Diodes SMD Type Switching Diodes DAP202U (KAP202U) ■ Features ● Four types of packaging are available ● High speed ● Suitable for high packing density layout ● High reliability 1 3 2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Peak Reverse Voltage VRM 80 DC Reverse Voltage VR 80 Average forward current IO 100 Peak Forward Surge Current IFM 300 Power Dissipation Pd 200 Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature range Unit V mA mW ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Reverse breakdown voltage VR IR= 100 uA Forward voltage VF IF= 100mA 1.2 Reverse voltage leakage current IR VR= 70 V 0.1 Junction capacitance Cj VR= 6 V, f= 1 MHz 3.5 pF Reverse recovery time trr IF=5mA , VR=6V 4 ns 80 V uA ■ Marking Marking P www.kexin.com.cn 1 Diodes SMD Type Switching Diodes DAP202U (KAP202U) ■ Typical Characterisitics Forward 100 Characteristics Reverse 1000 Pulsed (nA) REVERSE CURRENT IR T= a 2 5℃ T= a 1 00 ℃ FORWARD CURRENT IF (mA) Pulsed 10 1 0.1 0.2 0.4 0.6 FORWARD VOLTAGE 0.8 VF Ta=100℃ 100 10 1 1.0 Ta=25℃ 0 20 (V) 40 REVERSE VOLTAGE Capacitance Characteristics 1.4 Characteristics 60 VR 80 (V) Power Derating Curve 250 Ta=25℃ (mW) 1.2 1.1 1.0 0 5 10 REVERSE VOLTAGE 2 200 PD 1.3 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) f=1MHz www.kexin.com.cn 15 VR (V) 20 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃) 150