AD ADG5412BRUZ High voltage latch-up proof, quad spst switch Datasheet

High Voltage Latch-Up Proof,
Quad SPST Switches
ADG5412/ADG5413
FUNCTIONAL BLOCK DIAGRAMS
Latch-up proof
8 kV human body model (HBM) ESD rating
Low on resistance (<10 Ω)
±9 V to ±22 V dual-supply operation
9 V to 40 V single-supply operation
48 V supply maximum ratings
Fully specified at ±15 V, ±20 V, +12 V, and +36 V
VSS to VDD analog signal range
S1
D1
S2
S2
IN2
IN2
D2
ADG5412
D2
ADG5413
S3
IN3
S3
IN3
D3
D3
S4
Relay replacement
Automatic test equipment
Data acquisition
Instrumentation
Avionics
Audio and video switching
Communication systems
The ADG5412/ADG5413 contain four independent singlepole/single-throw (SPST) switches. The ADG5412 switches
turn on with Logic 1. The ADG5413 has two switches with
digital control logic similar to that of the ADG5412; however,
the logic is inverted on the other two switches. Each switch
conducts equally well in both directions when on, and each
switch has an input signal range that extends to the supplies.
In the off condition, signal levels up to the supplies are blocked.
IN1
D1
APPLICATIONS
GENERAL DESCRIPTION
S1
IN1
S4
IN4
IN4
D4
D4
SWITCHES SHOWN FOR A LOGIC 1 INPUT.
09202-001
FEATURES
Figure 1.
exhibits break-before-make switching action for use in
multiplexer applications.
PRODUCT HIGHLIGHTS
1.
2.
3.
The ADG5412 and ADG5413 do not have a VL pin. The digital
inputs are compatible with 3 V logic inputs over the full
operating supply range.
4.
The on-resistance profile is very flat over the full analog input
range, which ensures good linearity and low distortion when
switching audio signals. High switching speed also makes the
devices suitable for video signal switching. The ADG5413
5.
6.
Trench isolation guards against latch-up. A dielectric trench
separates the P and N channel transistors thereby preventing
latch-up even under severe overvoltage conditions.
Low RON.
Dual-supply operation. For applications where the analog
signal is bipolar, the ADG5412/ADG5413 can be operated
from dual supplies up to ±22 V.
Single-supply operation. For applications where the analog
signal is unipolar, the ADG5412/ADG5413 can be operated
from a single rail power supply up to 40 V.
3 V logic compatible digital inputs: VINH = 2.0 V, VINL = 0.8 V.
No VL logic power supply required.
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
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Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113 ©2010–2011 Analog Devices, Inc. All rights reserved.
ADG5412/ADG5413
TABLE OF CONTENTS
Features .............................................................................................. 1
Continuous Current per Channel, Sx or Dx..............................7
Applications....................................................................................... 1
Absolute Maximum Ratings ............................................................8
Functional Block Diagrams............................................................. 1
ESD Caution...................................................................................8
General Description ......................................................................... 1
Pin Configurations and Function Descriptions ............................9
Product Highlights ........................................................................... 1
Typical Performance Characteristics ........................................... 10
Revision History ............................................................................... 2
Test Circuits..................................................................................... 14
Specifications..................................................................................... 3
Terminology .................................................................................... 16
±15 V Dual Supply ....................................................................... 3
Trench Isolation.............................................................................. 17
±20 V Dual Supply ....................................................................... 4
Applications Information .............................................................. 18
12 V Single Supply........................................................................ 5
Outline Dimensions ....................................................................... 19
36 V Single Supply........................................................................ 6
Ordering Guide .......................................................................... 19
REVISION HISTORY
6/11—Rev. 0 to Rev. A
Change to ISS Parameter in Table 2................................................. 4
