BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev. 01 — 28 January 2008 Preliminary data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f VDS PL(AV) Gp ηD IMD3 ACPR (MHz) (V) (W) (dB) (%) (dBc) (dBc) 1930 to 1990 28 25 19 31 −37[1] −40[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 900 mA: u Average output power = 25 W u Power gain = 19 dB u Efficiency = 31 % u IMD3 = −37 dBc u ACPR = −40 dBc n Easy power control n Integrated ESD protection n Excellent ruggedness n High efficiency n Excellent thermal stability n Designed for broadband operation (1800 MHz to 2000 MHz) n Internally matched for ease of use n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) BLF6G20-110; BLF6G20LS-110 NXP Semiconductors Power LDMOS transistor 1.3 Applications n RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multicarrier applications in the 1800 MHz to 2000 MHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol BLF6G20-110 (SOT502A) 1 drain 2 gate 3 1 1 3 [1] source 2 2 3 sym112 BLF6G20LS-110 (SOT502B) 1 drain 2 gate 3 1 [1] source 1 3 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number BLF6G20-110 Package Name Description Version - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A earless flanged LDMOST ceramic package; 2 leads SOT502B BLF6G20LS-110 - 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 65 V VGS gate-source voltage −0.5 +13 V ID drain current - 29 A Tstg storage temperature −65 +150 °C Tj junction temperature - 225 °C BLF6G20-110_BLF6G20LS-110_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 28 January 2008 2 of 9 BLF6G20-110; BLF6G20LS-110 NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Type Rth(j-case) thermal resistance from junction to case Tcase = 80 °C; BLF6G20-110 PL = 25 W (CW) BLF6G20LS-110 Typ Unit 0.52 K/W 0.45 K/W 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.5 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 150 mA 1.4 2 2.4 V VGSq gate-source quiescent voltage VDS = 28 V; ID = 950 mA 1.6 2.1 2.6 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 5 µA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 22.3 27 - A IGSS gate leakage current VGS = 13 V; VDS = 0 V - - 450 nA gfs forward transconductance VDS = 10 V; ID = 7.5 A - 10.5 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 5.25 A - 0.1 0.160 Ω Crs feedback capacitance VGS = 0 V; VDS = 28 V; f = 1 MHz - 2.1 - pF 7. Application information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 1932.5 MHz; f2 = 1942.5 MHz; f3 = 1977.5 MHz; f4 = 1987.5 MHz; RF performance at VDS = 28 V; IDq = 900 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit PL(AV) average output power - 25 - W Gp power gain PL(AV) = 25 W 18 19 - dB ηD drain efficiency PL(AV) = 25 W 29 31 - % IMD3 third order intermodulation distortion PL(AV) = 25 W - −37 - dBc ACPR adjacent channel power ratio PL(AV) = 25 W - −40 - dBc 7.1 Ruggedness in class-AB operation The BLF6G20-110 and BLF6G20LS-110 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 900 mA; PL = 110 W (CW); f = 1990 MHz. BLF6G20-110_BLF6G20LS-110_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 28 January 2008 3 of 9 BLF6G20-110; BLF6G20LS-110 NXP Semiconductors Power LDMOS transistor 8. Test information C3 C4 R1 C6 C5 C10 R2 C7 C9 C8 Q1 C2 C1 C14 C15 C16 C11 C12 C13 INPUTBOARD OUTPUTBOARD TB TB 001aah517 The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm. See Table 8 for list of components. Fig 1. Component layout Table 8. List of components (see Figure 1). Component Description Remarks C1 multilayer ceramic chip capacitor 8.2 pF [1] C2 multilayer ceramic chip capacitor 10 pF [1] C3 electrolytic capacitor 100 µF; 63 V C4, C8 multilayer ceramic chip capacitor 4.7 µF; 25 V [2] C5, C7, C12, C13 multilayer ceramic chip capacitor 220 nF; 50 V [3] C6, C10, C11 multilayer ceramic chip capacitor 13 pF [1] C9 multilayer ceramic chip capacitor 330 nF; 50 V [3] C14 multilayer ceramic chip capacitor 1.0 pF [1] C15 multilayer ceramic chip capacitor 1.5 pF [1] C16 multilayer ceramic chip capacitor 0.6 pF [1] Q1 BLF6G20-110 or BLF6G20LS-110 - R1 SMD resistor 1.0 Ω R2 SMD resistor 2.7 Ω [1] American Technical Ceramics type 100B or capacitor of same quality. [2] TDK or capacitor of same quality. [3] AVX or capacitor of same quality. BLF6G20-110_BLF6G20LS-110_1 Preliminary data sheet Value © NXP B.V. 2008. All rights reserved. Rev. 01 — 28 January 2008 4 of 9 BLF6G20-110; BLF6G20LS-110 NXP Semiconductors Power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502A Fig 2. Package outline SOT502A BLF6G20-110_BLF6G20LS-110_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 28 January 2008 5 of 9 BLF6G20-110; BLF6G20LS-110 NXP Semiconductors Power LDMOS transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA 0.390 0.010 0.380 EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 SOT502B Fig 3. Package outline SOT502B BLF6G20-110_BLF6G20LS-110_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 28 January 2008 6 of 9 NXP Semiconductors BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor 10. Abbreviations Table 9. Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CDMA Code Division Multiple Access CW Continuous Wave DPCH Dedicated Physical CHannel EDGE Enhanced Data rates for GSM Evolution EVM Error Vector Magnitude GSM Global System for Mobile communications LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor PAR Peak-to-Average power Ratio PDPCH transmission Power of the Dedicated Physical CHannel RF Radio Frequency VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF6G20-110_BLF6G20LS-110_1 20080128 Preliminary data sheet - - BLF6G20-110_BLF6G20LS-110_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 28 January 2008 7 of 9 NXP Semiconductors BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] BLF6G20-110_BLF6G20LS-110_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 28 January 2008 8 of 9 NXP Semiconductors BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . General description. . . . . . . . . . . . . . . . . . . . . . Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . Pinning information . . . . . . . . . . . . . . . . . . . . . . Ordering information . . . . . . . . . . . . . . . . . . . . . Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . Thermal characteristics. . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . Application information. . . . . . . . . . . . . . . . . . . Ruggedness in class-AB operation. . . . . . . . . . Test information . . . . . . . . . . . . . . . . . . . . . . . . . Package outline . . . . . . . . . . . . . . . . . . . . . . . . . Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . Revision history . . . . . . . . . . . . . . . . . . . . . . . . . Legal information. . . . . . . . . . . . . . . . . . . . . . . . Data sheet status . . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information. . . . . . . . . . . . . . . . . . . . . . Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 1 2 2 2 2 3 3 3 3 4 5 7 7 8 8 8 8 8 8 9 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 28 January 2008 Document identifier: BLF6G20-110_BLF6G20LS-110_1