HMC453QS16G / 453QS16GE v01.0205 11 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Typical Applications Features The HMC453QS16G / HMC453QS16GE is ideal for applications requiring a high dynamic range amplifier: Output IP3: +51 dBm • GSM, GPRS & EDGE 8 dB Gain @ 2100 MHz • CDMA & W-CDMA 45% PAE @ +32 dBm Pout • CATV/Cable Modem +25 dBm CDMA2000 Channel Power@ -45 dBc ACP • Fixed Wireless & WLL Single +5V Supply 21.5 dB Gain @ 400 MHz LINEAR & POWER AMPLIFIERS - SMT Integrated Power Control (VPD) QSOP16G SMT Package: 29.4 mm2 General Description Functional Diagram The HMC453QS16G & HMC453QS16GE are high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1.6 watt MMIC power amplifiers operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 21.5 dB at 0.4 GHz and 8 dB at 2.1 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +47 dBm at 0.4 GHz or +51 dBm at 2.1 GHz. The power control (VPD) can be used for full power down or RF output power/ current control. The high output IP3 and PAE make the HMC453QS16G(E) ideal power amplifiers for Cellular/PCS/3G, WLL, ISM and Fixed Wireless applications. Electrical Specifi cations, TA = +25°C, Vs= +5V, VPD = +5V [1] Parameter Min. Frequency Range Gain Typ. Max. Min. 400 - 410 19 Gain Variation Over Temperature 21.5 0.012 Typ. Max. Min. 450 - 496 18 0.02 20.5 0.012 Typ. Max. Min. 810 - 960 12 0.02 15 0.012 Typ. Max. Min. 1710 - 1990 6 0.02 9 0.012 6 0.02 Typ. Max. Units 2010 - 2170 MHz 8 dB 0.012 0.02 dB / °C Input Return Loss 12 15 12 10 15 dB Output Return Loss 10 10 15 13 18 dB 33 dBm 33.5 dBm 51 dBm dB Output Power for 1dB Compression (P1dB) 29 Saturated Output Power (Psat) Output Third Order Intercept (IP3) [2] Noise Figure 32 29 32.25 44 47 32 29 32.25 47 50 32 28.5 32.5 46 49 31.5 30 32 44 50 48 7 8.5 7 7.5 6.5 Supply Current (Icq) 725 725 725 725 725 mA Control Current (IPD) 12 12 12 12 12 mA [1] Specifications and data reflect HMC453QS16G measured using the respective application circuits for each designated frequency band found herein. Contact the HMC Applications Group for assistance in optimizing performance for your application. [2] Two-tone input power of -10 dBm per tone, 1 MHz spacing. 11 - 178 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC453QS16G / 453QS16GE v01.0205 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Broadband Gain & Return Loss @ 400 MHz Gain vs. Temperature @ 400 MHz 24 25 23 20 22 21 20 10 GAIN (dB) S21 S11 S22 5 0 -5 18 +25 C 17 +85 C 16 -40 C 14 13 0.2 0.3 0.4 0.5 0.6 12 0.35 0.7 0.37 0.39 0.41 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature @ 400 MHz Output Return Loss vs. Temperature @ 400 MHz RETURN LOSS (dB) RETURN LOSS (dB) +25 C +85 C -40 C -5 -10 0.37 0.39 0.41 0.43 0.43 0.45 -10 +25 C +85 C -40 C -15 -20 0.35 0.45 0.37 33 32 32 31 31 Psat (dBm) 34 33 30 +25 C 28 +85 C -40 C 27 30 29 26 25 0.41 FREQUENCY (GHz) +85 C -40 C 27 25 0.39 +25 C 28 26 0.37 0.41 Psat vs. Temperature @ 400 MHz 34 29 0.39 FREQUENCY (GHz) P1dB vs. Temperature @ 400 MHz P1dB (dBm) 0.45 -5 FREQUENCY (GHz) 24 0.35 0.43 0 0 -15 0.35 11 15 -10 -15 0.1 19 0.43 0.45 LINEAR & POWER