16Mx72 bits Registered DDR SDRAM DIMM HYMD116G725B(L)8-M/K/H/L DESCRIPTION Hynix HYMD116G725B(L)8-M/K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 16Mx72 high-speed memory arrays. Hynix HYMD116G725B(L)8-M/ K/H/L series consists of nine 16Mx8 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy substrate. Hynix HYMD116G725B(L)8-M/K/H/L series provide a high performance 8-byte interface in 5.25" width form factor of industry standard. It is suitable for easy interchange and addition. Hynix HYMD116G725B(L)8-M/K/H/L series is designed for high speed of up to 133MHz and offers fully synchronous operations referenced to both rising and falling edges of differential clock inputs. While all addresses and control inputs are latched on the rising edges of the clock, Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with SSTL_2. High speed frequencies, programmable latencies and burst lengths allow variety of device operation in high performance memory system. Hynix HYMD116G725B(L)8-M/K/H/L series incorporates SPD(serial presence detect). Serial presence detect function is implemented via a serial 2,048-bit EEPROM. The first 128 bytes of serial PD data are programmed by Hynix to identify DIMM type, capacity and other the information of DIMM and the last 128 bytes are available to the customer. FEATURES • 128MB (16M x 72) Registered DDR DIMM based on 16Mx8 DDR SDRAM • Fully differential clock operations (CK & /CK) with 100MHz/125MHz/133MHz • JEDEC Standard 184-pin dual in-line memory module (DIMM) • Programmable CAS Latency 2 / 2.5 supported • • Error Check Correction (ECC) Capability Programmable Burst Length 2 / 4 / 8 with both sequential and interleave mode • Registered inputs with one-clock delay • tRAS Lock-out function supported • Phase-lock loop (PLL) clock driver to reduce loading • Internal four bank operations with single pulsed RAS • 2.5V +/- 0.2V VDD and VDDQ Power supply • Auto refresh and self refresh supported • All inputs and outputs are compatible with SSTL_2 interface • 4096 refresh cycles / 64ms ORDERING INFORMATION Part No. Power Supply HYMD116G725B(L)8-H HYMD116G725B(L)8-L Interface Form Factor SSTL_2 184pin Registered DIMM 5.25 x 1.7 x 0.15 inch 133MHz (*DDR266:2-2-2) HYMD116G725B(L)8-M HYMD116G725B(L)8-K Clock Frequency VDD=2.5V VDDQ=2.5V 133MHz (*DDR266A) 133MHz (*DDR266B) 125MHz (*DDR200) * JEDEC Defined Specifications compliant This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.3/May. 02 1 HYMD116G725B(L)8-M/K/H/L PIN DESCRIPTION Pin Pin Description Pin Pin Description CK0, /CK1 Differential Clock Inputs VDDQ DQs Power Supply /CS0 Chip Select Input VSS Ground CKE0 Clock Enable Input VREF Reference Power Supply /RAS, /CAS, /WE Commend Sets Inputs VDDSPD Power Supply for SPD A0 ~ A11 Address SA0~SA2 E2PROM Address Inputs BA0, BA1 Bank Address SCL E2PROM Clock DQ0~DQ63 Data Inputs/Outputs SDA E2PROM Data I/O CB0~CB7 Data Strobe Inputs/Outputs WP Write Protect Flag DQS0~DQS8 Data Strobe Inputs/Outputs VDDID VDD Identification Flag DM0~8 Data-in Mask DU Do not Use VDD Power Supply NC No Connection /RESET Reset Enable FETEN FET Enable PIN ASSIGNMENT Pin Name Pin Name Pin Name Pin Name Pin Name Pin 1 VREF 32 A5 62 VDDQ 93 VSS 124 VSS 154 Name /RAS 2 DQ0 33 DQ24 63 /WE 94 DQ4 125 A6 155 DQ45 VDDQ 3 VSS 