E
2
3
4
5
6
7
8
8
A
A
B
B
C
C
D
D
E
E
F
F
7
6
5
4
3
2
1
e
b
T o p V ie w - B u m p S id e D o w n
B o tt o m V ie w - B a ll S id e U p
A1
A2
A
S e a t in g
P la n e
Y
S id e V ie w
N o te : D r a w in g n o t t o s ca le
D im e n s io n s T a b le
M illim e te rs
In ch es
Sym b ol
M in
Nom
M a x N o te s
M in
Pa c k a g e H e ig h t
A
1.000
0 .1 5 0
0 .0 0 5 9
Ba ll H e ig h t
A1
Pa c k a g e B o d y T h ic k n e s s
A2
0 .6 6 5
Ba ll (L e a d ) W id th
b
0 .3 2 5
0 .3 7 5
0.425
0 .0 1 2 8
D
7 .1 8 6
7 .2 8 6
7.386
1
0 .2 8 2 9
Pa c k a g e B o d y L e n g t h
E
1 0 .7 5 0
10.850
1 0 .9 5 0
1
0 .4 2 3 2
Pitc h
[e]
0 .7 5 0
Ba ll (L e a d ) C o u n t
N
48
Se a tin g P la n e C o p la n a r ity
Y
0.100
Co r n e r to B a ll A 1 D is ta n c e A lo n g D
S1
0 .9 1 8
1 .0 1 8
1.118
1
0 .0 3 6 1
Co r n e r to B a ll A 1 D is ta n c e A lo n g E
S2
3 .4 5 0
3 .5 5 0
3.650
1
0 .1 3 5 8
N o te : ( 1 ) P a c k a g e d im e n s io n s a re f o r r e f e re n c e o n ly . T h e s e d im e n s io n s a re e s t im a te s b a s e d o n d ie s iz e ,
a n d a r e su bj e c t t o c h a ng e .
N om
0 .0 2 6 2
0 .0 1 4 8
0 .2 8 6 8
0 .4 2 7 2
0 .0 2 9 5
48
0 .0 4 0 1
0 .1 3 9 8
M ax
0 .0 3 9 4
0 .0 1 6 7
0 .2 9 0 8
0 .4 3 1 1
0 .0 0 3 9
0 .0 4 4 0
0 .1 4 3 7
NOTES:
1. For Daisy Chain Evaluation Unit information refer to the Intel Flash Memory Packaging Technology Web
page at; www.intel.com/design/packtech/index.htm
2. For Packaging Shipping Media information refer to the Intel Flash Memory Packaging Technology Web page
at; www.intel.com/design/packtech/index.htm
Datasheet
13
256-Mbit J3 (x8/x16)
4.0
Ballout and Signal Descriptions
Intel StrataFlash® memory is available in three package types. Each density of the J3C is supported
on both 64-ball Easy BGA and 56-lead Thin Small Outline Package (TSOP) packages. A 48-ball
VF BGA package is available on 32 and 64 Mbit devices. Figure 6, Figure 7, and Figure 8 show the
pinouts.
4.1
Easy BGA Ballout (32/64/128/256 Mbit)
Figure 6. Intel StrataFlash® Memory Easy BGA Ballout (32/64/128/256 Mbit)
3
4
5
6
7
8
1
2
A1
A6
A8 VPEN A13 VCC A18 A22
A2
VSS
A9 CEO# A14 RFU A19 CE1#
A3
A7
A10 A12 A15 RFU A20 A21
A4
A5
A11 RP# RFU RFU A16 A17
D8
D1
D9
8
7
6
5
4
3
2
1
A22 A18 VCC A13 VPEN A8
A6
A1
CE1# A19 RFU A14 CEO# A9
VSS
A2
A21 A20 RFU A15 A12 A10
A7
A3
A17 A16 RFU RFU RP# A11
A5
A4
STS D15 RFU D4
D1
D8
A
A
B
B
C
C
D
D
E
E
D3
D4
RFU D15 STS
D3
D9
F
F
BYTE# D0
D10 D11 D12 RFU RFU OE#
OE# RFU RFU D12 D11 D10
D0 BYTE#
WE# D14
A0
G
G
A23
128M
A0
D2 VCCQ D5
D6
D14 WE#
D6
D5 VCCQ D2
A23
128M
H
H
CE2# RFU VCC VSS D13 VSS
Easy BGA
Top View- Ball side down
D7
A24
256M
A24 D7
256M
VSS D13 VSS VCC RFU CE2#
Easy BGA
Bottom View- Ball side up
NOTES:
1. Address A22 is only valid on 64-Mbit densities and above, otherwise, it is a no connect (NC).
2. Address A23 is only valid on 128-Mbit densities and above, otherwise, it is a no connect (NC).
3. Address A24 is only valid on 256-Mbit densities and above, otherwise, it is a no connect (NC).
14
Datasheet
256-Mbit J3 (x8/x16)
4.2
56-Lead TSOP (32/64/128/256 Mbit)
Figure 7. Intel StrataFlash® Memory 56-Lead TSOP (32/64/128/256 Mbit)
3 Volt Intel
StrataFlash
Memory
28F160S3
NC
CE1
NC
A20
A19
A18
A17
A16
VCC
A15
A14
A13
A12
CE0
VPP
RP#
A11
A10
A9
A8
GND
A7
A6
A5
A4
A3
A2
A1
28F320J5
NC
CE1
A21
A20
A19
A18
A17
A16
VCC(4)
A15
A14
A13
A12
CE0
VPEN
RP#
A11
A10
A9
A8
GND
A7
A6
A5
A4
A3
A2
A1
3 Volt Intel
StrataFlash
Memory
32/64/128M
A22(1)
CE1
A21
A20
A19
A18
A17
A16
VCC
A15
A14
A13
A12
CE0
VPEN
RP#
A11
A10
A9
A8
GND
A7
A6
A5
A4
A3
A2
A1
32/64/128M
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
A24(3)
WE#
OE#
STS
DQ15
DQ7
DQ14
DQ6
GND
DQ13
DQ5
DQ12
DQ4
VCCQ
GND
DQ11
DQ3
DQ10
DQ2
VCC
DQ9
DQ1
DQ8
DQ0
A0
BYTE#
A23(2)
CE2
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
3 Volt Intel
StrataFlash® Memory
56-Lead TSOP
Standard Pinout
14 mm x 20 mm
Top View
28F320J5
NC
WE#
OE#
STS
DQ15
DQ7
DQ14
DQ6
GND
DQ13
DQ5
DQ12
DQ4
VCCQ
GND
DQ11
DQ3
DQ10
DQ2
VCC(4)
DQ9
DQ1
DQ8
DQ0
A0
BYTE#
NC
CE2
28F160S3
WP#
WE#
OE#
STS
DQ15
DQ7
DQ14
DQ6
GND
DQ13
DQ5
DQ12
DQ4
VCC
GND
DQ11
DQ3
DQ10
DQ2
VCC
DQ9
DQ1
DQ8
DQ0
A0
BYTE#
NC
NC
Highlights pinout changes
NOTES:
1. A22 exists on 64-, 128- and 256-Mbit densities. On 32-Mbit densities this signal is a no-connect (NC).
2. A23 exists on 128-Mbit densities. On 32- and 64-Mbit densities this signal is a no-connect (NC).
3. A24 exists on 256-Mbit densities. On 32-, 64- and 128-Mbit densities this signal is a no-connect (NC).
4. VCC = 5 V ± 10% for the 28F640J5/28F320J5.
4.3
VF BGA Ballout (32 and 64 Mbit)
Figure 8. Intel StrataFlash® Memory VF BGA Ballout (32 and 64 Mbit)
1
2
3
4
5
6
7
8
8
7
6
5
4
3
2
1
A14
A12
A9
VPEN
VCC
A20
A8
A5
A5
A8
A20
VCC
VPEN
A9
A12
A14
A15
A11
WE#
RP#
A19
A18
A6
A3
A3
A6
A18
A19
RP#
WE#
A11
A15
A16
A13
A10
A22
A21
A7
A4
A2
A2
A4
A7
A21
A22
A10
A13
A16
A17
D14
D5
D11
D2
D8
CE#
A1
A1
CE#
D8
D2
D11
D5
D14
A17
D6
D12
D3
D9
D0
VSS
VSS
D0
D9
D3
D12
D6
D15
VCCQ
D13
D4
VCC
D10
D1
OE#
OE#
D1
D10
VCC
D4
D13
D7
VSS
A
A
B
B
C
C
D
D
E
E
VCCQ D15
F
F
VSS
D7
VFBGA6x8
TopView- Ball SideDown
VFBGA6x8
BottomView- Ball SideUp
NOTES:
1. CE# is equivalent to CE0, and CE1 and CE2 are internally grounded.
2. A22 exists on the 64 Mb density only. On the 32-Mbit density, this signal is a no-connect (NC).
3. STS not supported in this package.
4. x8 not supported in this package.
Datasheet
15
256-Mbit J3 (x8/x16)
4.4
Signal Descriptions
Table 3 describes active signals used.
Table 3.
Signal Descriptions (Sheet 1 of 2)
Symbol
Type
Name and Function
A0
Input
BYTE-SELECT ADDRESS: Selects between high and low byte when the device is in x8 mode.
This address is latched during a x8 program cycle. Not used in x16 mode (i.e., the A0 input buffer
is turned off when BYTE# is high).
A[MAX:1]
Input
ADDRESS INPUTS: Inputs for addresses during read and program operations. Addresses are
internally latched during a program cycle.
32-Mbit: A[21:0]
64-Mbit: A[22:0]
128-Mbit: A[23:0]
256-Mbit: A[24:0]
D[7:0]
Input/Output
LOW-BYTE DATA BUS: Inputs data during buffer writes and programming, and inputs
commands during CUI writes. Outputs array, CFI, identifier, or status data in the appropriate read
mode. Data is internally latched during write operations.
D[15:8]
Input/Output
HIGH-BYTE DATA BUS: Inputs data during x16 buffer writes and programming operations.
Outputs array, CFI, or identifier data in the appropriate read mode; not used for Status Register
reads. Data is internally latched during write operations in x16 mode. D[15-8] float in x8 mode
CHIP ENABLES: Activates the device’s control logic, input buffers, decoders, and sense
amplifiers. When the device is de-selected (see Table 13 on page 33), power reduces to standby
levels.
CE0,
CE1,
CE2
Input
RP#
Input
RESET/ POWER-DOWN: RP#-low resets internal automation and puts the device in powerdown mode. RP#-high enables normal operation. Exit from reset sets the device to read array
mode. When driven low, RP# inhibits write operations which provides data protection during
power transitions.
OE#
Input
OUTPUT ENABLE: Activates the device’s outputs through the data buffers during a read cycle.
OE# is active low.
WE#
Input
WRITE ENABLE: Controls writes to the CUI, the Write Buffer, and array blocks. WE# is active
low. Addresses and data are latched on the rising edge of WE#.
STS
Open Drain
Output
STATUS: Indicates the status of the internal state machine. When configured in level mode
(default), it acts as a RY/BY# signal. When configured in one of its pulse modes, it can pulse to
indicate program and/or erase completion. For alternate configurations of the STATUS signal,
see the Configurations command. STS is to be tied to VCCQ with a pull-up resistor.
BYTE#
Input
BYTE ENABLE: BYTE#-low places the device in x8 mode; data is input or output on D[7:0],
while D[15:8] is placed in High-Z. Address A0 selects between the high and low byte. BYTE#high places the device in x16 mode, and turns off the A0 input buffer. Address A1 becomes the
lowest-order address bit.
VPEN
Input
All timing specifications are the same for these three signals. Device selection occurs with the
first edge of CE0, CE1, or CE2 that enables the device. Device deselection occurs with the first
edge of CE0, CE1, or CE2 that disables the device (see Table 13 on page 33).
ERASE / PROGRAM / BLOCK LOCK ENABLE: For erasing array blocks, programming data, or
configuring lock-bits.
With VPEN ≤ VPENLK, memory contents cannot be altered.
16
VCC
Power
CORE POWER SUPPLY: Core (logic) source voltage. Writes to the flash array are inhibited
when VCC ≤ VLKO. Device operation at invalid Vcc voltages should not be attempted.
VCCQ
Power
I/O POWER SUPPLY: I/O Output-driver source voltage. This ball can be tied to VCC.
Datasheet
256-Mbit J3 (x8/x16)
Table 3.
Signal Descriptions (Sheet 2 of 2)
Symbol
Type
GND
Supply
NC
—
NO CONNECT: Lead is not internally connected; it may be driven or floated.
RFU
—
RESERVED for FUTURE USE: Balls designated as RFU are reserved by Intel for future device
functionality and enhancement.
Datasheet
Name and Function
GROUND: Do not float any ground signals.
17
256-Mbit J3 (x8/x16)
5.0
Maximum Ratings and Operating Conditions
5.1
Absolute Maximum Ratings
This datasheet contains information on new products in production. The specifications are subject
to change without notice. Verify with your local Intel Sales office that you have the latest datasheet
before finalizing a design. Absolute maximum ratings are shown in Table 4.
Warning:
Stressing the device beyond the “Absolute Maximum Ratings” may cause permanent damage.
These are stress ratings only. Operation beyond the “Operating Conditions” is not recommended
and extended exposure beyond the “Operating Conditions” may affect device reliability.
Table 4.
Absolute Maximum Ratings
Parameter
Maximum Rating
Temperature under Bias Extended
–40 °C to +85 °C
Storage Temperature
–65 °C to +125 °C
Voltage On Any signal
–2.0 V to +5.0 V(1)
Output Short Circuit Current
100 mA(2)
NOTES:
1. All specified voltages are with respect to GND. Minimum DC voltage is –0.5 V on input/output signals and
–0.2 V on VCC and VPEN signals. During transitions, this level may undershoot to –2.0 V for periods <20
ns. Maximum DC voltage on input/output signals, VCC, and VPEN is VCC +0.5 V which, during transitions,
may overshoot to VCC +2.0 V for periods <20 ns.