7/10—Revision 0: Initial Version
Rev. A | Page 2 of 20
ADG5412/ADG5413
SPECIFICATIONS
±15 V DUAL SUPPLY
VDD = +15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance, RON
On-Resistance Match Between Channels,
∆RON
On-Resistance Flatness, RFLAT (ON)
25°C
−40°C to +85°C
−40°C to +125°C
Unit
VDD to VSS
V
Ω typ
9.8
14
16
Ω max
Ω typ
0.7
1.2
1.6
0.9
1.1
VS = ±10 V, IS = −10 mA
2
2.2
Ω max
Ω typ
Ω max
nA typ
VDD = +16.5 V, VSS = −16.5 V
VS = ±10 V, VD = m 10 V;
see Figure 27
±0.05
±0.25
±0.05
±0.75
Drain Off Leakage, ID (Off )
±0.25
±0.1
±0.4
±0.75
±3.5
±2
±12
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current, IINL or IINH
±3.5
tOFF
Break-Before-Make Time Delay, tD
(ADG5413 Only)
nA max
nA typ
VS = ±10 V, VD = m 10 V;
see Figure 27
nA max
nA typ
nA max
VS = VD = ±10 V; see Figure 23
VIN = VGND or VDD
2.5
V min
V max
μA typ
μA max
pF typ
170
202
120
145
15
ns typ
ns max
ns typ
ns max
ns typ
RL = 300 Ω, CL = 35 pF
VS = 10 V; see Figure 31
RL = 300 Ω, CL = 35 pF
VS = 10 V; see Figure 31
RL = 300 Ω, CL = 35 pF
VS1 = VS2 = 10 V; see Figure 30
VS = 0 V, RS = 0 Ω, CL = 1 nF;
see Figure 32
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 26
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 25
RL = 1 kΩ, 15 V p-p, f = 20 Hz
to 20 kHz; see Figure 28
RL = 50 Ω, CL = 5 pF; see
Figure 29
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 29
VS = 0 V, f = 1 MHz
VS = 0 V, f = 1 MHz
VS = 0 V, f = 1 MHz
2.0
0.8
0.002
±0.1
Digital Input Capacitance, CIN
DYNAMIC CHARACTERISTICS 1
tON
VS = ±10 V, IS = −10 mA;
see Figure 24
VDD = +13.5 V, VSS = −13.5 V
VS = ±10 V, IS = −10 mA
11
0.35
LEAKAGE CURRENTS
Source Off Leakage, IS (Off )
Channel On Leakage, ID (On), IS (On)
Test Conditions/Comments
236
262
170
182
Charge Injection, QINJ
240
6
ns min
pC typ
Off Isolation
−78
dB typ
Channel-to-Channel Crosstalk
−70
dB typ
Total Harmonic Distortion + Noise
0.009
% typ
−3 dB Bandwidth
167
MHz typ
Insertion Loss
−0.7
dB typ
CS (Off )
CD (Off )
CD (On), CS (On)
18
18
60
pF typ
pF typ
pF typ
Rev. A | Page 3 of 20
ADG5412/ADG5413
Parameter
POWER REQUIREMENTS
IDD
25°C
−40°C to +85°C
45
55
0.001
ISS
Unit
μA typ
μA max
μA typ
μA max
V min/V max
70
1
±9/±22
VDD/VSS
1
−40°C to +125°C
Test Conditions/Comments
VDD = +16.5 V, VSS = −16.5 V
Digital inputs = 0 V or VDD
Digital inputs = 0 V or VDD
GND = 0 V
Guaranteed by design; not subject to production test.
±20 V DUAL SUPPLY
VDD = +20 V ± 10%, VSS = −20 V ± 10%, GND = 0 V, unless otherwise noted.
Table 2.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance, RON
On-Resistance Match Between
Channels, ∆RON
On-Resistance Flatness, RFLAT (ON)
25°C
−40°C to +85°C
Unit
VDD to VSS
V
Ω typ
9
15
Ω max
Ω typ
0.7
1.5
1.8
0.9
1.1
VS = ±15 V, IS = −10 mA
2.2
2.5
Ω max
Ω typ
Ω max
nA typ
VDD = +22 V, VSS = −22 V
VS = ±15 V, VD = m 15 V;
see Figure 27
±0.25
±0.05
±0.75
Drain Off Leakage, ID (Off )
±0.25
±0.1
±0.75
Channel On Leakage, ID (On), IS (On)
±0.4
±2
±3.5
±3.5
Break-Before-Make Time Delay, tD
(ADG5413 Only)
nA max
nA typ
VS = ±15 V, VD = m 15 V;
see Figure 27
VS = VD = ±15 V; see
Figure 23
nA max
2.0
0.8
V min
V max
μA typ
μA max
pF typ
VIN = VGND or VDD
ns typ
ns max
ns typ
ns max
ns typ
RL = 300 Ω, CL = 35 pF
VS = 10 V; see Figure 31
RL = 300 Ω, CL = 35 pF
VS = 10 V; see Figure 31
RL = 300 Ω, CL = 35 pF
ns min
VS1 = VS2 = 10 V; see
Figure 30
VS = 0 V, RS = 0 Ω, CL = 1 nF;
see Figure 32
RL = 50 Ω, CL = 5 pF, f = 1 MHz; see
Figure 26
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 25
0.002
2.5
158
187
110
138
12
nA max
nA typ
±12
±0.1
tOFF
VS = ±15 V, IS = −10 mA;
see Figure 24
VDD = +18 V, VSS = −18 V
VS = ±15 V, IS = −10 mA
13
±0.05
Digital Input Capacitance, CIN
DYNAMIC CHARACTERISTICS 1
tON
Test Conditions/Comments
10
0.35
LEAKAGE CURRENTS
Source Off Leakage, IS (Off )
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current, IINL or IINH
−40°C to +125°C
217
240
154
170
5
Charge Injection, QINJ
310
pC typ
Off Isolation
−78
dB typ
Channel-to-Channel Crosstalk
−70
dB typ
Rev. A | Page 4 of 20
ADG5412/ADG5413
Parameter
Total Harmonic Distortion + Noise
25°C
0.007
−40°C to +85°C
Unit
% typ
−3 dB Bandwidth
160
MHz typ
Insertion Loss
−0.6
dB typ
17
17
60
pF typ
pF typ
pF typ
CS (Off )
CD (Off )
CD (On), CS (On)
POWER REQUIREMENTS
IDD
ISS
50
70
0.001
110
1
±9/±22
VDD/VSS
1
−40°C to +125°C
μA typ
μA max
μA typ
μA max
V min/V max
Test Conditions/Comments
RL = 1 kΩ, 20 V p-p, f = 20 Hz to
20 kHz; see Figure 28
RL = 50 Ω, CL = 5 pF;
see Figure 29
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 29
VS = 0 V, f = 1 MHz
VS = 0 V, f = 1 MHz
VS = 0 V, f = 1 MHz
VDD = +22 V, VSS = −22 V
Digital inputs = 0 V or VDD
Digital inputs = 0 V or VDD
GND = 0 V
Guaranteed by design; not subject to production test.
