TP0610KL/BS250KL Vishay Siliconix New Product P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS(min) (V) rDS(on) () VGS(th) (V) 6 @ VGS = −10 V −60 60 10 @ VGS = −4.5 V ID (A) 1 2 D 3 “S” TP 0610KL xxyy Device Marking Front View G 2 S 3 “S” = Siliconix Logo xxyy = Date Code Ordering Information: TP0610KL-TR1 D 1 D Top View D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply, Converter Circuits D Motor Control −0.21 Device Marking Front View G APPLICATIONS −0.27 −1 1 to −3.0 30 TO-92-18RM (TO-18 Lead Form) TO-226AA (TO-92) S D TrenchFETr Power MOSFET D ESD Protected: 2000 V “S” BS 250KL xxyy Top View 100 G “S” = Siliconix Logo xxyy = Date Code S Ordering Information: BS250KL-TR1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS −60 Gate-Source Voltage VGS "20 Continuous Drain Current Pulse Drain TA = 25_C TA = 70_C Currenta Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range ID IDM TA = 25_C TA = 70_C PD Unit V −0.27 −0.22 A −1.0 0.8 0.51 W RthJA 156 _C/W TJ, Tstg −55 to 150 _C Notes a. Pulse width limited by maximum junction temperature. Document Number: 72712 S-40244—Rev. A, 16-Feb-04 www.vishay.com 1 TP0610KL/BS250KL Vishay Siliconix New Product SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = −10 µA −60 VGS(th) VDS = VGS, ID = −250 µA −1 Typ Max −2.1 −3.0 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate Body Leakage Gate-Body IGSS Zero Gate Voltage Drain Current IDSS On State Drain Currenta On-State ID(on) D( ) Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltagea VDS = 0 V, VGS = "20 V "10 VDS = 0 V, VGS = "10 V "200 VDS = 0 V, VGS = "10 V, TJ = 85_C "500 VDS = 0 V, VGS = "5 V "100 VDS = −60 V, VGS = 0 V −1 VDS = −60 V, VGS = 0 V, TJ = 55_C −10 VDS = −10 V, VGS = −4.5 V −50 VDS = −10 V, VGS = −10 V −600 A nA A mA VGS = −4.5 V, ID = −25 mA 5.5 10 VGS = −10 V, ID = −500 mA 3.1 6 VGS = −10 V, ID = −500 mA, TJ = 125_C 4.7 9 gfs VDS = −10 V, ID = −100 mA 180 VSD IS = −200 mA, VGS = 0 V −0.9 −1.4 1.7 3 VDS = −30 V, VGS = −15 V, ID ^ −500 mA 0.26 rDS(on) V mS V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 0.46 Rg 285 td(on) 2.4 5 15.5 25 21 35 12.5 20 Gate Resistance Turn On Time Turn-On VDD = −25 V, RL = 150 ID ^ −150 mA, mA VGEN = −10 V Rg = 10 tr td(off) Turn Off Time Turn-Off tf nC ns Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values. Output Characteristics 1.0 Transfer Characteristics 1200 VGS = 10 V 8V 7V 0.6 I D − Drain Current (mA) 0.8 I D − Drain Current (A) TJ = −55_C 6V 0.4 5V 0.2 900 25_C 125_C 600 300 4V 0.0 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 5 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) Document Number: 72712 S-40244—Rev. A, 16-Feb-04 TP0610KL/BS250KL Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values. On-Resistance vs. Drain Current 20 Capacitance 40 VGS = 4.5 V 16 32 C − Capacitance (pF) r DS(on) − On-Resistance ( ) VGS = 0 V 12 VGS = 5 V 8 VGS = 10 V 4 Ciss 24 16 Coss 8 Crss 0 0 0 200 400 600 800 0 1000 5 ID − Drain Current (mA) 25 1.5 VDS = 30 V VGS = 10 V @ 500 mA rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) ID = 500 mA VDS = 48 V 9 6 3 0 0.0 20 On-Resistance vs. Junction Temperature 1.8 12 15 VDS − Drain-to-Source Voltage (V) Gate Charge 15 10 1.2 VGS = 4.5 V @ 25 mA 0.9 0.6 0.3 0.3 0.6 0.9 1.2 1.5 0.0 −50 1.8 Qg − Total Gate Charge (nC) −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-Source Voltage 10 1000 r DS(on) − On-Resistance ( ) I S − Source Current (A) VGS = 0 V 100 TJ = 125_C 10 TJ = 25_C TJ = −55_C ID = 500 mA 6 4 ID = 200 mA 2 0 1 0.00 8 0.3 0.6 0.9 1.2 VSD − Source-to-Drain Voltage (V) Document Number: 72712 S-40244—Rev. A, 16-Feb-04 1.5 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 TP0610KL/BS250KL Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values. Threshold Voltage Variance Over Temperature Single Pulse Power, Junction-to-Ambient 0.5 20 ID = 250 A 16 0.3 0.2 Power (W) V GS(th) Variance (V) 0.4 0.1 −0.0 −0.1 12 8 4 −0.2 −0.3 −50 0 −25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600 Time (sec) TJ − Junction Temperature (_C) 10 Safe Operating Area IDM Limited rDS(on) Limited I D − Drain Current (A) 1 1 ms 10 ms 100 ms 0.1 1s ID(on) Limited 0.01 10 s dc TA = 25_C Single Pulse BVDSS Limited 0.001 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 156_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72712 S-40244—Rev. A, 16-Feb-04