HMC463LP5 v00.0404 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC463LP5 is ideal for: Gain: 13 dB • Telecom Infrastructure Noise Figure: 2.8 dB @ 10 GHz • Microwave Radio & VSAT P1dB Output Power: +18 dBm @ 10 GHz • Military EW, ECM & C3I Supply Voltage: +5.0V @ 60 mA • Test Instrumentation 50 Ohm Matched Input/Output • Fiber Optics 25 mm2 Leadless Package Functional Diagram General Description The HMC463LP5 is a GaAs MMIC PHEMT Low Noise AGC Distributed Amplifier packaged in a leadless 5 x 5 mm surface mount package which operates between 2 and 20 GHz. The amplifier provides 13 dB of gain, 3.0 dB noise figure and 18 dBm of output power at 1 dB gain compression while requiring only 60 mA from a +5V supply. An optional gate bias (Vgg2) is provided to allow Adjustable Gain Control (AGC) of 8 dB typical. Gain flatness is excellent at ±0.5 dB from 6 - 18 GHz making the HMC463LP5 ideal for EW, ECM RADAR and test equipment applications. The HMC463LP5 LNA I/Os are internally matched to 50 Ohms and are internally DC blocked. Vgg2: Optional Gate Bias for AGC Electrical Specifications, TA = +25° C, Vdd= 5V, Idd= 60 mA* Parameter Min. Frequency Range Gain Typ. Max. Min. 2.0 - 6.0 10 Typ. Max. Min. 6.0 - 18.0 13 9 12 8 Max. 18.0 - 20.0 GHz 11 dB ±0.5 Gain Variation Over Temperature 0.010 0.015 0.010 0.015 0.010 0.015 dB/ °C Noise Figure 3.0 4.0 3.0 5.0 5.5 6.5 dB Input Return Loss 15 13 12 dB Output Return Loss 13 10 10 dB 16 19 11 16 ±0.5 10 dB 12 dBm Saturated Output Power (Psat) 21 19 19 dBm Output Third Order Intercept (IP3) 30 24 22 dBm Supply Current (Idd) (Vdd= 5V, Vgg1= -0.9V Typ.) 60 60 60 mA * Adjust Vgg1 between -2 to -0V to achieve Idd= 60 mA typical. 8 - 262 Units Gain Flatness Output Power for 1 dB Compression (P1dB) ±0.5 Typ. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC463LP5 v00.0404 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz MMIC PUMPED MIXER GainGaAs & Return LossSUB-HARMONICALLY Gain vs. Temperature 20 20 15 18 0 -5 -10 12 10 8 -15 6 -20 4 -25 2 +25C +85C -40C 0 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 FREQUENCY (GHz) Input Return Loss vs. Temperature 10 12 14 16 18 20 22 Output Return Loss vs. Temperature 0 0 +25C +85C -40C -5 OUTPUT RETURN LOSS (dB) INPUT RETURN LOSS (dB) 8 FREQUENCY (GHz) -10 -15 -20 -25 -30 AMPLIFIERS - SMT 14 S21 S11 S22 -30 +25C +85C -40C -5 -10 -15 -20 0 2 4 6 8 10 12 14 16 18 20 0 22 2 4 6 FREQUENCY (GHz) 0 10 9 -10 NOISE FIGURE (dB) +25C +85C -40C -25 12 14 16 18 20 22 18 20 22 +25C +85C -40C 8 -20 10 Noise Figure vs. Temperature -5 -15 8 FREQUENCY (GHz) Reverse Isolation vs. Temperature REVERSE ISOLATION (dB) 8 16 5 GAIN (dB) RESPONSE (dB) 10 17 - 25 GHz -30 -35 -40 -45 7 6 5 4 3 2 -50 1 -55 -60 0 0 2 4 6 8 10 12 14 FREQUENCY (GHz) 16 18 20 22 0 2 4 6 8 10 12 14 16 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 263 HMC463LP5 v00.0404 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz GaAs MMIC SUB-HARMONICALLY Psat PUMPED MIXER P1dB vs. Temperature vs. Temperature 26 26 24 24 22 22 20 20 Psat (dBm) P1dB (dBm) 18 16 14 12 16 14 +25C +85C -40C 12 10 10 8 8 6 6 0 2 4 6 8 10 12 14 16 18 20 0 22 2 4 6 FREQUENCY (GHz) 32 26 24 22 +25C +85C -40C 16 14 14 16 18 20 22 24 4.5 22 4 20 3.5 18 3 16 2.5 14 2 12 1.5 10 8 