AMPLIFIERS - SMT RESPONSE (dB) 15 24 0.35 0.37 0.39 0.41 0.43 0.45 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 179 HMC453QS16G / 453QS16GE v01.0205 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Output IP3 vs. Temperature @ 400 MHz 10 50 9 48 8 NOISE FIGURE (dB) 52 44 42 40 +25 C 38 +85 C -40 C 36 6 5 1 0.39 0.41 0.43 -40 C 3 32 0.37 +25 C +85 C 4 34 0 0.35 0.45 0.37 0.39 FREQUENCY (GHz) +25 C +85 C -40 C -20 -25 -30 -35 0.35 0.37 0.39 0.41 0.43 0.45 GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) ISOLATION (dB) -5 -15 0.43 0.45 Gain, Power & IP3 vs. Supply Voltage @ 400 MHz 0 -10 0.41 FREQUENCY (GHz) Reverse Isolation vs. Temperature @ 400 MHz 55 50 45 Gain P1dB Psat OIP3 40 35 30 25 20 15 10 4.5 4.75 5 FREQUENCY (GHz) 5.25 5.5 Vs (Vdc) ACPR vs. Supply Voltage @ 400 MHz W-CDMA, 64 DPCH Power Compression @ 400 MHz -10 50 -15 45 Pout Gain PAE 40 W-CDMA Frequency: 400 MHz Integration BW: 3.84 MHz 64 DPCH -25 ACPR (dBc) 35 -20 30 25 20 -30 -35 -40 4.5V -45 5V 5.5V -50 15 -55 10 -60 5 -65 0 -10 -70 -8 -6 -4 -2 0 2 4 6 INPUT POWER (dBm) 11 - 180 7 2 30 0.35 Pout (dBm), Gain (dB), PAE (%) LINEAR & POWER AMPLIFIERS - SMT OIP3 (dBm) 46 11 Noise Figure vs. Temperature @ 400 MHz 8 10 12 14 Source ACPR 8 10 12 14 16 18 20 22 24 Channel Power (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 26 28 HMC453QS16G / 453QS16GE v01.0205 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Broadband Gain & Return Loss @ 470 MHz Gain vs. Temperature @ 470 MHz 23 25 22 20 21 20 10 GAIN (dB) S21 S11 S22 5 0 19 18 17 +85C -40C 15 -5 11 +25C 16 14 -10 -15 0.1 13 0.2 0.3 0.4 0.5 0.6 12 0.43 0.7 0.45 FREQUENCY (GHz) 0.47 0.49 0.51 0.53 0.51 0.53 FREQUENCY (GHz) Input Return Loss vs. Temperature @ 40 MHz Output Return Loss vs. Temperature @ 470 MHz 0 0 RETURN LOSS (dB) RETURN LOSS (dB) -2 +25C +85C -40C -5 -10 -15 -4 +25C +85C -40C -6 -8 -10 -12 -20 0.43 0.45 0.47 0.49 0.51 -14 0.43 0.53 0.45 FREQUENCY (GHz) 34 34 33 33 32 32 31 31 30 +25C 28 +85C -40C 27 30 29 26 25 0.47 0.49 FREQUENCY (GHz) +85C -40C 27 25 0.45 +25C 28 26 24 0.43 0.49 Psat vs. Temperature @ 470 MHz Psat (dBm) P1dB (dBm) P1dB vs. Temperature @ 470 MHz 29 0.47 FREQUENCY (GHz) 0.51 0.53 LINEAR & POWER AMPLIFIERS - SMT RESPONSE (dB) 15 24 0.43 0.45 0.47 0.49 0.51 0.53 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 181 HMC453QS16G / 453QS16GE v01.0205 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Output IP3 vs. Temperature @ 470 MHz 10 56 9 54 8 NOISE FIGURE (dB) 58 OIP3 (dBm) 52 11 Noise Figure vs. Temperature @ 470 MHz 50 48 46 44 +25C 42 +85C 40 -40C 5 +25C +85C 4 -40C 3 1 36 0.43 0.45 0.47 0.49 0.51 0 0.43 0.53 0.45 0.47 FREQUENCY (GHz) +25C +85C -40C -20 -25 -30 0.43 0.45 0.47 0.49 0.51 0.53 GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) ISOLATION (dB) -5 -15 0.53 55 50 45 Gain P1dB Psat OIP3 40 35 30 25 20 15 10 4.5 4.75 5 5.25 5.5 Vs (Vdc) FREQUENCY (GHz) ACPR vs. Supply Voltage @ 470 MHz W-CDMA, 64 DPCH Power Compression @ 470 MHz -10 55 50 -15 Pout Gain PAE 45 40 -20 W-CDMA Frequency: 470 MHz Integration BW: 3.84 MHz 64 DPCH -25 ACPR (dBc) 35 30 25 20 -30 -35 -40 4.5V 5V -45 5.5V -50 15 -55 10 -60 5 -65 0 -10 0.51 Gain, Power & IP3 vs. Supply Voltage @ 470 MHz 0 -10 0.49 FREQUENCY (GHz) Reverse Isolation vs. Temperature @ 470 MHz Pout (dBm), Gain (dB), PAE (%) LINEAR & POWER AMPLIFIERS - SMT 6 2 38 Source ACPR -70 -8 -6 -4 -2 0 2 4 6 INPUT POWER (dBm) 11 - 182 7 8 10 12 14 8 10 12 14 16 18 20 22 24 Channel Power (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 26 28 HMC453QS16G / 453QS16GE v01.0205 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Broadband Gain & Return Loss @ 900 MHz Gain vs. Temperature @ 900 MHz 20 18 17 15 15 5 GAIN (dB) S21 S11 0 S22 -5 -10 -15 0.4 14 13 12 +85 C 10 -40 C 9 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 8 0.7 1.4 0.75 0.8 0.85 0.9 0.95 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature @ 900 MHz Output Return Loss vs. Temperature @ 900 MHz 1 1.05 1.1 1 1.05 1.1 1.05 1.1 0 0 +25 C +85 C -40 C RETURN LOSS (dB) -5 RETURN LOSS (dB) 11 +25 C 11 +25 C +85 C -40 C -5 -10 -10 -15 -20 -15 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 -25 0.7 1.1 0.75 0.8 FREQUENCY (GHz) 34 34 33 33 32 32 31 31 30 +25 C 28 +85 C -40 C 27 29 25 0.85 0.9 0.95 FREQUENCY (GHz) +85 C -40 C 27 26 0.8 +25 C 28 25 0.75 0.95 30 26 24 0.7 0.9 Psat vs. Temperature @ 900 MHz Psat (dBm) P1dB (dBm) P1dB vs. Temperature @ 900 MHz 29 0.85 FREQUENCY (GHz) 1 1.05 1.1 LINEAR & POWER AMPLIFIERS - SMT RESPONSE (dB) 16 10 24 0.7 0.75 0.8 0.85 0.9 0.95 1 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 183 HMC453QS16G / 453QS16GE v01.0205 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Output IP3 vs. Temperature @ 900 MHz 10 52 9 50 8 NOISE FIGURE (dB) 54 46 44 +25 C +85 C 42 -40 C 40 7 6 5 36 1 0.85 0.9 0.95 -40 C 3 2 0.8 +25 C +85 C 4 38 34 0.75 0 0.7 1 0.75 0.8 FREQUENCY (GHz) +25 C +85 C -40 C -20 -25 -30 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) ISOLATION (dB) -5 -15 0.95 1 1.05 50 45 40 35 30 Gain P1dB Psat OIP3 25 20 15 10 4.5 4.75 5 5.25 5.5 Vs (Vdc) Gain, Power & IP3 vs. Supply Current @ 900 MHz* ACPR vs. Supply Voltage @ 910 MHz CDMA IS95, 9 Channels Forward -25 50 -30 45 -35 40 -40 ACPR (dBc) 55 35 30 Gain P1dB Psat OIP3 25 20 CDMA IS95 Frequency: 910 MHz Integration BW: 1.228 MHz Forward Link, 9 Channels -45 4.5V -50 5.5V 5V -55 -60 15 -65 Source ACPR 520 560 600 640 Icq (mA) 680 720 760 800 -70 12 14 16 18 20 22 24 26 Channel Power (dBm) * Icq is controlled by varying VPD. 11 - 184 1.1 55 FREQUENCY (GHz) 10 480 0.9 Gain, Power & IP3 vs. Supply Voltage @ 900 MHz 0 -10 0.85 FREQUENCY (GHz) Reverse Isolation vs. Temperature @ 900 MHz GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) LINEAR & POWER AMPLIFIERS - SMT OIP3 (dBm) 48 11 Noise Figure vs. Temperature @ 900 MHz For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 28 30 HMC453QS16G / 453QS16GE v01.0205 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Broadband Gain & Return Loss @ 1900 MHz Gain vs. Temperature @ 1900 MHz 12 15 11 10 10 S21 0 S11 S22 8 GAIN (dB) RESPONSE (dB) 9 5 -5 7 6 4 +25 C +85 C -40 C 3 -10 11 5 2 1.4 1.6 1.8 2 0 1.7 2.2 1.8 FREQUENCY (GHz) RETURN LOSS (dB) RETURN LOSS (dB) +25 C +85 C -40 C -5 -10 1.8 1.9 2 2 2.1 -10 -15 -20 1.7 2.1 +25 C +85 C -40 C -5 1.8 FREQUENCY (GHz) Psat vs. Temperature @ 1900 MHz 34 33 33 32 32 31 31 Psat (dBm) 34 30 29 +25 C 28 +85 C -40 C 27 30 29 27 26 25 25 1.9 FREQUENCY (GHz) +25 C +85 C -40 C 28 26 1.8 1.9 FREQUENCY (GHz) P1dB vs. Temperature @ 1900 MHz P1dB (dBm) 2.1 0 0 24 1.7 2 Output Return Loss vs. Temperature @ 1900 MHz Input Return Loss vs. Temperature @ 1900 MHz -15 1.7 1.9 FREQUENCY (GHz) LINEAR & POWER AMPLIFIERS - SMT 1 -15 1.2 2 2.1 24 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 185 HMC453QS16G / 453QS16GE v01.0205 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Output IP3 vs. Temperature @ 1900 MHz 10 50 9 48 8 NOISE FIGURE (dB) 52 44 42 40 +25 C 38 +85 C -40 C 36 7 6 5 32 1 1.8 1.9 2 -40 C 3 34 1.7 +25 C +85 C 4 2 30 0 1.7 2.1 1.8 FREQUENCY (GHz) +25 C +85 C -40 C -15 1.8 1.9 2 2.1 GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) ISOLATION (dB) -5 -20 1.7 2.1 55 50 45 40 35 30 25 Gain P1dB Psat OIP3 20 15 10 5 4.5 4.75 FREQUENCY (GHz) 5 5.25 ACPR vs. Supply Voltage @ 1960 MHz CDMA 2000, 9 Channels Forward 55 -30 50 -35 45 CDMA2000 Frequency: 1.96 GHz Integration BW: 1.228 MHz Forward Link, SR1, 9 Channels -40 ACPR (dBc) 40 35 30 25 Gain P1dB Psat OIP3 20 15 -45 5V 4.5V -50 5.5V -55 -60 -65 10 Source ACPR -70 520 560 600 640 Icq (mA) 680 720 760 800 14 16 18 20 22 24 Channel Power (dBm) * Icq is controlled by varying VPD. 11 - 186 5.5 Vs (Vdc) Gain, Power & IP3 vs. Supply Current @ 1900 MHz* 5 480 2 Gain, Power & IP3 vs. Supply Voltage @ 1900 MHz 0 -10 1.9 FREQUENCY (GHz) Reverse Isolation vs. Temperature @ 1900 MHz GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) LINEAR & POWER AMPLIFIERS - SMT OIP3 (dBm) 46 11 Noise Figure vs. Temperature @ 1900 MHz For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 26 28 HMC453QS16G / 453QS16GE v01.0205 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Broadband Gain & Return Loss @ 2100 MHz Gain vs. Temperature @ 2100 MHz 10 10 9 8 7 0 GAIN (dB) RESPONSE (dB) 5 -5 -10 5 11 +25 C +85 C 4 -40 C 3 S21 S11 S22 -15 6 2 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 0 1.9 3 2 FREQUENCY (GHz) Input Return Loss vs. Temperature @ 2100 MHz +25 C +85 C -40 C RETURN LOSS (dB) RETURN LOSS (dB) -5 -10 -15 -20 2.2 2.3 +25 C +85 C -40 C -10 -15 -20 2 2.1 2.2 -25 1.9 2.3 2 FREQUENCY (GHz) Psat vs. Temperature @ 2100 MHz 36 36 34 34 32 32 Psat (dBm) 30 28 +25 C +85 C -40 C 26 30 28 24 22 22 2.1 FREQUENCY (GHz) 2.2 2.3 +25 C +85 C -40 C 26 24 2 2.1 FREQUENCY (GHz) P1dB vs. Temperature @ 2100 MHz P1dB (dBm) 2.3 0 -5 20 1.9 2.2 Output Return Loss vs. Temperature @ 2100 MHz 0 -25 1.9 2.1 FREQUENCY (GHz) LINEAR & POWER AMPLIFIERS - SMT 1 -20 20 1.9 2 2.1 2.2 2.3 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 187 HMC453QS16G / 453QS16GE v01.0205 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Output IP3 vs. Temperature @ 2100 MHz Noise Figure vs. Temperature @ 2100 MHz 60 10 9 8 NOISE FIGURE (dB) 11 OIP3 (dBm) 55 50 45 +25 C 40 +85 C -40 C 35 7 6 5 4 +25 C 3 +85 C 2 -40 C 2 2.1 2.2 2 2.1 ISOLATION (dB) -5 +25 C +85 C -40 C -15 2 2.1 