Switching Diodes MA4X174 (MA174) Silicon planar type Unit: mm 2.90+0.20 –0.05 For small power rectification and surge absorption 1.9±0.2 0.16+0.10 –0.06 (0.95) (0.95) 0.5R 2 1 0.40+0.10 –0.05 Rating Unit VR 200 V Repetitive peak reverse voltage VRRM 250 V Non-repetitive peak reverse surge voltage VRSM 300 V IO 100 mA IFRM 225 IFSM 500 Output current Single Double Repetitive peak forward current Single 75 Double Non-repetitive peak Single forward surge current * Double 10˚ EIAJ: SC-61 1.1+0.3 –0.1 Symbol Reverse voltage 0.4±0.2 0.60+0.10 –0.05 +0.2 0 to 0.1 1.1–0.1 Parameter (0.65) (0.2) ■ Absolute Maximum Ratings Ta = 25°C 2.8+0.2 –0.3 4 5˚ 3 • Two isolated elements contained in one package, allowing highdensity mounting • High breakdown voltage: VR = 200 V 1.50+0.25 –0.05 ■ Features 1: Cathode 1 2: Cathode 2 3: Anode 2 4: Anode 1 Mini4-G1 Package Marking Symbol: M2O mA Internal Connection 170 mA 3 4 2 1 375 Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Note) *: t = 1 s ■ Electrical Characteristics Ta = 25°C ± 3°C Max Unit Forward voltage Parameter Symbol VF IF = 100 mA Conditions Min Typ 1.3 V Reverse current IR VR = 200 V 1.0 µA Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 3 MHz. Note) The part number in the parenthesis shows conventional part number. Publication date: March 2004 SKF00046BED 1 MA4X174 IR V R 102 10 10 1 Ta = 125°C 75°C 25°C −20°C 10 −1 10 −2 0 0.2 Ta = 125°C 1 75°C 10 −1 25°C 0.4 0.6 0.8 1.0 10 −3 1.2 0 40 IR T a 10 mA 3 mA 0.4 120 160 200 0 −40 240 10 −2 1.6 1.2 0.8 0.4 0 160 Ambient temperature Ta (°C) 200 0 40 80 120 160 200 Reverse voltage VR (V) SKF00046BED 120 160 200 IF(surge) tW Ta = 25°C IF(surge) Forward surge current IF(surge) (A) 10 −1 120 80 103 2.0 1 80 40 f = 1 MHz Ta = 25°C VR = 200 V 100 V 10 V 40 0 Ambient temperature Ta (°C) Ct VR Terminal capacitance Ct (pF) Reverse current IR (µA) 80 2.4 10 2 IF = 100 mA 0.8 Reverse voltage VR (V) 102 0 1.2 10 −2 Forward voltage VF (V) 10 −3 −40 VF Ta 1.6 Forward voltage VF (V) 102 Reverse current IR (µA) Forward current IF (mA) IF VF 103 240 tW Non repetitive 102 10 1 10 −1 10 −1 1 Pulse width tW (ms) 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP