Diodes DMC2038LVT Complementary pair enhancement mode mosfet Datasheet

DMC2038LVT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Features
Description









This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
Mechanical Data
Device
BVDSS
Q1
20V
Q2
-20V
RDS(ON)
ID
TA = +25°C
35mΩ @ VGS = 4.5V
4.5A
56mΩ @ VGS = 1.8V
3.5A
74mΩ @ VGS = -4.5V
-3.1A
168mΩ @ VGS = -1.8V
-2.0A
ideal for high efficiency power management applications.


Applications






Motor Control
Power Management Functions
DC-DC Converters
Backlighting


Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Case: TSOT26
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals  Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections Indicator: See Diagram
Weight: 0.013 grams (Approximate)
Q1
TSOT26
Q2
D1
G1
1
6
D1
S2
2
5
S1
G2
3
4
D2
D2
G1
Top View
Pin Configuration
Top View
G2
S1
S2
N-Channel
P-Channel
Ordering Information (Note 5)
Part Number
DMC2038LVT-7
DMC2038LVTQ-7
Notes:
Compliance
Standard
Automotive
Case
TSOT26
TSOT26
Packaging
3000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to https://www.diodes.com/quality/product-compliance-definitions/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
31C
Date Code Key
Year
Code
Month
Code
2017
E
Jan
1
2018
F
Feb
2
DMC2038LVT
Document number: DS35417 Rev. 7 - 2
Mar
3
31C = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: E = 2017)
M = Month (ex: 9 = September)
YM
NEW PRODUCT
Product Summary
2019
G
Apr
4
May
5
2020
H
Jun
6
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2021
I
Jul
7
Aug
8
2022
J
Sep
9
Oct
O
2023
K
Nov
N
Dec
D
November 2017
© Diodes Incorporated
DMC2038LVT
Maximum Ratings N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
NEW PRODUCT
Symbol
Value
Unit
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±12
V
A
Continuous Drain Current (Note 6) VGS = 4.5V
Continuous Drain Current (Note 7) VGS = 4.5V
Steady
State
TA = +25°C
TA = +70°C
ID
3.7
3.0
t<10s
TA = +25°C
TA = +70°C
ID
4.1
3.2
A
Steady
State
TA = +25°C
TA = +70°C
ID
4.5
3.6
A
t<10s
TA = +25°C
TA = +70°C
ID
5.2
4.2
A
IS
1.5
A
IDM
25
A
Value
Unit
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Ratings P-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±12
V
A
Continuous Drain Current (Note 6) VGS = -4.5V
Continuous Drain Current (Note 7) VGS = -4.5V
Steady
State
TA = +25°C
TA = +70°C
ID
-2.6
-2.1
t<10s
TA = +25°C
TA = +70°C
ID
-2.9
-2.4
A
Steady
State
TA = +25°C
TA = +70°C
ID
-3.1
-2.5
A
t<10s
TA = +25°C
TA = +70°C
ID
-3.8
-3.0
A
IS
-1.5
A
IDM
-17
A
Value
Units
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Symbol
TA = +25°C
TA = +70°C
Steady State
t<10s
TA = +25°C
TA = +70°C
Steady State
t<10s
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Notes:
PD
RJA
PD
0.8
0.5
168
120
1.1
0.7
RθJA
114
72
RθJC
39
TJ, TSTG
-55 to +150
W
°C/W
W
°C/W
°C
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
DMC2038LVT
Document number: DS35417 Rev. 7 - 2
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DMC2038LVT
Electrical Characteristics N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Min
Typ
Max
Unit
Test Condition
