bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k × 8 NONVOLATILE SRAM (5 V, 3.3 V) FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles Conventional SRAM Operation, Including Unlimited Write Cycles Internal Isolation of Battery before Power Application 5-V or 3.3-V Operation Industry Standard 32-Pin DIP Pinout The CMOS bq4013/Y/LY is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM. The control circuitry constantly monitors the single supply for an out-of-tolerance condition. When VCC falls out of tolerance, the SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is switched on to sustain the memory until after VCC returns valid. The bq4013/Y/LY uses extremely low standby current CMOS SRAMs, coupled with small lithium coin cells to provide nonvolatility without long write-cycle times and the write-cycle limitations associated with EEPROM. The bq4013/Y/LY requires no external circuitry and is compatible with the industry-standard 1-Mb SRAM pinout. PIN CONNECTIONS 32−Pin DIP Module (TOP VIEW) NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS 1 32 2 31 3 30 4 29 5 28 6 27 7 26 8 25 9 24 10 23 11 22 12 21 13 20 14 19 15 18 16 17 VCC A15 NC WE A13 A8 A9 A11 OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 1999–2007, Texas Instruments Incorporated bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 DEVICE INFORMATION Table 1. TERMINAL FUNCTIONS TERMINAL NAME NUMBER I/O DESCRIPTION A0 12 I A1 11 I A2 10 I A3 9 I A4 8 I A5 7 I A6 6 I A7 5 I A8 27 I A9 26 I A10 23 I A11 25 I A12 4 I A13 28 I A14 3 I A15 31 I A16 2 I CE 22 I DQ0 13 I/O DQ1 14 I/O DQ2 15 I/O DQ3 17 I/O DQ4 18 I/O DQ5 19 I/O DQ6 20 I/O DQ7 21 I/O 1 - 30 - OE 24 I Output enable input VCC 32 I Supply voltage input VSS 16 - Ground WE 29 I Write enable input NC Address inputs Chip-enable input Data input/output No connect FUNCTIONAL DESCRIPTION When power is valid, the bq4013/Y/LY operates as a standard CMOS SRAM. During power-down and power-up cycles, the bq4013/Y/LY acts as a nonvolatile memory, automatically protecting and preserving the memory contents. Power-down/power-up control circuitry constantly monitors the VCC supply for a power-fail-detect threshold VPFD. The bq4013 monitors for VPFD = 4.62 V typical for use in 5-V systems with 5% supply tolerance. The bq4013Y monitors for VPFD = 4.37 V typical for use in 5-V systems with 10% supply tolerance. The bq4013LY monitors for VPFD = 2.90 V (typ) for use in 3.3-V systems. 2 Submit Documentation Feedback bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 When VCC falls below the VPFD threshold, the SRAM automatically write-protects the data. All outputs become high impedance, and all inputs are treated as don't care. If a valid access is in process at the time of power-fail detection, the memory cycle continues to completion. If the memory cycle fails to terminate within time tWPT, write-protection takes place. As VCC falls past VPFD and approaches VSO, the control circuitry switches to the internal lithium backup supply, which provides data retention until valid VCC is applied. When VCC returns to a level above the internal backup cell voltage, the supply is switched back to VCC. After VCC ramps above the VPFD threshold, write-protection continues for a time tCER (120 ms maximum in 5-V system, 85 ms maximum in 3.3-V system) to allow for processor stabilization. Normal memory operation may resume after this time. The internal coin cells used by the bq4013/Y/LY have an extremely long shelf life and provide data retention for more than 10 years in the absence of system power. As shipped from TI, the integral lithium cells of the MT-type module are electrically isolated from the memory. (Self-discharge in this condition is approximately 0.5% per year.) Following the first application of VCC, this isolation is broken, and the lithium backup provides data retention on subsequent power-downs. BLOCK