2.2 2.3 GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 0 -20 1.9 2.3 Gain, Power & IP3 vs. Supply Voltage @ 2100 MHz Reverse Isolation vs. Temperature @ 2100 MHz -10 2.2 FREQUENCY (GHz) 60 50 40 30 Gain P1dB Psat OIP3 20 10 0 4.5 4.75 5 FREQUENCY (GHz) 5.25 5.5 Vs (Vdc) ACPR vs. Supply Voltage @ 2140 MHz W-CDMA, 64 DPCH Power Compression @ 2100 MHz 50 -20 45 Pout Gain PAE 40 35 -25 ACPR (dBc) 30 25 20 15 -35 5V -40 5.5V -45 -50 10 0 10 4.5V W-CDMA Frequency: 2.14 GHz Integration BW: 3.84 MHz 64 DPCH -30 -55 5 -60 12 14 16 18 20 22 INPUT POWER (dBm) 11 - 188 0 1.9 2.3 FREQUENCY (GHz) Pout (dBm), Gain (dB), PAE (%) LINEAR & POWER AMPLIFIERS - SMT 1 30 1.9 24 26 28 Source ACPR -65 12 14 16 18 20 22 24 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 26 28 HMC453QS16G / 453QS16GE v01.0205 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Power Dissipation Absolute Maximum Ratings 4 Max Pdiss @ +85C 3.5 1900 MHz 3 2.5 2 900 MHz 1.5 Collector Bias Voltage (Vcc) +6.0 Vdc Control Voltage (Vpd) +5.4 Vdc RF Input Power (RFIN)(Vs = Vpd = +5Vdc) +32 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 58.5 mW/°C above 85 °C) 3.8 W Thermal Resistance (junction to ground paddle) 17.1 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C 1 0 5 10 15 20 25 INPUT POWER (dBm) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 11 LINEAR & POWER AMPLIFIERS - SMT POWER DISSIPATION (W) 4.5 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC453QS16G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC453QS16GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H453 XXXX [2] H453 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 189 HMC453QS16G / 453QS16GE v01.0205 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Pin Descriptions LINEAR & POWER AMPLIFIERS - SMT 11 Pin Number Function Description Interface Schematic 1, 2, 4, 5, 7-10, 13-16 GND These pins & package bottom must be connected to RF/DC ground. 3 VPD Power control pin. For maximum power, this pin should be connected to 5V. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. 6 RFIN This pin is DC coupled. Off chip matching components are required. See Application Circuit herein. 11, 12 RFOUT RF output and DC Bias input for the output amplifier stage. Off chip matching components are required. See Application Circuit herein. 400 MHz Application Circuit This circuit was used to specify the performance for 400-410 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. Recommended Component Values Impedance 12 pF 8.2 pF C3 6.8 pF C4, C7 100 pF C6 39 pF TL1 TL2 TL3 TL4 TL5 TL6 C8, C9 2.2 μF L1 47 nH 50 Ohm 50 Ohm 50 Ohm 50 Ohm 50 Ohm 50 Ohm Physical Length 0.22” 0.04” 0.04” 0.16” 0.04” 0.05” L2 40 nH Electrical Length 5° 1° 1° 4° 1° 1° L3, L4 4.3 nH R1 5.1 Ohm PCB Material: 10 mil Rogers 4350, Er = 3.48 11 - 190 C1, C5 C2, C10 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC453QS16G / 453QS16GE v01.0205 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 400 MHz Evaluation PCB List of Materials for Evaluation PCB 110865-400 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 2 mm DC Header