MMBT5401 High Voltage PNP Transistors COLLECTOR 3 3 1 BASE 1 2 2 EMITTER WEITRON http://www.weitron.com.tw SOT-23 MMBT5401 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC=-1.0mAdc, VCE=-5.0Vdc) (IC=-10mAdc, VCE=-5.0Vdc) (IC=-50mAdc, VCE=-5.0Vdc) hFE Collector-Emitter Saturation Voltage (IC=-10mAdc, IB=-1.0mAdc) (IC=-50mAdc, IB=-5.0mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC=-10mAdc, IB=-1.0mAdc) (IC=-50mAdc, IB=-5.0mAdc) VBE(sat) 50 60 50 - - 240 - - -0.2 -0.5 Vdc -1.0 -1.0 Vdc SMALL-SIGNAL CHARACTERISTICS Collector-Gain-Bandwidth Product ( I C -10 mVdc, VCE=-10Vdc, f=100MHz) fT Output Capacitance ( VCB -10 Vdc, I E=0, f=1.0MHz) C obo Small Signal Current Gain ( I C -1.0 mVdc, V CE=-10Vdc, f=1.0kHz) h fe Noise Figure ( I C -200 uA dc, V CE=-5.0Vdc, Rs=10 , f=1.0kHz) NF WEITRON http://www.weitron.com.tw 100 40 300 MHz 6.0 PF 200 8.0 dB MMBT5401 hFE, NORMALIZED CURRENT GAIN 200 150 o TJ = 125 C 100 o TJ = 25 C 70 50 o TJ = 55 C 30 VCE = -1.0 V VCE = -5.0 V 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) FIG.1 DC Current Gain 1.0 0.9 o TJ= 25 C 0.8 IC = 1.0mA 0.7 IC = 10mA IC = 30mA IC = 100mA 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IB, BASE CURRENT ( mA ) FIG.2 Collector Saturation Region 1.0 3 10 10 o TJ= 25 C 2 0.9 IC = ICES VCE = 30 V V, VOLTAGE ( VOLTS ) IC, COLLECTOR CURRENT (uA) 10 1 o TJ = 125 C 10 0 o 10 10 10 TJ = 75 C -1 REVERSE o TJ = 25 C -2 0.8 0.7 0.6 VBE(SAT) @ IC/IB = 10 0.5 0.4 0.3 0.2 FORWARD VCE(SAT) @ IC/IB = 10 0.1 0 -3 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 VBE, BASE - EMITTER VOLTAGE (VOLTS) FIG.3 Temperature Coefficients WEITRON http//www.weitron.com.tw 0.6 0.7 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT ( mA ) FIG.4 " On " Voltages 50 100 TEMPERATURE COEFFICIENTS (mV / C) MMBT5401 2.5 o -30 V o + 8.8V 10.2V 1.5 3.0 k 100 1.0 RC Vin 0.5 VC Vout for VCE(sat) 0.25 uF 10 uS 0 RB INPUT PULSE -0.5 5.1 k tr, tf -1.0 VB V, Vin 10 nS 1N914 100 DUTY CYCLE = 1.0% -1.5 for VBE(sat) -2.0 -2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 IC, COLLECTOR CURRENT ( mA ) VALUES SHOWN ARE FOR IC @ 10 mA FIG.5 Temperature Coefficients FIG.6 Switching Time Test Circuit 1000 100 o TJ= 25 C 70 700 50 500 30 300 Cibo 20 t, TIME ( nS ) C, CAPACITANCE ( pF ) VCC VBB o TJ= -55 C to 135 C 2.0 10 7.0 5.0 IC/IB = 10 o TJ= 25 C tr @ VCC = 120 V 200 tr @ VCC = 30 V 100 70 50 Cobo 3.0 30 2.0 20 1.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 td @ VBE(off) = 1.0 V VCC = 120 V 10 0.2 0.3 0.5 20 1.0 IC/IB = 10 o TJ= 25 C tf @ VCC = 120 V 1000 700 t, TIME ( nS ) tf @ VCC = 30 V 300 200 tf @ VCC = 120 V 100 70 50 30 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT ( mA ) FIG.9 Turn - Off Time WEITRON http//www.weitron.com.tw 20 30 FIG.8 Turn - On Time FIG.7 Capacitances 500 10 50 IC, COLLECTOR CURRENT ( mA ) VR, REVERSE VOLTAGE ( VOLTS ) 2000 2.0 3.0 5.0 50 100 200 100 200 MMBT5401 SOT-23 Package Outline Dimensions Unit:mm A B TOP VIEW E G Dim Min Max A 0.35 0.51 B 1.19 1.80 C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.60 L 0.30 0.61 M 0.076 0.25 C D H K J WEITRON http://www.weitron.com.tw L M