Samsung DS K7M323625M 1mx36 & 2mx18 flow-through ntram Datasheet

K7M323625M
K7M321825M
1Mx36 & 2Mx18 Flow-Through NtRAMTM
Document Title
1Mx36 & 2Mx18-Bit Flow Through NtRAMTM
Revision History
Rev. No.
History
Draft Date
Remark
0.0
1. Initial document.
May. 10. 2001
Preliminary
0.1
1. Add 165FBGA package
Aug. 29. 2001
Preliminary
0.2
1. Update JTAG scan order
Dec. 03. 2001
Preliminary
0.3
1. Change pin out for 165FBGA
- x18/x36 ; 11B => from A to NC , 2R ==> from NC to A
Feb. 14. 2002
Preliminary
0.4
1. Insert pin at JTAG scan order of 165FBGA in connection with
pin out change
- x18/x36 ; insert Pin ID of 2R to BIT number of 69
Apr. 20. 2002
Preliminary
0.5
1. Add Icc, Isb, Isb1 and Isb2 values.
May. 10. 2002
Preliminary
1.0
1. Final datasheet release.
Sep. 26. 2002
Final
1.1
1. Change the Stand-by current (Isb)
Before
After
Isb - 65 : 100
140
- 75 :
90
130
- 85 :
80
130
Isb1
:
90
110
Isb2
:
80
100
Oct. 17. 2003
Final
2.0
1. Delete the 119BGA and 165FBGA package
2. Delete the 6.5ns and 8.5ns speed bin
Nov. 18, 2003
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Nov. 2003
Rev 2.0
K7M323625M
K7M321825M
1Mx36 & 2Mx18 Flow-Through NtRAMTM
32Mb NtRAM(Flow Through / Pipelined) Ordering Information
Org.
Part Number
K7M321825M-QC75
Mode
VDD
Speed
FT ; Access Time(ns)
Pipelined ; Cycle Time(MHz)
FlowThrough
3.3
7.5ns
2Mx18 K7N321801M-Q(F)C25/20/16/13
Pipelined
3.3
250/200/167/133MHz
K7N321845M-Q(F)C25/20/16/13
Pipelined
2.5
250/200/167/133MHz
FlowThrough
3.3
7.5ns
1Mx36 K7N323601M-Q(F)C25/20/16/13
K7M323625M-QC75
Pipelined
3.3
250/200/167/133MHz
K7N323645M-Q(F)C25/20/16/13
Pipelined
2.5
250/200/167/133MHz
-2-
PKG
Temp
C
Q:100TQFP (Commercial
F:165FBGA Temperature
Range)
Nov. 2003
Rev 2.0
K7M323625M
K7M321825M
1Mx36 & 2Mx18 Flow-Through NtRAMTM
1Mx36 & 2Mx18-Bit Flow Through NtRAMTM
FEATURES
GENERAL DESCRIPTION
• 3.3V+0.165V/-0.165V Power Supply.
• I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O
or 2.5V+0.4V/-0.125V for 2.5V I/O
• Byte Writable Function.
• Enable clock and suspend operation.
• Single READ/WRITE control pin.
• Self-Timed Write Cycle.
• Three Chip Enable for simple depth expansion with no data
contention .
• A interleaved burst or a linear burst mode.
• Asynchronous output enable control.
• Power Down mode.
• TTL-Level Three-State Outputs.
• 100-TQFP-1420A .
The K7M323625M and K7M321825M are 37,748,736-bits Synchronous Static SRAMs.
The NtRAMTM, or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles.
Address, data inputs, and all control signals except output
enable and linear burst order are synchronized to input clock.
Burst order control must be tied "High or Low".
Asynchronous inputs include the sleep mode enable(ZZ).
Output Enable controls the outputs at any given time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-chip
write pulse generation
and provides increased timing flexibility for incoming signals.
For read cycles, Flow-Through SRAM allows output data to
simply flow freely from the memory array.
The K7M323625M and K7M321825M are implemented with
SAMSUNG′s high performance CMOS technology and is available in 100pin TQFP packages. Multiple power and ground pins
minimize ground bounce.
FAST ACCESS TIMES
Parameter
Symbol
-75
Unit
Cycle Time
tCYC
8.5
ns
Clock Access Time
tCD
7.5
ns
Output Enable Access Time
tOE
3.5
ns
LOGIC BLOCK DIAGRAM
LBO
A [0:19]or
A [0:20]
CKE
ADDRESS
REGISTER A2 ~A 19 or A2 ~A 20
CONTROL
LOGIC
CLK
A0~A1
ADV
WE
BW x
(x=a,b,c,d or a,b)
A′0~A′1
1Mx36 , 2Mx18
MEMORY
ARRAY
WRITE
ADDRESS
REGISTER
K
K
CONTROL
REGISTER
CS 1
CS 2
CS 2
BURST
ADDRESS
COUNTER
DATA-IN
REGISTER
CONTROL
LOGIC
BUFFER
OE
ZZ
36 or 18
DQa0 ~ DQd7 or DQa 0 ~ DQb8
DQPa ~ DQPd
NtRAM TM and No Turnaround Random Access Memory are trademarks of Samsung.