2. Output shorted for no more than one second. No more than one output shorted at a time.
5.2
Table 5.
Operating Conditions
Temperature and VCC Operating Conditions
Symbol
18
Parameter
Min
Max
Unit
Test Condition
TA
Operating Temperature
–40
+85
°C
Ambient Temperature
VCC
VCC1 Supply Voltage (2.7 V−3.6 V)
2.70
3.60
V
—
VCCQ
VCCQ Supply Voltage (2.7 V−3.6 V)
2.70
3.60
V
—
Datasheet
256-Mbit J3 (x8/x16)
6.0
Electrical Specifications
6.1
DC Current Characteristics
Table 6.
Symbol
DC Current Characteristics (Sheet 1 of 2)
VCCQ
2.7 - 3.6V
VCC
2.7 - 3.6V
Parameter
Typ
Test Conditions
Max
Unit
Notes
ILI
Input and VPEN Load Current
±1
µA
VCC = VCC Max; VCCQ = VCCQ Max
VIN = VCCQ or GND
1
ILO
Output Leakage Current
±10
µA
VCC= VCC Max; VCCQ = VCCQ Max
VIN = VCCQ or GND
1
µA
CMOS Inputs, VCC = VCC Max,
Device is disabled (see Table 13, “Chip Enable
Truth Table” on page 33),
RP# = VCCQ ± 0.2 V
50
ICCS
ICCD
120
VCC Standby Current
VCC Power-Down Current
0.71
2
mA
TTL Inputs, VCC = VCC Max,
Device is disabled (see Table 13), RP# = VIH
50
120
µA
RP# = GND ± 0.2 V, IOUT (STS) = 0 mA
15
20
mA
24
29
mA
4word
Page
10
ICCR
15
mA
1,2,3
CMOS Inputs, VCC = VCC Max, VCCQ = VCCQ
Max using standard 4 word page mode reads.
Device is enabled (see Table 13)
f = 5 MHz, IOUT = 0 mA
CMOS Inputs,VCC = VCC Max, VCCQ = VCCQ
Max using standard 4 word page mode reads.
Device is enabled (see Table 13)
f = 33 MHz, IOUT = 0 mA
1,3
• CMOS Inputs, VCC = VCC Max, VCCQ =
VCCQ Max using standard 8 word page
mode reads.
• Device is enabled (see Table 13)
f = 5 MHz, IOUT = 0 mA
VCC Page Mode Read
Current
8word
Page
• CMOS Inputs,VCC = VCC Max, VCCQ =
VCCQ Max using standard 8 word page
mode reads.
30
54
mA
• Device is enabled (see Table 13)
f = 33 MHz, IOUT = 0 mA
• Density: 128-, 64-, and 32- Mbit
• CMOS Inputs,VCC = VCC Max, VCCQ =
VCCQ Max using standard 8 word page
mode reads.
26
46
mA
35
60
mA
CMOS Inputs, VPEN = VCC
40
70
mA
TTL Inputs, VPEN = VCC
• Device is enabled (see Table 13)
f = 33 MHz, IOUT = 0 mA
• Density: 256Mbit
ICCW
VCC Program or Set LockBit Current
Datasheet
1,4
19
256-Mbit J3 (x8/x16)
Table 6.
DC Current Characteristics (Sheet 2 of 2)
VCCQ
2.7 - 3.6V
VCC
2.7 - 3.6V
Symbol
Parameter
ICCE
VCC Block Erase or Clear
Block Lock-Bits Current
ICCWS
ICCES
VCC Program Suspend or
Block Erase Suspend
Current
Test Conditions
Typ
Max
Unit
35
70
mA
CMOS Inputs, VPEN = VCC
40
80
mA
TTL Inputs, VPEN = VCC
10
mA
Device is enabled (see Table 13)
Notes
1,4
1,5
NOTES:
1. All currents are in RMS unless otherwise noted. These currents are valid for all product versions (packages and
speeds). Contact Intel’s Application Support Hotline or your local sales office for information about typical
specifications.
2. Includes STS.
3. CMOS inputs are either VCC ± 0.2 V or GND ± 0.2 V. TTL inputs are either VIL or VIH.
4. Sampled, not 100% tested.
5. ICCWS and ICCES are specified with the device selected. If the device is read or written while in erase suspend
mode, the device’s current draw is ICCR and ICCWS
6.2
Table 7.
DC Voltage Characteristics
DC Voltage Characteristics
Symbol
VIL
VIH
VOL
VOH
VPENLK
20
Parameter
Min
Max
Unit
Input Low Voltage
–0.5
0.8
V
2, 6
Input High Voltage
2.0
VCCQ
+ 0.5
V
2,6
0.4
V
VCCQ = VCCQ Min
IOL = 2 mA
0.2
V
VCCQ = VCCQ Min
IOL = 100 µA
0.85 ×
VCCQ
V
VCCQ = VCCQ Min
IOH = –2.5 mA
VCCQ
– 0.2
V
VCCQ = VCCQ Min
IOH = –100 µA
Output Low Voltage
Output High Voltage
VPEN Lockout during Program,
Erase and Lock-Bit Operations
2.2
V
Test Conditions
Notes
1,2
1,2
2,3,4,7
Datasheet
256-Mbit J3 (x8/x16)
Table 7.
DC Voltage Characteristics
Symbol
Parameter
Min
Max
Unit
Test Conditions
Notes
VPENH
VPEN during Block Erase,
Program, or Lock-Bit Operations
2.7
3.6
V
3,4
VLKO
VCC Lockout Voltage
2.0
V
5
NOTES:
1. Includes STS.
2. Sampled, not 100% tested.
3. Block erases, programming, and lock-bit configurations are inhibited when VPEN ≤ VPENLK,
and not guaranteed in the range between VPENLK (max) and VPENH (min), and above VPENH
(max).
4. Typically, VPEN is connected to VCC (2.7 V–3.6 V).
5. Block erases, programming, and lock-bit configurations are inhibited when VCC < VLKO, and
not guaranteed in the range between VLKO (min) and VCC (min), and above VCC (max).
6. Includes all operational modes of the device including standby and power-up sequences.
7. VCC operating condition for standby has to meet typical operationg coditons.
Datasheet
21
256-Mbit J3 (x8/x16)
7.0
AC Characteristics
7.1
Read Operations
Table 8.
Read Operations (Sheet 1 of 2)
Asynchronous
Specifications
(All units in ns unless
otherwise noted)
VCC = 2.7 V–3.6 V (3)
VCCQ = 2.7 V–3.6 V (3)
Notes
Speed
Bin
#
R1
Sym
tAVAV
Parameter
Read/Write
Cycle Time
-110
Density
Min
32 Mbit
110
Max
-115
Min
Max
-120
Min
Max
64 Mbit
115
Address to
Output Delay
120
CEX to Output
Delay
150
tGLQV
1,2
1,2
110
1,2
64 Mbit
115
120
128 Mbit
1,2
120
150
125
1,2
64 Mbit
115
120
128 Mbit
1,2
120
150
125
OE# to NonArray Output
Delay
50
32 Mbit
1,2
1,2
110
256 Mbit
R4
Max
125
32 Mbit
tELQV
Min
1,2
256 Mbit
R3
Max
120
128 Mbit
32 Mbit
tAVQV
Min
-150
1,2
256 Mbit
R2
-125
50
50
1,2
1,2
50
50
1,2,4
150
1,2
64 Mbit
180
180
1,2
tPHQV
RP# High to
Output Delay
R6
tELQX
CEX to Output in Low Z
0
0
0
0
0
1,2,5
R7
tGLQX
OE# to Output in Low Z
0
0
0
0
0
1,2,5
R8
tEHQZ
CEX High to Output in High
Z
35
35
35
35
35
1,2,5
R9
tGHQZ
OE# High to Output in High
Z
15
15
15
15
15
1,2,5
R10
tOH
Output Hold from Address,
CEX, or OE# Change,
Whichever Occurs First
R11
tELFL/
tELFH
CEX Low to BYTE# High or
Low
R5
128 Mbit
210
210
256 Mbit
22
1,2
210
0
0
10
0
10
0
10
0
10
1,2,5
10
1,2,5
Datasheet
256-Mbit J3 (x8/x16)
Table 8.
Read Operations (Sheet 2 of 2)
Asynchronous
Specifications
(All units in ns unless
otherwise noted)
VCC = 2.7 V–3.6 V (3)
VCCQ = 2.7 V–3.6 V (3)
Notes
Speed
Bin
Parameter
-110
Density
Min
Max
-115
Max
Min
R12
tFLQV/
tFHQV
BYTE# to Output Delay
1000
1000
1000
1000
1000
1,2
R13
tFLQZ
BYTE# to Output in High Z
1000
1000
1000
1000
1000
1,2,5
R14
tEHEL
CEx High to CEx Low
R15
tAPA
Page Address Access Time
25
25
25
30
25
5, 6
R16
tGLQV
OE# to Array Output Delay
25
25
25
25
25
4
0
Min
-150
Sym
0
Max
-125
#
0
Min
-120
Max
0
Min
Max
0
1,2,5
NOTES:
CEX low is defined as the first edge of CE0, CE1, or CE2 that enables the device. CEX high is
defined at the first edge of CE0, CE1, or CE2 that disables the device (see Table 13).
1. See AC Input/Output Reference Waveforms for the maximum allowable input slew
rate.
2. OE# may be delayed up to tELQV-tGLQV after the first edge of CE0, CE1, or CE2 that
enables the device (see Table 13) without impact on tELQV.
3. See Figure 15, “Transient Input/Output Reference Waveform for VCCQ = 2.7 V–3.6
V” on page 29 and Figure 16, “Transient Equivalent Testing Load Circuit” on
page 30 for testing characteristics.
4. When reading the flash array a faster tGLQV (R16) applies. Non-array reads refer to
Status Register reads, query reads, or device identifier reads.
5. Sampled, not 100% tested.
6. For devices configured to standard word/byte read mode, R15 (tAPA) will equal R2
(tAVQV).
Figure 9. Single Word Asynchronous Read Waveform
R1
R2
Address [A]
R3
R8
CEx [E]
R9
OE# [G]
WE# [W]
R4
R16
R7
R6
R10
Data [D/Q]
R12
R11
R13
BYTE#[F]
R5
RP# [P]
Datasheet
23
256-Mbit J3 (x8/x16)
0606_16
NOTES:
1. CEX low is defined as the last edge of CE0, CE1, or CE2 that enables the device. CEX high is defined at the
first edge of CE0, CE1, or CE2 that disables the device (see Table 13).
2. When reading the flash array a faster tGLQV (R16) applies. For non-array reads, R4 applies (i.e.: Status
Register reads, query reads, or device identifier reads).
Figure 10. 4-Word Page Mode Read Waveform
R1
R2
A[MAX:3] [A]
A[2:1] [A]
00
01
10
11
R3
CEx [E]
R4
OE# [G]
WE# [W]
R6
R7
D[15:0] [Q]
R8
R10
R9
R10
R15
1
2
3
4
R5
RP# [P]
NOTE: CEX low is defined as the last edge of CE0, CE1, or CE2 that enables the device. CEX high is defined at
the first edge of CE0, CE1, or CE2 that disables the device (see Table 13).
24
Datasheet
256-Mbit J3 (x8/x16)
Figure 11. 8-word Asynchronous Page Mode Read
R1
R2
A[MAX:4] [A]
A[3:1] [A]
R3
CEx [E]
R4
OE# [G]
WE# [W]
R6
R7
D[15:0] [Q]
R10
R8
R9
R10
1
R15
2
6
8
R5
RP# [P]
BYTE#
NOTES:
1. CEX low is defined as the last edge of CE0, CE1, or CE2 that enables the device. CEX high is defined at the
first edge of CE0, CE1, or CE2 that disables the device (see Table 13).
2. In this diagram, BYTE# is asserted high.
Datasheet
25
256-Mbit J3 (x8/x16)
7.2
Write Operations
Table 9.
Write Operations
Valid for All
Speeds
Versions
#
W1
Symbol
Parameter
tPHWL (tPHEL)
RP# High Recovery to WE# (CEX) Going Low
Unit
Notes
1
µs
1,2,3
Min
Max
W2
tELWL (tWLEL)
CEX (WE#) Low to WE# (CEX) Going Low
0
ns
1,2,4
W3
tWP
Write Pulse Width
70
ns
1,2,4
W4
tDVWH (tDVEH)
Data Setup to WE# (CEX) Going High
50
ns
1,2,5
W5
tAVWH (tAVEH)
Address Setup to WE# (CEX) Going High
55
ns
1,2,5
W6
tWHEH (tEHWH)
CEX (WE#) Hold from WE# (CEX) High
0
ns
1,2,
W7
tWHDX (tEHDX)
Data Hold from WE# (CEX) High
0
ns
1,2,
W8
tWHAX (tEHAX)
Address Hold from WE# (CEX) High
0
ns
1,2,
W9
tWPH
Write Pulse Width High
30
ns
1,2,6
W11
tVPWH (tVPEH)
VPEN Setup to WE# (CEX) Going High
0
ns
1,2,3
W12
tWHGL (tEHGL)
Write Recovery before Read
35
ns
1,2,7
W13
tWHRL (tEHRL)
WE# (CEX) High to STS Going Low
ns
1,2,8
W15
tQVVL
VPEN Hold from Valid SRD, STS Going High
ns
1,2,3,8,9
500
0
NOTES:
CEX low is defined as the first edge of CE0, CE1, or CE2 that enables the device. CEX high is defined at the first edge of CE0, CE1,
or CE2 that disables the device (see Table 13).
1. Read timing characteristics during block erase, program, and lock-bit configuration operations are the same as
during read-only operations. Refer to AC Characteristics–Read-Only Operations.
2. A write operation can be initiated and terminated with either CEX or WE#.
3. Sampled, not 100% tested.
4. Write pulse width (tWP) is defined from CEX or WE# going low (whichever goes low last) to CEX or WE# going
high (whichever goes high first). Hence, tWP = tWLWH = tELEH = tWLEH = tELWH.
5. Refer to Table 14 for valid AIN and DIN for block erase, program, or lock-bit configuration.
6. Write pulse width high (tWPH) is defined from CEX or WE# going high (whichever goes high first) to CEX or WE#
going low (whichever goes low first). Hence, tWPH = tWHWL = tEHEL = tWHEL = tEHWL.
7. For array access, tAVQV is required in addition to tWHGL for any accesses after a write.
8. STS timings are based on STS configured in its RY/BY# default mode.
9. VPEN should be held at VPENH until determination of block erase, program, or lock-bit configuration success
(SR[1,3,4:5] = 0).
26
Datasheet
256-Mbit J3 (x8/x16)
7.3
Block Erase, Program, and Lock-Bit Configuration
Performance
Table 10. Configuration Performance
#
Typ
Max(8)
Unit
Notes
Write Buffer Byte Program Time
(Time to Program 32 bytes/16 words)
218
654
µs
1,2,3,4,5,6,7
Byte Program Time (Using Word/Byte Program Command)
210
630
µs
1,2,3,4
Sym
W16
Parameter
W16
tWHQV3
tEHQV3
Block Program Time (Using Write to Buffer Command)
0.8
2.4
sec
1,2,3,4
W16
tWHQV4
tEHQV4
Block Erase Time
1.0
5.0
sec
1,2,3,4
W16
tWHQV5
tEHQV5
Set Lock-Bit Time
64
75/85
µs
1,2,3,4,9
W16
tWHQV6
tEHQV6
Clear Block Lock-Bits Time
0.5
0.70/1.4
sec
1,2,3,4,10
W16
tWHRH1
tEHRH1
Program Suspend Latency Time to Read
25
75/90
µs
1,2,3,9
W16
tWHRH
tEHRH
Erase Suspend Latency Time to Read
26
35/40
µs
1,2,3,9
NOTES:
1. Typical values measured at TA = +25 °C and nominal voltages. Assumes corresponding lock-bits are
not set. Subject to change based on device characterization.
2. These performance numbers are valid for all speed versions.
3. Sampled but not 100% tested.
4. Excludes system-level overhead.
5. These values are valid when the buffer is full, and the start address is aligned on a 32-byte boundary.
6. Effective per-byte program time (tWHQV1, tEHQV1) is 6.8 µs/byte (typical).
7. Effective per-word program time (tWHQV2, tEHQV2) is 13.6 µs/word (typical).
8. Max values are measured at worst case temperature and VCC corner after 100k cycles (except as
noted).
9. Max values are expressed at -25 °C/-40 °C.
10.Max values are expressed at 25 °C/-40 °C.
Datasheet
27
256-Mbit J3 (x8/x16)
Figure 12. Asynchronous Write Waveform
W5
W8
ADDRESS [A]
W6
CEx (WE#) [E (W)]
W2
W3
W9
WE# (CEx) [W (E)]
OE# [G]
W4
DATA [D/Q]
W7
D
W13
STS[R]
W1
RP# [P]
W11
VPEN [V]
Figure 13. Asynchronous Write to Read Waveform
W5
W8
Address [A]
W6
CE# [E]
W2
W3
WE# [W]
W12
OE# [G]
W4
Data [D/Q]
W7
D
W1
RST#/ RP# [P]
W11
VPEN [V]
28
Datasheet
256-Mbit J3 (x8/x16)
7.4
Reset Operation
Figure 14. AC Waveform for Reset Operation
STS (R)
VIH
VIL
P2
RP# (P)
VIH
VIL
P1
NOTE: STS is shown in its default mode (RY/BY#).
Table 11. Reset Specifications
#
Sym
Parameter
Min
P1
tPLPH
RP# Pulse Low Time
(If RP# is tied to VCC, this specification is not
applicable)
P2
tPHRH
RP# High to Reset during Block Erase, Program, or
Lock-Bit Configuration
Max
35
100
Unit
Notes
µs
1,2
ns
1,3
NOTES:
1. These specifications are valid for all product versions (packages and speeds).
2. If RP# is asserted while a block erase, program, or lock-bit configuration operation is not
executing then the minimum required RP# Pulse Low Time is 100 ns.
3. A reset time, tPHQV, is required from the latter of STS (in RY/BY# mode) or RP# going high until
outputs are valid.
7.5
AC Test Conditions
Figure 15. Transient Input/Output Reference Waveform for VCCQ = 2.7 V–3.6 V
VCCQ
Input VCCQ/2
Test Points
VCCQ/2
Output
0.0
NOTE: AC test inputs are driven at VCCQ for a Logic "1" and 0.0 V for a Logic "0." Input timing begins, and
output timing ends, at VCCQ/2 V (50% of VCCQ). Input rise and fall times (10% to 90%) < 5 ns.
Datasheet
29
256-Mbit J3 (x8/x16)
Figure 16. Transient Equivalent Testing Load Circuit
1.3V
1N914
RL = 3.3 kΩ
Device
Under Test
Out
CL
NOTE: CL Includes Jig Capacitance.
7.6
Test Configuration
CL (pF)
VCCQ = VCC = 2.7 V−3.6 V
30
Capacitance
TA = +25 °C, f = 1 MHz
Symbol
Parameter(1)
Type
Max
Unit
Condition
CIN
Input Capacitance
6
8
pF
VIN = 0.0 V
COUT
Output Capacitance
8
12
pF
VOUT = 0.0 V
NOTES:
1. Sampled, not 100% tested.
30
Datasheet
256-Mbit J3 (x8/x16)
8.0
Power and Reset Specifications
This section provides an overview of system level considerations for the Intel StrataFlash®
memory family device. This section provides a brief description of power-up, power-down,
decoupling and reset design considerations.
8.1
Power-Up/Down Characteristics
In order to prevent any condition that may result in a spurious write or erase operation, it is
recommended to power-up and power-down VCC and VCCQ together. It is also recommended to
power-up VPEN with or slightly after VCC. Conversely, VPEN must power down with or slightly
before VCC.
8.2
Power Supply Decoupling
When the device is enabled, many internal conditions change. Circuits are energized, charge pumps
are switched on, and internal voltage nodes are ramped. All of this internal activities produce
transient signals. The magnitude of the transient signals depends on the device and system loading.
To minimize the effect of these transient signals, a 0.1 µF ceramic capacitor is required across each
VCC/VSS and VCCQ signal. Capacitors should be placed as close as possible to device
connections.
Additionally, for every eight flash devices, a 4.7 µF electrolytic capacitor should be placed between
VCC and VSS at the power supply connection. This 4.7 µF capacitor should help overcome
voltage slumps caused by PCB (printed circuit board) trace inductance.
8.3
Reset Characteristics
By holding the flash device in reset during power-up and power-down transitions, invalid bus
conditions may be masked. The flash device enters reset mode when RP# is driven low. In reset,
internal flash circuitry is disabled and outputs are placed in a high-impedance state. After return
from reset, a certain amount of time is required before the flash device is able to perform normal
operations. After return from reset, the flash device defaults to asynchronous page mode. If RP# is
driven low during a program or erase operation, the program or erase operation will be aborted and
the memory contents at the aborted block or address are no longer valid. See Figure 14, “AC
Waveform for Reset Operation” on page 29 for detailed information regarding reset timings.
Datasheet
31
256-Mbit J3 (x8/x16)
9.0
Bus Operations
This section provides an overview of device bus operations. The on-chip Write State Machine
(WSM) manages all erase and program algorithms. The system CPU provides control of all insystem read, write, and erase operations of the device via the system bus.
Device commands are written to the CUI to control all of the flash memory device’s operations.
The CUI does not occupy an addressable memory location; it’s the mechanism through which the
flash device is controlled.
9.1
Bus Operations Overview
The local CPU reads and writes flash memory in-system. All bus cycles to or from the flash
memory conform to standard microprocessor bus cycles.
Table 12. Bus Operations
RP#
CE[2:0](1)
OE#(2)
WE#(2)
Address
VPEN
Data(3)
STS
(default
mode)
Notes
Read Array
VIH
Enabled
VIL
VIH
X
X
DOUT
High Z(7)
4,5,6
Output Disable
VIH
Enabled
VIH
VIH
X
X
High Z
X
Standby
VIH
Disabled
X
X
X
X
High Z
X
Reset/Power-Down
Mode
VIL
X
X
X
X
X
High Z
High Z(7)
Read Identifier Codes
VIH
Enabled
VIL
VIH
See
Table 17
X
Note 8
High Z(7)
Read Query
VIH
Enabled
VIL
VIH
See
Table
10.3
X
Note 9
High Z(7)
Read Status (WSM off)
VIH
Enabled
VIL
VIH
X
X
DOUT
Read Status (WSM on)
VIH
Enabled
VIL
VIH
X
X
D[15:8] = High Z
Mode
D7 = DOUT
D[6:0] = High Z
Write
VIH
Enabled
VIH
VIL
X
VPENH
DIN
X
6,10,11
NOTES:
1. See Table 13 on page 33 for valid CE configurations.
2. OE# and WE# should never be enabled simultaneously.
3. D refers to D[7:0] if BYTE# is low and D[15:0] if BYTE# is high.
4. Refer to DC Characteristics. When VPEN ≤ VPENLK, memory contents can be read, but not altered.
5. X can be VIL or VIH for control and address signals, and VPENLK or VPENH for VPEN. See DC Characteristics for VPENLK and
VPENH voltages.
6. In default mode, STS is VOL when the WSM is executing internal block erase, program, or lock-bit configuration algorithms. It
is VOH when the WSM is not busy, in block erase suspend mode (with programming inactive), program suspend mode, or
reset/power-down mode.
7. High Z will be VOH with an external pull-up resistor.
8. See Section 10.2, “Read Identifier Codes” on page 39 for read identifier code data.
9. See Section 10.3, “Read Query/CFI” on page 41 for read query data.
10.Command writes involving block erase, program, or lock-bit configuration are reliably executed when VPEN = VPENH and VCC
is within specification.
32
Datasheet
256-Mbit J3 (x8/x16)
Table 13. Chip Enable Truth Table
CE2
CE1
CE0
DEVICE
VIL
VIL
VIL
Enabled
VIL
VIL
VIH
Disabled
VIL
VIH
VIL
Disabled
VIL
VIH
VIH
Disabled
VIH
VIL
VIL
Enabled
VIH
VIL
VIH
Enabled
VIH
VIH
VIL
Enabled
VIH
VIH
VIH
Disabled
NOTE: For single-chip applications, CE2 and CE1 can be connected to VIL.
9.1.1
Bus Read Operation
To perform a bus read operation, CEx (refer to Table 13 on page 33) and OE# must be asserted.
CEx is the device-select control; when active, it enables the flash memory device. OE# is the dataoutput control; when active, the addressed flash memory data is driven onto the I/O bus. For all
read states, WE# and RP# must be de-asserted. See Section 7.1, “Read Operations” on page 22.
Refer to Section 10.0, “Read Operations” on page 37 for details on reading from the flash array,
and refer to Section 14.0, “Special Modes” on page 50 for details regarding all other available read
states.
9.1.2
Bus Write Operation
Writing commands to the Command User Interface enables various modes of operation, including
the reading of array data, CFI data, identifier codes, inspection and clearing of the Status Register,
and, when VPEN = VPENH, block erasure, program, and lock-bit configuration.
The Block Erase command requires appropriate command data and an address within the block to
be erased. The Byte/Word Program command requires the command and address of the location to
be written. Set Block Lock-Bit commands require the command and block within the device to be
locked. The Clear Block Lock-Bits command requires the command and address within the device.
The CUI does not occupy an addressable memory location. It is written when the device is enabled
and WE# is active. The address and data needed to execute a command are latched on the rising
edge of WE# or the first edge of CE0, CE1, or CE2 that disables the device (see Table 13 on
page 33). Standard microprocessor write timings are used.
9.1.3
Output Disable
With CEx asserted, and OE# at a logic-high level (VIH), the device outputs are disabled. Output
signals D[15:0] are placed in a high-impedance state.
Datasheet
33
256-Mbit J3 (x8/x16)
9.1.4
Standby
CE0, CE1, and CE2 can disable the device (see Table 13 on page 33) and place it in standby mode.
This manipulation of CEx substantially reduces device power consumption. D[15:0] outputs are
placed in a high-impedance state independent of OE#. If deselected during block erase, program, or
lock-bit configuration, the WSM continues functioning, and consuming active power until the
operation completes.
9.1.5
Reset/Power-Down
RP# at VIL initiates the reset/power-down mode.
In read modes, RP#-low deselects the memory, places output drivers in a high-impedance state, and
turns off numerous internal circuits. RP# must be held low for a minimum of tPLPH. Time tPHQV is
required after return from reset mode until initial memory access outputs are valid. After this wakeup interval, normal operation is restored. The CUI is reset to read array mode and Status Register is
set to 0x80.
During block erase, program, or lock-bit configuration modes, RP#-low will abort the operation. In
default mode, STS transitions low and remains low for a maximum time of tPLPH + tPHRH until the
reset operation is complete. Memory contents being altered are no longer valid; the data may be
partially corrupted after a program or partially altered after an erase or lock-bit configuration. Time
tPHWL is required after RP# goes to logic-high (VIH) before another command can be written.
As with any automated device, it is important to assert RP# during system reset. When the system
comes out of reset, it expects to read from the flash memory. Automated flash memories provide
status information when accessed during block erase, program, or lock-bit configuration modes. If
a CPU reset occurs with no flash memory reset, proper initialization may not occur because the
flash memory may be providing status information instead of array data. Intel StrataFlash®
memory family devices allow proper initialization following a system reset through the use of the
RP# input. In this application, RP# is controlled by the same RESET# signal that resets the system
CPU.
