FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET 600 V, 12 A, 650 m Features Description • RDS(on) = 530 m (Typ.) @ VGS = 10 V, ID = 6 A UniFETTM II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • Low Gate Charge ( Typ. 26 nC) • Low Crss ( Typ. 12 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply D G G D S TO-220 G D TO-220F S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage FDP12N60NZ FDPF12N60NZ 600 Unit V ±30 V - Continuous (TC = 25oC) 12 12* 7.2 7.2* ID Drain Current - Continuous (TC = 100oC) IDM Drain Current - Pulsed EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 12 A EAR Repetitive Avalanche Energy (Note 1) 24 mJ 20 V/ns dv/dt 48 (Note 2) Peak Diode Recovery dv/dt 48* 565 MOSFET dv/dt Ruggedness (Note 3) A mJ 10 V/ns (TC = 25oC) 240 39 W - Derate above 25oC 2.0 0.3 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (Note 1) A -55 to +150 oC 300 oC *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP12N60NZ FDPF12N60NZ RJC Thermal Resistance, Junction to Case, Max. 0.52 3.2 RCS Thermal Resistance, Case to Sink Typ. 0.5 - RJA Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 ©2010 Fairchild Semiconductor Corporation FDP12N60NZ / FDPF12N60NZ Rev. C1 1 Unit oC/W www.fairchildsemi.com FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET March 2013 Device Marking FDP12N60NZ Device FDP12N60NZ Package TO-220 Reel Size - Tape Width - Quantity 50 FDPF12N60NZ FDPF12N60NZ TO-220F - - 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS BVDSS TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250A, VGS = 0V, TJ = 25oC 600 - - V ID = 250A, Referenced to 25oC - 0.6 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V - - 1 VDS = 480V, TC = 125oC - - 10 A IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±10 A On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250A 3 - 5 V Static Drain to Source On Resistance VGS = 10V, ID = 6A - 0.53 0.65 gFS Forward Transconductance VDS = 20V, ID = 6A - 13.5 - S VDS = 25V, VGS = 0V f = 1MHz - 1260 1676 pF - 150 200 pF - 12 18 pF - 26 34 nC - 6 - nC - 10 - nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 480V, ID = 12A VGS = 10V (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 300V, ID = 12A RG = 25 (Note 4) - 25 60 ns - 50 110 ns - 80 170 ns - 60 130 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 12 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 48 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 12A - - 1.4 V trr Reverse Recovery Time - 350 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 12A dIF/dt = 100A/s - 2.2 - C Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L =7.85mH, IAS = 12A, VDD = 50V, RG = 25, Starting TJ = 25°C 3: ISD 12A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25°C 4: Essentially Independent of Operating Temperature Typical Characteristics ©2010 Fairchild Semiconductor Corporation FDP12N60NZ / FDPF12N60NZ Rev. C1 2 www.fairchildsemi.com FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 30 ID, Drain Current[A] 10 ID, Drain Current[A] VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 1 o 10 150 C o 25 C o -55 C 1 *Notes: 1. 250s Pulse Test * Notes : 1. VDS = 20V 2. 250s Pulse Test o 2. TC = 25 C 0.1 0.1 0.1 1 VDS, Drain-Source Voltage[V] 10 20 3 4 5 6 7 VGS, Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 1.0 100 0.9 IS, Reverse Drain Current [A] RDS(on) [], Drain-Source On-Resistance Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.8 VGS = 10V 0.7 VGS = 20V 0.6 o 150 C 10 o 25 C Notes: 1. VGS = 0V o 2. 250s Pulse Test * Note : TJ = 25 C 0.5 0 5 10 15 20 ID, Drain Current [A] 25 1 0.4 30 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] 1000 Coss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd * Note: 1. VGS = 0V 2. f = 1MHz 10 0.1 1.4 10 Ciss 100 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 5000 Capacitances [pF] 8 1 10 VDS, Drain-Source Voltage [V] ©2010 Fairchild Semiconductor Corporation FDP12N60NZ / FDPF12N60NZ Rev. C1 Crss VDS = 120V VDS = 300V VDS = 480V 8 6 4 2 * Note : ID = 12A 0 30 3 0 6 12 18 24 Qg, Total Gate Charge [nC] 30 www.fairchildsemi.com FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 * Notes : 1. VGS = 0V 2. ID = 250uA 0.8 -80 -40 0 40 80 120 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10V 2. ID = 6A 0.5 0 -80 160 Figure 9. Maximum Safe Operating Area -FDPF12N60NZ -40 0 40 80 120 o TJ, Junction Temperature [ C] Figure 10. Maximum Safe Operating Area -FDP12N60NZ 100 100 10s 30s 100s 10 ID, Drain Current [A] 100s ID, Drain Current [A] 160 1ms 10ms 1 Operation in This Area is Limited by R DS(on) DC * Notes : 0.1 10 1ms 10ms DC 1 Operation in This Area is Limited by R DS(on) * Notes : 0.1 o o 1. TC = 25 C 1. TC = 25 C o o 2. TJ = 150 C 3. Single Pulse 2. TJ = 150 C 3. Single Pulse 0.01 0.01 1 10 100 VDS, Drain-Source Voltage [V] 1000 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 11. Maximum Drain Current vs Case Temperature 15 ID, Drain Current [A] 12 9 6 3 0 25 50 75 100 125 o TC, Case Temperature [ C] ©2010 Fairchild Semiconductor Corporation FDP12N60NZ / FDPF12N60NZ Rev. C1 150 4 www.fairchildsemi.com FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET Typical Performance Characteristics (Continued) FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET Figure 12. Transient Thermal Response Curve -FDPF12N60NZ Thermal Response [ZJC] 5 0.5 1 0.2 0.1 0.05 0.1 0.02 P 0.01 DM t 0.01 * Notes : Single pulse 1 t 2 o 1. ZJC(t) = 3.2 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t) 0.001 -5 10 -4 10 -3 10 -2 -1 10 10 1 Rectangular Pulse Duration [sec] 2 10 10 3 10 Figure 13. Transient Thermal Response Curve -FDP12N60NZ Thermal Response [ZJC] 1 0.5 0.2 0.1 0.1 0.05 0.02 P DM t 0.01 1 t 0.01 2 * Notes : Single pulse o 1. ZJC(t) = 0.52 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t) 0.001 -5 10 ©2010 Fairchild Semiconductor Corporation FDP12N60NZ / FDPF12N60NZ Rev. C1 -4 10 -3 10 -2 -1 10 10 1 Rectangular Pulse Duration [sec] 5 10 2 10 3 10 www.fairchildsemi.com FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms ©2010 Fairchild Semiconductor Corporation FDP12N60NZ / FDPF12N60NZ Rev. C1 6 www.fairchildsemi.com FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop ©2010 Fairchild Semiconductor Corporation FDP12N60NZ / FDPF12N60NZ Rev. C1 7 www.fairchildsemi.com FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET Mechanical Dimensions TO-220B03 ©2010 Fairchild Semiconductor Corporation FDP12N60NZ / FDPF12N60NZ Rev. C1 8 www.fairchildsemi.com FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET Package Dimensions (Continued) TO-220M03 Dimensions in Millimeters ©2010 Fairchild Semiconductor Corporation FDP12N60NZ / FDPF12N60NZ Rev. C1 9 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2010 Fairchild Semiconductor Corporation FDP12N60NZ / FDPF12N60NZ Rev. C1 10 www.fairchildsemi.com FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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