DSK MBRF1030 Schottky barrier rectifier Datasheet

Diode Semiconductor Korea
MBRF1030 - - - MBRF10100
VOLTAGE RANGE: 30 - 100 V
CURRENT: 10 A
SCHOTTKY BARRIER RECTIFIERS
FEATURES
ITO-220AC
High s urge capacity.
For us e in low voltage, high frequency inverters , free
111wheeling, and polarity protection applications .
4.5± 0.2
10.2± 0.2
3.1+0.2
-0.1
4.0± 0.3
13.5± 0.5
Cas e:JEDEC ITO-220AC,m olded plas tic body
Term inals :Solderable per MIL-STD-750,
1 1
2
? 3.2± 0.2
PIN
1
MECHANICAL DATA
8.2± 0.2
Guard ring for over voltage protection.
16.5± 0.3
15.2± 0.5
High current capacity, low forward voltage drop.
φ 3 .3± 0.1
Metal s ilicon junction, m ajority carrier conduction.
2.6± 0.2
1.4± 0.1
0.6± 0.1
Method 2026
Polarity: As m arked
0.6± 0.1
5.0± 0.1
Pos ition: Any
Dimensions in millimeters
Weight: 0.056 ounces,1.587 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF
UNITS
1030 1035 1040 1045 1050 1060 1090 10100
Maximum recurrent peak reverse voltage
V RRM
30
35
40
45
50
60
90
100
V
Maximum RMS V oltage
V RMS
21
25
28
32
35
42
63
70
V
Maximum DC blocking voltage
V DC
30
35
40
45
50
60
90
100
V
Maximum average forw ard total device
m rectified current @TC = 133°C
IF(AV)
10
A
Peak forw ard surge current 8.3ms single half
b sine-w ave superimposed on rated load
IFSM
150
A
Maximum forw ard
(I F=10A,TC=25
voltage
(I F=10A,TC=125
(Note 1)
(I F=20A ,TC=25
(IF=20A ,TC=125
Maximum reverse current
at rated DC blocking voltage
)
)
)
VF
)
@TC =25
@TC =125
IR
-
0.80
0.80
0.57
0.84
0.70
0.95
0.65
0.95
0.72
0.85
0.75
0.1
6.0 3)
15
Maximum thermal resistance (Note2)
R θJC
4.0
Operating junction temperature range
TJ
- 55 ---- + 150
TSTG
- 55 ---- + 175
Storage temperature range
V
mA
/W
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance from junction to case.
3.T C =100
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MBRF1030 - - - MBRF10100
Diode Semiconductor Korea
AVERAGE FORWARD OUTPUT CURRENT,
AMPERES
FIG.2 -- FORWARD DERATING CURVE
150
120
AMPERES
PEAK FORWARD SURGE CURRENT,
FIG.1 -- PEAK FORWARD SURGE CURRENT
8.3ms Single Half Sine Wave
TJ=125
90
60
30
0
10
1
100
10
8
6
4
2
0
25
50
NUMBER OF CYCLES AT 60HZ
MBR1080-MBR10100
MBR1050-MBR1060
10
P u ls e w id t h = 3 0 0
1 % D u t y C y c le
.4
.6
.8
1.0
1 .2
1 .4
1 .6
1 .8
s
2.0
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
2.2
INSTANTANEOUS REVERSE CURRENT,
MICRO AMPERES
INSTANTANEOUS FORWARD CURRENT,
AMPERES
MBR1030-MBR1045
.2
125
150
FIG.4 -- TYPICAL REVERSE CHARACTERISTIC
200
1
100
CASE TEMPERATURE,
FIG.3 -- TYPICAL FORWARD CHARACTERISTIC
100
75
1.0
MBRF1030-MBRF1060
TC=125
MBRF1090-MBRF10100
0.1
T C=25
0.01
.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
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