34
Datasheet
256-Mbit J3 (x8/x16)
9.2
Device Commands
When the VPEN voltage ≤ VPENLK, only read operations from the Status Register, CFI, identifier
codes, or blocks are enabled. Placing VPENH on VPEN additionally enables block erase, program,
and lock-bit configuration operations. Device operations are selected by writing specific
commands into the CUI. Table 14, “Command Bus-Cycle Definitions” on page 35 defines these
commands.
Table 14. Command Bus-Cycle Definitions (Sheet 1 of 2)
Command
Scalable or
Basic
Command
Set(2)
First Bus Cycle
Bus
Cycles
Req’d.
Oper(3)
Second Bus Cycle
Notes
Addr(4)
Data(5,6)
Oper(3)
Addr(4)
Data(5,6)
Read Array
SCS/BCS
1
Write
X
0xFF
Read Identifier Codes
SCS/BCS
≥2
Write
X
0X90
Read
IA
ID
1,7
SCS
≥2
Write
X
0x98
Read
QA
QD
1
Read Status Register
SCS/BCS
2
Write
X
0x70
Read
X
SRD
1,8
Clear Status Register
SCS/BCS
1
Write
X
0x50
1
Read Query
1
Write to Buffer
SCS/BCS
>2
Write
BA
0xE8
Write
BA
N
1,9, 10,
11
Word/Byte Program
SCS/BCS
2
Write
X
0x40 or
0x10
Write
PA
PD
1,12,13
Block Erase
SCS/BCS
2
Write
BA
0x20
Write
BA
0xD0
1,11,12
Block Erase, Program
Suspend
SCS/BCS
1
Write
X
0xB0
1,12,14
Block Erase, Program
Resume
SCS/BCS
1
Write
X
0xD0
1,12
Configuration
SCS
2
Write
X
0xB8
Write
X
CC
1
Set Block Lock-Bit
SCS
2
Write
X
0x60
Write
BA
0x01
1
Datasheet
35
256-Mbit J3 (x8/x16)
Table 14. Command Bus-Cycle Definitions (Sheet 2 of 2)
Command
Clear Block Lock-Bits
Protection Program
Scalable or
Basic
Command
Set(2)
Bus
Cycles
Req’d.
Oper(3)
Addr(4)
Data(5,6)
Oper(3)
Addr(4)
Data(5,6)
SCS
2
Write
X
0x60
Write
X
0xD0
1,15
2
Write
X
0xC0
Write
PA
PD
1
First Bus Cycle
Second Bus Cycle
Notes
NOTES:
1. Commands other than those shown above are reserved by Intel for future device implementations and should not be used.
2. The Basic Command Set (BCS) is the same as the 28F008SA Command Set or Intel Standard Command Set. The Scalable
Command Set (SCS) is also referred to as the Intel Extended Command Set.
3. Bus operations are defined in Table 12.
4. X = Any valid address within the device.
BA = Address within the block.
IA = Identifier Code Address: see Table 17.
QA = Query database Address.
PA = Address of memory location to be programmed.
RCD = Data to be written to the read configuration register. This data is presented to the device on A[16:1]; all other address
inputs are ignored.
5. ID = Data read from Identifier Codes.
QD = Data read from Query database.
SRD = Data read from Status Register. See Table 18 for a description of the Status Register bits.
PD = Data to be programmed at location PA. Data is latched on the rising edge of WE#.
CC = Configuration Code.
6. The upper byte of the data bus (D[15:8]) during command writes is a “Don’t Care” in x16 operation.
7. Following the Read Identifier Codes command, read operations access manufacturer, device and block lock codes. See
Section 10.2 for read identifier code data.
8. If the WSM is running, only D7 is valid; D[15:8] and D[6:0] float, which places them in a high-impedance state.
9. After the Write to Buffer command is issued check the XSR to make sure a buffer is available for writing.
10.The number of bytes/words to be written to the Write Buffer = N + 1, where N = byte/word count argument. Count ranges on
this device for byte mode are N = 00H to N = 1FH and for word mode are N = 0x00 to N = 0x0F. The third and consecutive
bus cycles, as determined by N, are for writing data into the Write Buffer. The Confirm command (0xD0) is expected after
exactly N + 1 write cycles; any other command at that point in the sequence aborts the write to buffer operation. See Figure
18, “Write to Buffer Flowchart” on page 59 for additional information
11.The write to buffer or erase operation does not begin until a Confirm command (0xD0) is issued.
12.Attempts to issue a block erase or program to a locked block.
13.Either 0x40 or 0x10 are recognized by the WSM as the byte/word program setup.
14.Program suspends can be issued after either the Write-to-Buffer or Word/Byte-Program operation is initiated.
15.The clear block lock-bits operation simultaneously clears all block lock-bits.
36
Datasheet
256-Mbit J3 (x8/x16)
10.0
Read Operations
The device supports four types of read modes: Read Array, Read Identifier, Read Status, and CFI
query. Upon power-up or return from reset, the device defaults to read array mode. To change the
device’s read mode, the appropriate read-mode command must be written to the device. (See
Section 9.2, “Device Commands” on page 35.) See Section 14.0, “Special Modes” on page 50 for
details regarding read status, read ID, and CFI query modes.
Upon initial device power-up or after exit from reset/power-down mode, the device automatically
resets to read array mode. Otherwise, write the appropriate read mode command (Read Array, Read
Query, Read Identifier Codes, or Read Status Register) to the CUI. Six control signals dictate the
data flow in and out of the component: CE0, CE1, CE2, OE#, WE#, and RP#. The device must be
enabled (see Table 13, “Chip Enable Truth Table” on page 33), and OE# must be driven active to
obtain data at the outputs. CE0, CE1, and CE2 are the device selection controls and, when enabled
(see Table 13), select the memory device. OE# is the data output (D[15:0]) control and, when
active, drives the selected memory data onto the I/O bus. WE# must be at VIH.
10.1
Read Array
Upon initial device power-up and after exit from reset/power-down mode, the device defaults to
read array mode. The device defaults to four-word asynchronous read page mode. The Read Array
command also causes the device to enter read array mode. The device remains enabled for reads
until another command is written. If the internal WSM has started a block erase, program, or lockbit configuration, the device will not recognize the Read Array command until the WSM completes
its operation unless the WSM is suspended via an Erase or Program Suspend command. The Read
Array command functions independently of the VPEN voltage.
10.1.1
Asynchronous Page Mode Read
There are two Asynchronous Page mode configurations that are available depending on the user’s
system design requirements:
• Four-Word Page mode: This is the default mode on power-up or reset. Array data can be
sensed up to four words (8 Bytes) at a time.
• Eight-Word Page mode: Array data can be sensed up to eight words (16 Bytes) at a time. This
mode must be enabled on power-up or reset by using the command sequence found in
Table 14, “Command Bus-Cycle Definitions” on page 35. Address bits A[3:1] determine
which word is output during a read operation, and A[3:0] determine which byte is output for a
x8 bus width.
After the initial access delay, the first word out of the page buffer corresponds to the initial address.
In Four-Word Page mode, address bits A[2:1] determine which word is output from the page buffer
for a x16 bus width, and A[2:0] determine which byte is output from the page buffer for a x8 bus
width. Subsequent reads from the device come from the page buffer. These reads are output on
D[15:0] for a x16 bus width and D[7:0] for a x8 bus width after a minimum delay as long as A[2:0]
(Four-Word Page mode) or A[3:0] (Eight-Word Page mode) are the only address bits that change.
Data can be read from the page buffer multiple times, and in any order. In Four-Word Page Mode,
if address bits A[MAX:3] (A[MAX:4] for Eight-Word Page Mode) change at any time, or if CE# is
toggled, the device will sense and load new data into the page buffer. Asynchronous Page Mode is
the default read mode on power-up or reset.
Datasheet
37
256-Mbit J3 (x8/x16)
To perform a page mode read after any other operation, the Read Array command must be issued to
read from the flash array. Asynchronous page mode reads are permitted in all blocks and are used
to access register information. During register access, only one word is loaded into the page buffer.
10.1.2
Enhanced Configuration Register (ECR)
The Enhanced Configuration Register (ECR) is a volatile storage register that when addressed to
by the Set Enhanced Configuration Register command, and can select between Four-Word Page
mode and Eight-Word Page mode. The ECR is volatile; all bits will be reset to default values when
RP# is deasserted or power is removed from the device. To modify ECR settings, use the Set
Enhanced Configuration Register command. The Set Enhanced Configuration Register command
is written along with the configuration register value, which is placed on the lower 16 bits of the
address bus A[15:0]. This is followed by a second write that confirms the operation and again
presents the enhanced configuration register data on the address bus. After executing this
command, the device returns to Read Array mode. The ECR is shown in Table 15, “Enhanced
Configuration Register” on page 38.
Note:
For forward compatibility reasons, if the 8-word Asynchronous Page mode is to be used on J3C, a
Clear Status Register command must be issued after issuing the Set Enhanced Configuration
Register command. See Table 16, “J3C Asynchronous 8-Word Page Mode Command Bus-Cycle
Definition” on page 38 for further details.
Table 15. Enhanced Configuration Register
Res.
Reserved
R
R
8W
R
R
R
R
R
R
R
R
R
R
R
R
R
ECR
ECR
ECR
ECR
ECR
ECR
ECR
ECR
ECR
ECR
ECR
ECR
ECR
ECR
ECR
ECR
.15
.14
.13
.12
.11
.10
.9
.8
.7
.6
.5
.4
.3
.2
.1
.0
BITS
ECR[15:14]
ECR[13]
ECR[12:0]
DESCRIPTION
NOTES
Reserved for Future Use. Set to 0 until further
notice.
Reserved
• “1” = 8Word Page mode
• “0” = 4Word Page mode
Reserved for Future Use. Set to 0 until further
notice.
Reserved
NOTE: Any reserved bits should be set to 0.
Table 16. J3C Asynchronous 8-Word Page Mode Command Bus-Cycle Definition
Command
Set Enhanced
Configuration Register
(Set ECR)
First Bus Cycle
Second Bus Cycle
Third Bus Cycle
Bus
Cycles
Req’d.
Oper
Addr(1)
Data
Oper
Addr(1)
Data
Oper
Addr(1)
Data
3
Write
ECD
0x60
Write
ECD
0x04
Write
X
0x50
NOTE: X = Any valid address within the device. ECD = Enhanced Configuration Register Data.
38
Datasheet
256-Mbit J3 (x8/x16)
10.2
Read Identifier Codes
The Read identifier codes operation outputs the manufacturer code, device-code, and the block
lock configuration codes for each block (See Section 9.2, “Device Commands” on page 35 for
details on issuing the Read Device Identifier command). Page-mode reads are not supported in this
read mode. To terminate the operation, write another valid command. Like the Read Array
command, the Read Identifier Codes command functions independently of the VPEN voltage. This
command is valid only when the WSM is off or the device is suspended. Following the Read
Identifier Codes command, the following information can be read.
Table 17. Read Identifier Codes
Address(1)
Code
Manufacture Code
Device Code
Data
00000
(00) 89
32-Mbit
00001
(00) 16
64-Mbit
00001
(00) 17
128-Mbit
00001
(00) 18
00001
(00) 1D
256-Mbit
Block Lock Configuration
X0002(2)
• Block Is Unlocked
D0 = 0
• Block Is Locked
D0 = 1
• Reserved for Future Use
D[7:1]
NOTES:
1. A0 is not used in either x8 or x16 modes when obtaining the identifier
codes. The lowest order address line is A1. Data is always presented
on the low byte in x16 mode (upper byte contains 00h).
2. X selects the specific block’s lock configuration code.
3. D[7:1] are invalid and should be ignored.
10.2.1
Read Status Register
The Status Register may be read to determine when a block erase, program, or lock-bit
configuration is complete and whether the operation completed successfully. It may be read only
after the specified time W12 (see Table 9, “Write Operations” on page 26). After writing this
command, all subsequent read operations output data from the Status Register until another valid
command is written. Page-mode reads are not supported in this read mode. The Status Register
contents are latched on the falling edge of OE# or the first edge of CE0, CE1, or CE2 that enables
the device (see Table 13, “Chip Enable Truth Table” on page 33). OE# must toggle to VIH or the
device must be disabled before further reads to update the Status Register latch. The Read Status
Register command functions independently of the VPEN voltage.
During a program, block erase, set lock-bit, or clear lock-bit command sequence, only SR.7 is valid
until the Write State Machine completes or suspends the operation. Device I/O signals D[6:0] and
D[15:8] are placed in a high-impedance state. When the operation completes or suspends (check
SR.7), all contents of the Status Register are valid when read.
Datasheet
39
256-Mbit J3 (x8/x16)
Table 18. Status Register Definitions
WSMS
ESS
ECLBS
PSLBS
VPENS
PSS
DPS
R
bit 7
bit 6
bit 5
bit 4
bit 3
bit2
bit 1
bit 0
High Z
When
Busy?
Status Register Bits
No
SR.7 = WRITE STATE MACHINE STATUS
1 = Ready
0 = Busy
Yes
SR.6 = ERASE SUSPEND STATUS
1 = Block Erase Suspended
0 = Block Erase in Progress/Completed
Yes
Notes
Check STS or SR.7 to determine block erase,
program, or lock-bit configuration completion.
SR[6:0] are not driven while SR.7 = “0.”
If both SR.5 and SR.4 are “1”s after a block erase or
lock-bit configuration attempt, an improper
command sequence was entered.