1 Gain P1dB Psat Noise Figure 0.5 0 6 0 2 4 6 8 10 12 14 16 18 20 22 4.5 5 FREQUENCY (GHz) Idd (mA) Noise Figure & Supply Current vs. Control Voltage @ 10 GHz Gain P1dB 75 5.5 70 5 65 4.5 60 4 55 3.5 50 3 45 2.5 40 2 35 1.5 1 30 OIP3 25 Noise Figure Idd 0.5 0 20 0 Vgg2 (Vdc) 0.2 0.4 0.6 0.8 1 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 Vgg2 (Vdc) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 1 NOISE FIGURE (dB) 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 5.5 Vdd (Vdc) Gain, P1dB & Output IP3 vs. Control Voltage @ 10 GHz GAIN (dB), P1dB (dBm), OIP3 (dBm) 12 Noise Figure (dB) OIP3 (dBm) 28 18 10 Gain, Power & Noise Figure vs. Supply Voltage @ 10 GHz, Fixed Vgg1 Output IP3 vs. Temperature 20 8 FREQUENCY (GHz) 30 8 - 264 17 - 25 GHz 18 +25C +85C -40C GAIN (dB), P1dB (dBm), Psat (dBm) AMPLIFIERS - SMT 8 HMC463LP5 v00.0404 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz GAIN (dB) 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 Vgg-1.3 V Vgg=-1.2 V Vgg=-1.1 V Vgg=-1.0V Vgg=-0.9 V 0 2 4 6 8 10 Vgg=-0.8 V Vgg=-0.6 V Vgg=-0.4 V Vgg=-0.2 V Vgg=0 V 12 14 16 18 20 22 Drain Bias Voltage (Vdd) +9.0 Vdc Gate Bias Voltage (Vgg1) -2.0 to 0 Vdc Gate Bias Voltage (Vgg2)(AGC) (Vdd -9.0) Vdc to +2.0 Vdc RF Input Power (RFin)(Vdd = +5.0 Vdc) +23 dBm Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 50 mW/°C above 85 °C) 3.25 W Thermal Resistance (channel to ground paddle) 20 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C FREQUENCY (GHz) Typical Supply Current vs. Vdd Outline Drawing Vdd (V) Idd (mA) +4.5 58 +5.0 60 +5.5 62 8 AMPLIFIERS - SMT Absolute Maximum Ratings Gain @ Several Control Voltages NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 3. DIE THICKNESS IS 0.004 (0.100) 4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. BOND PAD METALIZATION: GOLD For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 265 HMC463LP5 v00.0404 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz AMPLIFIERS - SMT 8 8 - 266 Pad Descriptions Pad Number Function Description 1, 3, 4, 6-14, 16-20, 22-29, 31, 32 N/C No connection. These pins may be connected to RF ground. Performance will not be affected. 2 Vgg2 Optional gate control if AGC is required. Leave Vgg2 open circuited if AGC is not required. 5 RFIN This pad is AC coupled and matched to 50 Ohms from 2.0 - 20.0 GHz 15 Vgg1 Gate control for amplifier. Adjust to achieve Idd= 60 mA. 21 RFOUT This pad is AC coupled and matched to 50 Ohms from 2.0 - 20.0 GHz 30 Vdd Power supply voltage for the amplifier. External bypass capacitors are required Ground Paddle GND Grpund paddle must be connected to RF/DC ground. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC463LP5 v00.0404 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz Evaluation PCB AMPLIFIERS - SMT 8 List of Materials for Evaluation PCB 108341* Item Description J1 - J2 SRI K Connector J3 - J4 2 mm Molex Header C1 - C3 100 pF Capacitor, 0402 Pkg. C4 - C6 1000 pF Capacitor, 0603 Pkg. C7 - C8 4.7 µF Capacitor, Tantalum U1 HMC463LP5 PCB** 107339 Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. ** Circuit Board Material: Rogers 4350 * Reference this number when ordering complete evaluation PCB. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 267