NTE191 (NPN) & NTE240 (PNP) Silicon Complementary Transistors High Voltage Video Amplifier Description: The NTE191 (NPN) and NTE240 (PNP) are silicon complementary transistors in a TO202N type package designed for high–voltage video and luminance output stages in TV receivers. Features: D High Collector–Emitter Breakdown Voltage: V(BR)CEO = 300V (Min) @ IC = 1mA D Low Collector–Emitter Saturation Voltage: VCE(sat) = 0.75V (Max) @ IC = 30mA D Low Collector–Base Capacitance: Ccb = 3pF (Max) @ VCB = 20V Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Emitter–Base Voltage, VEBO NTE191 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V NTE240 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/°C Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W Thermal Resistance, Junction–to–Ambient (Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W Note 1. NTE191 is a discontinued device and no longer available. Note 2. RthJA is measured with the device soldered into a typical printed circuit board. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0, Note 3 300 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0 300 – – V Emitter–Base Breakdown Voltage NTE191 V(BR)EBO 6 – – V 5 – – V IE = 100µA, IC = 0 NTE240 Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics (Cont’d) Collector Cutoff Current ICBO VCB = 200V, IE = 0 – – 0.2 µA Emitter Cutoff Current IEBO VBE = 6V, IC = 0 – – 0.1 µA hFE IC = 1mA, VCE = 10V, Note 3 25 – – IC = 10mA, VCE = 10V, Note 3 40 – – IC = 30mA, VCE = 10V, Note 3 40 – – IC = 10mA, VCE = 10V, Note 3 30 – – IC = 30mA, VCE = 10V, Note 3 30 – – IC = 30mA, IB = 3mA – – 0.75 V IC = 30mA, VCE = 10V – – 0.85 V – – 0.90 V IC = 10mA, VCE = 20V, f = 100MHz, Note 2 45 – – MHz 60 – – MHz VCB = 20V, IE = 0, f = 1MHz – – 3.0 pF – – 8.0 pF ON Characteristics DC Current Gain (NTE191 & NTE240) NTE191 NTE240 Collector–Emitter Saturation Voltage VCE(sat) Base–Emitter ON Voltage NTE191 VBE(on) NTE240 Dynamic Characteristics Current Gain–Bandwidth Product NTE191 fT NTE240 Collector–Base Capacitance NTE191 Ccb NTE240 Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. .380 (9.65) Max .050 (1.27) .160 (4.06) .280 (7.25) Max .128 (3.28) Dia .100 (2.54) .218 (5.55) E B C .995 (25.3) .475 (12.0) Min .100 (2.54) .200 (5.08) Collector Connected to Tab