CET CEB01N6G N-channel enhancement mode field effect transistor Datasheet

CEP01N6G/CEB01N6G
CEF01N6G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
VDSS
RDS(ON)
ID
@VGS
CEP01N6G
600V
9.3Ω
1A
10V
CEB01N6G
600V
9.3Ω
1A
10V
CEF01N6G
600V
9.3Ω
1A d
10V
D
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
G
D
G
D
S
G
S
CEB SERIES
TO-263(DD-PAK)
G
CEP SERIES
TO-220
ABSOLUTE MAXIMUM RATINGS
Parameter
D
S
Tc = 25 C unless otherwise noted
Limit
Symbol
TO-220/263
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed
S
CEF SERIES
TO-220F
ID
IDM
a
Maximum Power Dissipation @ TC = 25 C
e
PD
- Derate above 25 C
Operating and Store Temperature Range
TO-220F
600
Units
V
±30
V
A
1
1
d
4
4
d
41
27
W
0.22
W/ C
0.33
TJ,Tstg
-55 to 150
A
C
Thermal Characteristics
Parameter
Symbol
Limit
Units
Thermal Resistance, Junction-to-Case
RθJC
3
4.5
C/W
Thermal Resistance, Junction-to-Ambient
RθJA
62.5
65
C/W
Rev 1. 2009.July
http://www.cetsemi.com
Details are subject to change without notice .
1
Electrical Characteristics
Parameter
CEP01N6G/CEB01N6G
CEF01N6G
Tc = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
600
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 600V, VGS = 0V
20
µA
IGSSF
VGS = 30V, VDS = 0V
100
nA
IGSSR
VGS = -30V, VDS = 0V
-100
nA
4
V
9.3
Ω
Off Characteristics
V
On Characteristics b
Gate Threshold Voltage
VGS(th)
VGS = VDS, ID = 250µA
RDS(on)
VGS = 10V, ID = 0.6A
Forward Transconductance
gFS
VDS = 15V, ID = 0.5A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Static Drain-Source
On-Resistance
2
7.3
Dynamic Characteristics c
VDS = 25V, VGS = 0V,
f = 1.0 MHz
10
S
210
pF
55
pF
25
pF
Switching Characteristics c
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 300V, ID = 1A,
VGS = 10V, RGEN =10Ω
20
11
26
26
14.3
ns
ns
nC
Turn-Off Fall Time
tf
18.5
33.8
24
Total Gate Charge
Qg
7.2
9.4
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 300V, ID = 1A,
VGS = 10V
ns
ns
1.7
nC
4
nC
Drain-Source Diode Characteristics and Maximun Ratings
IS f
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
b
VSD
VGS = 0V, IS = 0.5A g
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
f.Full package IS(max) = 0.9A .
g.Full package VSD test condition IS = 0.9A .
2
1
A
1.5
V
4
CEP01N6G/CEB01N6G
CEF01N6G
2.4
VGS=10,8,7V
1.0
ID, Drain Current (A)
ID, Drain Current (A)
1.2
0.8
0.6
0.4
VGS=4V
0.2
0
0.0
4
8
12
16
20
25 C
0.4
1
2
3
-55 C
4
5
6
7
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
Ciss
150
100
Coss
50
Crss
0
5
10
15
20
25
3.0
2.5
ID=0.6A
VGS=10V
2.0
1.5
1.0
0.5
0.0
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
TJ=125 C
VGS, Gate-to-Source Voltage (V)
IS, Source-drain current (A)
C, Capacitance (pF)
VTH, Normalized
Gate-Source Threshold Voltage
0.8
24
200
1.2
1.2
VDS, Drain-to-Source Voltage (V)
250
1.3
1.6
0
300
0
2.0
-25
0
25
50
75
100
125
150
VGS=0V
10
0
10
-1
10
-2
0.2
0.6
1.0
1.4
1.8
2.2
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
10
10
VDS=300V
ID=1A
8
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CEP01N6G/CEB01N6G
CEF01N6G
6
4
2
0
0
1.5
3
4.5
6
7.5
10
1ms
0
10ms
DC
10
-1
TC=25 C
TJ=150 C
Single Pulse
-2
10
0
10
1
10
2
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
RL
V IN
D
VGS
RGEN
toff
tr
td(on)
td(off)
tf
90%
90%
VOUT
VOUT
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
Figure 9. Switching Test Circuit
10
0
D=0.5
0.2
10
0.1
-1
PDM
0.05
0.02
0.01
t1
-2
10
-2
t2
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (msec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
4
100ms
RDS(ON)Limit
10
9
1
10
3
10
4
3
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