12 V SINGLE SUPPLY
VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.
Table 3.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance, RON
On-Resistance Match Between Channels,
∆RON
On-Resistance Flatness, RFLAT (ON)
25°C
−40°C to +85°C
Unit
0 V to VDD
V
Ω typ
19
31
Ω max
Ω typ
0.8
4.4
5.5
1
1.2
VS = 0 V to 10 V, IS = −10 mA
6.5
7.5
Ω max
Ω typ
Ω max
nA typ
VDD = 13.2 V, VSS = 0 V
VS = 1 V/10 V, VD = 10 V/1 V;
see Figure 27
±0.25
±0.05
±0.75
Drain Off Leakage, ID (Off )
±0.75
Channel On Leakage, ID (On), IS (On)
±0.25
±0.1
±0.4
±2
±3.5
±3.5
nA max
nA typ
VS = 1 V/10 V, VD = 10 V/1 V;
see Figure 27
VS = VD = 1 V/10 V; see
Figure 23
nA max
2.0
0.8
V min
V max
μA typ
μA max
pF typ
VIN = VGND or VDD
ns typ
ns max
ns typ
ns max
RL = 300 Ω, CL = 35 pF
VS = 8 V; see Figure 31
RL = 300 Ω, CL = 35 pF
VS = 8 V; see Figure 31
0.002
2.5
225
296
150
187
nA max
nA typ
±12
±0.1
tOFF
VS = 0 V to 10 V, IS = −10 mA;
see Figure 24
VDD = 10.8 V, VSS = 0 V
VS = 0 V to 10 V, IS = −10 mA
27
±0.05
Digital Input Capacitance, CIN
DYNAMIC CHARACTERISTICS 1
tON
Test Conditions/Comments
22
0.4
LEAKAGE CURRENTS
Source Off Leakage, IS (Off )
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current, IINL or IINH
−40°C to +125°C
358
403
222
247
Rev. A | Page 5 of 20
ADG5412/ADG5413
Parameter
Break-Before-Make Time Delay, tD
(ADG5413 Only)
25°C
70
−40°C to +85°C
Unit
ns typ
Test Conditions/Comments
RL = 300 Ω, CL = 35 pF
38
VS1 = VS2 = 8 V; see Figure 30
VS = 6 V, RS = 0 Ω, CL = 1 nF;
see Figure 32
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 26
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 25
RL = 1 kΩ, 6 V p-p, f = 20 Hz
to 20 kHz; see Figure 28
RL = 50 Ω, CL = 5 pF; see
Figure 29
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 29
VS = 6 V, f = 1 MHz
VS = 6 V, f = 1 MHz
VS = 6 V, f = 1 MHz
VDD = 13.2 V
Digital inputs = 0 V or VDD
Charge Injection, QINJ
95
ns min
pC typ
Off Isolation
−78
dB typ
Channel-to-Channel Crosstalk
−70
dB typ
Total Harmonic Distortion + Noise
0.07
% typ
−3 dB Bandwidth
180
MHz typ
Insertion Loss
−1.3
dB typ
22
22
58
pF typ
pF typ
pF typ
CS (Off )
CD (Off )
CD (On), CS (On)
POWER REQUIREMENTS
IDD
40
65
9/40
VDD
1
−40°C to +125°C
μA typ
μA max
V min/V max
GND = 0 V, VSS = 0 V
Guaranteed by design; not subject to production test.
36 V SINGLE SUPPLY
VDD = 36 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.
