DISCRETE SEMICONDUCTORS DATA SHEET BLV10 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. BLV10 It has a 3/8” flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneautralized common-emitter class-B circuit MODE OF OPERATION VCE V f MHz PL W c.w. 13,5 175 8 > c.w. 12,5 175 8 typ. 10,5 η % GP dB PIN CONFIGURATION 9,0 > 70 zi Ω YL mS 2,8 + j1,2 76 − j16 − − typ. 75 PINNING PIN handbook, halfpage 1 2 4 DESCRIPTION 1 collector 2 emitter 3 base 4 emitter 3 MSB057 Fig.1 Simplified outline, SOT123. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August 1986 2 Philips Semiconductors Product specification VHF power transistor BLV10 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value VCESM max. 36 V Collector-emitter voltage (open base) VCEO max. 18 V Emitter-base voltage (open collector) VEBO max. 4 V Collector current (average) IC(AV) max. 1,5 A Collector current (peak value); f > 1 MHz ICM max. 4,0 A R.F. power dissipation (f > 1 MHz); Tmb = 25 °C Prf max. 20 W Storage temperature Tstg −65 to + 150 °C Operating junction temperature Tj max. 200 °C MGP248 1.75 IC handbook, halfpage MGP249 30 handbook, halfpage (A) 1.5 Ptot (W) ΙΙΙ 20 1.25 derate by 0.12 W/K Th = 70 °C ΙΙ Tmb = 25 °C 1 0.1 W/K 10 Ι 0.75 0.5 5 10 15 VCE (V) 20 0 0 50 Th (°C) I Continuous d.c. operation II Continuous r.f. operation III Short-time operation during mismatch Fig.2 D.C. SOAR. August 1986 Fig.3 3 R.F. power dissipation; VCE ≤ 16,5 V; f > 1 MHz. 100 Philips Semiconductors Product specification VHF power transistor BLV10 THERMAL RESISTANCE (dissipation = 8 W; Tmb = 72,4 °C, i.e. Th = 70 °C) From junction to mounting base (d.c. dissipation) Rth j-mb(dc) = 10,7 K/W From junction to mounting base (r.f. dissipation) Rth j-mb(rf) = 8,6 K/W From mounting base to heatsink Rth mb-h = 0,3 K/W CHARACTERISTICS Tj = 25 °C Collector-emitter breakdown voltage V(BR) CES > 36 V V(BR) CEO > 18 V V(BR)EBO > 4 V ICES < 2 mA open base ESBO > 0,5 mJ RBE = 10 Ω ESBR > 0,5 mJ VBE = 0; IC = 5 mA Collector-emitter breakdown voltage open base; IC = 25 mA Emitter-base breakdown voltage open collector; IE = 1 mA Collector cut-off current VBE = 0; VCE = 18 V Second breakdown energy; L = 25 mH; f = 50 Hz D.C. current gain(1) typ. IC = 0,75 A; VCE = 5 V hFE 40 10 to 100 Collector-emitter saturation voltage(1) IC = 2 A; IB = 0,4 A VCEsat typ. 0,85 V −IE = 0,75 A; VCB = 13,5 V fT typ. 950 MHz −IE = 2 A; VCB = 13,5 V fT typ. 850 MHz Cc typ. 16,5 pF IC = 100 mA; VCE = 13,5 V Cre typ. 12 pF Collector-flange capacitance Ccf typ. 2 pF Transition frequency at f = 100 MHz(1) Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 13,5 V Feedback capacitance at f = 1 MHz Note 1. Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0,02. August 1986 4 Philips Semiconductors Product specification VHF power transistor BLV10 MGP250 100 MGP251 40 handbook, halfpage handbook, halfpage hFE Cc (pF) 75 30 typ VCE = 13.5 V 50 20 5V 25 10 0 0 0 1 2 3 IC (A) 0 5 10 VCB (V) 15 Fig.5 IE = Ie = 0; f = 1 MHz; Tj = 25 °C. Fig.4 Typical values; Tj = 25 °C. MGP252 1250 handbook, full pagewidth fT (MHz) VCB = 13.5 V 1000 10 V 750 500 250 0 0 2 1 Fig.6 Typical values; f = 100 MHz; Tj = 25 °C. August 1986 5 −IE (A) 3 Philips Semiconductors Product specification VHF power transistor BLV10 APPLICATION INFORMATION R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit) Th = 25 °C f (MHz) VCE (V) PL (W) PS (W) 175 13,5 8 < 1,0 175 12,5 8 − GP (dB) > < 0,85 9,0 L4 C1 50 Ω L7 70 typ. 75 zi (Ω) YL (mS) 2,8 + j1,2 76 − j16 − − C6 50 Ω T.U.T. L3 L1 > − typ. 10,5 handbook, full pagewidth η (%) IC (A) C7 L5 C2 L2 C3 C4 C5 R1 L6 +VCC MGP253 Fig.7 Test circuit; c.w. class-B. List of components: C1 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004) C2 = C6 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008) C3 = 47 pF ceramic capacitor (500 