34 VSS 64 DQ41 95 DQ5 126 DQ28 156 4 DQ1 35 DQ25 65 /CAS 96 VDDQ 127 DQ29 157 /CS0 5 DQS0 36 DQS3 66 VSS 97 DM0 128 VDDQ 158 /CS1* DM5 6 DQ2 37 A4 67 DQS5 98 DQ6 129 DM3 159 7 VDD 38 VDD 68 DQ42 99 DQ7 130 A3 160 VSS 8 DQ3 39 DQ26 69 DQ43 100 VSS 131 DQ30 161 DQ46 DQ47 9 NC 40 DQ27 70 VDD 101 NC 132 VSS 162 10 /RESET 41 A2 71 NC 102 NC 133 DQ31 163 NC 11 VSS 42 Vss 72 DQ48 103 A13* 134 CB4 164 VDDQ 12 DQ8 43 A1 73 DQ49 104 VDDQ 135 CB5 165 DQ52 13 DQ9 44 CB0 74 VSS 105 DQ12 136 VDDQ 166 DQ53 NC, FETEN* 14 DQS1 45 CB1 75 DU 106 DQ13 137 CK0 167 15 VDDQ 46 VDD 76 DU 107 DM1 138 /CK0 168 VDD 16 DU 47 DQS8 77 VDDQ 108 VDD 139 VSS 169 DM6 17 DU 48 A0 78 DQS6 109 DQ14 140 DM8 170 DQ54 18 VSS 49 CB2 79 DQ50 110 DQ15 141 A10 171 DQ55 VDDQ 19 DQ10 50 VSS 80 DQ51 111 CKE1* 142 CB6 172 20 DQ11 51 CB3 81 VSS 112 VDDQ 143 VDDQ 173 NC 21 CKE0 52 BA1 82 VDDID 113 BA2* 144 CB7 174 DQ60 22 VDDQ 83 DQ56 114 DQ20 175 DQ61 23 DQ16 53 DQ32 84 DQ57 115 A12* 145 VSS 176 VSS 24 DQ17 54 VDDQ 85 VDD 116 VSS 146 DQ36 177 DM7 25 DQS2 55 DQ33 86 DQS7 117 DQ21 147 DQ37 178 DQ62 26 VSS 56 DQS4 87 DQ58 118 A11 148 VDD 179 DQ63 27 A9 57 DQ34 88 DQ59 119 DM2 149 DM4 180 VDDQ 28 DQ18 58 VSS 89 VSS 120 VDD 150 DQ38 181 SA0 29 A7 59 BA0 90 WP 121 DQ22 151 DQ39 182 SA1 30 VDDQ 60 DQ35 91 SDA 122 A8 152 VSS 183 SA2 31 DQ19 61 DQ40 92 SCL 123 DQ23 153 DQ44 184 VDDSPD Key key * These are not used on this module but may be used for other module in 184pin DIMM family Rev. 0.3/May. 02 2 HYMD116G725B(L)8-M/K/H/L FUNCTIONAL BLOCK DIAGRAM /RCS0 DQS0 DM0 DQS4 DM4 DM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQ 0 DQ 1 DQ 2 DQ 3 DQ 4 DQ 5 DQ 6 DQ 7 /CS DQ S D0 DQS1 DM1 DQ 32 DQ 33 DQ 34 DQ 35 DQ 36 DQ 37 DQ 38 DQ 39 DM I/O I/O I/O I/O I/O I/O I/O I/O 0 1 2 3 4 5 6 7 DQ 40 DQ 41 DQ 42 DQ 43 DQ 44 DQ 45 DQ 46 DQ 47 DM I/O I/O I/O I/O I/O I/O I/O I/O 0 1 2 3 4 5 6 7 DQ 48 DQ 49 DQ 50 DQ 51 DQ 52 DQ 53 DQ 54 DQ 55 DM I/O I/O I/O I/O I/O I/O I/O I/O 0 1 2 3 4 5 6 7 DQ 56 DQ 57 DQ 58 DQ 59 DQ 60 DQ 61 DQ 62 DQ 63 DM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DM I/O I/O I/O I/O I/O I/O I/O I/O /CS 0 1 2 3 4 5 6 7 DQ S D1 DQS2 DM2 /CS DM I/O I/O I/O I/O I/O I/O I/O I/O /CS 0 1 2 3 4 5 6 7 DQ S D2 DQS3 DM3 D5 /CS DQ S D6 DQS7 DM7 DQ 24 DQ 25 DQ 26 DQ 27 DQ 28 DQ 29 DQ 30 DQ 31 DM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 CB0 CB1 CB2 CB3 CB4 CB5 CB6 CB7 DM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 /CS DQ S D3 DQS8 DM8 /CS DQ S D7 Serial PD /CS DQ S SCL WP D8 VDDSPD VDDQ VDD VREF VSS R E G /RCS0 -->/S0 : SDRAM s D0-D8 RBA0-RBA1 -->BA0-BA1 : SDRAM s D0 - D8 RA0 -R A11 -->A0 - A11 : SDRAM s D0 - D8 /RRAS --> /RAS : SDRAM s D0 - D8 /RCAS --> /CAS : SDRAM s D0 - D8 RCKE0 --> CKE : SDRAM s D0 - D8 /RW E --> /W E : SDRAM s D0 - D8 /RESET /PCK CK0, /CK0 --------- PLL* * W ire per clock loading table/wiring diagram s Rev. 0.3/May. 02 DQ S DQS6 DM6 DQ 16 DQ 17 DQ 18 DQ 19 DQ 20 DQ 21 DQ 22 DQ 23 PCK D4 DQS5 DM5 DQ 8 DQ 9 DQ 10 DQ 11 DQ 12 DQ 13 DQ 14 DQ 15 /CS0 BA0-BA1 A0-A11 /RAS /CAS CKE0 /W E DQ S CS A0 A1 A2 SA0 SA1 SA2 . . = . = = . = .... . .. SDA SPD D0 - D8 D0 - D8 D0 - D8 D0 - D8 VDDID Strap:see Note 4 Notes: 1. DQ -to-I/O wiring m ay be changed within a byte 2. DQ /DQ S/DM /CKE/CS relationships must be m aintained as shown. 