BVDSS
20
—
—
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current @TC = +25°C
IDSS
—
—
1.0
μA
VDS = 16V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±100
nA
VGS = ±12V, VDS = 0V
VGS(TH)
0.4
—
1.0
V
VDS = VGS, ID = 250μA
—
27
35
—
33
43
—
43
56
Drain-Source Breakdown Voltage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
RDS(ON)
VGS = 4.5V, ID = 4.0A
mΩ
VGS = 2.5V, ID = 2.5A
VGS = 1.8V, ID = 1.5A
Forward Transfer Admittance
|Yfs|
—
9
—
S
VDS = 5V, ID = 3.4A
Diode Forward Voltage
VSD
0.4
—
1.1
V
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 9)
Ciss
—
400
530
pF
Output Capacitance
Coss
—
70
90
pF
Reverse Transfer Capacitance
Crss
—
65
100
pF
Gate Resistance
Rg
—
1.9
—
Ω
Total Gate Charge (VGS = 4.5V)
Qg
—
5.7
—
nC
Total Gate Charge (VGS = 10V)
Qg
—
12
17
nC
Gate-Source Charge
Qgs
—
0.7
—
nC
Input Capacitance
Qgd
—
1.4
—
nC
tD(ON)
—
5
10
ns
Turn-On Rise Time
tR
—
8
16
ns
Turn-Off Delay Time
tD(OFF)
—
25
40
ns
tF
—
8
16
ns
Gate-Drain Charge
Turn-On Delay Time
Turn-Off Fall Time
Notes:
VDS = 10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 15V, ID = 5.8A
VDS = 10V, VGS = 4.5V,
RG = 6Ω, IDS = 1A
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
30
20
VGS=10V
TA = -55C
VDS= 5.0V
VGS=4.5V
25
TA = 85C
VGS =3.0V
VGS =4.0V
20
VGS =3.5V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
NEW PRODUCT
Symbol
VGS =2.5V
15
VGS=2.0V
10
TA = 150C
15
TA = 25C
TA = 125C
10
5
5
VGS=1.5V
0
0
0.5
1
1.5
0
2
VDS, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
DMC2038LVT
Document number: DS35417 Rev. 7 - 2
0
0.5
1
1.5
2
2.5
3
VGS, GATE SOURCE VOLTAGE(V)
Fig. 2 Typical Transfer Characteristics
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RDS(ON), DRAIN-SOURCE ON-RESISTANCE()
0.07
0.06
0.05
VGS = 1.8V
0.04
VGS = 2.5V
0.03
VGS = 4.5V
0.02
0.01
0
0
5
10
15
ID, DRAIN SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.7
1.5
1.3
1.1
0.9
0.7
-25
0
25
50
75
100
125
0.08
VGS= 4.5V
150
TA = 85C
TA = 25C
0.02
TA = -55C
0
0
4
8
12
16
ID, DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
20
0.06
VGS=5V
ID=5A
0.05
0.04
0.03
VGS=10V
ID=10A
0.02
0.01
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 6 On-Resistance Variation with Temperature
20
)V
(E
G
A
T
L
O
1
V
D
L
O
H
S
E
R
H
T
E 0.5
T
A
G
,H
)
18
IS, SOURCE CURRENT (A)
1.5
ID =250µA
TA = 125 C
0.04
TJ, JUNCTION TEMPERATURE (C)
Fig. 5 On-Resistance Variation with Temperature
ID =1mA
TA = 150C
0.06
20
R DS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Normalized)
RDS(ON),DRAIN-SOURCE ON-RESISTANCE()
0.08
0.5
-50
VGS(TH), GATE THRESHOLD VOLTAGE (V)
NEW PRODUCT
DMC2038LVT
16
14
TA= 25C
12
10
8
6
4
T
(S
G
2
V
0
-50
-25
0
25
50
75 100 125 150
T A, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
DMC2038LVT
Document number: DS35417 Rev. 7 - 2
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0
0.2
0.4
0.6
0.8
1
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.4
November 2017
© Diodes Incorporated
DMC2038LVT
10
1000
VGS, GATE-SOURCE VOLTAGE (V)
CT, JUNCTION CAPACITANCE (pF)
Ciss
)
F
p
(
E
C
N
A
T
IC
A
P
A 100
C
N
O
IT
C
N
U
J
,T
C
Coss
Crss
8
VDS=15V
6
4
