HI-SINCERITY Spec. No. : Preliminary Data Issued Date : 1998.07.01 Revised Date : 1999.08.01 Page No. : 1/5 MICROELECTRONICS CORP. H603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor Description This very high density process has been especially tailored to minimize onstate resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC/DC converters and other battery powered circuits where fast switching, low inline power loss, and resistance to transients are needed. Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Operating and Storage Temperature ................................................................................ -65 ~ +175 °C • Maximum Power Dissipation Total Power Dissipation at Tc=25°C ............................................................................................... 60 W Derate Above 25°C ................................................................................................................ 0.4 W / °C • Maximum Voltages and Currents Drain-Source Voltage ...................................................................................................................... 30 V Gate-Source Voltage -Continuous................................................................................................ ± 20 V Drain Current -Continuous .............................................................................................................. 30 A Drain Current -Pulsed ................................................................................................................... 100 A Thermal Resistance, Junction-to-Case .................................................................................. 2.5 °C / W Thermal Resistance, Junction-to-Ambient............................................................................ 62.5 °C / W Electrical Characteristics • Off Characteristics Symbol Parameter BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current +IGSS Gate-Body Leakage, Forward -IGSS Gate-Body Leakage, Reverse Condition VGS=0V, ID=250uA VDS=30V, VGS=0V VGS=20V, VDS=0V VGS=-20V, VDS=0V Min 30 - VDS=VGS, ID=250uA VDS=VGS, ID=10mA VGS=10V, ID=25A VGS=4.5V, ID=10A VGS=10V, VDS=10V VGS=4.5V, VDS=10V VDS=10V, ID=25A 1.1 1.4 60 15 - Typ - Max Unit V 10 uA 100 nA -100 nA • On Characteristics VGS(TH) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance IDS(on) On-State Drain Current gFS Forward Transconductance • Dynamic Characteristic Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V, VGS=0V f=1.0Mhz - 3 3 0.018 0.022 0.029 0.040 26 1100 600 180 - V Ω A S pF pF pF HSMC Product Specification HI-SINCERITY Spec. No. : Preliminary Data Issued Date : 1998.07.01 Revised Date : 1999.08.01 Page No. : 2/5 MICROELECTRONICS CORP. • Switching Characteristics Symbol Parameter Turn-On Delay Time T(on) Turn-On Rise Time Turn-Off Delay Time T(off) Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Condition VDS=15V, ID=25A VGS=10V, RGEN=24Ω VDS=10V, ID=25A, VGS=10V Min - Typ - - - Max Unit 30 ns 110 ns 150 ns 130 ns 45 nC 10 nC 10 nC • Drain-Source Diode Characteristics And Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS=0V, IS=25A VSD 25 1.3 A V Characteristics Curve On-Region Characteristic On-Resistance Variation With Gate Voltage & Drain Current 100 VGS=10V 8V 3.0 7V 6V VGS= 4V Normalized Drain-Source OnResistance Drain-Source Current (A) 80 5V 60 4.5V 40 4V 20 2.5 4.5V 5V 2.0 6V 1.5 7V 8V 1.0 10V 3V 0.5 0 0 1 2 3 4 0 5 40 60 80 Drain Current (A) On Resistance Variation & Temperature On-Resistance Variation & Drain Current & Temperature 1.6 2.5 1.5 1.4 Normalized Drain-Source OnResistance Normalized Drain-Source On-Resistance 20 Drain-Source Voltage (V) ID=25A VGS=10V 1.3 1.2 1.1 1.0 VGS=10V 2 TJ=125°C 1.5 TJ=25°C 1 0.9 0.8 0.5 25 50 75 100 Junction Temperature (°C) 125 150 0 20 40 60 80 Drain Current (A) HSMC Product Specification HI-SINCERITY Spec. No. : Preliminary Data Issued Date : 1998.07.01 Revised Date : 1999.08.01 Page No. : 3/5 MICROELECTRONICS CORP. Drain Current Variation & Gate Voltage & Temperature Sub-Threshold Drain Current Variation & Gate Voltage & Temperature 0.06 50 TJ= 25°C 0.05 40 TJ=125°C TJ=25°C Drain Current (A) Drain Current (A) TJ=125°C 30 20 10 0.04 0.03 0.02 0.01 0 0 0 1 2 3 4 5 0.5 6 1.0 Gate-Source Voltage (V) 1.5 2.0 2.5 Gate-Source Voltage (V) Gate Threshold Variation & Temperature Capacitance Characteristics 1.8 2000 1.6 1500 ID=10mA 1.5 Capacitance (pF) Gate-Source Threshold Voltage (V) 1.7 1.4 ID=1mA 1.3 1.2 ID= 250uA Ciss 1000 Coss 1.1 500 1 Crss 0.9 0 0.8 25 50 75 100 125 0 150 5 Junction Temperature (°C) 10 15 20 25 30 Drain-Source Voltage (V) Breakdown Voltage Variation & Temperature Body Diode Forward Voltage Variation & Current & Temperature 1.1 1.08 TJ=125°C Reverse Drain Current (A) Normalized Drain-Source Breakdown Voltage 100 1.06 1.04 1.02 TJ= 25°C 10 1 1 0.1 0.98 25 50 75 100 Junction Temperature (°C) 125 150 0.2 0.4 0.6 0.8 1 1.2 Body Diode Forward Voltage (V) HSMC Product Specification HI-SINCERITY Spec. No. : Preliminary Data Issued Date : 1998.07.01 Revised Date : 1999.08.01 Page No. : 4/5 MICROELECTRONICS CORP. Transductance Variation & Drain Current & Temperature Maximum Safe Operating Area 100 30 TJ=25°C 1us Drain-Source Current (A) Transconductance (S) 25 TJ=125°C 20 15 10 Rds(on) Line 1ms 10ms 10 100ms VGS=20V Single Pulse TC=25°C 5 0 Dc 1 0 10 20 30 40 50 0.1 Drain Current (A) 1 10 100 Drain-Source Voltage (V) Trancient Thermal Response Curve Normalized Effective Transient Thermal Resistance 1 0.5 0.2 0.1 0.1 RθJC(t) = r(t) * RθJC(t) RθJC =2.5 °C / W 0.05 P(pk) 0.02 t1 t2 0.01 TJ-TC=P* RθJC(t) Duty Cycle,D=t1/t2 Single Pulse 0.01 0.1 1 10 100 1000 Time (ms) HSMC Product Specification HI-SINCERITY Spec. No. : Preliminary Data Issued Date : 1998.07.01 Revised Date : 1999.08.01 Page No. : 5/5 MICROELECTRONICS CORP. TO-220AB Dimension Marking : A B D E C HSMC Logo Part Number Date Code Product Series Rank H K M I Style : Pin 1.Gate 2.Drain 3.Source 3 G N 2 1 4 P O 3-Lead TO-220AB Plastic Package HSMC Package Code : E *:Typical Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398 DIM A B C D E G H Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248 Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87 Notes : 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997. 2.Controlling dimension : millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material : • Lead : 42 Alloy ; solder plating • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : • Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 • Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 • Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5977061 Fax : 886-3-5979220 HSMC Product Specification