NEC NE76100 General purpose fet n-channel gaas mes fet Datasheet

DATA SHEET
GaAs MES FET
NE76184A
GENERAL PURPOSE FET N-CHANNEL GaAs MES FET
DESCRIPTION
NE76184A is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for
improved RF and DC performance reliability and uniformity. Its
excellent low noise and high associated gain make it suitable
for DBS, TVRO, GPS and another commercial systems.
PACKAGE DIMENSIONS
(Unit: mm)
1.78 ±0.2
0.5 TYP.
1
L
FEATURES
L
1.78 ±0.2
• Low noise figure & High associated gain
NF = 0.8 dB TYP., Ga = 12 dB TYP. at f = 4 GHz
ORDERING INFORMATION
SUPPLYING
FORM
NE76184A-SL
STICK
L = 1.7 mm MIN.
NE76184A-T1
NE76184A-T1A
Tape & reel
L = 1.0 ± 0.2 mm
4
L
LEAD LENGTH
L
3
0.5 TYP.
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
VDS
VGSO
VGDO
ID
Ptot
Tch
Tstg
5.0
V
–5.0
V
–6.0
V
100
mA
300
mW
150
˚C
–65 to +150 ˚C
0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
1.7 MAX.
PART NUMBER
J
2
1. Source
2. Drain
3. Source
4. Gate
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Gate to Source Leak Current
IGSO
–
–
10
µA
VGS = –5 V
Saturated Drain Current
IDSS
30
–
100
mA
VDS = 3 V, VGS = 0
VGS (off)
–0.5
–
–3.0
V
VDS = 3 V, ID = 100 µA
Transconductance
gm
20
45
–
mS
VDS = 3 V, ID = 10 mA
Noise Figure
NF
–
0.8
1.4
dB
Associated Gain
Ga
–
12
–
dB
Power Gain
Gs
–
6
–
dB
Gate to Source Cutoff Voltage
TEST CONDITIONS
VDD = 3 V
f = 4 GHz
ID = 10 mA
f = 12 GHz
IDSS rank is specified as follows. (K: 30 to 100 mA, N: 30 to 65 mA, M: 55 to 100 mA)
Document No. P10852EJ2V0DS00 (2nd edition)
(Previous No. TC-2303)
Data Published October 1995 P
Printed in Japan
©
1991
NE76184A
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
500
VGS = 0 V
400
ID - Drain Current - mA
Ptot - Total Power Dissipation - mW
80
300
200
60
–0.2 V
40
–0.4 V
–0.6 V
20
100
–0.8 V
–1.0 V
0
50
100
150
200
1
2
3
4
5
VDS - Drain to Source Voltage - V
TA - Ambient Temperature - ˚C
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
NOISE FIGURE, ASSOCIATED GAIN vs.
FREQUENCY
5
80
20
VDS = 3 V
ID = 10 mA
VDS = 3 V
NF - Noise Figure - dB
ID - Drain Current - mA
4
60
40
20
16
3
12
Ga
2
8
NF
1
4
0
–2.0
–1.0
VGS - Gate to Source Voltage - V
0
0
2
4
6
8 10 14
f - Frequency - GHz
2
30
Ga - Associated Gain - dB
0
NE76184A
NOISE FIGURE, ASSOCIATED GAIN vs.
RATIO OF DRAIN CURRENT AND
ZERO-GATE VOLTAGE CURRENT
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
3.0
2.5
12
2
MAG
|S21s|
8
14
Ga
2.0
12
1.5
10
1.0
8
NF
0.5
Ga - Associated Gain - dB
MSG
16
16
VDS = 3 V
f = 4 GHz
VDS = 3 V
ID = 10 mA
NF - Noise Figure - dB
MSG - Maximum Stable Gain - dB
MAG - Maximum Available Gain - dB
2
|S21s| - Forward Insertion Gain - dB
20
6
4
0
0
2
1
4
6
8 10 12
1
2
4
6 8 10
20
4
40 60 80 100
IDS/IDSS - Ratio of Drain Current and Zero-Gate
Voltage Current - %
20
f - Frequency - GHz
Gain Calculations
MSG =
MSG =
2
S 21
K=
S12
S 21 

2
 K ± K − 1

S 
2
1+ ∆ − S11 − S 22
2
2 S12 S 21
∆ = S11 ⋅ S 22 − S 21 ⋅ S12
12
OUTPUT POWER vs. INPUT POWER
VDS = 3 V, ID = 30 mA
fin = 11 GHz
Pout - Output Power - dBm
+15
+10
+5
0
–5
–10
–5
0
+5
+10
Pin - Input Power - dBm
3
NE76184A
S-PARAMETERS
V DS = 3 V, I D = 10 mA
START 500 MHz STOP 12 GHz STEP 500 MHz
S11
S12
1.0
90˚
0.5
2.0
135˚
45˚
3
0
2
0.5
∞
1.0
1
±180˚
0˚
0
2
0.1
3
0.2
0.3
–0.5
1
–135˚
–2.0
–45˚
0.4
–1.0
0.5
–90˚
S21
S22
90˚
1.0
0.5
135˚
2.0
45˚
1
±180˚
0.5 0.4 0.3 0.2 0.1
0
2
0˚
0
0.5 3
∞
1.0
3
2
1
–135˚
–45˚
–2.0
–0.5
–90˚
–1.0
Marker
1. 4 GHz
2. 8 GHz
3. 12 GHz
4
NE76184A
S-PARAMETER
MAG. AND ANG.
