Kexin BCW69 Pnp transistor Datasheet

Transistors
SMD Type
PNP Transistors
BCW69~BCW70
(KCW69~KCW70)
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
■ Features
● NPN complements: BCW71 and BCW72.
1
0.55
● Low voltage (max. 45 V).
+0.1
1.3 -0.1
+0.1
2.4 -0.1
● Low current (max. 100 mA)
0.4
3
2
+0.1
0.95 -0.1
+0.1
1.9 -0.1
+0.1
0.97 -0.1
+0.05
0.1 -0.01
1.Base
0-0.1
+0.1
0.38 -0.1
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Symbol
Rating
Collector - Base Voltage
Parameter
VCBO
-50
Collector - Emitter Voltage
VCEO
-45
Emitter - Base Voltage
Unit
V
VEBO
-5
Collector Current - Continuous
IC
-100
Peak Collector Current
ICM
-200
Peak Base Current
IBM
-200
Collector Power Dissipation
PC
250
mW
Rth(j-a)
500
K/W
Thermal Resistance From Junction to Ambient (Note.1)
Junction Temperature
Storage Temperature range
TJ
150
Tstg
-55 to 150
mA
℃
Note.1: Transistor mounted on an FR4 printed-circuit board.
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1
Transistors
SMD Type
PNP Transistors
BCW69~BCW70
(KCW69~KCW70)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Min
Collector- base breakdown voltage
VCBO
Ic= -100 μA, IE=0
-50
Collector- emitter breakdown voltage
VCEO
Ic= -1 mA, IB=0
-45
Emitter - base breakdown voltage
VEBO
IE= -100μA, IC=0
-5
Collector-base cut-off current
ICBO
Emitter cut-off current
IEBO
Collector-emitter saturation voltage
VCE(sat)
Base - emitter saturation voltage
VBE(sat)
Base - emitter voltage
VBE
DC current gain
BCW69
DC current gain
BCW69
BCW70
VCB= -20 V , IE=0,TJ=100℃
uA
VEB= -5V , IC=0
-100
nA
IC=-10 mA, IB=-0.5mA
-80
IC=-50 mA, IB=-2.5mA(Note.1)
-150
IC=-10 mA, IB=-0.5mA
-720
IC=-50 mA, IB=-2.5mA(Note.1)
VCE= -5V, IC= -2mA
hFE
VCE= -5V, IC= -2mA
Noise figure
NF
Transition frequency
fT
VCE= -5V, IC= -10mA,f=100MHz
Type
BCW69
BCW70
Range
120-260
215-500
Marking
H1*
H2*
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V
nA
VCB= -10V,IE=ie=0, f=1MHz
■ Classification of hfe(2)
Unit
-10
VCE= -5V,IC=-200uA,RS=2KΩ
f=1MHz,B=200Hz
Note.1: Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Max
-100
Cc
Collector capacitance
Typ
VCB= -20 V , IE=0
-300
mV
-810
-600
-750
90
VCE= -5V, IC= -10uA
BCW70
2
Test Conditions
150
120
260
215
500
4.5
pF
10
100
dB
MHz
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