FMS2010 Preliminary Data Sheet 1.1 SP6T GaAs Multi-Band GSM Antenna Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ANT Available in die form Suitable for multi-band GSM/DCS/PCS/EDGE applications Excellent low control voltage performance Excellent harmonic performance under GSM/ DCS/PCS power levels Very high Tx-Rx isolation >45dB typ. at 1.8GHz Very high Tx-Tx isolation >30dB typ. at 1.8GHz Very low Tx Insertion loss Very low control current RX1 VRX1 TX1 VTX1 RX2 VRX2 RX3 VRX3 VTX2 RX4 TX2 VRX4 VRXC Description and Applications: The FMS2010 is a low loss, high power and linear single pole six throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die is fabricated using the Filtronic FL05 0.5µm switch process technology that offers leading edge performance optimised for switch applications. The FMS2010 is designed for use in dual, tri and quad – band GSM handset antenna switch modules and RF front-end modules. Electrical Specifications: (TAMBIENT = 25°C,Vcontrol = 0V/2.5V, ZIN = ZOUT = 50Ω) Parameter Test Conditions Min Typ Max Units Tx Insertion Loss 0.5 – 1.0 GHz 1.0 – 2.0 GHz __ __ 0.5 0.6 0.7 0.9 dB dB Rx Insertion Loss 0.5 – 1.0 GHz 1.0 – 2.0 GHz __ __ 0.6 0.8 0.8 1.2 dB dB Return Loss 0.5 – 2.5 GHz __ 23 __ dB Isolation TX-TX 0.5 – 1.0 GHz 1.0 – 2.0 GHz 30 25 33 31 Isolation TX-RX 0.5 – 1.0 GHz 1.0 – 2.0 GHz 45 40 50 45 2nd Harmonic Level 1 GHz, Pin = +35 dBm, 100% Duty Cycle 2 GHz, Pin = +33 dBm, 100% Duty Cycle (17:1 VSWR) __ __ -75 -75 -70 -70 dBc dBc 3rd Harmonic Level 1 GHz, Pin = +35 dBm, 100% Duty Cycle 2 GHz, Pin = +33 dBm, 100% Duty Cycle (17:1 VSWR) __ __ -75 -75 -70 -70 dBc dBc Switching speed : Trise, Tfall Ton, Toff 10% to 90% RF and 90% to 10% RF 50% control to 90% RF and 50% control to 10% RF __ __ < 0.3 < 1.0 __ __ µs µs Note: __ __ __ __ External DC blocking capacitors are required on all RF ports (typ: 100pF). All unused ports terminated in 50Ω. 1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com dB dB dB dB FMS2010 Preliminary Data Sheet 1.1 Absolute Maximum Ratings: Parameter Absolute Maximum Max Input Power +38dBm Control Voltage +8.5V Operating Temp -40 °C to 100°C Storage Temp -55 °C to 150°C Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device. Truth Table: ON PATH VRXC VRX4 VTX2 VRX3 VRX1 VRX2 VTX1 Low Low Low Low Low Low High ANT-TX1 Low Low High Low Low Low Low ANT-TX2 High Low Low Low High Low Low ANT-RX1 High Low Low Low Low High Low ANT-RX2 High Low Low High Low Low Low ANT-RX3 High High Low Low Low Low Low ANT-RX4 Note: ‘High’ ‘Low’ = = +2.5V to +5V 0V to +0.2V 2 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com FMS2010 Preliminary Data Sheet 1.1 Pad and Die Layout: J H K L P Q O M N I A B C D E F G Pad Number Pad Name Description Pin Coordinates (µm) A VRXC Common Receive Switch Control Voltage 195, 126 B VRX4 RX4 Control Voltage 315, 126 C VTX2 TX2 Control Voltage 440, 126 D VRX3 RX3 Control Voltage 556, 126 E VRX1 RX1 Control Voltage 675, 126 F VRX2 RX2 Control Voltage 795, 126 G VTX1 TX1 Control Voltage 919, 126 H TX2 TX2 RF Output 108, 904 I TX1 TX1 RF Output 108, 242 J ANT Antenna 474, 912 K RX4 RX4 RF Output 988, 880 L RX3 RX3 RF Output 988, 750 M RX2 RX2 RF Output 988, 420 N RX1 RX1 RF Output 988, 290 O GND Ground 1 108, 514 P GND Ground 2 108, 627 Q GND Ground 3 988, 525 Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of the bond pad opening Die Size (µm) Die Thickness (µm) Min. Bond Pad Pitch(µm) Min. Bond pad opening (µm) 1100 x 1000 150 µm 113 70 x 70 3 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com FMS2010 Preliminary Data Sheet 1.1 Typical Measured Performance Curves: TX Loss RX Loss TX-TX Isolation RX-RX Isolation -10 0 0.8 GHz -28.5 dB -20 Isolation (dB) Isolation (dBm) -10 1.8 GHz -23.3 dB -30 0.8 GHz -33.9 dB -20 -30 1.8 GHz -31.4 dB -40 RX3 - RX1 Isolation RX2 - RX1 Isolation -50 RX4 - RX2 Isolation -40 TX1 - TX2 Isolation TX2 - TX1 Isolation -60 0.5 1 1.5 Frequency (GHz) 2 2.5 0.5 TX-RX Isolation 1 1.5 Frequency (GHz) TX Harmonic Level Isolation (dBm) -20 1.8 GHz -45.1 dB 0.8 GHz -50.5 dB -40 1.8 GHz -47.7 dB -60 RX3 - TX1 Isolation RX4 - TX2 Isolation RX2 - TX2 Isolation -80 0.5 1 1.5 Frequency (GHz) 2 2.5 4 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com 2 2.5 FMS2010 Preliminary Data Sheet 1.1 Evaluation Board: C2 C2 C2 C2 C2 C2 C2 C1 C1 C1 C3 C1 C1 C1 C3 C1 C3 C3 C3 C3 C3 BOM Label Component C1 Capacitor, 47pF, 0402 C2 Capacitor, 470pF, 0603 C3 Capacitor, 100pF, 0402 5 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com Preliminary Data Sheet 1.1 FMS2010 Ordering Information: Part Number Description FMS2010-000-WP Die – waffle pak FMS2010-000-GP Die – gel-pak FMS2010-000-EB Die mounted on evaluation board FMS2010-000-FF Wafer mounted on film frame Preferred Assembly Instructions: GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is not metallised and the recommended mounting method is by the use of conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for 1 hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4µm diameter gold wire is used. Thermosonic ball bonding is preferred. A nominal stage temperature of 150°C and a bonding force of 40g has been shown to give effective results for 25µm wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique, stage temperature should not be raised above 200°C and bond force should not be raised above 60g. Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve good wire bonds. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections. Handling Precautions: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No. 22-A114-B. Further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263. Disclaimers: This product is not designed for use in any space based or life sustaining/supporting equipment. 6 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com