DIAGRAM DIP MODULE bq4013/Y/LY MA PACKAGE OE A0 - A16 128 k × 8 SRAM Block WE Power CE DQ0 - DQ7 CECON Power-Fail Control + VCC Lithium Cell UDG-06075 TRUTH TABLE MODE CE WE OE I/O OPERATION POWER Not selected H X X High-Z Standby Output disable L H H High-Z Active Read L H L DOUT Active Write L L X DIN Active Submit Documentation Feedback 3 bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 ORDERING INFORMATION For the most current package and ordering information, see the Package Option Addendum at the end of the datasheet, or see the TI website at www.ti.com. SELECTION GUIDE MAXIMUM ACCESS TIME (ns) DEVICE NUMBER bq4013MA-85 85 bq4013MA-120 120 bq4013YMA-70 70 bq4013YMA-85 85 bq4013YMA-120 120 bq4013YMA-70N 70 bq4013YMA-85N 85 bq4013LYMA-70N 70 NEGATIVE SUPPLY TOLERANCE (%) NOMINAL INPUT VOLTAGE VCC (V) TEMPERATURE (°C) -5 0 to 70 5 -10 -40 to 85 3.3 PART NUMBERING PRODUCT LINE bq40 MEMORY DENSITY INPUT VOLTAGE (V) NEGATIVE SUPPLY TOLERANCE PACKAGE SPEED (ns) 13 L Y MA 70 N 10 = 8 k × 8 Blank = 5 Blank = 5% MA = DIP 70 Blank = Commercial 11 = 32 k × 8 L= 3.3 Y = 10% 85 ( 0 to 70) 13 = 128 k × 8 100 14 = 256 k × 8 120 N = Industrial 15 = 512 k × 8 150 (-40 to 85) 16 = 1024 k × 8 200 17 = 2048 k × 8 4 TEMPERATURE (°C) Submit Documentation Feedback bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 ABSOLUTE MAXIMUM RATINGS (1) PARAMETER VCC CONDITION VALUE bq4013Y –0.3 to 7.0 bq4013 –0.3 to 7.0 bq4013LY –0.3 to 6.0 bq4013Y –0.3 to 7.0 DC voltage applied on VCC relative to VSS DC voltage applied on any pin excluding VVT≤ VCC +0.3 V VCC relative to VSS VT bq4013 bq4013LY TOPR Operating temperature TSTG Storage temperature TBIAS Temperature under bias TSOLDER Soldering temperature (1) UNIT V –0.3 to 7.0 V –0.3 to (VCC + 0.3) Commercial 0 to 70 Industrial –40 to 85 Commercial –10 to 70 Industrial –40 to 85 Commercial –10 to 70 Industrial –40 to 85 For 10 seconds °C 260 Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation should be limited to the Recommended DC Operating Conditions detailed in this data sheet. Exposure to conditions beyond the operational limits for extended periods of time may affect device reliability. RECOMMENDED OPERATING CONDITIONS (TA = TOPR) MIN TYP (1) MAX bq4013Y 4.50 5.00 5.50 bq4013 4.75 5.00 5.50 bq4013LY 3.00 3.30 3.60 0 0 0 VCC Supply voltage VSS Supply voltage VIL Low-level input voltage –0.3 0.8 VIH High-level Input voltage 2.2 VCC + 0.3 (1) UNIT V Typical values indicate operation at TA = 25°C. DC ELECTRICAL CHARACTERISTICS TA = TOPR, VCC(min)≤ VCC≤ VCC(max) PARAMETER TEST CONDITIONS MIN TYP (1) MAX ILI Input leakage current VIN = VSS to VCC ±1 ILO Output leakage current CE = VIH or OE = VIH or WE = VIL ±1 VOH Output high voltage IOH = –1.0 mA VOL Output low voltage IOL = 2.1 mA ISB1 Standby supply current CE = VIH ISB2 Standby supply current CE≥ VCC– 0.2 V, 0V ≤ VIN≤ 0.2 V, or VIN≥ VCC– 0.2 ICC Operating supply current 2.4 0.4 bq4013LY VPFD Power-fail-detect voltage VSO (1) Supply switch-over voltage V 2 µA 0.1 1 mA 50 Minimum cycle, duty = 100%, CE = VIL, II/O = 0 mA mA 50 bq4013 4.55 4.62 4.75 bq4013Y 4.30 4.37 4.50 bq4013LY 2.85 2.90 2.95 bq4013 µA 1 bq4013 bq4013Y UNIT 3 bq4013Y 3 bq4013LY 2.9 V Typical values indicate operation at TA = 25°C, VCC = 5.0 V or VCC = 3.3 V. Submit Documentation Feedback 5 bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 CAPACITANCE (TA = 25°C, f = 1 MHz, VCC = 5.0 V or VCC = 3.3 V) PARAMETER (1) TEST CONDITIONS CI/O Input/output capacitance Output voltage = 0 V CIN Input capacitance Input voltage = 0 V (1) MIN TYP MAX 8 10 Ensured by design. Not production tested. AC TEST CONDITIONS TEST CONDITIONS PARAMETER Input pulse levels Input rise and fall times Input and output timing reference levels 5V 3.3 V 0 V to 3.0 V 0 V to VCC 5 ns 5 ns 1.5 V (unless otherwise specified) 50 % See Figure 1 and Figure 2 See Figure 3 and Figure 4 Output load (including scope and jig) +5V +5V 1.9 kW DOUT 1.9 kW DOUT 1 kW 100 pF 1 kW Figure 1. 