3. DQ /DQ S resistors should be 22 O hm s. 4. VDDID strap connections(for m em ory device VDD, VDDQ ); Strap out :(open) : VDD=VDDQ Strap In (Vss) : VDD=VDDQ 5. SDRAM placem ent alternates btw the back and front sides for the DIM M 6. Address and control resistors should be 22 O hm s 3 HYMD116G725B(L)8-M/K/H/L ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Unit Ambient Temperature TA 0 ~ 70 o C Storage Temperature TSTG -55 ~ 125 o C Voltage on Any Pin relative to VSS VIN, VOUT -0.5 ~ 3.6 V Voltage on VDD relative to VSS VDD -0.5 ~ 3.6 V Voltage on VDDQ relative to VSS VDDQ -0.5 ~ 3.6 V Output Short Circuit Current IOS 50 mA Power Dissipation PD 9 W Soldering Temperature / Time TSOLDER 260 / 10 oC / Sec Note : Operation at above absolute maximum rating can adversely affect device reliability DC OPERATING CONDITIONS (TA=0 to 70 oC, Voltage referenced to VSS=0V) Parameter Symbol Min Typ. Max Unit Power Supply Voltage VDD 2.3 2.5 2.7 V Power Supply Voltage VDDQ 2.3 2.5 2.7 V Input High Voltage VIH VREF + 0.15 - VDDQ + 0.3 V Input Low Voltage VIL -0.3 - VREF - 0.15 V Termination Voltage VTT VREF - 0.04 VREF VREF + 0.04 V Reference Voltage VREF 0.49*VDDQ 0.5*VDDQ 0.51*VDDQ V Note 1 2 3 Note : 1. VDDQ must not exceed the level of VDD. 2. VIL (min) is acceptable -1.5V AC pulse width with < 5ns of duration. 3. The value of VREF is approximately equal to 0.5VDDQ. AC OPERATING CONDITIONS (TA=0 to 70 oC, Voltage referenced to VSS=0V) Parameter Symbol Min Input High (Logic 1) Voltage, DQ, DQS and DM signals VIH(AC) VREF + 0.31 Input Low (Logic 0) Voltage, DQ, DQS and DM signals VIL(AC) Input Differential Voltage, CK and /CK inputs VID(AC) Input Crossing Point Voltage, CK and /CK inputs VIX(AC) Max Unit Note V VREF - 0.31 V 0.7 VDDQ + 0.6 V 1 0.5*VDDQ-0.2 0.5*VDDQ+0.2 V 2 Note : 1. VID is the magnitude of the difference between the input level on CK and the input on /CK. 2. The value of VIX is expected to equal 0.5*V DDQ of the transmitting device and must track variations in the DC level of the same. Rev. 0.3/May. 02 4 HYMD116G725B(L)8-M/K/H/L AC OPERATING TEST CONDITIONS (TA=0 to 70 oC, Voltage referenced to VSS=0V) Parameter Value Unit Reference Voltage VDDQ x 0.5 V Termination Voltage VDDQ x 0.5 V AC Input High Level Voltage (VIH, min) VREF + 0.31 V AC Input Low Level Voltage (VIL, max) VREF - 0.31 V Input Timing Measurement Reference Level Voltage VREF V Output Timing Measurement Reference Level Voltage VTT V Input Signal maximum peak swing 1.5 V Input minimum Signal Slew Rate 1 V/ns Termination Resistor (RT) 50 Ω Series Resistor (RS) 25 Ω Output Load Capacitance for Access Time Measurement (CL) 30 pF Rev. 0.3/May. 02 5 HYMD116G725B(L)8-M/K/H/L CAPACITANCE (TA=25 oC, f=100MHz ) Parameter Pin Symbol Min Max Unit Input Capacitance A0 ~ A11, BA0, BA1 CIN1 5 12 pF Input Capacitance /RAS, /CAS, /WE CIN2 5 12 pF Input Capacitance CKE0 CIN3 5 12 pF Input Capacitance CS0 CIN4 5 12 pF Input Capacitance CK0, /CK0 CIN5 5 12 pF Input Capacitance DM0 ~ DM8 CIN6 10 13 pF Data Input / Output Capacitance DQ0 ~ DQ63, DQS0 ~ DQS8 CIO1 10 13 pF Data Input / Output Capacitance CB0 ~ CB7 CIO2 10 13 pF Note : 1. VDD=min. to max., VDDQ=2.3V to 2.7V, VODC=VDDQ/2, VOpeak-to-peak=0.2V 2. Pins not under test are tied to GND. 3. These values are guaranteed by design and are tested