SR.5 = ERASE AND CLEAR LOCK-BITSSTATUS
1 = Error in Block Erasure or Clear Lock-Bits
0 = Successful Block Erase or Clear Lock-Bits
Yes
SR.4 = PROGRAM AND SET LOCK-BIT STATUS
1 = Program Error / Error in Setting Lock-Bit
0 = Successful Program/Set Block Lock Bit
Yes
SR.3 = PROGRAMMING VOLTAGE STATUS
1 = Low Programming Voltage Detected, Operation
Aborted
0 = Programming Voltage OK
Yes
Yes
Yes
SR.3 does not provide a continuous programming
voltage level indication. The WSM interrogates and
indicates the programming voltage level only after
Block Erase, Program, Set Block Lock-Bit, or Clear
Block Lock-Bits command sequences.
SR.2 = PROGRAM SUSPEND STATUS
1 = Program suspended
0 = Program in progress/completed
SR.1 does not provide a continuous indication of
block lock-bit values. The WSM interrogates the
block lock-bits only after Block Erase, Program, or
Lock-Bit configuration command sequences. It
informs the system, depending on the attempted
operation, if the block lock-bit is set. Read the block
lock configuration codes using the Read Identifier
Codes command to determine block lock-bit status.
SR.1 = DEVICE PROTECT STATUS
1 = Block Lock-Bit Detected, Operation Abort
0 = Unlock
SR0 = RESERVED FOR FUTURE ENHANCEMENTS
SR0 is reserved for future use and should be
masked when polling the Status Register.
Table 19. Extended Status Register Definitions
WBS
Reserved
bit 7
Bits 6 -- 0
High Z
When
Busy?
40
Status Register Bits
No
XSR.7 = WRITE BUFFER STATUS
1 = Write buffer available
0 = Write buffer not available
Yes
XSR.6–XSR0 = RESERVED FOR FUTURE
ENHANCEMENTS
Notes
After a Buffer-Write command, XSR.7 = 1 indicates
that a Write Buffer is available.
SR[6:0] are reserved for future use and should be
masked when polling the Status Register.
Datasheet
256-Mbit J3 (x8/x16)
10.3
Read Query/CFI
The query register contains an assortment of flash product information such as block size, density,
allowable command sets, electrical specifications and other product information. The data
contained in this register conforms to the Common Flash Interface (CFI) protocol. To obtain any
information from the query register, execute the Read Query Register command. See Section 9.2,
“Device Commands” on page 35 for details on issuing the CFI Query command. Refer to
Appendix A, “Query Structure Overview” on page 53 for a detailed explanation of the CFI register.
Information contained in this register can only be accessed by executing a single-word read.
Datasheet
41
256-Mbit J3 (x8/x16)
11.0
Programming Operations
The device supports two different programming methods: word programming, and write-buffer
programming. Successful programming requires the addressed block to be unlocked. An attempt to
program a locked block will result in the operation aborting, and SR.1 and SR.4 being set,
indicating a programming error. The following sections describe device programming in detail.
11.1
Byte/Word Program
Byte/Word program is executed by a two-cycle command sequence. Byte/Word program setup
(standard 0x40 or alternate 0x10) is written followed by a second write that specifies the address
and data (latched on the rising edge of WE#). The WSM then takes over, controlling the program
and program verify algorithms internally. After the program sequence is written, the device
automatically outputs SRD when read (see Figure 20, “Byte/Word Program Flowchart” on
page 61). The CPU can detect the completion of the program event by analyzing the STS signal or
SR.7.
When program is complete, SR.4 should be checked. If a program error is detected, the Status
Register should be cleared. The internal WSM verify only detects errors for “1”s that do not
successfully program to “0”s. The CUI remains in Read Status Register mode until it receives
another command.
Reliable byte/word programming can only occur when VCC and VPEN are valid. If a byte/word
program is attempted while VPEN ≤ VPENLK, SR.4 and SR.3 will be set. Successful byte/word
programs require that the corresponding block lock-bit be cleared. If a byte/word program is
attempted when the corresponding block lock-bit is set, SR.1 and SR.4 will be set.
11.2
Write to Buffer
To program the flash device, a Write to Buffer command sequence is initiated. A variable number
of bytes, up to the buffer size, can be loaded into the buffer and written to the flash device. First, the
Write to Buffer Setup command is issued along with the Block Address (see Figure 18, “Write to
Buffer Flowchart” on page 59). At this point, the eXtended Status Register (XSR, see Table 19)
information is loaded and XSR.7 reverts to “buffer available” status. If XSR.7 = 0, the write buffer
is not available. To retry, continue monitoring XSR.7 by issuing the Write to Buffer setup
command with the Block Address until XSR.7 = 1. When XSR.7 transitions to a “1,” the buffer is
ready for loading.
Next, a word/byte count is given to the part with the Block Address. On the next write, a device
start address is given along with the write buffer data. Subsequent writes provide additional device
addresses and data, depending on the count. All subsequent addresses must lie within the start
address plus the count.
Internally, this device programs many flash cells in parallel. Because of this parallel programming,
maximum programming performance and lower power are obtained by aligning the start address at
the beginning of a write buffer boundary (i.e., A[4:0] of the start address = 0).
42
Datasheet
256-Mbit J3 (x8/x16)
After the final buffer data is given, a Write Confirm command is issued. This initiates the WSM
(Write State Machine) to begin copying the buffer data to the flash array. If a command other than
Write Confirm is written to the device, an “Invalid Command/Sequence” error will be generated
and SR.5 and SR.4 will be set. For additional buffer writes, issue another Write to Buffer Setup
command and check XSR.7.
If an error occurs while writing, the device will stop writing, and SR.4 will be set to indicate a
program failure. The internal WSM verify only detects errors for “1”s that do not successfully
program to “0”s. If a program error is detected, the Status Register should be cleared. Any time
SR.4 and/or SR.5 is set (e.g., a media failure occurs during a program or an erase), the device will
not accept any more Write to Buffer commands. Additionally, if the user attempts to program past
an erase block boundary with a Write to Buffer command, the device will abort the write to buffer
operation. This will generate an “Invalid Command/Sequence” error and SR.5 and SR.4 will be set.
Reliable buffered writes can only occur when VPEN = VPENH. If a buffered write is attempted
while VPEN ≤ VPENLK, SR.4 and SR.3 will be set. Buffered write attempts with invalid VCC and
VPEN voltages produce spurious results and should not be attempted. Finally, successful
programming requires that the corresponding block lock-bit be reset. If a buffered write is
attempted when the corresponding block lock-bit is set, SR.1 and SR.4 will be set.
11.3
Program Suspend
The Program Suspend command allows program interruption to read data in other flash memory
locations. Once the programming process starts (either by initiating a write to buffer or byte/word
program operation), writing the Program Suspend command requests that the WSM suspend the
program sequence at a predetermined point in the algorithm. The device continues to output SRD
when read after the Program Suspend command is written. Polling SR.7 can determine when the
programming operation has been suspended. When SR.7 = 1, SR.2 should also be set, indicating
that the device is in the program suspend mode. STS in level RY/BY# mode will also transition to
VOH. Specification tWHRH1 defines the program suspend latency.
At this point, a Read Array command can be written to read data from locations other than that
which is suspended. The only other valid commands while programming is suspended are Read
Query, Read Status Register, Clear Status Register, Configure, and Program Resume. After a
Program Resume command is written, the WSM will continue the programming process. SR.2 and
SR.7 will automatically clear and STS in RY/BY# mode will return to VOL. After the Program
Resume command is written, the device automatically outputs SRD when read. VPEN must remain
at VPENH and VCC must remain at valid VCC levels (the same VPEN and VCC levels used for
programming) while in program suspend mode. Refer to Figure 21, “Program Suspend/Resume
Flowchart” on page 62.
11.4
Program Resume
To resume (i.e., continue) a program suspend operation, execute the Program Resume command.
The Resume command can be written to any device address. When a program operation is nested
within an erase suspend operation and the Program Suspend command is issued, the device will
suspend the program operation. When the Resume command is issued, the device will resume and
complete the program operation. Once the nested program operation is completed, an additional
Resume command is required to complete the block erase operation. The device supports a
maximum suspend/resume of two nested routines. See Figure 21, “Program Suspend/Resume
Flowchart” on page 62).
Datasheet
43
256-Mbit J3 (x8/x16)
12.0
Erase Operations
Flash erasing is performed on a block basis; therefore, only one block can be erased at a time. Once
a block is erased, all bits within that block will read as a logic level one. To determine the status of
a block erase, poll the Status Register and analyze the bits. This following section describes block
erase operations in detail.
12.1
Block Erase
Erase is executed one block at a time and initiated by a two-cycle command. A block erase setup is
first written, followed by an block erase confirm. This command sequence requires an appropriate
address within the block to be erased (erase changes all block data to FFH). Block preconditioning,
erase, and verify are handled internally by the WSM (invisible to the system). After the two-cycle
block erase sequence is written, the device automatically outputs SRD when read (see Figure 22,
“Block Erase Flowchart” on page 63). The CPU can detect block erase completion by analyzing
the output of the STS signal or SR.7. Toggle OE#, CE0, CE1, or CE2 to update the Status Register.
When the block erase is complete, SR.5 should be checked. If a block erase error is detected, the
Status Register should be cleared before system software attempts corrective actions. The CUI
remains in Read Status Register mode until a new command is issued.
This two-step command sequence of setup followed by execution ensures that block contents are
not accidentally erased. An invalid Block Erase command sequence will result in both SR.4 and
SR.5 being set. Also, reliable block erasure can only occur when VCC is valid and VPEN = VPENH.
If block erase is attempted while VPEN ≤ VPENLK, SR.3 and SR.5 will be set. Successful block
erase requires that the corresponding block lock-bit be cleared. If block erase is attempted when the
corresponding block lock-bit is set, SR.1 and SR.5 will be set.
12.2
Block Erase Suspend
The Block Erase Suspend command allows block-erase interruption to read or program data in
another block of memory. Once the block erase process starts, writing the Block Erase Suspend
command requests that the WSM suspend the block erase sequence at a predetermined point in the
algorithm. The device outputs SRD when read after the Block Erase Suspend command is written.
Polling SR.7 then SR.6 can determine when the block erase operation has been suspended (both
will be set). In default mode, STS will also transition to VOH. Specification tWHRH defines the
block erase suspend latency.
At this point, a Read Array command can be written to read data from blocks other than that which
is suspended. A program command sequence can also be issued during erase suspend to program
data in other blocks. During a program operation with block erase suspended, SR.7 will return to
“0” and STS output (in default mode) will transition to VOL. However, SR.6 will remain “1” to
indicate block erase suspend status. Using the Program Suspend command, a program operation
can also be suspended. Resuming a suspended programming operation by issuing the Program
Resume command allows continuing of the suspended programming operation. To resume the
suspended erase, the user must wait for the programming operation to complete before issuing the
Block Erase Resume command.
44
Datasheet
256-Mbit J3 (x8/x16)
The only other valid commands while block erase is suspended are Read Query, Read Status
Register, Clear Status Register, Configure, and Block Erase Resume. After a Block Erase Resume
command is written to the flash memory, the WSM will continue the block erase process. SR.6 and
SR.7 will automatically clear and STS (in default mode) will return to VOL. After the Erase
Resume command is written, the device automatically outputs SRD when read (see Figure 23,
“Block Erase Suspend/Resume Flowchart” on page 64). VPEN must remain at VPENH (the same
VPEN level used for block erase) while block erase is suspended. Block erase cannot resume until
program operations initiated during block erase suspend have completed.
12.3
Erase Resume
To resume (i.e., continue) an erase suspend operation, execute the Erase Resume command. The
Resume command can be written to any device address. When a program operation is nested
within an erase suspend operation and the Program Suspend command is issued, the device will
suspend the program operation. When the Resume command is issued, the device will resume the
program operations first. Once the nested program operation is completed, an additional Resume
command is required to complete the block erase operation. The device supports a maximum
suspend/resume of two nested routines. See Figure 22, “Block Erase Flowchart” on page 63.
Datasheet
45
256-Mbit J3 (x8/x16)
13.0
Security Modes
This device offers both hardware and software security features. Block lock operations, PRs, and
VPEN allow the user to implement various levels of data protection. The following section
describes security features in detail.
Other security features are available that are not described in this datasheet. Please contact your
local Intel Field Representative for more information.
13.1
Set Block Lock-Bit
A flexible block locking scheme is enabled via block lock-bits. The block lock-bits gate program
and erase operations. Individual block lock-bits can be set using the Set Block Lock-Bit command.
This command is invalid while the WSM is running or the device is suspended.
Set block lock-bit commands are executed by a two-cycle sequence. The set block setup along with
appropriate block address is followed by either the set block lock-bit confirm (and an address
within the block to be locked). The WSM then controls the set lock-bit algorithm. After the
sequence is written, the device automatically outputs Status Register data when read (see Figure 24
on page 65). The CPU can detect the completion of the set lock-bit event by analyzing the STS
signal output or SR.7.
When the set lock-bit operation is complete, SR.4 should be checked. If an error is detected, the
Status Register should be cleared. The CUI will remain in Read Status Register mode until a new
command is issued.
This two-step sequence of setup followed by execution ensures that lock-bits are not accidentally
set. An invalid Set Block Lock-Bit command will result in SR.4 and SR.5 being set. Also, reliable
operations occur only when VCC and VPEN are valid. With VPEN ≤ VPENLK, lock-bit contents are
protected against alteration.
13.2
Clear Block Lock-Bits
All set block lock-bits are cleared in parallel via the Clear Block Lock-Bits command. Block lockbits can be cleared using only the Clear Block Lock-Bits command. This command is invalid while
the WSM is running or the device is suspended.
Clear block lock-bits command is executed by a two-cycle sequence. A clear block lock-bits setup
is first written. The device automatically outputs Status Register data when read (see Figure 25 on
page 66). The CPU can detect completion of the clear block lock-bits event by analyzing the STS
signal output or SR.7.