-3-
Nov. 2003
Rev 2.0
K7M323625M
K7M321825M
1Mx36 & 2Mx18 Flow-Through NtRAMTM
A6
A7
CS 1
CS 2
BWd
BWc
BWb
BWa
CS 2
V DD
V SS
CLK
WE
CK E
OE
ADV
A 18
A 17
A8
A9
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
100 Pin TQFP
(20mm x 14mm)
38
39
40
41
42
43
44
45
46
47
48
49
50
N.C.
N.C.
V SS
V DD
N.C.
A 19
A 10
A 11
A 12
A 13
A 14
A 15
A 16
35
A2
37
34
A3
A0
33
A4
36
32
A1
31
K7M323625M(1Mx36)
A5
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
LBO
DQPc
DQc0
DQc1
V DDQ
V SSQ
DQc2
DQc3
DQc4
DQc5
V SSQ
V DDQ
DQc6
DQc7
Vss
V DD
V DD
V SS
DQd 0
DQd 1
V DDQ
V SSQ
DQd 2
DQd 3
DQd 4
DQd 5
V SSQ
V DDQ
DQd 6
DQd 7
DQPd
100
PIN CONFIGURATION(TOP VIEW)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
DQPb
DQb 7
DQb 6
V DDQ
V SSQ
DQb 5
DQb 4
DQb 3
DQb 2
V SSQ
V DDQ
DQb 1
DQb 0
V SS
V SS
V DD
ZZ
DQa 7
DQa 6
V DDQ
V SSQ
DQa 5
DQa 4
DQa 3
DQa 2
V SSQ
V DDQ
DQa 1
DQa 0
DQPa
PIN NAME
SYMBOL
A 0 - A 19
PIN NAME
TQFP PIN NO.
SYMBOL
Address Inputs
32,33,34,35,36,37,43
4445,46,47,48,49,50,
81,82,83,84,99,100
ADV
Address Advance/Load
85
WE
Read/Write Control Input 88
CLK
Clock
89
CKE
Clock Enable
87
CS 1
Chip Select
98
CS 2
Chip Select
97
CS 2
Chip Select
92
B Wx(x=a,b,c,d) Byte Write Inputs
93,94,95,96
OE
Output Enable
86
ZZ
Power Sleep Mode
64
LBO
Burst Mode Control
31
PIN NAME
TQFP PIN NO.
V DD
V SS
Power Supply(+3.3V) 15,16,41,65,91
Ground
14,17,40,66,67,90
N.C.
No Connect
38,39,42
DQa0~a7
DQb0~b7
DQc0 ~ c7
DQd0~d7
DQPa~P d
Data Inputs/Outputs
Data Inputs/Outputs
Data Inputs/Outputs
Data Inputs/Outputs
Data Inputs/Outputs
52,53,56,57,58,59,62,63
68,69,72,73,74,75,78,79
2,3,6,7,8,9,12,13
18,19,22,23,24,25,28,29
51,80,1,30
V DDQ
Output Power Supply
(2.5V or 3.3V)
Output Ground
4,11,20,27,54,61,70,77
V SSQ
5,10,21,26,55,60,71,76
Notes : 1. A0 and A1 are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
-4-
Nov. 2003
Rev 2.0
K7M323625M
K7M321825M
1Mx36 & 2Mx18 Flow-Through NtRAMTM
A7
CS 1
CS 2
N.C.
N.C.
BWb
BWa
CS 2
V DD
V SS
CLK
WE
CK E
OE
ADV
A 19
A 18
A8
A9
98
97
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
96
A6
99
100 Pin TQFP
(20mm x 14mm)
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
A0
N.C.
N.C.
V SS
V DD
N.C.
A 20
A 11
A 12
A 13
A 14
A 15
A 16
A 17
34
A3
A1
33
A4
35
32
A2
31
K7M321825M(2Mx18)
A5
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
LBO
N.C.
N.C.
N.C.
V DDQ
V SSQ
N.C.
N.C.
DQb 8
DQb 7
V SSQ
V DDQ
DQb 6
DQb 5
V SS
V DD
V DD
V SS
DQb 4
DQb 3
V DDQ
V SSQ
DQb 2
DQb 1
DQb 0
N.C.
V SSQ
V DDQ
N.C.
N.C.
N.C.
100
PIN CONFIGURATION(TOP VIEW)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
A 10
N.C.
N.C.
V DDQ
V SSQ
N.C.
DQa 0
DQa 1
DQa 2
V SSQ
V DDQ
DQa 3
DQa 4
V SS
V SS
V DD
ZZ
DQa 5
DQa 6
V DDQ
V SSQ
DQa 7
DQa 8
N.C.
N.C.
V SSQ
V DDQ
N.C.
N.C.
N.C.
