FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB (Typ.)@f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package • Tape and Reel Available DESCRIPTION The FH40LG is a Super High Electron Mobility Transistor TM (SuperHEMT ) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-12GHz frequency range. This device is packaged in a cost effective, low parasitic, hermetically sealed metal-ceramic package for high volume telecommunication, DBS, TVRO, VSAT or other low noise applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Condition Symbol Item Rating Unit Drain-Source Voltage VDS 3.5 V Gate-Source Voltage VGS -3.0 V Total Power Dissipation Ptot 290 mW Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C Limit Typ. Max. Unit Note Note: Mounted on Al2O3 board (30 x 30 x 0.65mm) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 2 volts. 2. The forward and reverse gate currents should not exceed 0.2 and -0.075 mA respectively with gate resistance of 4000Ω. 3. The operating channel temperature (Tch) should not exceed 80°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Symbol Saturated Drain Current IDSS Condition Min. VDS = 2V, VGS = 0V 10 40 85 mA Transconductance gm VDS = 2V, IDS =10mA 45 65 - mS Pinch-off Voltage Vp VDS = 2V, IDS =1mA -0.1 -1.0 -2.0 V IGS = -10µA -3.0 - - V 0.30 0.40 dB 15.5 - dB 220 300 °C/W Gate Source Breakdown Voltage VGSO Noise Figure NF Associated Gain Gas VDS = 2V, IDS = 10mA, f = 4GHz 14.0 Thermal Resistance Rth Channel to Case AVAILABLE CASE STYLES: LG Note: RF parameters for LG devices are measured on a sample basis as follows: 1200 1201 3201 10001 Lot qty. or to to or Edition 1.1 July 1999 less 3200 10000 over Sample qty. 125 200 315 500 Accept/Reject (0,1) (0,1) (1,2) (1,2) 1 - FHC40LG Super Low Noise HEMT POWER DERATING CURVE Total Power Dissipation (mW) 300 250 200 150 100 50 0 0 50 100 150 200 Ambient Temperature (°C) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 50 VGS =0V Drain Current (mA) 40 30 -0.2V 20 -0.4V 10 -0.6V -0.8V -1.0V 0 1 2 3 Drain-Source Voltage (V) 2 4 FHC40LG Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE +j50 +j100 +j25 Γopt 0.5 1.0 1.5 +j10 3.0dB 10 0 +j250 2.0 2.5 25 50 100 250 -j10 -j250 -j25 -j100 -j50 f=4GHz VDS=2V IDS=10mA Γopt=0.87∠57° Rn/50=0.18 NFmin=0.30dB Ga(max) AND |S21| vs. FREQUENCY NOISE PARAMETERS VDS=2V, IDS=10MA 2 4 6 8 10 12 14 16 18 Γopt (MAG) (ANG) 0.86 0.87 0.86 0.81 0.74 0.63 0.49 0.33 0.13 31.0 57.0 83.0 108.0 132.0 156.0 179.0 -158.0 -136.0 20 NFmin (dB) Rn/50 0.28 0.30 0.34 0.39 0.47 0.55 0.67 0.81 1.00 0.19 0.18 0.13 0.09 0.05 0.03 0.04 0.07 0.11 VDS=2V IDS=10mA 15 Gain (dB) Freq. (GHz) Ga(max) 10 |S21| 5 0 4 6 8 1012 18 20 Frequency (GHz) 3 FHC40LG Super Low Noise HEMT S11 S22 +j50 S21 S12 +90° +j100 +j25 4 18GHZ +j10 6 +j250 2 18GHZ 4 2 8 16 14 16 10 50Ω 25 12 100 1GHz 12 10 10 -j10 250 8 180° 1GHz 0.08 0.06 0.04 0.02 SCALE FOR |S12| 2 6 -j250 4 15 2 18GHZ 4 6 8 2 6 8 -j25 4 -j100 MAG S11 ANG 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.980 0.942 0.887 0.838 0.786 0.742 0.705 0.672 0.651 0.633 0.611 0.595 0.588 0.579 0.569 0.555 0.536 0.525 -20.6 -40.7 -59.4 -76.9 -93.2 -108.3 -122.1 -133.7 -143.9 -153.9 -164.1 -174.8 176.0 167.6 159.3 150.5 140.3 129.9 14 8 10 12 14 16 18GHZ -90° -j50 FREQUENCY (GHZ) 12 SCALE FOR |S21| 0 6 10 1GHz 1GHz S-PARAMETERS VDS = 2V, IDS = 10mA S21 S12 MAG ANG MAG ANG 5.620 5.401 5.051 4.685 4.334 3.984 3.654 3.340 3.110 2.954 2.786 2.641 2.518 2.412 2.342 2.290 2.272 2.233 159.7 140.7 122.6 105.8 89.9 74.9 60.6 47.6 35.8 23.7 11.8 0.0 -11.6 -23.0 -34.6 -46.6 -59.4 -72.6 0.017 0.033 0.045 0.054 0.060 0.063 0.063 0.063 0.062 0.061 0.059 0.058 0.057 0.057 0.057 0.058 0.059 0.060 75.8 61.6 49.5 38.5 28.5 20.2 12.9 7.2 3.2 -0.2 -2.9 -5.1 -6.7 -7.9 -10.1 -12.9 -17.0 -22.4 S22 MAG ANG 0.541 0.523 0.501 0.480 0.461 0.448 0.449 0.463 0.481 0.498 0.513 0.535 0.562 0.597 0.634 0.667 0.697 0.727 -17.8 -35.0 -51.2 -66.6 -81.3 -95.4 -108.9 -120.3 -130.1 -138.8 -147.6 -157.0 -165.3 -172.8 -179.7 173.6 166.4 158.8 Download S-Parameters, click here 0° FHC40LG Super Low Noise HEMT Case Style "LG" Metal-Ceramic Hermetic Package 4.78±0.5 1.78±0.15 1.5±0.3 (0.07) (0.059) 1.5±0.3 (0.059) 1.0 (0.039) 1.5±0.3 (0.059) 1 3 4.78±0.5 1.78±0.15 1.5±0.3 (0.07) (0.059) 2 4 0.5 (0.02) 1.3 Max (0.051) 1. 2. 3. 4. Gate Source Drain Source 0.1 (0.004) Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 TM SuperHEMT is a trademark of Fujitsu Limited. 5