V DS = 3 V, I D = 10 mA
FREQUENCY
MHz
MAG.
S11
ANG.
MAG.
S21
ANG.
MAG.
S12
ANG.
MAG.
S22
ANG.
500.0000
1000.0000
1500.0000
2000.0000
2500.0000
3000.0000
3500.0000
4000.0000
4500.0000
5000.0000
5500.0000
6000.0000
6500.0000
7000.0000
7500.0000
8000.0000
8500.0000
9000.0000
9500.0000
10000.0000
10500.0000
11000.0000
11500.0000
12000.0000
0.993
0.971
0.936
0.896
0.850
0.808
0.761
0.720
0.681
0.647
0.615
0.588
0.566
0.547
0.531
0.517
0.503
0.492
0.482
0.475
0.475
0.477
0.481
0.489
–14.4
–28.4
–41.9
–54.8
–67.4
–79.4
–91.3
–102.7
–113.9
–124.4
–134.9
–144.8
–154.5
–163.6
–172.4
178.7
169.6
160.5
151.1
141.3
131.5
121.6
112.1
102.7
3.919
3.820
3.714
3.562
3.388
3.238
3.069
2.909
2.765
2.623
2.485
2.365
2.252
2.151
2.064
1.985
1.909
1.843
1.783
1.726
1.668
1.613
1.554
1.503
166.5
153.5
140.9
129.0
117.8
107.0
96.4
86.4
77.0
67.9
59.1
50.7
42.6
34.7
27.3
19.6
12.2
5.0
–2.5
–9.6
–17.0
–23.8
–31.0
–38.0
0.022
0.042
0.061
0.079
0.092
0.103
0.112
0.120
0.125
0.127
0.131
0.131
0.133
0.135
0.136
0.139
0.141
0.143
0.148
0.152
0.156
0.160
0.165
0.170
80.3
71.6
62.0
54.1
46.4
39.9
33.5
27.5
22.2
17.6
13.6
9.6
6.5
3.7
1.9
–0.8
–3.0
–5.3
–7.3
–9.4
–11.3
–13.8
–16.2
–18.8
0.716
0.702
0.682
0.652
0.623
0.592
0.563
0.533
0.501
0.475
0.454
0.437
0.425
0.418
0.414
0.415
0.418
0.418
0.417
0.419
0.418
0.421
0.431
0.441
–9.9
–19.1
–28.2
–36.8
–44.8
–52.6
–60.9
–68.1
–75.7
–83.5
–91.4
–98.9
–107.1
–114.4
–121.8
–129.3
–136.4
–143.7
–151.0
–158.4
–166.4
–174.2
177.3
169.6
V DS = 3 V, I D = 30 mA
FREQUENCY
MHz
MAG.
S11
ANG.
MAG.
S21
ANG.
MAG.
S12
ANG.
MAG.
S22
ANG.
