NJSEMI MJE702 Plastic darlington complementary silicon power transistor Datasheet

^Eini-donduatoi ^Products., Una.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
PNP
Plastic Darlington
Complementary Silicon Power
Transistors
. . . designed for general-purpose amplifier and low-speed switching applications.
•
•
•
High DC Current Gain —
hFE = 2000 (Typ) @ IC = 2.0 Adc
Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage
Multiplication
Choice of Packages —
MJE700 and MJE800 series
T0220AB, MJE700T and MJE800T
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
MJE700.T
MJE800J
MJE702
MJE703
MJE802
MJE803
Unit
60
80
Vdc
80
Vdc
VCEO
VCB
VEB
IG
IB
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation @ TC = 25°C
Derate above 25°C
60
Vdc
4.0
Adc
0.1
Adc
CASE 77
TO-220
40
0.32
50
0.40
PD
TJ, Tstg
Operating and Storage Junction
Temperature Range
5.0
°C
THERMAL CHARACTERISTICS
Symbol
Thermal Resistance, Junction to Case
CASE 77
TO-220
Rejc
4.0 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
40 WATT
50 WATT
Watts
W/°C
-55to+150
Characteristic
MJE700,T
MJE702
MJE703
NPN
MJE800,T
MJE802
MJE803
Max
Unit
TO-225AA TYPE
MJE700-703
MJE800-803
°C/W
3.13
2.50
50
40
TO-220ABg
30
a
cc
20
TO-126
CASE 221A-06
TO-220AB
MJE700T
MJE800T
10
25
50
75
100
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Quality Semi-Conductors
125
150
MJE700.T MJE702 MJE703 MJE80O.T MJE802 MJE803
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Characteristic
|
Min
Max
60
80
—
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1 )
OC = 50 mAdc, IB = 0)
MJE700.T, MJE800.T
MJE702, MJE703, MJE802, MJE803
Collector Cutoff Current
(VCE = 60 vdc, IB = o)
(VCE = so vdc, IB = o)
MJETOOJ, MJESOO.T
MjE/oa, MJETOS, MJE802, MJESOS
V(BR)CEO
!CEO
Vdc
uAdc
—
100
100
100
500
Collector Cutoff Current (VCB = Rated BVcEQ. !E = °)
(VCB = Rated BVCEO, IE = 0, TC = 100°C)
ICBO
—
Emitter Cutoff Current (VBE = 5.0 Vdc, Ic = 0)
IEBO
—
2.0
750
750
100
—
uAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (1)
(lc = 1 .5 Adc, VCE = 3 -0 vdc)
(IC = 2.0 Adc, VCE = 3.0 Vdc)
(IC = 4.0 Adc, VCE = 3.0 Vdc)
Collector-Emitter Saturation Voltage (1)
(IC = 1 .5 Adc, IB = 30 mAdc)
(IC = 2.0 Adc, IB = 40 mAdc)
(IC = 4.0 Adc, IB = 40 mAdc)
Base-Emitter On Voltage (1)
(IC = 1 .5 Adc, VCE = 3.0 Vdc)
(IC = 2.0 Adc, VCE = 3.0 Vdc)
(IC = 4.0 Adc, VCE = 3-° Vdc)
DYNAMIC CHARACTERISTICS
hFE
MJE700.T, MJE702, MJE800.T, MJE802
MJE703, MJE803
All devices
Vdc
VcE(sat)
MJE700.T, MJE702, MJE800.T, MJE802
MJE703, MJE803
All devices
—
2.5
2.8
3.0
Vdc
vBE(on)
MJE700J, MJE702, MJE800,T, MJE802
MJE703, MJE803
AN devices
Small-Signal Current Gain (lc = 1.5 Adc, VCE = 3-° Vdc ' f - 1-°MHz)
(1) Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
—
hfe
1.0
2.5
2.5
3.0
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