C1, C5 12 pF Capacitor, 0402 Pkg. C2, C10 8.2 pF Capacitor, 0402 Pkg. C3 6.8 pF Capacitor, 0402 Pkg. C4, C7 100 pF Capacitor, 0402 Pkg. C6 39 pF Capacitor, 0402 Pkg. C8, C9 2.2 μF Capacitor, Tantalum L1 47 nH Inductor, 0603 Pkg. L2 40 nH Inductor, 0402 Pkg. L3, L4 4.3 nH Inductor, 0402 Pkg. R1 5.1 Ohm Resistor, 0402 Pkg. U1 HMC453QS16G / HMC453QS16GE Linear Amp PCB [2] 110863 Evaluation PCB, 10 mils The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. LINEAR & POWER AMPLIFIERS - SMT 11 [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 191 HMC453QS16G / 453QS16GE v01.0205 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.2 - 2.4 GHz 470 MHz Application Circuit This circuit was used to specify the performance for 450-496 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. LINEAR & POWER AMPLIFIERS - SMT 11 11 - 192 Recommended Component Values C1 12 pF C2 8.2 pF C3 6.8 pF C4, C7 100 pF C5 10 pF C6 39 pF C8, C9 2.2 μF C10 5.6 pF TL1 TL2 TL3 TL4 TL5 TL6 50 Ohm 50 Ohm 50 Ohm 50 Ohm 50 Ohm 50 Ohm L1 47 nH Physical Length 0.22” 0.04” 0.04” 0.16” 0.04” 0.05” L2 40 nH Electrical Length 6° 1° 1° 4° 1° 1° L3, L4 4.3 nH R1 5.1 Ohm Impedance PCB Material: 10 mil Rogers 4350, Er = 3.48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC453QS16G / 453QS16GE v01.0205 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.2 - 2.4 GHz 470 MHz Evaluation PCB List of Materials for Evaluation PCB 110976-470 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 2 mm DC Header C1 12 pF Capacitor, 0402 Pkg. C2 8.2 pF Capacitor, 0402 Pkg. C3 6.8 pF Capacitor, 0402 Pkg. C4, C7 100 pF Capacitor, 0402 Pkg. C5 10 pF Capacitor, 0402 Pkg. C6 39 pF Capacitor, 0402 Pkg. C8, C9 2.2 μF Capacitor, Tantalum C10 5.6 pF Capacitor, 0402 Pkg. L1 47 nH Inductor, 0603 Pkg. L2 40 nH Inductor, 0402 Pkg. L3, L4 4.3 nH Inductor, 0402 Pkg. R1 5.1 Ohm Resistor, 0402 Pkg. U1 HMC453QS16G / HMC453QS16GE Linear Amp PCB [2] 110863 Evaluation PCB, 10 mils The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. LINEAR & POWER AMPLIFIERS - SMT 11 [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 193 HMC453QS16G / 453QS16GE v01.0205 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.2 - 2.4 GHz 900 MHz Application Circuit This circuit was used to specify the performance for 810-960 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. LINEAR & POWER AMPLIFIERS - SMT 11 11 - 194 Impedance TL1 TL2 TL3 TL4 Recommended Component Values 50 Ohm 50 Ohm 50 Ohm 50 Ohm C1 5 pF Physical Length 0.26” 0.08” 0.12” 0.15” C2, C3 3.3 pF Electrical Length 14° 4° 6° 8° C4, C7 100 pF C5 8.2 pF PCB Material: 10 mil Rogers 4350, Er = 3.48 C6 56 pF C8, C9 2.2 μF C10 1 pF L1 30 nH L2 20 nH R1 5.6 Ohm For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC453QS16G / 453QS16GE v01.0205 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.2 - 2.4 GHz 900 MHz Evaluation PCB List of Materials for Evaluation PCB 108709-900 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 2 mm DC Header C1 5.0 pF Capacitor, 0402 Pkg. C2, C3 3.3 pF Capacitor, 0402 Pkg. C4, C7 100 pF Capacitor, 0402 Pkg. C5 8.2 pF Capacitor, 0402 