5-V Output Load A Figure 2. 5-V Output Load B + 3.3 V + 3.3 V 1.2 kW DOUT 1.2 kW DOUT 1.4 kW 30 pF Figure 3. 3.3-V Output Load A 6 5 pF Submit Documentation Feedback 1.4 kW 5 pF Figure 4. 3.3-V Output Load B UNIT pF bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 Table 2. READ CYCLE (TA = TOPR, VCC(min)≤ VCC≤ VCC(max)) PARAMETER -70 TEST CONDITIONS MIN -85 MAX 70 MIN -120 MAX MIN tRC Read cycle time tAA Address access time tACE Chip enable access time tOE Output enable to output valid tCLZ Chip enable to output in low Z 5 5 5 tOLZ Output enable to output in low Z 0 0 0 tCHZ Chip disable to output in high Z tOHZ Output disable to output in high Z tOH Output hold from address change Output load A Output load B Output load A 85 MAX 120 70 85 120 70 85 120 35 45 60 ns 0 25 0 35 0 45 0 25 0 25 0 35 10 UNIT 10 10 tRC Address tAA tOH DOUT Previous Data Valid (1) WE is held high for a read cycle. (2) Device is continuously selected: CE = OE = VIL. Data Valid Figure 5. Read Cycle No. 1 (Address Access) (1)(2) tRC CE tACE tCHZ tCLZ DOUT High−Z High−Z (1) WE is held high for a read cycle. (2) Device is continuously selected: CE = OE = VIL. (3) Address is valid prior to or coincident with CE transition low. Figure 6. Read Cycle No. 2 (CE Access) (1)(2)(3) Submit Documentation Feedback 7 bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 tRC Address tAA OE tOHZ tOE tOLZ DOUT Data Valid High−Z High−Z (1) WE is held high for a read cycle. (2) Device is continuously selected: CE = VIL. Figure 7. Read Cycle No. 3 (OE Access) 8 Submit Documentation Feedback (1)(2) bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 Table 3. WRITE CYCLE (TA = TOPR, VCC(min)≤ VCC≤ VCC(max)) PARAMETER -70 TEST CONDITIONS MIN -85 MAX MIN -120 MAX MIN tWC Write cycle time 70 85 120 tCW Chip enable to end of write See (1) 65 75 100 tAW Address valid to end of write See (1) 65 75 100 tAS Address setup time Measured from address valid to beginning of write. (2) 0 0 0 tWP Write pulse width Measured from beginning of write to end of write. (1) 55 65 85 tWR1 Write recovery time (write cycle 1) Measured from WE going high to end of write cycle. (3) 5 5 5 tWR2 Write recovery time (write cycle 2) Measured from CE going high to end of write cycle.(3) 15 15 15 tDW Data valid to end of write Measured to first low-to- high transition of either CE or WE. 30 35 45 tDH1 Data hold time (write cycle 1) Measured from WE going high to end of write cycle. (4) 0 0 0 tDH2 Data hold time (write cycle 2) Measured from CE going high to end of write cycle.(4) 0 0 0 tWZ Write enbled to output in high Z I/O pins are in output state. (5) 0 tOW Output active from end of write (5) 5 (1) (2) (3) (4) (5) I/O pins are in output state. 25 0 5 30 0 MAX UNIT ns 40 5 A write ends at the earlier transition of CE going high and WE going high. A write occurs during the overlap of a low CE and a low WE. A write begins at the later transition of CE going low and WE going low. Either tWR1 or tWR2 must be met. Either tDH1 or tDH2 must be met. If CE goes low simultaneously with WE going low or after WE going low, the outputs remain in high-impedance state. tWC Address tAW tWR1 tCW CE tAS tWP WE tDW tDH1 Data−In Valid DIN tWZ DOUT tOW Data Undefined (1) High−Z (1) CE or WE must be high during address transition. (2) Because I/O may be active (OE low) during this period, data input signals of opposite polarity to the outputs must not be applied. (3) If OE is high, the I/O pins remain in a state of high impedance. Figure 8. Write Cycle No. 1 (WE-Controlled) Submit Documentation Feedback (1)(2)(3) 9 bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 tWC Address tAW tAS tWR2 tCW CE tWP WE tDW DIN tDH2 Data−in Valid tWZ DOUT Data Undefined (1) High−Z (1) CE or WE must be high during address transition. (2) Because I/O may be active (OE low) during this period, data input signals of opposite polarity to the outputs must not be applied. (3) If OE is high, the I/O pins remain in a state of high impedance. (4) Either tWR1 or tWR2 must be met. (5) Either tDH1 or tDH2 must be met. Figure 9. Write Cycle No. 2 (CE-Controlled) 10 Submit Documentation Feedback (1)(2)(3)(4)(5) bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 Table 4. 