When the operation is complete, SR.5 should be checked. If a clear block lock-bit error is detected,
the Status Register should be cleared. The CUI will remain in Read Status Register mode until
another command is issued.
46
Datasheet
256-Mbit J3 (x8/x16)
This two-step sequence of setup followed by execution ensures that block lock-bits are not
accidentally cleared. An invalid Clear Block Lock-Bits command sequence will result in SR.4 and
SR.5 being set. Also, a reliable clear block lock-bits operation can only occur when VCC and VPEN
are valid. If a clear block lock-bits operation is attempted while VPEN ≤ VPENLK, SR.3 and SR.5
will be set.
If a clear block lock-bits operation is aborted due to VPEN or VCC transitioning out of valid range,
block lock-bit values are left in an undetermined state. A repeat of clear block lock-bits is required
to initialize block lock-bit contents to known values.
13.3
Protection Register Program
The Intel StrataFlash® memory (J3) includes a 128-bit Protection Register (PR) that can be used to
increase the security of a system design. For example, the number contained in the PR can be used
to “mate” the flash component with other system components such as the CPU or ASIC, preventing
device substitution.
The 128-bits of the PR are divided into two 64-bit segments. One of the segments is programmed at
the Intel factory with a unique 64-bit number, which is unalterable. The other segment is left blank
for customer designers to program as desired. Once the customer segment is programmed, it can be
locked to prevent further programming.
13.3.1
Reading the Protection Register
The Protection Register is read in the identification read mode. The device is switched to this mode
by issuing the Read Identifier command (0x90). Once in this mode, read cycles from addresses
shown in Table 8 or Table 21 retrieve the specified information. To return to read array mode, write
the Read Array command (0xFF).
13.3.2
Programming the Protection Register
Protection Register bits are programmed using the two-cycle Protection Program command. The
64-bit number is programmed 16 bits at a time for word-wide configuration and eight bits at a time
for byte-wide configuration. First write the Protection Program Setup command, 0xC0. The next
write to the device will latch in address and data and program the specified location. The allowable
addresses are shown in Table 8 or Table 21. See Figure 26, “Protection Register Programming
Flowchart” on page 67
Any attempt to address Protection Program commands outside the defined PR address space will
result in a Status Register error (SR.4 will be set). Attempting to program a locked PR segment will
result in a Status Register error (SR.4 and SR.1 will be set).
13.3.3
Locking the Protection Register
The user-programmable segment of the Protection Register is lockable by programming Bit 1 of
the PLR to 0. Bit 0 of this location is programmed to 0 at the Intel factory to protect the unique
device number. Bit 1 is set using the Protection Program command to program “0xFFFD” to the
PLR. After these bits have been programmed, no further changes can be made to the values stored
in the Protection Register. Protection Program commands to a locked section will result in a Status
Register error (SR.4 and SR.1 will be set). PR lockout state is not reversible.
Datasheet
47
256-Mbit J3 (x8/x16)
Figure 17. Protection Register Memory Map
Word
Address
A[24:1]: 256 Mbit
A[22:1]: 64 Mbit
A[23:1]: 128 Mbit
A[21:1]: 32 Mbit
0x88
64-bit Segment
(User-Programmable)
0x85
0x84
128-Bit Protection Register 0
64-bit Segment
(Factory-Programmed)
0x81
Lock Register 0
0x80
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
NOTE: A0 is not used in x16 mode when accessing the Protection Register map (See Table 8 for x16
addressing). For x8 mode A0 is used (See Table 21 for x8 addressing).
Table 20. Word-Wide Protection Register Addressing
Word
Use
A8
A7
A6
A5
A4
A3
A2
A1
LOCK
Both
1
0
0
0
0
0
0
0
0
Factory
1
0
0
0
0
0
0
1
1
Factory
1
0
0
0
0
0
1
0
2
Factory
1
0
0
0
0
0
1
1
3
Factory
1
0
0
0
0
1
0
0
4
User
1
0
0
0
0
1
0
1
5
User
1
0
0
0
0
1
1
0
6
User
1
0
0
0
0
1
1
1
7
User
1
0
0
0
1
0
0
0
Table 21. Byte-Wide Protection Register Addressing (Sheet 1 of 2)
48
Byte
Use
A8
A7
A6
A5
A4
A3
A2
A1
A0
LOCK
Both
1
0
0
0
0
0
0
0
0
LOCK
Both
1
0
0
0
0
0
0
0
1
0
Factory
1
0
0
0
0
0
0
1
0
1
Factory
1
0
0
0
0
0
0
1
1
2
Factory
1
0
0
0
0
0
1
0
0
3
Factory
1
0
0
0
0
0
1
0
1
4
Factory
1
0
0
0
0
0
1
1
0
5
Factory
1
0
0
0
0
0
1
1
1
Datasheet
256-Mbit J3 (x8/x16)
Table 21. Byte-Wide Protection Register Addressing (Sheet 2 of 2)
6
Factory
1
0
0
0
0
1
0
0
0
7
Factory
1
0
0
0
0
1
0
0
1
8
User
1
0
0
0
0
1
0
1
0
9
User
1
0
0
0
0
1
0
1
1
A
User
1
0
0
0
0
1
1
0
0
B
User
1
0
0
0
0
1
1
0
1
C
User
1
0
0
0
0
1
1
1
0
D
User
1
0
0
0
0
1
1
1
1
E
User
1
0
0
0
1
0
0
0
0
F
User
1
0
0
0
1
0
0
0
1
NOTE: All address lines not specified in the above table must be 0 when accessing the Protection Register,
i.e.g., A[MAX:9] = 0.
13.4
Array Protection
The VPEN signal is a hardware mechanism to prohibit array alteration. When the VPEN voltage is
below the VPENLK voltage, array contents cannot be altered. To ensure a proper erase or program
operation, VPEN must be set to a valid voltage level. To determine the status of an erase or program
operation, poll the Status Register and analyze the bits.
Datasheet
49
256-Mbit J3 (x8/x16)
14.0
Special Modes
This section describes how to read the status, ID, and CFI registers. This section also details how to
configure the STS signal.
14.1
Set Read Configuration Register Command
This command is no longer supported on J3A or J3C. The J3A device will ignore this command,
while the J3C device will result in an invalid command sequence (SR.4 and SR.5 =1).
14.2
Status (STS)
The Status (STS) signal can be configured to different states using the Configuration command.
Once the STS signal has been configured, it remains in that configuration until another
configuration command is issued or RP# is asserted low. Initially, the STS signal defaults to RY/
BY# operation where RY/BY# low indicates that the WSM is busy. RY/BY# high indicates that the
state machine is ready for a new operation or suspended. Table 22, “STS Configuration Coding
Definitions” on page 50 displays the possible STS configurations.
To reconfigure the Status (STS) signal to other modes, the Configuration command is given
followed by the desired configuration code. The three alternate configurations are all pulse mode
for use as a system interrupt as described below. For these configurations, bit 0 controls Erase
Complete interrupt pulse, and bit 1 controls Program Complete interrupt pulse. Supplying the 0x00
configuration code with the Configuration command resets the STS signal to the default RY/BY#
level mode. The possible configurations and their usage are described in Table 22, “STS
Configuration Coding Definitions” on page 50. The Configuration command may only be given
when the device is not busy or suspended. Check SR.7 for device status. An invalid configuration
code will result in both SR.4 and SR.5 being set. When configured in one of the pulse modes, the
STS signal pulses low with a typical pulse width of 250 ns.
Table 22. STS Configuration Coding Definitions
D7
D6
D5
D4
D3
D2
Reserved
D[1:0] = STS Configuration Codes
50
D1
D0
Pulse on
Program
Complete
(1)
Pulse on
Erase
Complete
(1)
Notes
00 = default, level mode;
device ready indication
Used to control HOLD to a memory controller to prevent accessing a
flash memory subsystem while any flash device's WSM is busy.
01 = pulse on Erase Complete
Used to generate a system interrupt pulse when any flash device in
an array has completed a block erase. Helpful for reformatting blocks
after file system free space reclamation or “cleanup.”
Datasheet
256-Mbit J3 (x8/x16)
Table 22. STS Configuration Coding Definitions
D7
D6
D5
D4
D3
D2
Reserved
D[1:0] = STS Configuration Codes
D1
D0
Pulse on
Program
Complete
(1)
Pulse on
Erase
Complete
(1)
Notes
10 = pulse on Program Complete
Used to generate a system interrupt pulse when any flash device in
an array has completed a program operation. Provides highest
performance for servicing continuous buffer write operations.
11 = pulse on Erase or Program
Complete
Used to generate system interrupts to trigger servicing of flash arrays
when either erase or program operations are completed, when a
common interrupt service routine is desired.
NOTES:
1. When configured in one of the pulse modes, STS pulses low with a typical pulse width of 250 ns.
2. An invalid configuration code will result in both SR.4 and SR.5 being set.
Datasheet
51
256-Mbit J3 (x8/x16)
Appendix A Common Flash Interface
The Common Flash Interface (CFI) specification outlines device and host system software
interrogation handshake which allows specific vendor-specified software algorithms to be used for
entire families of devices. This allows device independent, JEDEC ID-independent, and forwardand backward-compatible software support for the specified flash device families. It allows flash
vendors to standardize their existing interfaces for long-term compatibility.
This appendix defines the data structure or “database” returned by the Common Flash Interface
(CFI) Query command. System software should parse this structure to gain critical information
such as block size, density, x8/x16, and electrical specifications. Once this information has been
obtained, the software will know which command sets to use to enable flash writes, block erases,
and otherwise control the flash component. The Query command is part of an overall specification
for multiple command set and control interface descriptions called Common Flash Interface, or
CFI.
A.1
Query Structure Output
The Query “database” allows system software to gain information for controlling the flash
component. This section describes the device’s CFI-compliant interface that allows the host system
to access Query data.
Query data are always presented on the lowest-order data outputs (D[7:0]) only. The numerical
offset value is the address relative to the maximum bus width supported by the device. On this
family of devices, the Query table device starting address is a 10h, which is a word address for x16
devices.
For a word-wide (x16) device, the first two bytes of the Query structure, “Q” and “R” in ASCII,
appear on the low byte at word addresses 10h and 11h. This CFI-compliant device outputs 00H
data on upper bytes. Thus, the device outputs ASCII “Q” in the low byte (D[7:0]) and 0x00 (00h)
in the high byte (D[15:8]).
At Query addresses containing two or more bytes of information, the least significant data byte is
presented at the lower address, and the most significant data byte is presented at the higher address.
In all of the following tables, addresses and data are represented in hexadecimal notation, so the
“h” suffix has been dropped. In addition, since the upper byte of word-wide devices is always
“00h,” the leading “00” has been dropped from the table notation and only the lower byte value is
shown. Any x16 device outputs can be assumed to have 00h on the upper byte in this mode.
52
Datasheet
256-Mbit J3 (x8/x16)
Table 23. Summary of Query Structure Output as a Function of Device and Mode
Device
Type/
Mode
x16 device
x16 mode
x16 device
x8 mode
Query start location in
maximum device bus
width addresses
10h
Query data with maximum
device bus width addressing
Query data with byte
addressing
Hex
Offset
Hex
Code
ASCII
Value
Hex
Offset
Hex
Code
ASCII
Value
10:
11:
12:
0051
0052
0059
“Q”
“R”
“Y”
20:
21:
22:
20:
21:
22:
51
00
52
51
51
52
“Q”
“Null”
“R”
“Q”
“Q”
“R”
N/A(1)
N/A(1)
NOTE:
1. The system must drive the lowest order addresses to access all the device's array data when the device is
configured in x8 mode. Therefore, word addressing, where these lower addresses are not toggled by the
system, is "Not Applicable" for x8-configured devices.
Table 24. Example of Query Structure Output of a x16- and x8-Capable Device
Word Addressing
Offset
Hex Code
A15–A0
0010h
0011h
0012h
0013h
0014h
0015h
0016h
0017h
0018h
...
A.2
Byte Addressing
Value
D15–D0
0051
0052
0059
P_IDLO
P_IDHI
PLO
PHI
A_IDLO
A_IDHI
...
Offset
Hex Code
A7–A0
“Q”
“R”
“Y”
PrVendor
ID #
PrVendor
TblAdr
AltVendor
ID #
...
20h
21h
22h
23h
24h
25h
26h
27h
28h
...
Value
D7–D0
51
51
52
52
59
59
P_IDLO
P_IDLO
P_IDHI
...
“Q”
“Q”
“R”
“R”
“Y”
“Y”
PrVendor
ID #
ID #
...
Query Structure Overview
The Query command causes the flash component to display the Common Flash Interface (CFI)
Query structure or “database.” The structure sub-sections and address locations are summarized
below. See AP-646 Common Flash Interface (CFI) and Command Sets (order number 292204) for
a full description of CFI commands.
The following sections describe the Query structure sub-sections in detail.
Datasheet
53
256-Mbit J3 (x8/x16)
Table 25. Query Structure
Offset
Sub-Section Name
Description
Notes
00h
Manufacturer Code
1
01h
Device Code
1
(BA+2)h(2)
Block Status Register
Block-Specific Information
Reserved
Reserved for Vendor-Specific Information
1
10h
CFI Query Identification String
Reserved for Vendor-Specific Information
1
1Bh
System Interface Information
Command Set ID and Vendor Data Offset
1
27h
Device Geometry Definition
Flash Device Layout
1
P(3)
Primary Intel-Specific Extended
Query Table
Vendor-Defined Additional Information
Specific to the Primary Vendor Algorithm
04-0Fh
1,2
1,3
NOTES:
1. Refer to the Query Structure Output section and offset 28h for the detailed definition of offset
address as a function of device bus width and mode.
2. BA = Block Address beginning location (i.e., 02000h is block 2’s beginning location when the
block size is 128 Kbyte).