on a sample basis only. OUTPUT LOAD CIRCUIT VTT RT=50Ω Output Zo=50Ω VREF CL=30pF Rev. 0.3/May. 02 6 HYMD116G725B(L)8-M/K/H/L DC CHARACTERISTICS I (TA=0 to 70 oC, Voltage referenced to VSS=0V) Parameter Input Leakage Current Symbol Add, CMD, /CS, /CKE CK, /CK ILI Min. Max -2 2 -4 4 Unit Note uA 1 Output Leakage Current ILO -5 5 uA 2 Output High Voltage VOH VTT + 0.76 - V IOH = -15.2mA Output Low Voltage VOL - VTT - 0.76 V IOL = +15.2mA Note : 1. VIN=0 to 3.6V, All other pins are not tested under VIN=0V 2. DOUT is disabled, VOUT=0 to 2.7V Rev. 0.3/May. 02 7 HYMD116G725B(L)8-M/K/H/L DC CHARACTERISTICS II (TA=0 to 70 oC, Voltage referenced to VSS=0V) Parameter Symbol Test Condition Speed Unit Note -M -K -H -L IDD0 One bank; Active - Precharge; tRC=tRC(min); tCK=tCK(min); DQ,DM and DQS inputs changing twice per clock cycle; address and control inputs changing once per clock cycle 1460 1370 1370 1370 mA Operating Current IDD1 One bank; Active - Read - Precharge; Burst Length=2; tRC=tRC(min); tCK=tCK(min); address and control inputs changing once per clock cycle 1640 1550 1550 1370 mA Precharge Power Down Standby Current IDD2P All banks idle; Power down mode ; CKE=Low, tCK=tCK(min) 785 mA Idle Standby Current IDD2F /CS=High, All banks idle; tCK=tCK(min); CKE=High; address and control inputs changing once per clock cycle. VIN=VREF for DQ, DQS and DM 965 mA Active Power Down Standby Current IDD3P One bank active; Power down mode; CKE=Low, tCK=tCK(min) 830 mA Active Standby Current IDD3N /CS=HIGH; CKE=HIGH; One bank; ActivePrecharge; tRC=tRAS(max); tCK=tCK(min); DQ, DM and DQS inputs changing twice per clock cycle; Address and other control inputs changing once per clock cycle 1010 mA Operating Current IDD4R Burst=2; Reads; Continuous burst; One bank active; Address and control inputs changing once 2360 2360 2360 2000 per clock cycle; tCK=tCK(min); IOUT=0mA mA IDD4W Burst=2; Writes; Continuous burst; One bank active; Address and control inputs changing once 2360 2360 2360 2000 per clock cycle; tCK=tCK(min); DQ, DM and DQS inputs changing twice per clock cycle mA mA Operating Current Operating Current Auto Refresh Current IDD5 tRC=tRFC(min) - 8*tCK for DDR200 at 100Mhz, 10*tCK for DDR266A & DDR266B at 133Mhz; distributed refresh Self Refresh Current IDD6 CKE=<0.2V; External clock on; tCK=tCK(min) Operating Current - Four Bank Operation IDD7 Four bank interleaving with BL=4, Refer to the following page for detailed test condition Rev. 0.3/May. 02 1700 1700 1700 1610 Normal 368 mA Low Power 359 mA 2990 2990 2990 2630 mA 8 HYMD116G725B(L)8-M/K/H/L AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter Symbol DDR266(2-2-2) DDR266A DDR266B DDR200 Min Max Min Max Min Max Min Max Unit Row Cycle Time tRC 60 - 65 - 65 - 70 - ns Auto Refresh Row Cycle Time tRFC 75 - 75 - 75 - 80 - ns Row Active Time tRAS 45 120K 45 120K 45 120K 50 120k ns Active to Read with Auto Precharge Delay tRAP 15 - 20 - 20 - 20 - ns Row Address to Column Address Delay tRCD 15 - 20 - 20 - 20 - ns Row Active to Row Active Delay tRRD 15 - 15 - 15 - 15 - ns Column Address to Column Address Delay tCCD 1 - 1 - 1 - 1 - CK Row Precharge Time tRP 15 - 20 - 20 - 20 - ns Write Recovery Time tWR 15 - 15 - 15 - 15 - ns Write to Read Command Delay tWTR 1 - 1 - 1 - 1 - CK Auto Precharge