Eudyna FHC40LG Super low noise hemt Datasheet

FHC40LG
Super Low Noise HEMT
FEATURES
• Low Noise Figure: 0.3dB (Typ.)@f=4GHz
• High Associated Gain: 15.5dB (Typ.)@f=4GHz
• Lg ≤ 0.15µm, Wg = 280µm
• Gold Gate Metallization for High Reliability
• Cost Effective Ceramic Microstrip (SMT) Package
• Tape and Reel Available
DESCRIPTION
The FH40LG is a Super High Electron Mobility Transistor
TM
(SuperHEMT ) intended for general purpose, ultra-low noise and
high gain amplifiers in the 2-12GHz frequency range. This device is
packaged in a cost effective, low parasitic, hermetically sealed
metal-ceramic package for high volume telecommunication, DBS,
TVRO, VSAT or other low noise applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Condition
Symbol
Item
Rating
Unit
Drain-Source Voltage
VDS
3.5
V
Gate-Source Voltage
VGS
-3.0
V
Total Power Dissipation
Ptot
290
mW
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C
Limit
Typ. Max.
Unit
Note
Note: Mounted on Al2O3 board (30 x 30 x 0.65mm)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 2 volts.
2. The forward and reverse gate currents should not exceed 0.2 and -0.075 mA respectively with
gate resistance of 4000Ω.
3. The operating channel temperature (Tch) should not exceed 80°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Saturated Drain Current
IDSS
Condition
Min.
VDS = 2V, VGS = 0V
10
40
85
mA
Transconductance
gm
VDS = 2V, IDS =10mA
45
65
-
mS
Pinch-off Voltage
Vp
VDS = 2V, IDS =1mA
-0.1
-1.0
-2.0
V
IGS = -10µA
-3.0
-
-
V
0.30
0.40
dB
15.5
-
dB
220
300
°C/W
Gate Source Breakdown Voltage
VGSO
Noise Figure
NF
Associated Gain
Gas
VDS = 2V, IDS = 10mA,
f = 4GHz
14.0
Thermal Resistance
Rth
Channel to Case
AVAILABLE CASE STYLES: LG
Note: RF parameters for LG devices are measured on a sample basis as follows:
1200
1201
3201
10001
Lot qty.
or
to
to
or
Edition 1.1
July 1999
less
3200
10000
over
Sample qty.
125
200
315
500
Accept/Reject
(0,1)
(0,1)
(1,2)
(1,2)
1
-
FHC40LG
Super Low Noise HEMT
POWER DERATING CURVE
Total Power Dissipation (mW)
300
250
200
150
100
50
0
0
50
100
150
200
Ambient Temperature (°C)
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
50
VGS =0V
Drain Current (mA)
40
30
-0.2V
20
-0.4V
10
-0.6V
-0.8V
-1.0V
0
1
2
3
Drain-Source Voltage (V)
2
4
FHC40LG
Super Low Noise HEMT
TYPICAL NOISE FIGURE CIRCLE
+j50
+j100
+j25
Γopt
0.5
1.0
1.5
+j10
3.0dB
10
0
+j250
2.0
2.5
25
50
100
250
-j10
-j250
-j25
-j100
-j50
f=4GHz
VDS=2V
IDS=10mA
Γopt=0.87∠57°
Rn/50=0.18
NFmin=0.30dB
Ga(max) AND |S21| vs. FREQUENCY
NOISE PARAMETERS
VDS=2V, IDS=10MA
2
4
6
8
10
12
14
16
18
Γopt
(MAG)
(ANG)
0.86
0.87
0.86
0.81
0.74
0.63
0.49
0.33
0.13
31.0
57.0
83.0
108.0
132.0
156.0
179.0
-158.0
-136.0
20
NFmin
(dB)
Rn/50
0.28
0.30
0.34
0.39
0.47
0.55
0.67
0.81
1.00
0.19
0.18
0.13
0.09
0.05
0.03
0.04
0.07
0.11
VDS=2V
IDS=10mA
15
Gain (dB)
Freq.
(GHz)
Ga(max)
10
|S21|
5
0
4
6
8 1012 18 20
Frequency (GHz)
3
FHC40LG
Super Low Noise HEMT
S11
S22
+j50
S21
S12
+90°
+j100
+j25
4
18GHZ
+j10
6
+j250
2
18GHZ
4
2
8
16
14
16
10
50Ω
25
12
100
1GHz
12
10
10
-j10
250
8
180°
1GHz
0.08 0.06 0.04 0.02
SCALE FOR |S12|
2
6
-j250
4
15
2
18GHZ
4
6
8
2
6
8
-j25
4
-j100
MAG
S11
ANG
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.980
0.942
0.887
0.838
0.786
0.742
0.705
0.672
0.651
0.633
0.611
0.595
0.588
0.579
0.569
0.555
0.536
0.525
-20.6
-40.7
-59.4
-76.9
-93.2
-108.3
-122.1
-133.7
-143.9
-153.9
-164.1
-174.8
176.0
167.6
159.3
150.5
140.3
129.9
14
8
10
12
14
16
18GHZ
-90°
-j50
FREQUENCY
(GHZ)
12
SCALE FOR |S21|
0
6
10
1GHz
1GHz
S-PARAMETERS
VDS = 2V, IDS = 10mA
S21
S12
MAG
ANG
MAG
ANG
5.620
5.401
5.051
4.685
4.334
3.984
3.654
3.340
3.110
2.954
2.786
2.641
2.518
2.412
2.342
2.290
2.272
2.233
159.7
140.7
122.6
105.8
89.9
74.9
60.6
47.6
35.8
23.7
11.8
0.0
-11.6
-23.0
-34.6
-46.6
-59.4
-72.6
0.017
0.033
0.045
0.054
0.060
0.063
0.063
0.063
0.062
0.061
0.059
0.058
0.057
0.057
0.057
0.058
0.059
0.060
75.8
61.6
49.5
38.5
28.5
20.2
12.9
7.2
3.2
-0.2
-2.9
-5.1
-6.7
-7.9
-10.1
-12.9
-17.0
-22.4
S22
MAG
ANG
0.541
0.523
0.501
0.480
0.461
0.448
0.449
0.463
0.481
0.498
0.513
0.535
0.562
0.597
0.634
0.667
0.697
0.727
-17.8
-35.0
-51.2
-66.6
-81.3
-95.4
-108.9
-120.3
-130.1
-138.8
-147.6
-157.0
-165.3
-172.8
-179.7
173.6
166.4
158.8
Download S-Parameters, click here
0°
FHC40LG
Super Low Noise HEMT
Case Style "LG"
Metal-Ceramic Hermetic Package
4.78±0.5
1.78±0.15 1.5±0.3
(0.07)
(0.059)
1.5±0.3
(0.059)
1.0
(0.039)
1.5±0.3
(0.059)
1
3
4.78±0.5
1.78±0.15 1.5±0.3
(0.07)
(0.059)
2
4
0.5
(0.02)
1.3 Max
(0.051)
1.
2.
3.
4.
Gate
Source
Drain
Source
0.1
(0.004)
Unit: mm(inches)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
TM
SuperHEMT
is a trademark of Fujitsu Limited.
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