3. Offset 15 defines “P” which points to the Primary Intel-Specific Extended Query Table.
A.3
Block Status Register
The block status register indicates whether an erase operation completed successfully or whether a
given block is locked or can be accessed for flash program/erase operations.
Table 26. Block Status Register
Offset
(BA+2)h
Length
(1)
1
Description
Block Lock Status Register
BSR.0 Block Lock Status
0 = Unlocked
1 = Locked
BSR 1–7: Reserved for Future Use
Address
Value
BA+2:
--00 or --01
BA+2:
(bit 0): 0 or 1
BA+2:
(bit 1–7): 0
NOTE:
1. BA = The beginning location of a Block Address (i.e., 008000h is block 1’s (64-KB block) beginning location
in word mode).
A.4
CFI Query Identification String
The CFI Query Identification String provides verification that the component supports the
Common Flash Interface specification. It also indicates the specification version and supported
vendor-specified command set(s).
Table 27. CFI Identification (Sheet 1 of 2)
54
Offset
Length
Description
10h
3
Query-unique ASCII string “QRY”
13h
2
15h
2
Primary vendor command set and control interface ID code.
16-bit ID code for vendor-specified algorithms
Extended Query Table primary algorithm address
17h
2
Alternate vendor command set and control interface ID code.
Add.
Hex
Code
10
11:
12:
13:
14:
15:
16:
17:
--51
--52
--59
--01
--00
--31
--00
--00
Value
“Q”
“R”
“Y”
Datasheet
256-Mbit J3 (x8/x16)
Table 27. CFI Identification (Sheet 2 of 2)
A.5
Offset
Length
19h
2
Description
0000h means no second vendor-specified algorithm exists
Secondary algorithm Extended Query Table address.
0000h means none exists
Add.
Hex
Code
18:
19:
1A:
--00
--00
--00
Add.
Hex
Code
Value
1B:
--27
2.7 V
1C:
--36
3.6 V
1D:
--00
0.0 V
1E:
--00
0.0 V
1F:
20:
21:
22:
--08
--08
--0A
--00
256 µs
256 µs
1s
NA
23:
--04
2 ms
24:
25:
26:
--04
--04
--00
2 ms
16 s
NA
Value
System Interface Information
The following device information can optimize system interface software.
Table 28. System Interface Information
A.6
Offset
Length
1Bh
1
1Ch
1
1Dh
1
1Eh
1
1Fh
20h
21h
22h
1
1
1
1
23h
1
24h
25h
26h
1
1
1
Description
VCC logic supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
VCC logic supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
VPP [programming] supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
VPP [programming] supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
“n” such that typical single word program time-out = 2n µs
“n” such that typical max. buffer write time-out = 2n µs
“n” such that typical block erase time-out = 2n ms
“n” such that typical full chip erase time-out = 2n ms
“n” such that maximum word program time-out = 2n times
typical
“n” such that maximum buffer write time-out = 2n times typical
“n” such that maximum block erase time-out = 2n times typical
“n” such that maximum chip erase time-out = 2n times typical
Device Geometry Definition
This field provides critical details of the flash device geometry.
Table 29. Device Geometry Definition (Sheet 1 of 2)
Datasheet
Description
Code See Table
Below
Offset
Length
27h
1
“n” such that device size = 2n in number of bytes
27:
28h
2
Flash device interface: x8 async x16 async x8/x16 async
28:
--02
x8/
x16
2Ah
2
28:00,29:00 28:01,29:00 28:02,29:00
“n” such that maximum number of bytes in write buffer = 2n
29:
2A:
2B:
--00
--05
--00
32
55
256-Mbit J3 (x8/x16)
Table 29. Device Geometry Definition (Sheet 2 of 2)
Offset
Length
2Ch
Number of erase block regions within device:
1. x = 0 means no erase blocking; the device erases in “bulk”
2. x specifies the number of device or partition regions with one or
more contiguous same-size erase blocks
3. Symmetrically blocked partitions have one blocking region
4. Partition size = (total blocks) x (individual block size)
Erase Block Region 1 Information
bits 0–15 = y, y+1 = number of identical-size erase blocks
bits 16–31 = z, region erase block(s) size are z x 256 bytes
1
2Dh
Code See Table
Below
Description
4
2C:
--01
1
2D:
2E:
2F:
30:
Device Geometry Definition
A.7
Address
32 Mbit
64 Mbit
128 Mbit
256Mbit
27:
28:
29:
2A:
2B:
2C:
2D:
2E:
2F:
30:
--16
--02
--00
--05
--00
--01
--1F
--00
--00
--02
--17
--02
--00
--05
--00
--01
--3F
--00
--00
--02
--18
--02
--00
--05
--00
--01
--7F
--00
--00
--02
--19
--02
-00
-05
-00
-01
-FF
--00
--00
--02
Primary-Vendor Specific Extended Query Table
Certain flash features and commands are optional. The Primary Vendor-Specific Extended Query
table specifies this and other similar information.
Table 30. Primary Vendor-Specific Extended Query (Sheet 1 of 2)
Offset(1)
P = 31h
(P+0)h
(P+1)h
(P+2)h
(P+3)h
(P+4)h
56
Length
Description
(Optional Flash Features and Commands)
3
Primary extended query table
Unique ASCII string “PRI”
1
1
Major version number, ASCII
Minor version number, ASCII
Add.
Hex
Code
Value
31:
32:
33:
34:
35:
--50
--52
--49
--31
--31
“P”
“R”
“I”
“1”
“1”
Datasheet
256-Mbit J3 (x8/x16)
Table 30. Primary Vendor-Specific Extended Query (Sheet 2 of 2)
Offset(1)
P = 31h
Length
(P+5)h
(P+6)h
(P+7)h
(P+8)h
4
(P+9)h
1
(P+A)h
(P+B)h
2
(P+C)h
1
(P+D)h
1
Description
(Optional Flash Features and Commands)
Optional feature and command support (1=yes, 0=no)
bits 9–31 are reserved; undefined bits are “0.” If bit 31 is
“1” then another 31 bit field of optional features follows at
the end of the bit-30 field.
bit 0 Chip erase supported
bit 1 Suspend erase supported
bit 2 Suspend program supported
bit 3 Legacy lock/unlock supported
bit 4 Queued erase supported
bit 5 Instant Individual block locking supported
bit 6 Protection bits supported
bit 7 Page-mode read supported
bit 8 Synchronous read supported
Supported functions after suspend: read Array, Status,
Query
Other supported operations are:
bits 1–7 reserved; undefined bits are “0”
bit 0 Program supported after erase suspend
Block status register mask
bits 2–15 are Reserved; undefined bits are “0”
bit 0 Block Lock-Bit Status register active
bit 1 Block Lock-Down Bit Status active
VCC logic supply highest performance program/erase
voltage
bits 0–3 BCD value in 100 mV
bits 4–7 BCD value in volts
VPP optimum program/erase supply voltage
bits 0–3 BCD value in 100 mV
bits 4–7 HEX value in volts
Add.
Hex
Code
36:
--0A
37:
--00
38:
--00
39:
--00
bit 0 = 0
bit 1 = 1
bit 2 = 1
bit 3 = 1(1)
bit 4 = 0
bit 5 = 0
bit 6 = 1
bit 7 = 1
bit 8 = 0
3A:
Value
No
Yes
Yes
Yes(1)
No
No
Yes
Yes
No
--01
bit 0 = 1
3B:
--01
3C:
--00
bit 0 = 1
bit 1 = 0
Yes
Yes
No
3D:
--33
3.3 V
3E:
--00
0.0 V
NOTE:
1. Future devices may not support the described “Legacy Lock/Unlock” function. Thus bit 3 would have a
value of “0.”
Datasheet
57
256-Mbit J3 (x8/x16)
Table 31. Protection Register Information
Offset(1)
P = 31h
Length
(P+E)h
1
(P+F)h
(P+10)h
(P+11)h
(P+12)h
4
Description
(Optional Flash Features and Commands)
Number of Protection register fields in JEDEC ID space.
“00h,” indicates that 256 protection bytes are available
Protection Field 1: Protection Description
This field describes user-available One Time Programmable
(OTP) Protection Register bytes. Some are pre-programmed
with device-unique serial numbers. Others are userprogrammable. Bits 0-15 point to the Protection Register lock
byte, the section’s first byte. The following bytes are factory
pre-programmed and user-programmable.
Add.
Hex
Code
Value
3F:
--01
01
40:
--80
80h
41:
--00
00h
42:
--03
8bytes
43:
--03
8bytes
Add.
Hex
Code
Value
44:
--03
8 byte
45:
--00
0
bits 0-7 = Lock/bytes JEDEC-plane physical low address
bits 8-15 = Lock/bytes JEDEC-plane physical high address
bits 16-23 = “n” such that 2n = factory pre-programmed bytes
bits 24-31 = “n” such that 2n = user-programmable bytes
NOTE:
1. The variable P is a pointer which is defined at CFI offset 15h.
Table 32. Burst Read Information
Offset(1)
P = 31h
Length
Description
(Optional Flash Features and Commands)
Page Mode Read capability
(P+13)h
1
(P+14)h
1
bits 0–7 = “n” such that 2n HEX value represents the number
of read-page bytes. See offset 28h for device word width to
determine page-mode data output width. 00h indicates no
read page buffer.
Number of synchronous mode read configuration fields that
follow. 00h indicates no burst capability.
Reserved for future use
(P+15)h
NOTE:
1. The variable P is a pointer which is defined at CFI offset 15h.
58
46:
Datasheet
256-Mbit J3 (x8/x16)
Appendix B Flow Charts
Figure 18. Write to Buffer Flowchart
Start
Setup
- Write 0xE8
- Block Address
Check Buffer Status
- Perform read operation
- Read Ready Status on signal SR7
SR7 = 1?
No
Yes
Word Count
- Address = block address
- Data = word count minus 1
(Valid range = 0x00 to0x1F)
Load Buffer
- Fill write buffer up to word count
- Address = within buffer range
- Data = user data
Confirm
- Write 0xD0
- Block address
Read Status
Register (SR)
No
SR7 = 1?
Yes
Full Status Register
Check
(if desired)
End
Datasheet
59
256-Mbit J3 (x8/x16)
Figure 19. Status Register Flowchart
Start
Command Cycle
- Issue Status Register Command
- Address = any dev ice address
- Data = 0x70
Data Cycle
- Read Status Register SR[7:0]
SR7 = '1'
No
Y es
- Set/Reset
by WSM
SR6 = '1'
Y es
Erase Suspend
See Suspend/Resume Flowchart
Y es
Program Suspend
See Suspend/Resume Flowchart
No
SR2 = '1'
No
SR5 = '1'
Y es
SR4 = '1'
Y es
Error
Command Sequence
No
No
Error
Erase Failure
Y es
Error
Program Failure
Y es
Error
V PEN < VPENLK
Y es
Error
Block Locked
SR4 = '1'
- Set by WSM
- Reset by user
- See Clear Status
Register
Command
No
SR3 = '1'
No
SR1 = '1'
No
End
0606_07A
60
Datasheet
256-Mbit J3 (x8/x16)
Figure 20. Byte/Word Program Flowchart
Start
Write 40H,
Address
Write Data and
Address
Read Status
Register
Command
Comments
Write
Setup Byte/
Word Program
Data = 40H
Addr = Location to Be Programmed
Write
Byte/Word
Program
Data = Data to Be Programmed
Addr = Location to Be Programmed
Read
(Note 1)
Status Register Data
Standby
Check SR.7
1 = WSM Ready
0 = WSM Busy
1. Toggling OE# (low to high to low) updates the status register. This
can be done in place of issuing the Read Status Register command.
Repeat for subsequent programming operations.
0
SR.7 =
Bus
Operation
SR full status check can be done after each program operation, or
after a sequence of programming operations.
1
Full Status
Check if Desired
Write FFH after the last program operation to place device in read
array mode.
Byte/Word
Program Complete
FULL STATUS CHECK PROCEDURE
Bus
Operation
Read Status
Register Data
(See Above)
Check SR.3
1 = Programming to Voltage Error
Detect
Standby
Check SR.1
1 = Device Protect Detect
RP# = V IH, Block Lock-Bit Is Set
Only required for systems
implemeting lock-bit configuration.
Standby
Check SR.4
1 = Programming Error
Voltage Range Error
0
1
SR.1 =
Device Protect Error
0
1
SR.4 =
Programming Error
0
Byte/Word
Program
Successful
Datasheet
Comments
Standby
1
SR.3 =
Command
Toggling OE# (low to high to low) updates the status register. This can
be done in place of issuing the Read Status Register command.
Repeat for subsequent programming operations.
SR.4, SR.3 and SR.1 are only cleared by the Clear Status Register
command in cases where multiple locations are programmed before
full status is checked.
If an error is detected, clear the status register before attempting retry
or other error recovery.
61
256-Mbit J3 (x8/x16)
Figure 21. Program Suspend/Resume Flowchart
Start
Bus
Operation
Command
Write
Program
Suspend
Write B0H
0
Data = B0H
Addr = X
Status Register Data
Addr = X
Read
Read Status Register
Comments
Standby
Check SR.7
1 - WSM Ready
0 = WSM Busy
Standby
Check SR.6
1 = Programming Suspended
0 = Programming Completed
SR.7 =
Write
Read Array
Data = FFH
Addr = X
1
SR.2 =
Read array locations other
than that being programmed.
Read
0
Programming Completed
Write
Program
Resume
Data = D0H
Addr = X
1
Write FFH
Read Data Array
No
Done Reading
Yes
Write D0H
Write FFH
Programming Resumed
Read Array Data
0606_08
62
Datasheet
256-Mbit J3 (x8/x16)
Figure 22. Block Erase Flowchart
Start
Issue Single Block Erase
Command 20H, Block
Address
Bus
Operation
Command
Write
Erase Block
Write (Note 1)
Erase
Confirm
Read
Standby
Write Confirm D0H
Block Address
Comments
Data = 20H
Addr = Block Address
Data = D0H
Addr = X
Status register data
With the device enabled,
OE# low updates SR
Addr = X
Check SR.7
1 = WSM Ready
0 = WSM Busy
1. The Erase Confirm byte must follow Erase Setup.
This device does not support erase queuing. Please see
Application note AP-646 For software erase queuing
compatibility.