Table 4.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance, RON
On-Resistance Match Between Channels,
∆RON
On-Resistance Flatness, RFLAT(ON)
25°C
−40°C to +85°C
−40°C to +125°C
Unit
0 V to VDD
V
Ω typ
10.6
Test Conditions/Comments
VS = 0 V to 30 V, IS = −10 mA;
see Figure 24
VDD = 32.4 V, VSS = 0 V
VS = 0 V to 30 V, IS = −10 mA
12
0.35
15
17
Ω max
Ω typ
0.7
2.7
3.2
0.9
1.1
VS = 0 V to 30 V, IS = −10 mA
3.8
4.5
Ω max
Ω typ
Ω max
nA typ
VDD = 39.6 V, VSS = 0 V
VS = 1 V/30 V, VD = 30 V/1 V;
see Figure 27
LEAKAGE CURRENTS
Source Off Leakage, IS (Off )
±0.05
±0.25
±0.05
±0.75
Drain Off Leakage, ID (Off )
±0.25
±0.1
±0.75
Channel On Leakage, ID (On), IS (On)
±0.4
±2
±3.5
±3.5
±12
Rev. A | Page 6 of 20
nA max
nA typ
nA max
nA typ
nA max
VS = 1 V/30 V, VD = 30 V/1 V;
see Figure 27
VS = VD = 1 V/30 V; see
Figure 23
ADG5412/ADG5413
Parameter
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current, IINL or IINH
25°C
−40°C to +85°C
−40°C to +125°C
Unit
Test Conditions/Comments
2.0
0.8
V min
V max
μA typ
μA max
pF typ
VIN = VGND or VDD
ns typ
ns max
ns typ
ns max
ns typ
RL = 300 Ω, CL = 35 pF
VS = 18 V; see Figure 31
RL = 300 Ω, CL = 35 pF
VS = 18 V; see Figure 31
RL = 300 Ω, CL = 35 pF
VS1 = VS2 = 18 V; see Figure 30
VS = 18 V, RS = 0 Ω, CL = 1 nF;
see Figure 32
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 26
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
Figure 25
RL = 1 kΩ, 18 V p-p, f = 20 Hz
to 20 kHz; see Figure 28
RL = 50 Ω, CL = 5 pF; see
Figure 29
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 29
VS = 18 V, f = 1 MHz
VS = 18 V, f = 1 MHz
VS = 18 V, f = 1 MHz
VDD = 39.6 V
Digital inputs = 0 V or VDD
0.002
±0.1
Digital Input Capacitance, CIN
DYNAMIC CHARACTERISTICS 1
tON
tOFF
Break-Before-Make Time Delay, tD
(ADG5413 Only)
2.5
180
220
130
169
25
230
248
167
174
Charge Injection, QINJ
280
8
ns min
pC typ
Off Isolation
−78
dB typ
Channel-to-Channel Crosstalk
−70
dB typ
Total Harmonic Distortion + Noise
0.03
% typ
−3 dB Bandwidth
174
MHz typ
Insertion Loss
−0.8
dB typ
18
18
58
pF typ
pF typ
pF typ
CS (Off )
CD (Off )
CD (On), CS (On)
POWER REQUIREMENTS
IDD
80
100
VDD
1
μA typ
μA max
V min/V max
130
9/40
GND = 0 V, VSS = 0 V
Guaranteed by design; not subject to production test.
CONTINUOUS CURRENT PER CHANNEL, Sx OR Dx
Table 5.
Parameter
CONTINUOUS CURRENT, Sx OR Dx
VDD = +15 V, VSS = −15 V
TSSOP (θJA = 112.6°C/W)
LFCSP (θJA = 30.4°C/W)
VDD = +20 V, VSS = −20 V
TSSOP (θJA = 112.6°C/W)
LFCSP (θJA = 30.4°C/W)
VDD = 12 V, VSS = 0 V
TSSOP (θJA = 112.6°C/W)
LFCSP (θJA = 30.4°C/W)
VDD = 36 V, VSS = 0 V
TSSOP (θJA = 112.6°C/W)
LFCSP (θJA = 30.4°C/W)
25°C
85°C
125°C
Unit
89
160
59
94
37
49
mA maximum
mA maximum
95
170
63
98
39
50
mA maximum
mA maximum
61
110
43
70
29
42
mA maximum
mA maximum
80
144
54
87
35
47
mA maximum
mA maximum
Rev. A | Page 7 of 20
ADG5412/ADG5413
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 6.
Parameter
VDD to VSS
VDD to GND
VSS to GND
Analog Inputs1
Digital Inputs1
Peak Current, Sx or Dx Pins
Continuous Current, Sx or Dx2
Temperature Range
Operating
Storage
Junction Temperature
Thermal Impedance, θJA
16-Lead TSSOP (4-Layer
Board)
16-Lead LFCSP (4-Layer
Board)
Reflow Soldering Peak
Temperature, Pb Free
Rating
48 V
−0.3 V to +48 V
+0.3 V to −48 V
VSS − 0.3 V to VDD + 0.3 V or
30 mA, whichever occurs first
VSS − 0.3 V to VDD + 0.3 V or
30 mA, whichever occurs first
278 mA (pulsed at 1 ms, 10%
duty cycle maximum)
Data + 15%
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Only one absolute maximum rating can be applied at any
one time.
ESD CAUTION
−40°C to +125°C
−65°C to +150°C
150°C
112.6°C/W
30.4°C/W
260(+0/−5)°C
1
Overvoltages at the INx, Sx, and Dx pins are clamped by internal diodes.
Limit current to the maximum ratings given.
2
See Table 5.