2
0
10
0
5
10
15
VDS , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
20
0
2
4
6
8
10
12
Qg , TOTAL GATE CHARGE (nC)
Fig. 10 Gate-Charge Characteristics
14
100
RDSON)
Limited
)A 10
(
T
N
E
R
R
DC
U
1
C
PW = 10s
N
PW = 1s
I
A
PW= 100ms
R
D
PW = 10ms
,D
PW = 1ms
0.1
I
TJ(max) = 150°C
P = 100µs
ID, DRAIN CURRENT (A)
W
TA= 25°C
VGS = 10V
Single Pulse
0.01 DUT on 1 * MRP Board
0.1
1
10
VDS , DRAIN-SOURCE VOLTAGE (V)
Fig. 11 SOA, Safe Operation Area
100
1
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
f = 1MHz
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
0.01
D = 0.01
R
(t) =
= r(t)
r(t) ** R
RθJA
RθJA
JA(t)
JA
R
= 164℃/W
164癈 /W
RθJA
JA =
Duty Cycle,
Cycle, D
D == t1/
t1 /t2t2
Duty
D = 0.005
Single Pulse
0.001
0.00001
0.0001
DMC2038LVT
Document number: DS35417 Rev. 7 - 2
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
t1, PULSE DURATION TIME (sec)
Fig. 12 Transient Thermal Resistance
Fig. 12 Transient Thermal Resistance
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DMC2038LVT
Electrical Characteristics P-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Symbol
Min
Typ
BVDSS
-20
—
—
V
VGS = 0V, ID = -250μA
IDSS
—
—
-1.0
μA
VDS = -16V, VGS = 0V
IGSS
—
—
±100
nA
VGS = ±12V, VDS = 0V
VGS(TH)
-0.4
—
-1.0
V
VDS = VGS, ID = -250μA
—
57
74
—
76
110
—
102
168
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @TC = +25°C
Unit
Test Condition
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
RDS(ON)
VGS = -4.5V, ID = -3.0A
mΩ
VGS = -2.5V, ID = -1.5A
VGS = -1.8V, ID = -1.0A
Forward Transfer Admittance
|Yfs|
—
10
—
S
VDS = -5V, ID = -3.0A
Diode Forward Voltage
VSD
—
-0.8
-1.0
V
VGS = 0V, IS = -0.6A
Ciss
—
530
705
pF
Output Capacitance
Coss
—
70
95
pF
Reverse Transfer Capacitance
Crss
—
60
90
pF
Gate Resistance
Rg
—
72
—
Ω
7
10
nC
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Qg
—
Total Gate Charge (VGS = -10V)
Qg
—
14
—
nC
Gate-Source Charge
Qgs
—
0.95
—
nC
Gate-Drain Charge
Qgd
—
1.2
—
nC
Turn-On Delay Time
tD(ON)
—
11
20
ns
Turn-On Rise Time
tR
—
12
22
ns
Turn-Off Delay Time
tD(OFF)
—
21
34
ns
tF
—
13
23
ns
Total Gate Charge (VGS = -4.5V)
Turn-Off Fall Time
Notes:
VDS = -10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = -15V, ID = -6A
VDS = -10V, VGS = -4.5V,
RG = 6Ω, IS = -1A
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
20
20
-VGS=10V
VDS = -5.0V
15
-VGS=4.0V
CURRENT (A)
DRAIN CURRENT
(A)
I--IDD, DRAIN
-VGS=4.5V
-ID, DRAIN CURRENT (A)
NEW PRODUCT
Gate-Source Leakage
Max
-VGS=3.0V
-VGS=2.5V
-VGS=3.5V
10
-VGS=2.0V
5
15
10
5
-VGS=1.5V
0
0
0
0.5
1
1.5
2
-V DS, DRAIN -SOURCE VOLTAGE(V)
Fig. 13 Typical Output Characteristics
DMC2038LVT
Document number: DS35417 Rev. 7 - 2
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0
0.5 1 1.5 2 2.5 3 3.5 4 4.5
-VGS, GATE SOURCE VOLTAGE(V)
Fig. 14 Typical Transfer Characteristics
5
November 2017
© Diodes Incorporated
RDS(ON), DRAIN-SOURCE ON-RESISTANCE()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.16
0.12
VGS = -1.8V
VGS = -2.5V
0.08
VGS = -4.5V
0.04
0.20
5
10
15
-ID, DRAIN SOURCE CURRENT (A)
Fig. 15 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.16