500.0000
1000.0000
1500.0000
2000.0000
2500.0000
3000.0000
3500.0000
4000.0000
4500.0000
5000.0000
5500.0000
6000.0000
6500.0000
7000.0000
7500.0000
8000.0000
8500.0000
9000.0000
9500.0000
10000.0000
10500.0000
11000.0000
11500.0000
12000.0000
0.990
0.957
0.911
0.860
0.805
0.755
0.707
0.663
0.626
0.594
0.566
0.546
0.528
0.513
0.501
0.490
0.480
0.472
0.466
0.465
0.468
0.476
0.483
0.494
–16.6
–32.6
–47.6
–62.0
–75.5
–88.4
–100.7
–112.5
–124.0
–134.8
–145.4
–155.4
–165.1
–174.3
176.9
167.9
158.9
149.8
140.6
130.8
121.2
112.0
102.7
93.9
5.304
5.115
4.866
4.587
4.282
4.009
3.741
3.493
3.275
3.078
2.888
2.729
2.581
2.455
2.344
2.242
2.151
2.069
1.997
1.924
1.855
1.791
1.727
1.665
165.1
150.9
137.4
124.8
113.3
102.5
92.1
82.3
73.3
64.5
56.2
48.2
40.6
33.0
25.8
18.5
11.3
4.2
–2.7
–9.7
–16.8
–23.4
–30.4
–37.2
0.019
0.037
0.052
0.065
0.075
0.085
0.092
0.097
0.103
0.107
0.110
0.114
0.118
0.122
0.128
0.133
0.139
0.147
0.153
0.161
0.168
0.175
0.182
0.189
79.5
71.5
62.3
55.0
48.7
42.9
38.2
33.6
30.2
26.7
23.3
21.3
18.6
17.1
14.8
13.1
10.6
7.6
5.5
2.2
–0.6
–4.6
–7.6
–10.6
0.617
0.599
0.577
0.545
0.515
0.485
0.456
0.431
0.404
0.382
0.365
0.351
0.343
0.339
0.340
0.343
0.350
0.350
0.352
0.355
0.357
0.363
0.373
0.385
–10.3
–19.9
–28.9
–37.4
–44.9
–52.1
–59.4
–66.6
–73.7
–81.2
–88.5
–96.3
–104.1
–111.7
–119.3
–126.8
–133.8
–141.3
–148.9
–156.2
–165.0
–173.1
178.2
169.9
5
NE76184A
AMP PARAMETERS
V DS = 3 V, I D = 10 mA
FREQUENCY
MHz
GUmax.
dB
500.0000
1000.0000
1500.0000
2000.0000
2500.0000
3000.0000
3500.0000
4000.0000
4500.0000
5000.0000
5500.0000
6000.0000
6500.0000
7000.0000
7500.0000
8000.0000
8500.0000
9000.0000
9500.0000
10000.0000
10500.0000
11000.0000
11500.0000
12000.0000
33.77
27.00
23.21
20.48
18.30
16.68
15.16
13.90
12.80
11.84
10.97
10.24
9.59
9.03
8.55
8.13
7.72
7.35
7.00
6.69
6.39
6.12
5.86
5.67
GAmax.
dB
|S21|2
dB
|S12|2
dB
K
Delay
ns
Mason’s U
dB
G1
dB
G2
dB
–33.16
–27.43
–24.28
–22.09
–20.74
–19.78
–18.99
–18.42
–18.06
–17.91
–17.68
–17.62
–17.50
–17.40
–17.35
–17.13
–17.05
–16.87
–16.60
–16.38
–16.16
–15.89
–15.67
–15.37
0.07
0.14
0.23
0.30
0.37
0.43
0.50
0.57
0.64
0.72
0.79
0.86
0.92
0.98
1.03
1.05
1.09
1.12
1.14
1.15
1.16
1.16
1.16
1.14
0.072
0.072
0.070
0.066
0.062
0.060
0.059
0.056
0.052
0.051
0.049
0.046
0.045
0.044
0.041
0.042
0.041
0.040
0.042
0.040
0.041
0.038
0.040
0.039
49.375
10.85
10.17
9.49
8.99
8.57
8.20
7.84
7.58
7.31
7.19
11.86
11.64
11.40
11.03
10.60
10.21
9.74
9.28
8.83
8.38
7.91
7.48
7.05
6.65
6.29
5.95
5.62
5.31
5.02
4.74
4.44
4.16
3.83
3.54
29.663
28.208
25.690
25.762
24.501
23.383
21.885
20.810
20.093
18.766
18.307
17.776
17.422
17.410
16.680
16.073
15.587
14.945
14.161
13.620
12.913
12.582
18.78
12.40
9.10
7.04
5.57
4.60
3.76
3.17
2.71
2.35
2.06
1.84
1.67
1.54
1.44
1.35
1.27
1.20
1.15
1.11
1.11
1.12
1.14
1.19
3.13
2.95
2.72
2.41
2.14
1.88
1.66
1.45
1.25
1.11
1.00
0.92
0.86
0.84
0.82
0.82
0.83
0.84
0.83
0.84
0.83
0.85
0.89
0.94
GAmax.