Rev. A | Page 8 of 20
ADG5412/ADG5413
VSS 2
TOP VIEW 12 NC
(Not to Scale)
S4 6
11 S3
GND 5
D3
IN4 8
9
IN3
NC = NO CONNECT
S4 4
12 S2
ADG5412/
ADG5413
11 VDD
TOP VIEW
(Not to Scale)
9 S3
D4 5
10
GND 3
09202-002
D4 7
PIN 1
INDICATOR
S1 1
10 NC
NOTES
1. EXPOSED PAD TIED TO SUBSTRATE, VSS.
2. NC = NO CONNECT.
09202-003
VDD
ADG5412/
ADG5413
14 IN2
S2
13
VSS 4
13 D2
14
D3 8
D2
S1 3
15 IN1
IN2
15
IN3 7
16
D1 2
IN4 6
IN1 1
16 D1
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
Figure 3. LFCSP Pin Configuration
Figure 2. TSSOP Pin Configuration
Table 7. Pin Function Descriptions
TSSOP
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Pin No.
LFCSP
15
16
1
2
3
4
5
6
7
8
9
10
11
12
13
14
EP
Mnemonic
IN1
D1
S1
VSS
GND
S4
D4
IN4
IN3
D3
S3
NC
VDD
S2
D2
IN2
Exposed Pad
Description
Logic Control Input 1.
Drain Terminal 1. This pin can be an input or output.
Source Terminal 1. This pin can be an input or output.
Most Negative Power Supply Potential.
Ground (0 V) Reference.
Source Terminal 4. This pin can be an input or output.
Drain Terminal 4. This pin can be an input or output.
Logic Control Input 4.
Logic Control Input 3.
Drain Terminal 3. This pin can be an input or output.
Source Terminal 3. This pin can be an input or output.
No Connection.
Most Positive Power Supply Potential.
Source Terminal 2. This pin can be an input or output.
Drain Terminal 2. This pin can be an input or output.
Logic Control Input 2.
The exposed pad is connected internally. For increased reliability of the solder joints
and maximum thermal capability, it is recommended that the pad be soldered to the
substrate, VSS.
Table 8. ADG5412 Truth Table
INx
1
0
Switch Condition
On
Off
Table 9. ADG5413 Truth Table
INx
0
1
S1, S4
Off
On
S2, S3
On
Off
Rev. A | Page 9 of 20
ADG5412/ADG5413
TYPICAL PERFORMANCE CHARACTERISTICS
16
14
ON RESISTANCE (Ω)
10
8
VDD10
= +13.5V
VSS = –13.5V
6
VDD = +16.5V
VSS = –16.5V
VDD = +15V
VSS = –15V
TA = 25°C
10
VDD = +11V
VSS = –11V
12
ON RESISTANCE (Ω)
12
VDD = +10V
VDD = +9V VSS = –10V
VSS = –9V
TA = 25°C
VDD = 36V
VSS = 0V
VDD = 32.4V
VSS = 0V
8
6
VDD = 39.6V
VSS = 0V
4
4
–10
–5
0
5
10
15
20
VS, VD (V)
0
0
5
10
15
20
25
30
35
40
45
09202-033
–15
09202-034
0
–20
15
09202-040
2
2
VS, VD (V)
Figure 4. RON as a Function of VS, VD (Dual Supply)
Figure 7. RON as a Function of VS, VD (Single Supply)
12
18
VDD = +18V
VSS = –18V
10
16
ON RESISTANCE (Ω)
ON RESISTANCE (Ω)
14
8
VDD = +20V
VSS = –20V
6
VDD = +22V
VSS = –22V
4
TA = +125°C
12
TA = +85°C
10
TA = +25°C
8
TA = –40°C
6
4
2
2
VDD = +15V
VSS = –15V
0
–15
–10
0
–25
–20
–15
–10
–5
0
5
10
15
20
25
VS, VD (V)
09202-035
TA = 25°C
10
Figure 8. RON as a Function of VS (VD) for Different Temperatures,
±15 V Dual Supply
VDD = 10.8V
VSS = 0V
14
ON RESISTANCE (Ω)
12
15
VDD = 11V
VSS = 0V
VDD = 12V
VSS = 0V
VDD = 13.2V
VSS = 0V
TA = +125°C
10
TA = +85°C
8
TA = +25°C
6
TA = –40°C
4
5
0
0
2
4
6
8
10
12
VS, VD (V)
14
VDD = +20V
VSS = –20V
0
–20
–15
–10
–5
0
5
10
15
20
VS, VD (V)
Figure 9. RON as a Function of VS (VD) for Different Temperatures,
±20 V Dual Supply
Figure 6. RON as a Function of VS, VD (Single Supply)
Rev. A | Page 10 of 20
09202-041
2
09202-032
ON RESISTANCE (Ω)
VDD = +10V
VSS = 0V
VDD = +9V
VSS = 0V
10
5
16
TA = 25°C
20
0
VS, VD (V)