0.14
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50
TA = 150C
0.12
TA = 125C
0.1
0.08
TA = 85 C
0.06
TA = 25 C
0.04
TA = -55C
0.02
0
20
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Normalized)
0
-4.5V
DS= =
VV
4.5V
GS
0.18
0
0
4
8
12
16
-ID, DRAIN SOURCE CURRENT (A)
Fig. 16 Typical On-Resistance vs.
Drain Current and Temperature
20
0.14
0.12
-VGS=5V
-ID=5A
0.1
0.08
0.06
-VGS=10V
-ID=10A
0.04
0.02
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE ( C)
Fig. 17 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 18 On-Resistance Variation with Temperature
20
1.5
18
-IS, SOURCE CURRENT (A)
-VGS(TH), GATE THRESHOLD VOLTAGE(V)
NEW PRODUCT
DMC2038LVT
1
0.5
16
14
12
10
8
6
4
2
0
-50
-25
0
25
50
75 100 125 150
C))
TA, AMBIENT TEMPERATURE (°
(癈
Fig. 19 Gate Threshold Variation vs. Ambient Temperature
DMC2038LVT
Document number: DS35417 Rev. 7 - 2
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0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 20 Diode Forward Voltage vs. Current
1.6
November 2017
© Diodes Incorporated
DMC2038LVT
10
1000
f = 1MHz
-VGS, GATE-SOURCE VOLTAGE (V)
CT, JUNCTION CAPACITANCE (pF)
Coss
Crss
5
10
15
-VDS , DRAIN-SOURCE VOLTAGE (V)
Fig. 21 Typical Junction Capacitance
6
Qg vs. VGS
4
2
0
0
10
0
8
20
2
4
6
8
10
12
14
Qg, TOTAL GATE CHARGE (nC)
Fig. 22 Gate-Charge Characteristics
16
100
RDS(ON)
)A 10
Limited
(
T
N
E
R
R
U
1
DC
C
N
PW= 10s
I
A
PW = 1s
R
D
PW = 100ms
,D
PW = 10ms
-I 0.1 T
PW = 1ms
J(max) = 150°C
-ID, DRAIN CURRENT (A)
TA = 25°C
PW = 100µs
VGS = -10V
Single Pulse
DUT on 1 * MRP Board
0.01
0.1
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 23 SOA, Safe Operation Area
100
1
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
Ciss
)
F
p
(
E
C
N
A
T
IC
A
P
A 100
C
N
O
IT
C
N
U
J
,T
C
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
0.01
D = 0.01
RRJA(t)
= r(t) * R JA
θJA(t) = r(t) * RθJA
RRθJA
=
164癈
/W
JA = 164℃/W
Duty
DutyCycle,
Cycle,DD==t1/
t1 t2
/ t2
D = 0.005
Single Pulse
0.001
0.00001
0.0001
DMC2038LVT
Document number: DS35417 Rev. 7 - 2
0.001
0.01
0.1
1
t1,
(sec)
t1,PULSE
PULSEDURATION
DURATIONTIMES
TIME (sec)
Fig.
Transient Thermal
Thermal Resistance
Resistance
Fig. 24
24 Transient
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DMC2038LVT
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
NEW PRODUCT
TSOT26
D
e1
01(4x)
E1/2
E/2
E1
c
E
Gauge Plane
0
L
01(4x)
b
e
L2
A2
A1
A
Seating Plane
Seating Plane
TSOT26
Dim
Min
Max
Typ
A
1.00


A1
0.010 0.100

A2
0.840 0.900

D
2.800 3.000 2.900
E
2.800 BSC
E1
1.500 1.700 1.600
b
0.300 0.450

c
0.120 0.200

e
0.950 BSC
e1
1.900 BSC
L
0.30
0.50

L2
0.250 BSC
θ
0°
8°
4°
θ1
4°
12°

All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
TSOT26
C
Dimensions Value (in mm)
C
0.950
X
0.700
Y
1.000
Y1
3.199
Y1
Y
X
DMC2038LVT
Document number: DS35417 Rev. 7 - 2
9 of 10
www.diodes.com
November 2017
© Diodes Incorporated
DMC2038LVT
IMPORTANT NOTICE
NEW PRODUCT
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
www.diodes.com
DMC2038LVT
Document number: DS35417 Rev. 7 - 2
10 of 10
www.diodes.com
November 2017
© Diodes Incorporated