Write Recovery + Precharge Time tDAL (tWR/tCK) + (tRP/tCK) - (tWR/tCK) + (tRP/tCK) - (tWR/tCK) + (tRP/tCK) - (tWR/tCK) + (tRP/tCK) - CK 7.5 12 7.5 12 7.5 12 8.0 12 ns 7.5 12 7.5 12 10 12 10 12 ns System Clock Cycle Time CL = 2.5 CL = 2 tCK Note 16 15 Clock High Level Width tCH 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 CK Clock Low Level Width tCL 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 CK Data-Out edge to Clock edge Skew tAC -0.75 0.75 -0.75 0.75 -0.75 0.75 -0.8 0.8 ns DQS-Out edge to Clock edge Skew tDQSCK -0.75 0.75 -0.75 0.75 -0.75 0.75 -0.8 0.8 ns DQS-Out edge to Data-Out edge Skew tDQSQ - 0.5 - 0.5 - 0.5 - 0.6 ns Data-Out hold time from DQS tQH tHP -tQHS - tHP -tQHS - tHP -tQHS - tHP -tQHS - ns 1, 10 Clock Half Period tHP min (tCL,tCH) - min (tCL,tCH) - min (tCL,tCH) - min (tCL,tCH) - ns 1,9 Data Hold Skew Factor tQHS - 0.75 - 0.75 - 0.75 - 0.75 ns 10 Valid Data Output Window tDV Data-out high-impedance window from CK,/CK tHZ -0.75 0.75 -0.75 0.75 -0.75 Data-out low-impedance window from CK,/CK tLZ -0.75 0.75 -0.75 0.75 -0.75 Rev. 0.3/May. 02 tQH-tDQSQ tQH-tDQSQ tQH-tDQSQ tQH-tDQSQ ns 0.75 -0.8 0.8 ns 17 0.75 -0.8 0.8 ns 17 9 HYMD116G725B(L)8-M/K/H/L -Continued - Parameter Symbol Input Setup Time (fast slew rate) DDR266(2-2-2) DDR266A DDR266B DDR200 Unit Note - ns 2,3,5,6 1.1 - ns 2,3,5,6 - 1.1 - ns 2,4,5,6 - 1.1 - ns 2,4,5,6 2.5 - ns 6 - 0.35 - CK 0.35 - 0.35 - CK 1.25 0.75 1.25 0.75 1.25 CK 0.5 - 0.5 - 0.6 - ns - 0.5 - 0.5 - 0.6 - ns 1.75 - 1.75 - 1.75 - 2 - ns tRPRE 0.9 1.1 0.9 1.1 0.9 1.1 0.9 1.1 CK tRPST 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 CK Write DQS Preamble Setup Time tWPRES 0 - 0 - 0 - 0 - CK Write DQS Preamble Hold Time tWPREH 0.25 - 0.25 - 0.25 - 0.25 - CK Write DQS Postamble Time tWPST 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 CK Mode Register Set Delay tMRD 2 - 2 - 2 - 2 - CK Exit Self Refresh to Any Execute Command tXSC 200 - 200 - 200 - 200 - CK Average Periodic Refresh Interval tREFI - 15.6 - 15.6 - 15.6 - 15.6 us Min Max Min Max Min Max Min Max tIS 0.9 - 0.9 - 0.9 - 1.1 Input Hold Time (fast slew rate) tIH 0.9 - 0.9 - 0.9 - Input Setup Time (slow slew rate) tIS 1.0 - 1.0 - 1.0 Input Hold Time (slow slew rate) tIH 1.0 - 1.0 - 1.0 tIPW 2.2 Write DQS High Level Width tDQSH 0.35 - 0.35 - 0.35 Write DQS Low Level Width tDQSL 0.35 - 0.35 - Clock to First Rising edge of DQS-In tDQSS 0.72 1.28 0.75 Data-In Setup Time to DQS-In (DQ & DM) tDS 0.5 - Data-in Hold Time to DQS-In (DQ & DM) tDH 0.5 DQ & DM Input Pulse Width tDIPW Read DQS Preamble Time Read DQS Postamble Time Input Pulse Width Rev. 0.3/May. 02 2.2 2.2 6,7, 11~13 8 10 HYMD116G725B(L)8-M/K/H/L Note : 1. This calculation accounts for tDQSQ(max), the pulse width distortion of on-chip circuit and jitter. 2. Data sampled at the rising edges of the clock : A0~A11, BA0~BA1, CKE, /CS, /RAS, /CAS, /WE. 3. For command/address input slew rate >=1.0V/ns 4. For command/address input slew rate >=0.5V/ns and <1.0V/ns This derating table is used to increase tIS/tIH in case where the input slew-rate is below 0.5V/ns. Input Setup / Hold Slew-rate Derating Table. Input Setup / Hold Slew-rate Delta tIS Delta tIH V/ns ps ps 0.5 0 0 0.4 +50 0 0.3 +100 0 5. CK, /CK slew rates are >=1.0V/ns 6. These parameters guarantee device timing, but they are not necessarily tested on each device, and they may be guaranteed by design or tester correlation. 