Figure 5. RON as a Function of VS, VD (Dual Supply)
25
–5
ADG5412/ADG5413
30
0.8
VDD = 12V
VSS = 0V
LEAKAGE CURRENT (nA)
25
ON RESISTANCE (Ω)
VDD = +20V
VSS = –20V
VBIAS = +15V/–15V
0.6
TA = +125°C
20
TA = +85°C
15
TA = +25°C
TA = –40°C
10
5
ID, IS (ON) + +
ID, IS (ON) – –
0.4
IS (OFF) + –
0.2
ID (OFF) – +
0
–0.2
IS (OFF) – +
–0.4
2
4
6
8
10
09202-042
12
VS, VD (V)
0
0.6
8
TA = +25°C
6
TA = –40°C
LEAKAGE CURRENT (nA)
4
2
0
10
5
15
20
30
25
35
40
VS, VD (V)
0.2
ID (OFF) – +
0
IS (OFF) – +
0
50
75
VDD = 36V
VSS = 0V
VBIAS = 1V/30V
0.6
LEAKAGE CURRENT (nA)
ID, IS (ON) – –
IS (OFF) + –
0.2
0
125
ID, IS (ON) + +
ID, IS (ON) – –
0.4
ID (OFF) – +
0.2
0
IS (OFF) + –
–0.2
IS (OFF) – +
ID (OFF) – +
–0.2
100
TEMPERATURE (°C)
ID, IS (ON) + +
0.4
25
Figure 14. Leakage Currents vs. Temperature, 12 V Single Supply
ID (OFF) + –
–0.4
IS (OFF) – +
ID (OFF) + –
–0.4
0
25
50
75
100
125
TEMPERATURE (°C)
09202-037
LEAKAGE CURRENT (nA)
ID, IS (ON) – –
IS (OFF) + –
0.8
VDD = +15V
VSS = –15V
VBIAS = +10V/–10V
0.6
0.4
–0.2
Figure 11. RON as a Function of VS (VD) for Different Temperatures,
36 V Single Supply
0.8
ID, IS (ON) + +
ID (OFF) + –
VDD = 36V
VSS = 0V
09202-043
0
125
–0.6
0
25
50
75
100
125
TEMPERATURE (°C)
Figure 15. Leakage Currents vs. Temperature, 36 V Single Supply
Figure 12. Leakage Currents vs. Temperature, ±15 V Dual Supply
Rev. A | Page 11 of 20
09202-039
ON RESISTANCE (Ω)
TA = +85°C
100
VDD = 12V
VSS = 0V
VBIAS = 1V/10V
14
10
75
Figure 13. Leakage Currents vs. Temperature, ±20 V Dual Supply
16
TA = +125°C
50
TEMPERATURE (°C)
Figure 10. RON as a Function of VS (VD) for Different Temperatures,
12 V Single Supply
12
25
09202-036
0
–0.6
09202-038
ID (OFF) + –
0
ADG5412/ADG5413
–10
–20
–30
–30
ACPSRR (dB)
–20
–60
NO DECOUPLING
CAPACITORS
–40
–50
–60
–70
–70
–80
–80
DECOUPLING
CAPACITORS
–90
–90
–100
1k
–100
1k
10k
100k
1M
10M
100M
1G
FREQUENCY (Hz)
10k
0.10
TA = 25°C
VDD = +15V
VSS = –15V
–30
0.07
–40
0.06
THD + N (%)
0.08
–50
–60
–80
0.02
–90
0.01
10M
100M
1G
FREQUENCY (Hz)
0
5
10
15
TA = 25°C
VDD = +15V
VSS = –15V
–0.5
400
–1.0
350
300
INSERTION LOSS (dB)
VDD = +20V
VSS = –20V
VDD = +36V
VSS = 0V
250
200
150
VDD = +15V
VSS = –15V
VDD = +12V
VSS = 0V
–1.5
–2.0
–2.5
–3.0
–3.5
–4.0
50
–4.5
–10
0
10
20
30
VS (V)
40
09202-030
CHARGE INJECTION (pC)
VDD = 20V, VSS = 20V, VS = 20V p-p
0
0
450
0
–20
VDD = 15V, VSS = 15V, VS = 15V p-p
Figure 20. THD + N vs. Frequency, ±15 V Dual Supply
TA = 25°C
100
VDD = 36V, VSS = 0V, VS = 18V p-p
FREQUENCY (MHz)
Figure 17. Crosstalk vs. Frequency, ±15 V Dual Supply
500
1G
0.04
0.03
1M
VDD = 12V, VSS = 0V, VS = 6V p-p
0.05
–70
100k
20
LOAD = 1kΩ
TA = 25°C
0.09
–20
–100
10k
10M
Figure 19. ACPSRR vs. Frequency, ±15 V Dual Supply
09202-028
CROSSTALK (dB)
–10
1M
FREQUENCY (Hz)
Figure 16. Off Isolation vs. Frequency, ±15 V Dual Supply
0
100k
09202-026
–50
TA = 25°C
VDD = +15V
VSS = –15V
09202-027
–40
09202-025
OFF ISOLATION (dB)
–10
0
TA = 25°C
VDD = +15V
VSS = –15V
09202-029
0
Figure 18. Charge Injection vs. Source Voltage
–5.0
1k
10k
100k
1M
10M
FREQUENCY (Hz)
Figure 21. Bandwidth
Rev. A | Page 12 of 20
100M
ADG5412/ADG5413
350
300
tON (12V)
tON (±20V)
tON (±15V)
200
tOFF (±15V)
tON (36V)
150
100
tOFF (12V)
tOFF (36V)
tOFF (±20V)
50
0
–40
–20
0
20
40
60
80
TEMPERATURE (°C)