5-V POWER-DOWN/POWER-UP (TA = TOPR) PARAMETER tPF VCC slew, 4.75 to 4.25 V tFS VCC slew, 4.25 to VSO tPU VCC slew, VSO to VPFD (max.) tCER tWPT (1) (2) µs µs 0 µs 40 TA = Write-protect time Delay after VCC slews down past VPFD before SRAM is writeprotected. UNIT 10 25°C (2) Data-retention time in absence of VCC MAX 300 Time during which SRAM is write-protected after VCC passes VPFD on power-up. Chip enable recovery time tDR MIN TYP (1) TEST CONDITIONS 80 120 10 40 ms years 100 150 µs Typical values indicate operation at TA = 25°C, VCC = 5V. Batteries are disconnected from circuit until after VCC is applied for the first time. tDR is the accumulated time in absence of power beginning when power is first applied to the device. tPF VCC 4.75 V VPFD VPFD 4.25 V VSO VSO tFS tDR tPU tCER tWPT CE Figure 10. 5-V Power-Down/Power-Up Timing Submit Documentation Feedback 11 bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 Table 5. 3.3-V POWER-DOWN/POWER-UP (TA = TOPR) PARAMETER MIN TYP (1) TEST CONDITIONS tF VCC slew, 3 V to 0 V 300 tR VCC slew, VSO to VPFD (max) 100 tCER Chip enable recovery time Time during which SRAM is write-protected after VCC passes VPFD on power-up. 10 tDR Data-retention time in absence of VCC TA = 25°C (2) 10 (1) (2) MAX µs 85 ms years Typical values indicate operation at TA = 25°C, VCC = 3.3 V. Batteries are disconnected from circuit until after VCC is applied for the first time. Data retention time (tDR) is the accumulated time in absence of power beginning when power is first applied to the device. VCC 3.0 V VPFD(max) VPFD VSO VSO tR tDR tCER tF CE Figure 11. 3.3-V Power-Down/Power-Up Timing CAUTION: Negative undershoots below the absolute maximum rating of -0.3 V in battery-backup mode may affect data integrity. 12 UNIT Submit Documentation Feedback PACKAGE OPTION ADDENDUM www.ti.com 9-Oct-2007 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty BQ4013LYMA-70N ACTIVE DIP MOD ULE MA 32 1 Pb-Free (RoHS) CU SN N / A for Pkg Type BQ4013MA-120 ACTIVE DIP MOD ULE MA 32 1 Pb-Free (RoHS) CU SN N / A for Pkg Type BQ4013MA-85 ACTIVE DIP MOD ULE MA 32 1 Pb-Free (RoHS) CU SN N / A for Pkg Type BQ4013YMA-120 ACTIVE DIP MOD ULE MA 32 1 Pb-Free (RoHS) CU SN N / A for Pkg Type BQ4013YMA-70 ACTIVE DIP MOD ULE MA 32 1 Pb-Free (RoHS) CU SN N / A for Pkg Type BQ4013YMA-70N ACTIVE DIP MOD ULE MA 32 1 Pb-Free (RoHS) CU SN N / A for Pkg Type BQ4013YMA-85 ACTIVE DIP MOD ULE MA 32 1 Pb-Free (RoHS) CU SN N / A for Pkg Type BQ4013YMA-85N ACTIVE DIP MOD ULE MA 32 1 Pb-Free (RoHS) CU SN N / A for Pkg Type Lead/Ball Finish MSL Peak Temp (3) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1 MECHANICAL DATA MPDI061 – MAY 2001 MA (R-PDIP-T**) PLASTIC DUAL-IN-LINE 28 PINS SHOWN Millimeters Inches D Dimension Min. Max. Min. Max. A 0.365 0.375 9.27 A1 0.015 – 0.38 9.53 – B 0.017 0.023 0.43 0.58 C 0.008 0.013 0.20 0.33 D/12 PIN 0.710 0.740 18.03 18.80 D/28 PIN 1.470 1.500 37.34 38.10 D/32 PIN 1.670 1.700 42.42 43.18 D/40 PIN 2.070 2.100 52.58 53.34 E 0.710 0.740 18.03 18.80 e G 0.590 0.630 14.99 16.00 0.090 0.110 2.29 2.79 L 0.120 0.150 3.05 3.81 S/12 PIN 0.105 0.130 2.67 3.30 S 0.075 0.110 1.91 2.79 E A L A1 C B e S G 4201975/A 03/01 NOTES: A. All linear dimensions are in inches (mm). B. This drawing is subject to change without notice. • POST OFFICE BOX 655303 DALLAS, TEXAS 75265 POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443 • 1 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. 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