LRC LRB520S-30T1 Schottky barrier diode Datasheet

LESHAN RADIO COMPANY, LTD.
SCHOTTKY BARRIER DIODE
LRB520S-30T1
zApplications
Low current rectification and high speed switching
zFeatures
1
Extremelysmall surface mounting type. (SC-79/SOD523)
Low IR.(IR=0.1mA Typ.)
High reliability.
2
Pb-Free package is available.
SOD523/SC-79
zConstruction
Silicon epitaxial planar
1
Cathode
DEVICE MARKING AND ORDERING INFORMATION
Device
LRB520S-30T1
LRB520S-30T1G
Marking
2
Anode
Shipping
5J
3000/Tape&Reel
5J
(Pb-Free)
3000/Tape&Reel
MAXIMUM RATINGS (TA = 25°C)
Parameter
DC reverse voltage
Mean rectifying current
Symbol
VR
IO
Peak forward surge current
Limits
Unit
30
200
V
mA
IFSM
1
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
-40~+125
°C
ELECTRICAL CHARACTERISTICS(TA = 25°C)
Parameter
Forward voltage
Symbol
VF
Min.
Typ
Max.
Unit
-
-
0.60
V
Conditions
IF=200mA
Reverse current
IR
-
-
1.0
µA
VR=10V
LRB520S-30T1 –1/3
LESHAN RADIO COMPANY, LTD.
LRB520S-30T1
Electricalcharacteristiccurves(Ta=25OC)
1
1m
o
Ta=125 C
100
REVERSE CURRENT : I (A)
R
-25 o
C
25 o
C
=1
1m
75 o
C
25 o
C
10m
Ta
FORWARD CURRENT:IF(A)
100m
1
25oC
100n
100
10
1
75oC
10
-25oC
10n
1n
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
10
20
30
REVERSE VOLTAGE: VR(V)
FORWARD VOLTAGE : VF(V)
Fig. 1 Forward characteristics
Fig. 2 Reverse characteristics
100
100
80
Io CURRENT (%)
CAPACITANCE BETWEEN TERMINALS : CT(pF)
f=1MHz
10
60
40
20
1
0
10
20
0
0
30
25
50
75
100
125
o
REVERSE VOLTAGE : VR(V)
AMBIENT TEMPERATURE : Ta ( C)
Fig. 3 Capacitance between terminals characteristics
Fig 4. Derating curve
(mounting on glass epoxy PCBs)
LRB520S-30T1 –2/3
LESHAN RADIO COMPANY, LTD.
LRB520S-30T1
SC-79/SOD-523
A
C
HE
V M A
0.5
0
D
A
1mm
scale
E b
p
DIMENSIONS(mmaretheoriginaldimensions)
UNIT
A
bp
c
D
E
HE
V
mm
0.7
0.5
0.35
0.25
0.2
0.1
1.3
1.1
0.9
0.7
1.7
1.5
0.15
Note
1.Themarkingbarindicatesthecathode.
OUTLINE
VERSION
SOD523
REFERENCES
IEC
JEDEC
EIAJ
SC-79
EUROPEAN
PROJECTION
ISSUEDATE
98-11-25
LRB520S-30T1 –3/3
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