V) C4 = 120 pF ceramic capacitor (500 V) C5 = 100 nF polyester capacitor C7 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011) L1 = 2 turns Cu wire (1,6 mm); int. dia. 4,5 mm; length 5,7 mm; leads 2 × 5 mm L2 = L6 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L3 = L4 = strip (12 mm × 6 mm); tap for C3 at 5 mm from transistor L5 = 3 turns Cu wire (1,6 mm); int. dia. 7,5 mm; length 7,5 mm; leads 2 × 5 mm L7 = 3 turns Cu wire (1,6 mm); int. dia. 6,5 mm; length 7,4 mm; leads 2 × 5 mm L3 and L4 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16". R1 = 10 Ω carbon resistor Component layout and printed-circuit board for 175 MHz test circuit see Fig.8. August 1986 6 Philips Semiconductors Product specification VHF power transistor BLV10 150 handbook, full pagewidth 72 L6 +VCC C4 C5 L5 L3 C1 C2 L4 L1 C6 L7 L2 R1 C7 C3 rivet MGP254 Fig.8 Component layout and printed-circuit board for 175 MHz test circuit. The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets. August 1986 7 Philips Semiconductors Product specification VHF power transistor BLV10 MGP255 15 handbook, halfpage MGP256 15 Th = 25 °C handbook, halfpage Gp PL (W) Gp (dB) 150 η (%) Th = 70 °C 25 °C 70 °C 10 10 100 25 °C η 5 70 °C 5 0 50 0 0 1 2 PS (W) 0 VCE = 13,5 V; − − − VCE = 12,5 V. 10 15 PL (W) VCE = 13,5 V; − − − VCE = 12,5 V. Fig.9 Typical values; f = 175 MHz; The transistor has been developed for use with unstabilized supply voltages. As the output power and drive power increase with the supply voltage, the nominal output power must be derated in accordance with the graph for safe operation at supply voltages other than the nominal. The graph shows the permissible output power under nominal conditions (VSWR = 1), as a function of the expected supply over-voltage ratio with VSWR as parameter. The graph applies to the situation in which the drive (PS/PSnom) increases linearly with supply over-voltage ratio. 5 Fig.10 Typical values; f = 175 MHz; MGP257 10 handbook, halfpage PLnom (W) (VSWR = 1) VSWR = 10 7.5 50 5 2.5 PS PSnom 0 0 1.1 1.2 VCE VCEnom 1.3 Fig.11 R.F. SOAR (short-time operation during mismatch); f = 175 MHz; Th = 70 °C; Rth mb-h = 0,3 K/W; VCEnom = 13,5 V or 12,5 V; PS = PSnom at VCEnom and VSWR = 1. August 1986 8 0 20 Philips Semiconductors Product specification VHF power transistor BLV10 MGP258 10 MGP259 25 handbook, halfpage handbook, halfpage ri, xi RL (Ω) (Ω) 5 ri CL CL (pF) RL −50 20 xi 0 CL ri 0 −100 15 RL xi −5 −10 −150 10 5 0 100 200 f (MHz) 300 0 Typical values; VCE = 13,5 V; PL = 8 W; Th = 25 °C 100 200 f (MHz) −200 300 Typical values; VCE = 13,5 V; PL = 8 W; Th = 25 °C Fig.12 Input impedance (series components). Fig.13 Load impedance (parallel components). OPERATING NOTE Below 70 MHz a base-emitter resistor of 10 Ω is recommended to avoid oscillation. This resistor must be effective for r.f. only. MGP260 20 handbook, halfpage Gp (dB) 15 10 5 0 0 100 200 f (MHz) 300 Typical values; VCE = 13,5 V; PL = 8 W; Th = 25 °C Fig.14 August 1986 9 Philips Semiconductors Product specification VHF power transistor BLV10 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT123A D A F q C B U1 w2 M C c H b L 4 3 α A p U3 U2 w1 M A B 1 2 H Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 F H L p Q q U1 U2 U3 w1 w2 mm 7.47 6.37 5.82 5.56 0.18 0.10 9.73 9.47 9.63 9.42 2.72 2.31 20.71 19.93 5.61 5.16 3.33 3.04 4.63 4.11 18.42 25.15 24.38 6.61 6.09 9.78 9.39 0.51 1.02 inches 0.294 0.251 0.229 0.007 0.219 0.004 0.182 0.725 0.162 0.99 0.96 0.26 0.24 0.385 0.370 0.02 0.04 OUTLINE VERSION 0.383 0.397 0.107 0.815 0.373 0.371 0.091 0.785 0.221 0.131 0.203 0.120 REFERENCES IEC JEDEC EIAJ SOT123A August 1986 α 45° EUROPEAN PROJECTION ISSUE DATE 97-06-28 10 Philips Semiconductors Product specification VHF power transistor BLV10 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1986 11