100
120
09202-031
TIME (ns)
250
Figure 22. tON, tOFF Times vs. Temperature
Rev. A | Page 13 of 20
ADG5412/ADG5413
TEST CIRCUITS
IS (OFF)
Dx
Sx
Dx
ID (OFF)
A
A
VD
VS
VD
Figure 23. On Leakage
09202-015
VS
09202-016
Sx
A
ID (ON)
Figure 27. Off Leakage
VDD
VSS
0.1µF
0.1µF
AUDIO PRECISION
VDD
VSS
IDS
RS
Sx
INx
VS
V p-p
V1
Dx
09202-014
09202-024
GND
VS
RON = V1/IDS
Figure 24. On Resistance
VDD
Figure 28. THD + Noise
VSS
VDD
0.1µF
0.1µF
VSS
0.1µF
0.1µF
NETWORK
ANALYZER
VOUT
VDD
VSS
VDD
S1
RL
50Ω
VOUT
RL
1kΩ
Dx
Sx
RL
50Ω
S2
NETWORK
ANALYZER
VSS
50Ω
INx
VS
Dx
VS
VIN
GND
RL
50Ω
GND
VOUT
VS
09202-021
CHANNEL-TO-CHANNEL CROSSTALK = 20 log
INSERTION LOSS = 20 log
VDD
VSS
0.1µF
VDD
NETWORK
ANALYZER
VSS
Sx
INx
50Ω
50Ω
VS
Dx
VIN
RL
50Ω
GND
VOUT
OFF ISOLATION = 20 log
VOUT
VS
09202-020
0.1µF
VOUT WITH SWITCH
VOUT WITHOUT SWITCH
Figure 29. Bandwidth
Figure 25. Channel-to-Channel Crosstalk
Figure 26. Off Isolation
Rev. A | Page 14 of 20
VOUT
09202-023
Sx
Dx
VIN
ADG5412/ADG5413
VDD
VSS
VSS
D1
S2
D2
CL
35pF
RL
300Ω
CL
35pF
VOUT2
ADG5413
90%
90%
0V
90%
90%
0V
GND
tD
tD
Figure 30. Break-Before-Make Time Delay, tD
VDD
VSS
0.1µF
0.1µF
VIN
VDD
Sx
VS
ADG5412
50%
50%
VSS
VOUT
Dx
CL
35pF
RL
300Ω
INx
90%
VOUT
90%
GND
tOFF
tON
09202-018
IN1,
IN2
RL
300Ω
VOUT2
VOUT1
50%
Figure 31. Switching Times
RS
VS
VDD
VSS
VDD
VSS
Sx
Dx
VOUT
VIN
ADG5412
ON
OFF
CL
1nF
IN
VOUT
QINJ = CL × ∆VOUT
GND
Figure 32. Charge Injection
Rev. A | Page 15 of 20
∆VOUT
09202-019
VS2
VOUT1
50%
0V
09202-017
VDD
S1
VS1
VIN
0.1µF
0.1µF
ADG5412/ADG5413
TERMINOLOGY
IDD
IDD represents the positive supply current.
CIN
CIN is the digital input capacitance.
ISS
ISS represents the negative supply current.
tON
tON represents the delay between applying the digital control
input and the output switching on.
VD, VS
VD and VS represent the analog voltage on Terminal D and
Terminal S, respectively.
RON
RON represents the ohmic resistance between Terminal D and
Terminal S.
ΔRON
ΔRON represents the difference between the RON of any two
channels.
RFLAT (ON)
Flatness that is defined as the difference between the maximum
and minimum value of on resistance measured over the specified
analog signal range is represented by RFLAT (ON).
IS (Off)
IS (Off) is the source leakage current with the switch off.
ID (Off)
ID (Off) is the drain leakage current with the switch off.
ID (On), IS (On)
ID (On) and IS (On) represent the channel leakage currents with
the switch on.
VINL
VINL is the maximum input voltage for Logic 0.
tOFF
tOFF represents the delay between applying the digital control
input and the output switching off.
tD
tD represents the off time measured between the 80% point of
both switches when switching from one address state to
another.
Off Isolation
Off isolation is a measure of unwanted signal coupling through
an off switch.
Charge Injection
Charge injection is a measure of the glitch impulse transferred
from the digital input to the analog output during switching.
Crosstalk
Crosstalk is a measure of unwanted signal that is coupled
through from one channel to another as a result of parasitic
capacitance.
Bandwidth
Bandwidth is the frequency at which the output is attenuated
by 3 dB.
On Response
On response is the frequency response of the on switch.