7. Data latched at both rising and falling edges of Data Strobes(LDQS/UDQS) : DQ, LDM/UDM. 8. Minimum of 200 cycles of stable input clocks after Self Refresh Exit command, where CKE is held high, is required to complete Self Refresh Exit and lock the internal DLL circuit of DDR SDRAM. 9. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can be greater than the minimum specification limits for tCL and tCH). 10. tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS consists of tDQSQmax, the pulse width distortion of on-chip clock circuits, data pin to pin skew and output pattern effects and p-channel to n-channel variation of the output drivers. 11.This derating table is used to increase tDS/tDH in case where the input slew-rate is below 0.5V/ns. Input Setup / Hold Slew-rate Derating Table. Input Setup / Hold Slew-rate Delta tDS Delta tDH V/ns ps ps 0.5 0 0 0.4 +75 +75 0.3 +150 +150 12. I/O Setup/Hold Plateau Derating. This derating table is used to increase tDS/tDH in case where the input level is flat below VREF +/-310mV for a duration of up to 2ns. I/O Input Level Delta tDS Delta tDH mV ps ps +280 +50 +50 13. I/O Setup/Hold Delta Inverse Slew Rate Derating. This derating table is used to increase tDS/tDH in case where the DQ and DQS slew rates differ. The Delta Inverse Slew Rate is calculated as (1/SlewRate1)-(1/SlewRate2). For example, if slew rate 1 = 0.5V/ns and Slew Rate2 = 0.4V/n then the Delta Inverse Slew Rate = -0.5ns/V. (1/SlewRate1)-(1/SlewRate2) Delta tDS Delta tDH ns/V ps ps 0 0 0 +/-0.25 +50 +50 +/- 0.5 +100 +100 14. DQS, DM and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transi tions through the DC region must be monotonic. Rev. 0.3/May. 02 11 HYMD116G725B(L)8-M/K/H/L 15. tDAL = (tWR / tCK ) + (tRP / tCK ). For each of the terms above, if not already an integer, round to the next highest integer. tCK is equal to the actual system clock cycle time. Example: For DDR266B at CL=2.5 and tCK = 7.5 ns, tDAL = (15 ns / 7.5 ns) + (20 ns / 7.5 ns) = (2.00) + (2.67) Round up each non-integer to the next highest integer: = (2) + (3), tDAL = 5 clock 16. For the parts which do not has internal RAS lockout circuit, Active to Read with Auto precharge delay should be tRAS - BL/2 x tCK. 17. tHZ and tLZ transitions occur in the same access time windows as valid data trasitions. These parameters are not referenced to a specific voltage level but specify when the device output is no longer driving (HZ), or begins driving (LZ). Rev. 0.3/May. 02 12 HYMD116G725B(L)8-M/K/H/L SIMPLIFIED COMMAND TRUTH TABLE A10/ AP Command CKEn-1 CKEn /CS /RAS /CAS /WE Extended Mode Register Set H X L L L L OP code 1,2 Mode Register Set H X L L L L OP code 1,2 H X H X X X L H H H X 1 H X L L H H H X L H L H CA H X L H L L CA H X L L H L X Read Burst Stop H X L H H L X 1 Auto Refresh H H L L L H X 1 Entry H L L L L H Exit L H H X X X L H H H Entry H L H X X X L H H H H X X X L H H H 1 H X X X 1 L V V V Device Deselect No Operation Bank Active Read Read with Autoprecharge Write Write with Autoprecharge Precharge All Banks Precharge selected Bank Self Refresh Precharge Power Down Mode Active Power Down Mode Exit L H Entry H L Exit L H X ADDR RA BA V L H L H V V Note 1 1 1,3 1 1,4 H X 1,5 L V 1 1 X 1 1 X X 1 1 1 1 ( H=Logic High Level, L=Logic Low Level, X=Don’t Care, V=Valid Data Input, OP Code=Operand Code, NOP=No Operation ) Note : 1. DM states are Don’t Care. Refer to below Write Mask Truth Table. 