*,, Una.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MD918, A, B (SILICON)
MD918F, AF, BF
NPN SILICON
MULTIPLE SILICON ANNULAR TRANSISTORS
MULTIPLE TRANSISTORS
. . . designed for UM at differential amplifiers, dual high frequency
amplifier!, front end detectors and temperature compensation
applications.
C>-»-^r*"
•^3-aU^
•
Low Collector-Emitter Saturation Voltage —
VCE(Mt) ~ °2 We <M*X> * 'C " 10 mAdc
• DC Current Gain - 50 (Mini 9 Ic = 3.0 mAdc
-—A ^*t
• High Current-Gain - Bandwidth Product fj - 600 MHz S> Ic - 4-0 mAdc
ft
MOC18
MO91«A
MO01IB
n« i coiLEaon
Rating
Collector -Emitter Voltage
Symbol
Value
Unit
V CEO
IS
Vdc
Collector-Bate Voltage
VCB
30
Vdc
Emitter Base Voltage
VEB
3.0
Vdc
Collector Current - Continuous
IG
Tots' Power Dissipation (? TA * 25°C
MD918.A.B
MD918F,AF,BF
Derate Above 26°C
MD918.A.B
M09t8F.AF.BF
PD
Total Power Dissipation ® TQ - 25°C
MD918.A.B
MD918F,AF,BF
Derate Above 25°C
MD918.A.B
MD918f.AF.BF
PD
Operating and Storage Junction
Temperature Range
Tj.T,,,
All Die
560
360
600
400
mW
3.14
2.0
3-4Z
228
n*»/°C
1.4
0.7
2.0
1.4
Watts
8.0
4.0
11.4
8.0
mV»/°C
-65 to +200
Thermal Resistance, Junction to Case
MD918.A.B
MD918F.AF.BF
Symbol
One Die
319
500
292
438
126
260
87.6
126
HI
R *4A
Unit
Juno Ion to
Caaa
40
0
•u
nw
t.40
OJ»
-_IL
1
_ J.
0.
' IT tl»
-JL-1^!rtK-
CHI
V
C
"Hul
•AX
^
ftr-
MM1IF
MINI IAF
MD91 IBF
r.
~t
T'
1
1
1=
1
1
1z
=3'
I—i.U
T'lr
J.
riz
STYLE 1
PINI U
1. I IITTED
%
83
7S
CT1
tn
--!•
I
C
3E
CAtEatWl?
"c/w
"«JC
*iNr~
V^p
r— inuuaBTiMi—nre
if
°C/W
Junction to
Coupling Ftctori
MD91B,A,B
MD918F.AF.BF
Equal ^ower
"ajA<H
i
JUo
\ *
r—
°C
All Die
Charactarietic
run
*
THERMAL CHARACTERISTICS
ThermaJ Resistance, Junction TO
Ambient
MO918,A,B
MO918F.AF.BF
JEATtN
2.IASI
1. EDITTCa
4. OMITTED
» EMrTER
1 MM
J.COUECTOS
B. OHITTEO
mAdc
SO
One Di.
^«L
K
STYLtli
MAXIMUM RATINGS
T
c
t. E
t. U \tt
7. C )L LECTOR
1- C IUECTOH
CAM tOA^J
H
|
-u
.. w™r"«sr %sr
t,10
K
>K
U4I UM
till
S Ul
w
: ' ,H
4
^-iF
1
.
•V
^8 - &
H - It^V
it Ul
"H
J--U j« Ja 1C
.
.
'» measured with the device soldered into a typical printed circuit board.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice, fnfbrmation furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors entourages customers to verify that datasheets are current before placing orders.
Oiinlitv
MD918,A.B, MD918F.AF.BF (continued)
THERMAL COUPLING AND EFFECTIVE THERMAL RESISTANCE
In multiple chip devices. coupling of h««t httween die occurl.
The junction temperature cm be calculated «i follows:
111
PD1
Where A Tjj is the Chang* in junction temperature of die 1
R 8 1 tnd H»2 '• the thermal resistance of die 1 and die 2
PD , and PD j ii th* power diuipetad in die 1 end die 2
k$2 n the thermal coupling between die 1 end die 2
where: Pryr is the total package power dissipation.
Assuming equal thermal refinance for each die. equation { 1 1
simplifies to
(31
(PO,
For the conditions where PQI • PD2, Pryr " 2Po.
equation (31 can be further simplified end by iubstituting into
equation (2) results in
An effective package thermal resistance can be defined a>
follow*:
R »<EFF)
(2) RSI.EFFI -
ELECTRICAL CHARACTERISTICS <TA - 25°C unless otherwise noted. I
Symbol
Characteristic
I
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage'1'
dC • 3.0 mAdc. IB - 01
Collector-Ban Breakdown Voltane
(l c - I.OuAdc, IE -0)
Emitter-Bat* Breakdown Voltage
(l E -10<iAac. Ic-OI
Collector Cutoff Current
(V C B - 15 Vdc. I E -OI
|VCB - 15 Vdc. l£ - 0. T A - 150°CI
ON CHARACTERISTICS
DC Current Gain
(IC • 3,0 mAdc, VCE • 5.0 Vdc)
Collector-Emitter Saturation Voltage
dc" 10 mAdc, IB- 1.0 Adc)
Base-Emitter Saturation Voltage
(lc - 10 mAdc, I8 - 1.0 mAdc)
DYNAMIC CHARACTERISTICS
Base-Emitter Voltage Differential Gradient
dc - 1 .0 mAdc, V CE - S.O Vde,
T A --5Sto+12S°CI
Unit
Mio
Typ
Max
BVCEO
15
-
-
Vdc
BVcBO
30
~
~
Vdc
BVEBO
3.0
-
~
Vdc
-
-
10
1.0
nAdc
MAdc
"FE
50
165
-
-
vCE(sat)
-
0.09
0.2
Vdc
v BE(sat)
-
0.86
0.9
Vdc
*T
600
1150
—
MHz
Cob
-
1.1
1.7
pF
Cib
^
1.15
20
oF
NF
~
~
6.0
dB
0.8
0.9
-
1.0
1.0
-
-
10
S.O
-
-
20
10
ICBO
Current-Gain - Bandwidth Product
(IC • 4.0 mAdc, VCE • 10 Vdc. f - 100 MHz]'
Output Capacitance
(VCB" 10 Vdc, lg-0, f- 100kHz)
Input Capacitance
(VBE - O.S Vdc. IC - 0, 1 - 100 kHz)
Noise Figure
(1C- 1 0 mAdc. V CE - 6.0 Vac. R s - 400 n, f * 60 MHz)
MATCHING CHARACTERISTICS
DC Current-Gain Ratio'21
dc - 1-0 mAdc. Vce • 5.0 Vdc)
MD918B.BF
MDS18A.AF
Base-Emitter Voltage Differential
(1C- 1.0 mAdc, VCE-D.O Vdc)
d
Values for th* coupling factors wh*n either the caie or the
ambient is u«ed as a reference are given in the table on page 1.
"FEl'hFE2
mVdc
IVBE1-VBE2l
MD918B.BF
MD918A.AF
i|VBE1-VBE2l
MD9188.AF.BF
"TA
MO918A
(1) Pulse Test: Pulse Width <300 ui, Duly Cycle <2.0%.
(2) The lowest here reading is taken « hpEi for this ratio.
(iV/dc
°C