CEP01N6G/CEB01N6G CEF01N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP01N6G 600V 9.3Ω 1A 10V CEB01N6G 600V 9.3Ω 1A 10V CEF01N6G 600V 9.3Ω 1A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G D G D S G S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Parameter D S Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed S CEF SERIES TO-220F ID IDM a Maximum Power Dissipation @ TC = 25 C e PD - Derate above 25 C Operating and Store Temperature Range TO-220F 600 Units V ±30 V A 1 1 d 4 4 d 41 27 W 0.22 W/ C 0.33 TJ,Tstg -55 to 150 A C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case RθJC 3 4.5 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 65 C/W Rev 1. 2009.July http://www.cetsemi.com Details are subject to change without notice . 1 Electrical Characteristics Parameter CEP01N6G/CEB01N6G CEF01N6G Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 600 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 600V, VGS = 0V 20 µA IGSSF VGS = 30V, VDS = 0V 100 nA IGSSR VGS = -30V, VDS = 0V -100 nA 4 V 9.3 Ω Off Characteristics V On Characteristics b Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA RDS(on) VGS = 10V, ID = 0.6A Forward Transconductance gFS VDS = 15V, ID = 0.5A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Static Drain-Source On-Resistance 2 7.3 Dynamic Characteristics c VDS = 25V, VGS = 0V, f = 1.0 MHz 10 S 210 pF 55 pF 25 pF Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 300V, ID = 1A, VGS = 10V, RGEN =10Ω 20 11 26 26 14.3 ns ns nC Turn-Off Fall Time tf 18.5 33.8 24 Total Gate Charge Qg 7.2 9.4 Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 300V, ID = 1A, VGS = 10V ns ns 1.7 nC 4 nC Drain-Source Diode Characteristics and Maximun Ratings IS f Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 0.5A g Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 0.9A . g.Full package VSD test condition IS = 0.9A . 2 1 A 1.5 V 4 CEP01N6G/CEB01N6G CEF01N6G 2.4 VGS=10,8,7V 1.0 ID, Drain Current (A) ID, Drain Current (A) 1.2 0.8 0.6 0.4 VGS=4V 0.2 0 0.0 4 8 12 16 20 25 C 0.4 1 2 3 -55 C 4 5 6 7 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) Ciss 150 100 Coss 50 Crss 0 5 10 15 20 25 3.0 2.5 ID=0.6A VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ=125 C VGS, Gate-to-Source Voltage (V) IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 0.8 24 200 1.2 1.2 VDS, Drain-to-Source Voltage (V) 250 1.3 1.6 0 300 0 2.0 -25 0 25 50 75 100 125 150 VGS=0V 10 0 10 -1 10 -2 0.2 0.6 1.0 1.4 1.8 2.2 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 10 VDS=300V ID=1A 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEP01N6G/CEB01N6G CEF01N6G 6 4 2 0 0 1.5 3 4.5 6 7.5 10 1ms 0 10ms DC 10 -1 TC=25 C TJ=150 C Single Pulse -2 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 0.1 -1 PDM 0.05 0.02 0.01 t1 -2 10 -2 t2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4 4 100ms RDS(ON)Limit 10 9 1 10 3 10 4 3