VINH
VINH is the minimum input voltage for Logic 1.
Insertion Loss
Insertion loss is the loss due to the on resistance of the switch.
IINL, IINH
IINL and IINH represent the low and high input currents of the
digital inputs.
CD (Off)
CD (Off) represents the off switch drain capacitance, which is
measured with reference to ground.
CS (Off)
CS (Off) represents the off switch source capacitance, which is
measured with reference to ground.
Total Harmonic Distortion + Noise (THD + N)
The ratio of the harmonic amplitude plus noise of the signal to
the fundamental is represented by THD + N.
AC Power Supply Rejection Ratio (ACPSRR)
ACPSRR is the ratio of the amplitude of signal on the output to the
amplitude of the modulation. This is a measure of the ability of
the part to avoid coupling noise and spurious signals that appear
on the supply voltage pin to the output of the switch. The dc voltage
on the device is modulated by a sine wave of 0.62 V p-p.
CD (On), CS (On)
CD (On) and CS (On) represent on switch capacitances, which
are measured with reference to ground.
Rev. A | Page 16 of 20
ADG5412/ADG5413
TRENCH ISOLATION
In the ADG5412 and ADG5413, an insulating oxide layer
(trench) is placed between the NMOS and the PMOS transistors
of each CMOS switch. Parasitic junctions, which occur between
the transistors in junction isolated switches, are eliminated, and
the result is a completely latch-up proof switch.
PMOS
P-WELL
N-WELL
TRENCH
BURIED OXIDE LAYER
HANDLE WAFER
Figure 33. Trench Isolation
Rev. A | Page 17 of 20
09202-022
In junction isolation, the N and P wells of the PMOS and NMOS
transistors form a diode that is reverse-biased under normal
operation. However, during overvoltage conditions, this diode
can become forward-biased. A silicon controlled rectifier (SCR)
type circuit is formed by the two transistors causing a significant
amplification of the current that, in turn, leads to latch-up. With
trench isolation, this diode is removed, and the result is a latchup proof switch.
NMOS
ADG5412/ADG5413
APPLICATIONS INFORMATION
The ADG54xx family of switches and multiplexers provide a
robust solution for instrumentation, industrial, automotive,
aerospace, and other harsh environments that are prone to
latch-up, which is an undesirable high current state that can
lead to device failure and persists until the power supply is
turned off. The ADG5412/ADG5413 high voltage switches
allow single-supply operation from 9 V to 40 V and dual-supply
operation from ±9 V to ±22 V. The ADG5412/ADG5413 (as
well as other select devices within the same family) achieve an
8 kV human body model ESD rating, which provides a robust
solution eliminating the need for separate protect circuitry
designs in some applications.
Rev. A | Page 18 of 20
ADG5412/ADG5413
OUTLINE DIMENSIONS
5.10
5.00
4.90
16
9
4.50
4.40
4.30
6.40
BSC
1
8
PIN 1
1.20
MAX
0.15
0.05
0.30
0.19
0.65
BSC
COPLANARITY
0.10
0.20
0.09
0.75
0.60
0.45
8°
0°
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MO-153-AB
Figure 34. 16-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-16)
Dimensions shown in millimeters
PIN 1
INDICATOR
4.10
4.00 SQ
3.90
0.35
0.30
0.25
0.65
BSC
16
13
PIN 1
INDICATOR
12
1
EXPOSED
PAD
4
2.70
2.60 SQ
2.50
9
0.80
0.75
0.70
0.45
0.40
0.35
8
0.05 MAX
0.02 NOM
COPLANARITY
0.08
0.20 REF
SEATING
PLANE
5
BOTTOM VIEW
0.20 MIN
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
SECTION OF THIS DATA SHEET.
COMPLIANT TO JEDEC STANDARDS MO-220-WGGC.
08-16-2010-C
TOP VIEW
Figure 35. 16-Lead Lead Frame Chip Scale Package [LFCSP_WQ]
4 mm × 4 mm Body, Very Very Thin Quad
(CP-16-17)
Dimensions shown in millimeters
ORDERING GUIDE
Model 1
ADG5412BRUZ
ADG5412BRUZ-REEL7
ADG5412BCPZ-REEL7
ADG5413BRUZ
ADG5413BRUZ-REEL7
ADG5413BCPZ-REEL7
1
Temperature Range
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
Package Description
16-Lead Thin Shrink Small Outline Package [TSSOP]
16-Lead Thin Shrink Small Outline Package [TSSOP]
16-Lead Lead Frame Chip Scale Package [LFCSP_WQ]
16-Lead Thin Shrink Small Outline Package [TSSOP]
16-Lead Thin Shrink Small Outline Package [TSSOP]
16-Lead Lead Frame Chip Scale Package [LFCSP_WQ]
Z = RoHS Compliant Part.
Rev. A | Page 19 of 20
Package Option
RU-16
RU-16
CP-16-17
RU-16
RU-16
CP-16-17
ADG5412/ADG5413
NOTES
©2010–2011 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D09202-0-6/11(A)
Rev. A | Page 20 of 20