2. OP Code(Operand Code) consists of A0~A11 and BA0~BA1 used for Mode Registering duing Extended MRS or MRS. Before entering Mode Register Set mode, all banks must be in a precharge state and MRS command can be issued after tRP period from Prechagre command. 3. If a Read with Autoprecharge command is detected by memory component in CK(n), then there will be no command presented to activated bank until CK(n+BL/2+tRP). 4. If a Write with Autoprecharge command is detected by memory component in CK(n), then there will be no command presented to activated bank until CK(n+BL/2+1+tDPL+tRP). Last Data-In to Prechage delay(tDPL) which is also called Write Recovery Time (tWR) is needed to guarantee that the last data has been completely written. 5. If A10/AP is High when Row Precharge command being issued, BA0/BA1 are ignored and all banks are selected to be precharged. Rev. 0.3/May. 02 13 HYMD116G725B(L)8-M/K/H/L PACKAGE DIMENSIONS Front 133.35 5.25 131.35 5.171 128.95 Register PLL Register 3.0 .118 (2) 0 2.5 0.098 43.18 1.7 17.80 .700 10.0 .394 (2X)4.00 .157 5.077 Back Side 3.99 .157max 4.24 .167 (Front) 1.27+/-0.10 0.05+/-0.004 Rev. 0.3/May. 02 14 SERIAL PRESENCE DETECT SPD SPECIFICATION (16Mx72 Registered DDR DIMM) Rev. 0.3/May. 02 15 HYMD116G725B(L)8-M/K/H/L SERIAL PRESENCE DETECT Byte# Function Description 0 Number of Bytes written into serial memory at module manufacturer 1 Total number of Bytes in SPD device 2 Fundamental memory type 3 4 5 Bin Sort :M(DDR266(2-2-2),K(DDR266A@CL=2) H(DDR266B@CL=2.5),L(DDR200@CL=2) Function Supported M K Hexa Value H L M K H 128 Bytes L Note 80h 256 Bytes 08h DDR SDRAM 07h Number of row address on this assembly 12 0Ch 1 Number of column address on this assembly 10 0Ah 1 Number of physical banks on DIMM 1Bank 01h 6 Module data width 72 Bits 48h 7 Module data width (continued) - 00h 8 Module voltage Interface levels(VDDQ) 9 DDR SDRAM cycle time at CAS Latency =2.5(tCK) 10 DDR SDRAM access time from clock at CL=2.5 (tAC) 11 Module configuration type 12 Refresh rate and type 13 Primary DDR SDRAM width 14 Error checking DDR SDRAM data width 15 Minimum clock delay for back-to-back random column address(tCCD) 16 Burst lengths supported 17 Number of banks on each DDR SDRAM 18 CAS latency supported SSTL 2.5V 7.5ns 7.5ns 04h 7.5ns +/-0.75ns 8.0ns 75h 75h 75h 80h 2 +/-0.8ns 75h 75h 75h 80h 2 ECC 02h 15.6us & Self refresh 80h x8 08h x8 08h 1 CLK 01h 2,4,8 0Eh 4 Banks 04h 2, 2.5 0Ch 19 CS latency 0 01h 20 WE latency 1 02h 21 DDR SDRAM module attributes Registered Address and control input PLL 26h 22 DDR SDRAM device attributes : General +/-0.2Voltage tolerance, Concurrent Auto Precharge tRAS Lock Out C0h 23 DDR SDRAM cycle time at CL=2.0(tCK) 24 DDR SDRAM access time from clock at CL=2.0(tAC) 7.5ns 7.5ns 10ns +/-0.75ns 10ns 75h 75h A0h A0h 2 +/-0.8ns 75h 75h 75h 80h 2 25 DDR SDRAM cycle time at CL=1.5(tCK) - 00h 26 DDR SDRAM access time from clock at CL=1.5(tAC) - 00h 27 Minimum row precharge time(tRP) 15ns 20ns 20ns 20ns 3Ch 50h 