OSRAM BPY62-3 Lead (pb) free product - rohs compliant Datasheet

NPN-Silizium-Fototransistor
Silicon NPN Phototransistor
Lead (Pb) Free Product - RoHS Compliant
BPY 62
Wesentliche Merkmale
Features
• Speziell geeignet für Anwendungen im Bereich
von 400 nm bis 1100 nm
• Hohe Linearität
• Hermetisch dichte Metallbauform (TO-18) mit
Basisanschluss, geeignet bis 125 °C
• Gruppiert lieferbar
• Especially suitable for applications from
400 nm to 1100 nm
• High linearity
• Hermetically sealed metal package (TO-18)
with base connection, suitable up to 125 °C
• Available in groups
Anwendungen
Applications
• Lichtschranken für Gleich- und
Wechsellichtbetrieb
• Industrieelektronik
• „Messen/Steuern/Regeln“
• Photointerrupters
• Industrial electronics
• For control and drive circuits
Typ
Type
Bestellnummer
Ordering Code
Fotostrom , Ee= 0.5 mW/cm2, λ = 950 nm, VCE = 5 V
Photocurrent
IPCE (mA)
BPY 62
Q60215Y0062
> 0.5
BPY 62-3
Q60215Y1112
0.8…1.6
BPY 62-3/4
Q60215Y5198
0.8…2.5
BPY 62-4
Q60215Y1113
1.25…2.5
2007-04-03
1
BPY 62
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
Top; Tstg
– 40 … + 125
°C
Kollektor-Emitterspannung
Collector-emitter voltage
VCE
35
V
Kollektorstrom
Collector current
IC
100
mA
Kollektorspitzenstrom, τ < 10 μs
Collector surge current
ICS
200
mA
Emitter-Basisspannung
Emitter-base voltage
VEB
7
V
Verlustleistung, TA = 25 °C
Total power dissipation
Ptot
200
mW
Wärmewiderstand
Thermal resistance
RthJA
500
K/W
2007-04-03
2
BPY 62
Kennwerte (TA = 25 °C, λ = 950 nm)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
λS max
830
nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
λ
400 … 1100
nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area
A
0.11
mm2
Abmessung der Chipfläche
Dimensions of chip area
L×B
L×W
0.5 × 0.5
mm × mm
Halbwinkel
Half angle
ϕ
±8
Grad
deg.
IPCB
IPCB
5.5
17
μA
μA
CCE
CCB
CEB
7.5
14
19
pF
pF
pF
ICEO
1 (≤ 50)
nA
Fotostrom der Kollektor-Basis-Fotodiode
Photocurrent of collector-base photodiode
Ee = 0.5 mW/cm2, VCB = 5 V
Ev = 1000 Ix, Normlicht/standard light A,
VCB = 5 V
Kapazität
Capacitance
VCE = 0 V, f = 1 MHz, E = 0
VCB = 0 V, f = 1 MHz, E = 0
VEB = 0 V, f = 1 MHz, E = 0
Dunkelstrom
Dark current
VCE = 20 V, E = 0
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3
BPY 62
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
arabian figures.
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
-2
-3
Einheit
Unit
-4
-5
0.5…1.0 0.8…1.6
2.4
3.8
1.25…2.5
5.8
≥ 2.0
9.6
mA
mA
Fotostrom
Photocurrent
Ee= 0.5 mW/cm2, λ = 950 nm, VCE = 5 V
IPCE
Ev = 1000 Ix, Normlicht/standard light A, IPCE
VCE = 5 V
Anstiegszeit/Abfallzeit
Rise and fall time
IC = 1 mA, VCC = 5 V, RL = 1 kΩ
tr, tf
5
7
9
12
μs
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
IC = IPCEmin1) × 0.3,
Ee = 0.5 mW/cm2
VCEsat
150
150
160
180
mV
Stromverstärkung
Current gain
Ee = 0.5 mW/cm2, VCE =5 V
I PCE
--------I PCB
140
220
340
550
–
1)
IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe.
1)
IPCEmin is the min. photocurrent of the specified group.
2007-04-03
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BPY 62
Relative Spectral sensitivity
Srel = f (λ)
Photocurrent
IPCE = f (Ee), VCE = 5 V
Total Power Dissipation
Ptot = f (TA)
Output Characteristics
IC = f (VCE), IB = Parameter
Dark Current
ICEO = f (VCE), E = 0
100
%
90
S re l
80
70
60
50
40
30
20
10
0
400
500
600
700
800
900 1000
nm 1100
λ
Output Characteristics
IC = f (VCE), IB = Parameter
10
nA
I CEO
1
0.1
0.01
0
5
10
15
20
25
30 V 35
V CE
Photocurrent
IPCE/IPCE25o = f (TA), VCE = 5 V
Dark Current
ICEO = f (TA), VCE = 20 V, E = 0
Collector-Emitter Capacitance
CCE = f (VCE), f = 1 MHz, E = 0
8
10000
pF
nA
7
1000
CCE
I CEO
6
100
5
10
4
3
1
2
0.1
1
0.01
-25
0
25
50
75
TA
°C
100
0
1E-03
1E-02
1E-01
1E+00
1E+01
VCE
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5
1E+02
V
BPY 62
Collector-Base Capacitance
CCB = f (VCB), f = 1 MHz, E = 0
Emitter-Base Capacitance
CEB = f (VEB), f = 1 MHz, E = 0
22
16
pF 20
pF 14
CCB
CEB
12
18
16
14
10
12
8
10
6
8
6
4
4
2
2
0
0
1E-03
1E-02
1E-01
1E+00
1E+01
VCB
V
1E+02
1E-03
1E-02
1E-01
1E+01
VEB
Directional Characteristics
Srel = f (ϕ)
2007-04-03
1E+00
6
V
1E+02
BPY 62
Maßzeichnung
Package Outlines
Radiant
sensitive area
0.9
1.1
(0
(0
.04
.03
5)
14.5 (0.571)
5.1 (0.201)
12.5 (0.492)
4.8 (0.189)
6.2 (0.244)
3)
E C B
ø5.6 (0.220)
ø5.3 (0.209)
5.4 (0.213)
GMOY6019
Maße in mm (inch) / Dimensions in mm (inch).
2007-04-03
3)
.04 5)
.03
1.
(0
9
0.
0
1(
2.54 (0.100)
spacing
ø0.45 (0.018)
ø4.6 (0.181)
(2.7 (0.106))
ø4.8 (0.189)
Chip position
7
BPY 62
Lötbedingungen
Soldering Conditions
Wellenlöten (TTW)
TTW Soldering
(nach CECC 00802)
(acc. to CECC 00802)
OHLY0598
300
C
T
10 s
250
Normalkurve
standard curve
235 C ... 260 C
Grenzkurven
limit curves
2. Welle
2. wave
200
1. Welle
1. wave
150
ca 200 K/s
2 K/s
5 K/s
100 C ... 130 C
100
2 K/s
50
Zwangskühlung
forced cooling
0
0
50
100
150
200
s
250
t
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1
A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2
Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2007-04-03
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