dB
|S21|2
dB
|S12|2
dB
K
Delay
ns
Mason’s U
dB
G1
dB
G2
dB
12.13
11.34
10.79
10.29
9.85
9.48
9.10
8.81
8.50
8.33
8.15
8.02
14.49
14.18
13.74
13.23
12.63
12.06
11.46
10.86
10.30
9.76
9.21
8.72
8.24
7.80
7.40
7.01
6.65
6.32
6.01
5.68
5.37
5.06
4.75
4.43
–34.36
–28.71
–25.66
–23.68
–22.51
–21.42
–20.70
–20.27
–19.73
–19.43
–19.15
–18.90
–18.55
–18.25
–17.85
–17.50
–17.17
–16.68
–16.32
–15.87
–15.51
–15.16
–14.80
–14.48
0.09
0.19
0.29
0.38
0.47
0.55
0.63
0.72
0.79
0.87
0.94
1.00
1.04
1.08
1.09
1.10
1.12
1.11
1.11
1.10
1.10
1.09
1.07
1.05
0.079
0.079
0.075
0.070
0.064
0.060
0.058
0.054
0.050
0.048
0.047
0.044
0.042
0.042
0.040
0.040
0.040
0.039
0.039
0.039
0.039
0.037
0.039
0.038
38.817
41.142
31.251
29.809
27.934
27.066
26.502
24.356
24.031
22.392
20.841
20.194
19.396
19.008
18.783
18.372
17.707
17.361
16.512
16.047
15.174
14.844
14.143
13.483
17.17
10.77
7.71
5.84
4.53
3.67
3.00
2.51
2.16
1.89
1.68
1.54
1.42
1.33
1.26
1.19
1.14
1.10
1.07
1.06
1.07
1.11
1.16
1.22
2.08
1.93
1.75
1.53
1.34
1.16
1.01
0.89
0.77
0.69
0.62
0.57
0.54
0.53
0.53
0.55
0.57
0.57
0.57
0.59
0.59
0.61
0.65
0.70
V DS = 3 V, I D = 30 mA
6
FREQUENCY
MHz
GUmax.
dB
500.0000
1000.0000
1500.0000
2000.0000
2500.0000
3000.0000
3500.0000
4000.0000
4500.0000
5000.0000
5500.0000
6000.0000
6500.0000
7000.0000
7500.0000
8000.0000
8500.0000
9000.0000
9500.0000
10000.0000
10500.0000
11000.0000
11500.0000
12000.0000
33.74
26.88
23.20
20.60
18.51
16.90
15.48
14.27
13.24
12.34
11.51
10.83
10.19
9.66
9.16
8.75
8.35
7.98
7.65
7.33
7.03
6.79
6.55
6.34
NE76184A
NOISE PARAMETERS
<Γ opt. vs. frequency>
1.0
VDS = 3 V
ID = 10 mA
0.5
2.0
4
2
6
8
∞
1.0
0
10
12
14
–0.5
–2.0
–1.0
START 2 GHz, STOP 14 GHz, STEP 2 GHz
<Noise Parameter>
V DS = 3 V, I D = 10 mA
Γopt.
Freq.
(GHz)
NFMIN.
(dB)
Ga
(dB)
MAG.
ANG.(deg.)
2.0
0.65
16.0
0.75
37
0.52
4.0
0.80
12.2
0.66
78
0.42
6.0
1.25
10.3
0.56
124
0.33
8.0
1.75
8.5
0.49
166
0.20
10.0
2.10
7.6
0.47
–151
0.28
12.0
2.65
6.5
0.45
–112
0.49
14.0
3.20
5.5
0.46
–64
0.56
Rn /50
7
NE76184A
RECOMMENDED SOLDERING CONDITIONS
The following conditions (see table below) must be met when soldering this product.
Please consult with our sales offices in case other soldering process is used, or in case soldering is done
under different conditions.
<TYPES OF SURFACE MOUNT DEVICE>
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL”
(IEI-1207).
Soldering
process
Soldering conditions
Symbol
Infrared ray reflow
Peak package’s surface temperature: 230 ˚C or below,
Reflow time: 30 seconds or below (210 ˚C or higher),
Number of reflow process: 1, Exposure limit*: None
IR30-00
Partial heating method
Terminal temperature: 230 ˚C or below,
Flow time: 10 seconds or below,
Exposure limit*: None
* Exposure limit before soldering after dry-pack package is opened.
Storage conditions: 25 ˚C and relative humidity at 65 % or less.
Note Do not apply more than a single process at once, except for “Partial heating method”.
PRECAUTION Avoid high static voltage and electric fields, because this device is MES FET with GaAs shottky
barrier gate.
Caution
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the Japanese law concerned.
Keep the Japanese law concerned and so on, especially in case of removal.
8
NE76184A
[MEMO]
9
NE76184A
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11