50h 50h 28 Minimum row activate to row active delay(tRRD) 15ns 15ns 15ns 15ns 3Ch 3Ch 3Ch 3Ch 29 Minimum RAS to CAS delay(tRCD) 15ns 20ns 20ns 20ns 3Ch 50h 50h 50h 30 Minimum active to precharge time(tRAS) 45ns 45ns 45ns 50ns 2Dh 2Dh 2Dh 32h 31 Module row density 32 Command and address signal input setup time(tIS) 0.9ns 0.9ns 0.9ns 1.1ns 90h 90h 90h B0h 33 Command and address signal input hold time(tIH) 0.9ns 0.9ns 0.9ns 1.1ns 90h 90h 90h B0h 34 Data signal input setup time(tDS) 0.5ns 0.5ns 0.5ns 0.6ns 50h 50h 50h 60h 35 Data signal input hold time(tDH) 0.5ns 0.5ns 0.5ns 0.6ns 50h 50h 50h 60h 60ns 65ns 65ns 70ns 3Ch 41h 41h 46h 50h 36~40 128MB Reserved for VCSDRAM 2 2 20h Undefined 00h 41 Minimum active / auto-refresh Time (tRC) 42 Minimum auto-refresh to active / auto-refresh command period(tRFC) 75ns 75ns 75ns 80ns 4Bh 4Bh 4Bh 43 Maximum cycle time (tCK max) 12ns 12ns 12ns 12ns 30h 30h 30h 30h 44 Maximum DQS-DQ skew time (tDQSQ) 0.5ns 0.5ns 0.5ns 0.6ns 32h 32h 32h 3Ch 45 Maximum read data hold skew factor (tQHS) 0.75ns 0.75ns 0.75ns 0.75ns 75h 75h 75h 75h 46~61 Superset Information(may be used in future) D7h 71h 62 SPD Revision code 63 Checksum for Bytes 0~62 64 Manufacturer JEDEC ID Code 65~71 ------ Manufacturer JEDEC ID Code Rev. 0.3/May. 02 Undefined 00h Initial release - 00h 7Fh ACh Hynix JEDEC ID ADh - 00h 16 HYMD116G725B(L)8-M/K/H/L Byte# Function Supported Function Description M K Hexa Value H L M K H Hynix(Korea Area) HSA(United States Area) HSE(Europe Area) HSJ(Japan Area) Singapore Asia Area 0*h 1*h 2*h 3*h 4*h 5*h 48h 72 Manufacturing location 73 Manufacture part number(Hynix Memory Module) H 74 ----- Manufacture part number(Hynix Memory Module) Y 59h 75 ----- Manufacture part number(Hynix Memory Module) M 4Dh 76 Manufacture part number (DDR SDRAM) D 44h 77 Manufacture part number(Memory density) 1 31h 78 Manufacture part number(Module Depth) 1 31h 79 ------- Manufacture part number(Module Depth) 6 36h 80 Manufacture part number(Module type) G 47h 81 Manufacture part number(Data width) 7 37h 82 -------Manufacture part number(Data width) 2 32h 83 Manufacture part number(Refresh, # of Bank.) 84 Manufacture part number(Component Generation) 5(4K refresh,4Bank) 35h B 42h 85 Manufacture part number(Component Configuration) 8 38h 86 Manufacture part number(Hyphen) ‘-’ 2Dh 87 Manufacture part number(Minimum cycle time) 88~90 M K Manufacture part number(T.B.D) H L 4Dh 4Bh 20h Note 6 48h - L 4Ch 91 Manufacture revision code(for Component) Blank 20h 92 Manufacture revision code (for PCB) 0 30h 93 Manufacturing date(Year) - - 94 Manufacturing date(Week) - - 3 95~98 Module serial number - - 4 99~127 Manufacturer specific data (may be used in future) 128~255 Open for customer use 3 Undefined 00h 5 Undefined 00h 5 Note : 1. 2. 3. 4. 5. 6. The bank address is excluded These value is based on the component specification These bytes are programmed by code of date week & date year These bytes apply to Hynix’s own Module Serial Number system These bytes undefined and coded as ‘00h’ Refer to Hynix web site Byte 85~86, Low power part Byte# Function Description 85 86 Manufacture part number(Low power part) Manufacture part number(Component Configuration) Rev. 0.3/May. 02 Function Supported M K H L 8 L Hexa Value M K H L Note 4Ch 38h 17