Read
Status Register
Full status check can be done after all erase and write
sequences complete. Write FFH after the last operation to
reset the device to read array mode.
No
Suspend
Erase Loop
SR.7 =
0
Suspend Erase
Yes
1
Full Status
Check if Desired
Erase Flash
Block(s) Complete
0606_09
Datasheet
63
256-Mbit J3 (x8/x16)
Figure 23. Block Erase Suspend/Resume Flowchart
Start
Bus
Operation
Command
Write
Erase Suspend
Write B0H
0
Data = B0H
Addr = X
Status Register Data
Addr = X
Read
Read Status Register
Comments
Standby
Check SR.7
1 - WSM Ready
0 = WSM Busy
Standby
Check SR.6
1 = Block Erase Suspended
0 = Block Erase Completed
SR.7 =
Write
Erase Resume
Data = D0H
Addr = X
1
0
SR.6 =
Block Erase Completed
1
Read
Program
Read or Program?
Read Array
Data
No
Program
Loop
Done?
Yes
Write D0H
Write FFH
Block Erase Resumed
Read Array Data
0606_10
64
Datasheet
256-Mbit J3 (x8/x16)
Figure 24. Set Block Lock-Bit Flowchart
Start
Write 60H,
Block Address
Write 01H,
Block Address
Bus
Operation
Command
Write
Set Block Lock-Bit
Setup
Data = 60H
Addr =Block Address
Write
Set Block Lock-Bit
Confirm
Data = 01H
Addr = Block Address
Read
Status Register Data
Read Status Register
Check SR.7
1 = WSM Ready
0 = WSM Busy
Standby
Repeat for subsequent lock-bit operations.
0
SR.7 =
Comments
Full status check can be done after each lock-bit set operation or after
a sequence of lock-bit set operations.
1
Write FFH after the last lock-bit set operation to place device in read
array mode.
Full Status
Check if Desired
Set Lock-Bit Complete
FULL STATUS CHECK PROCEDURE
Read Status Register
Data (See Above)
Bus
Operation
1
SR.3 =
1
SR.4,5 =
Command Sequence
Error
0
1
SR.4 =
0
Set Lock-Bit Error
Comments
Standby
Check SR.3
1 = Programming Voltage Error
Detect
Standby
Check SR.4, 5
Both 1 = Command Sequence
Error
Standby
Check SR.4
1 = Set Lock-Bit Error
Voltage Range Error
0
Command
SR.5, SR.4 and SR.3 are only cleared by the Clear Status Register
command, in cases where multiple lock-bits are set before full status is
checked.
If an error is detected, clear the status register before attempting retry
or other error recovery.
Set Lock-Bit
Successful
Datasheet
65
256-Mbit J3 (x8/x16)
Figure 25. Clear Lock-Bit Flowchart
Start
Write 60H
Bus
Operation
Command
Write
Clear Block
Lock-Bits Setup
Data = 60H
Addr = X
Write
Clear Block or
Lock-Bits Confirm
Data = D0H
Addr = X
Write D0H
Read
Status Register Data
Read Status Register
Check SR.7
1 = WSM Ready
0 = WSM Busy
Standby
0
SR.7 =
Comments
Write FFH after the clear lock-bits operation to place device in read
array mode.
1
Full Status
Check if Desired
Clear Block Lock-Bits
Complete
FULL STATUS CHECK PROCEDURE
Bus
Operation
Read Status Register
Data (See Above)
1
SR.3 =
1
SR.4,5 =
Command Sequence
Error
0
1
SR.5 =
Comments
Standby
Check SR.3
1 = Programming Voltage Error
Detect
Standby
Check SR.4, 5
Both 1 = Command Sequence
Error
Standby
Check SR.5
1 = Clear Block Lock-Bits Error
Voltage Range Error
0
Command
SR.5, SR.4, and SR.3 are only cleared by the Clear Status Register
command.
Clear Block Lock-Bits
Error
If an error is detected, clear the status register before attempting retry
or other error recovery.
0
Clear Block Lock-Bits
Successful
66
Datasheet
256-Mbit J3 (x8/x16)
Figure 26. Protection Register Programming Flowchart
Start
Bus Operation
Command
Write C0H
(Protection Reg.
Program Setup)
Write
Protection Program
Setup
Data = C0H
Write
Protection Program
Data = Data to Program
Addr = Location to Program
Write Protect. Register
Address/Data
Read
Status Register Data Toggle
CE# or OE# to Update Status
Register Data
Check SR.7
1 = WSM Ready
0 = WSM Busy
Standby
Read Status Register
Protection Program operations can only be addressed within the protection
register address space. Addresses outside the defined space will return an
error.
No
SR.7 = 1?
Comments
Repeat for subsequent programming operations.
Yes
SR Full Status Check can be done after each program or after a sequence of
program operations.
Full Status
Check if Desired
Write FFH after the last program operation to reset device to read array mode.
Program Complete
FULL STATUS CHECK PROCEDURE
Bus Operation
Read Status Register
Data (See Above)
VPEN Range Error
0,1
SR.1, SR.4 =
Protection Register
Programming Error
Comments
Standby
SR.1 SR.3 SR.4
0
1
1
V PEN Low
Standby
0
0
1
Prot. Reg.
Prog. Error
1
0
1
Register
Locked:
Aborted
1, 1
SR.3, SR.4 =
Command
Standby
SR.3 MUST be cleared, if set during a program attempt, before further
attempts are allowed by the Write State Machine.
1,1
SR.1, SR.4 =
Program Successful
Datasheet
Attempted Program to
Locked Register Aborted
SR.1, SR.3 and SR.4 are only cleared by the Clear Staus Register Command,
in cases of multiple protection register program operations before full status is
checked.
If an error is detected, clear the status register before attempting retry or other
error recovery.
67
256-Mbit J3 (x8/x16)
Appendix C Design Considerations
C.1
Three-Line Output Control
The device will often be used in large memory arrays. Intel provides five control inputs (CE0, CE1,
CE2, OE#, and RP#) to accommodate multiple memory connections. This control provides for:
a. Lowest possible memory power dissipation.
b. Complete assurance that data bus contention will not occur.
To use these control inputs efficiently, an address decoder should enable the device (see Table 13)
while OE# should be connected to all memory devices and the system’s READ# control line. This
assures that only selected memory devices have active outputs while de-selected memory devices
are in standby mode. RP# should be connected to the system POWERGOOD signal to prevent
unintended writes during system power transitions. POWERGOOD should also toggle during
system reset.
C.2
STS and Block Erase, Program, and Lock-Bit Configuration
Polling
STS is an open drain output that should be connected to VCCQ by a pull-up resistor to provide a
hardware method of detecting block erase, program, and lock-bit configuration completion. It is
recommended that a 2.5k resister be used between STS# and VCCQ. In default mode, it transitions
low after block erase, program, or lock-bit configuration commands and returns to High Z when
the WSM has finished executing the internal algorithm. For alternate configurations of the STS
signal, see the Configuration command.
STS can be connected to an interrupt input of the system CPU or controller. It is active at all times.
STS, in default mode, is also High Z when the device is in block erase suspend (with programming
inactive), program suspend, or in reset/power-down mode.
C.3
Input Signal Transitions—Reducing Overshoots and
Undershoots When Using Buffers or Transceivers
As faster, high-drive devices such as transceivers or buffers drive input signals to flash memory
devices, overshoots and undershoots can sometimes cause input signals to exceed flash memory
specifications. (See “DC Voltage Characteristics” on page 20.) Many buffer/transceiver vendors
now carry bus-interface devices with internal output-damping resistors or reduced-drive outputs.
Internal output-damping resistors diminish the nominal output drive currents, while still leaving
sufficient drive capability for most applications. These internal output-damping resistors help
reduce unnecessary overshoots and undershoots. Transceivers or buffers with balanced- or lightdrive outputs also reduce overshoots and undershoots by diminishing output-drive currents. When
considering a buffer/transceiver interface design to flash, devices with internal output-damping
resistors or reduced-drive outputs should be used to minimize overshoots and undershoots. For
additional information, please refer to AP-647, 5 Volt Intel StrataFlash® Memory Design Guide
(Order Number: 292205).
68
Datasheet
256-Mbit J3 (x8/x16)
C.4
VCC, VPEN, RP# Transitions
Block erase, program, and lock-bit configuration are not guaranteed if VPEN or VCC falls outside of
the specified operating ranges, or RP# ≠ VIH. If RP# transitions to VIL during block erase,
program, or lock-bit configuration, STS (in default mode) will remain low for a maximum time of
tPLPH + tPHRH until the reset operation is complete. Then, the operation will abort and the device
will enter reset/power-down mode. The aborted operation may leave data partially corrupted after
programming, or partially altered after an erase or lock-bit configuration. Therefore, block erase
and lock-bit configuration commands must be repeated after normal operation is restored. Device
power-off or RP# = VIL clears the Status Register.
The CUI latches commands issued by system software and is not altered by VPEN, CE0, CE1, or
CE2 transitions, or WSM actions. Its state is read array mode upon power-up, after exit from reset/
power-down mode, or after VCC transitions below VLKO. VCC must be kept at or above VPEN
during VCC transitions.
After block erase, program, or lock-bit configuration, even after VPEN transitions down to VPENLK,
the CUI must be placed in read array mode via the Read Array command if subsequent access to
the memory array is desired. VPEN must be kept at or below VCC during VPEN transitions.
C.5
Power Dissipation
When designing portable systems, designers must consider battery power consumption not only
during device operation, but also for data retention during system idle time. Flash memory’s
nonvolatility increases usable battery life because data is retained when system power is removed.
Datasheet
69
256-Mbit J3 (x8/x16)
Appendix D Additional Information
Order Number
Document/Tool
298130
Intel StrataFlash™ Memory (J3); 28F256J3, 28F128J3, 28F640J3, 28F320J3
Specification Update
298136
Intel® Persistent Storage Manager (IPSM) User’s Guide Software Manual
297833
Intel® Flash Data Integrator (FDI) User’s Guide Software Manual
290737
Intel StrataFlash® Synchronous Memory (K3/K18); 28F640K3, 28F640K18,
28F128K3, 28F128K18, 28F256K3, 28F256K18
292280
AP-732 3 Volt Intel StrataFlash® Memory J3 to K3/K18 Migration Guide
292237
AP-689 Using Intel® Persistent Storage Manager
290606
5 Volt Intel® StrataFlash™ MemoryI28F320J5 and 28F640J5 datasheet
297859
AP-677 Intel® StrataFlash™ Memory Technology
292222
AP-664 Designing Intel® StrataFlash™ Memory into Intel® Architecture
292221
AP-663 Using the Intel® StrataFlash™ Memory Write Buffer
292218
AP-660 Migration Guide to 3 Volt Intel® StrataFlash™ Memory
292204
AP-646 Common Flash Interface (CFI) and Command Sets
253418
Intel® Wireless Communications and Computing Package User’s Guide
®
1. Please call the Intel Literature Center at (800) 548-4725 to request Intel documentation. International
customers should contact their local Intel or distribution sales office.
2. Visit Intel’s World Wide Web home page at http://www.intel.com for technical documentation and tools.
3. For the most current information on Intel StrataFlash memory, visit our website at http://
developer.intel.com/design/flash/isf.
70
Datasheet
256-Mbit J3 (x8/x16)
Appendix E Ordering Information
PC2 8 F 2 5 6 J 3 C- 1 2 5
Access Speed (ns)1
256 Mbit = 125
128 Mbit = 150, 120
64 Mbit = 120, 115
32 Mbit = 110
Package
E = 56-Lead TSOP (J3A, 802)
TE= 56-Lead TSOP (J3C, 803)
JS = Pb-Free 56-TSOP
RC = 64-Ball Easy BGA
GE = 48-Ball VFBGA
PC = 64-Ball Pb-Free
Easy BGA
A = Intel® 0.25
micron lithography
C = Intel® 0.18
micron lithography
Voltage (VCC/V PEN)
3 = 3 V/3 V
Product line designator
for all Intel ® Flash
products
Product Family
J = Intel StrataFlash ® memory,
2 bits-per-cell
Device Density
256 = x8/x16 (256 Mbit)
128 = x8/x16 (128 Mbit)
640 = x8/x16 (64 Mbit)
320 = x8/x16 (32 Mbit)
NOTE:
1. Speeds are for either the standard asynchronous read access times or for the first access of a page-mode read sequence.
VALID COMBINATIONS
Datasheet
56-Lead TSOP
64-Ball Easy BGA
48-Ball VF BGA
E28F320J3A-110
RC28F320J3A-110
GE28F320J3A-110
E28F640J3A-120
RC28F640J3A-120
GE28F320J3C-110
E28F128J3A-150
RC28F128J3A-150
GE28F640J3C-115
TE28F320J3C-110
RC28F320J3C-110
GE28F640J3C-120
TE28F640J3C-115
RC28F640J3C-115
TE28F640J3C-120
RC28F640J3C-120
TE28F128J3C-120
RC28F128J3C-120
TE28F128J3C-150
RC28F128J3C-150
TE28F256J3C-125
RC28F256J3C-125
56-Lead Pb-Free TSOP
64-Ball Pb-Free Easy BGA
JS28F256J3C125
PC28F256J3C125
JS28F128J3C120
PC28F128J3C120
JS28F640J3C115
PC28F640J3C115
JS28F320J3C110
PC28F320J3C110
71
256-Mbit J3 (x8/x16)
72
Datasheet