Pkg. C6 56 pF Capacitor, 0402 Pkg. C8, C9 2.2 μF Capacitor, Tantalum C10 1.0 pF Capacitor, 0402 Pkg. L1 30 nH Inductor, 0402 Pkg. L2 20 nH Inductor, 0402 Pkg. R1 5.6 Ohm Resistor, 0402 Pkg. U1 HMC453QS16G / HMC453QS16GE Linear Amp PCB [2] 108707 Evaluation PCB, 10 mils The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. LINEAR & POWER AMPLIFIERS - SMT 11 [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 195 HMC453QS16G / 453QS16GE v01.0205 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.2 - 2.4 GHz 1900 MHz Application Circuit This circuit was used to specify the performance for 1710-1990 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. LINEAR & POWER AMPLIFIERS - SMT 11 11 - 196 Impedance TL1 TL2 Recommended Component Values 50 Ohm 50 Ohm C1 Physical Length 0.04” 0.04” C2 1.2 pF Electrical Length 4° 4° C3, C6 100 pF C4 4.7 pF PCB Material: 10 mil Rogers 4350, Er = 3.48 0.8 pF C5 15 pF C7, C8 2.2 μF L1 18 nH L2 20 nH R1 5.6 Ohms For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC453QS16G / 453QS16GE v01.0205 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.2 - 2.4 GHz 1900 MHz Evaluation PCB List of Materials for Evaluation PCB 108721-1900 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 2 mm DC Header C1 0.8 pF Capacitor, 0402 Pkg. C2 1.2 pF Capacitor, 0402 Pkg. C3, C6 100 pF Capacitor, 0402 Pkg. C4 4.7 pF Capacitor, 0402 Pkg. C5 15 pF Capacitor, 0402 Pkg. C7, C8 2.2 μF Capacitor, Tantalum L1 18 nH Inductor, 0402 Pkg. L2 20 nH Inductor, 0402 Pkg. R1 5.6 Ohm Resistor, 0402 Pkg. U1 HMC453QS16G / HMC453QS16GE Linear Amp PCB [2] 108719 Evaluation PCB, 10 mils The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. LINEAR & POWER AMPLIFIERS - SMT 11 [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 197 HMC453QS16G / 453QS16GE v01.0205 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.2 - 2.4 GHz 2100 MHz Application Circuit This circuit was used to specify the performance for 2100-2170 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. LINEAR & POWER AMPLIFIERS - SMT 11 11 - 198 TL1 TL2 50 Ohm 50 Ohm C1 0.8 pF Physical Length 0.04” 0.04” C2 1 pF Electrical Length 5° 5° C3, C6 100 pF C4 3.9 pF Impedance PCB Material: 10 mil Rogers 4350, Er = 3.48 Recommended Component Values C5 15 pF C7, C8 2.2 μF L1 12 nH L2 20 nH R1 5.1 Ohm For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC453QS16G / 453QS16GE v01.0205 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.2 - 2.4 GHz 2100 MHz Evaluation PCB List of Materials for Evaluation PCB 109994-2100 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 2 mm DC Header C1 0.8 pF Capacitor, 0402 Pkg. C2 1.0 pF Capacitor, 0402 Pkg. C3, C6 100 pF Capacitor, 0402 Pkg. C4 3.9 pF Capacitor, 0402 Pkg. C5 15 pF Capacitor, 0402 Pkg. C7, C8 2.2 μF Capacitor, Tantalum L1 12 nH Inductor, 0402 Pkg. L2 20 nH Inductor, 0402 Pkg. R1 5.1 Ohm Resistor, 0402 Pkg. U1 HMC453QS16G / HMC453QS16GE Linear Amp PCB [2] 108719 Evaluation PCB, 10 mils The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. LINEAR & POWER AMPLIFIERS - SMT 11 [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 199