PIN NAME
SYMBOL
A 0 - A 20
PIN NAME
Address Inputs
TQFP PIN NO.
32,33,34,35,36,37,43
44,45,46,47,48,49,50,
80,81,82,83,84,99,100
ADV
Address Advance/Load
85
WE
Read/Write Control Input 88
CLK
Clock
89
CKE
Clock Enable
87
CS 1
Chip Select
98
CS 2
Chip Select
97
CS 2
Chip Select
92
BW x(x=a,b) Byte Write Inputs
93,94
OE
Output Enable
86
ZZ
Power Sleep Mode
64
LBO
Burst Mode Control
31
SYMBOL
PIN NAME
TQFP PIN NO.
V DD
V SS
Power Supply(+3.3V)
Ground
15,16,41,65,91
14,17,40,66,67,90
N.C.
No Connect
1,2,3,6,7,25,28,29,30,
38,39,42,51,52,53,
56,57,75,78,79,95,96
DQa0 ~a8
DQb0 ~b8
Data Inputs/Outputs
Data Inputs/Outputs
58,59,62,63,68,69,72,73,74
8,9,12,13,18,19,22,23,24
V DDQ
Output Power Supply
(2.5V or 3.3V)
Output Ground
4,11,20,27,54,61,70,77
V SSQ
5,10,21,26,55,60,71,76
Notes : 1. A0 and A1 are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
-5-
Nov. 2003
Rev 2.0
K7M323625M
K7M321825M
1Mx36 & 2Mx18 Flow-Through NtRAMTM
FUNCTION DESCRIPTION
The K7M323625M and K7M321825M are NtRAMTM designed to sustain 100% bus bandwidth by eliminating turnaround cycle when
there is transition from Read to Write, or vice versa.
All inputs (with the exception of O E, LBO and ZZ) are synchronized to rising clock edges.
All read, write and deselect cycles are initiated by the ADV input. Subsequent burst addresses can be internally generated by the
burst advance pin (ADV). ADV should be driven to Low once the device has been deselected in order to load a new address for next
operation.
Clock Enable(CKE) pin allows the operation of the chip to be suspended as long as necessary. When CKE is high, all synchronous
inputs are ignored and the internal device registers will hold their previous values.
NtRAM TM latches external address and initiates a cycle, when CKE, ADV are driven to low and all three chip enables( CS 1, CS 2, CS 2)
are active .
Output Enable(OE ) can be used to disable the output at any given time.
Read operation is initiated when at the rising edge of the clock, the address presented to the address inputs are latched in the
address register, CKE is driven low, all three chip enables( CS 1, CS 2 , CS 2) are active, the write enable input signals WE are driven
high, and ADV driven low. Data appears at the outputs within the same clock cycle as the address for the data. Also during read
operation OE must be driven low for the device to drive out the requested data.
Write operation occurs when WE is driven low at the rising edge of the clock. BW [d:a] can be used for byte write operation. The Flow
Through NtRAMTM uses a late write cycle to utilize 100% of the bandwidth.
At the first rising edge of the clock, WE and address are registered, and the data associated with that address is required one cycle
later.
Subsequent addresses are generated by ADV High for the burst access as shown below. The starting point of the burst seguence is
provided by the external address. The burst address counter wraps around to its initial state upon completion.
The burst sequence is determined by the state of the LBO pin. When this pin is low, linear burst sequence is selected.
And when this pin is high, Interleaved burst sequence is selected.
During normal operation, ZZ must be driven low. When ZZ is driven high, the SRAM will enter a Power Sleep Mode after 2 cycles. At
this time, internal state of the SRAM is preserved. When ZZ returns to low, the SRAM normally operates after 2 cycles of wake up
time.
BURST SEQUENCE TABLE
LBO PIN
HIGH
First Address
Fourth Address
(Interleaved Burst, LBO=High)
Case 1
A1
0
0
1
1
Case 2
A0
0
1
0
1
A1
0
0
1
1
Case 3
A0
1
0
1
0
A1
1
1
0
0
BQ TABLE
LBO PIN
Case 4
A0
0
1
0
1
A1
1
1
0
0
A0
1
0
1
0
(Linear Burst, LBO =Low)
LOW
First Address
Fourth Address
Case 1
A1
0
0
1
1
Case 2
A0
0
1
0
1
A1
0
1
1
0
Case 3
A0
1
0
1
0
A1
1
1
0
0
Case 4
A0
0
1
0
1
A1
1
0
0
1
A0
1
0
1
0
Note : 1. LBO pin must be tied to High or Low, and Floating State must not be allowed .
-6-
Nov. 2003
Rev 2.0
K7M323625M
K7M321825M
1Mx36 & 2Mx18 Flow-Through NtRAMTM
STATE DIAGRAM FOR N tRAMTM
WRITE
READ
READ
BEGIN
READ
BEGIN
WRITE
DS
RE
AD
W
DS
AD
W
R
IT
E
ST
BUR
TE
E
R
BURST
DS
BURST
READ
BURST
WRITE
COMMAND
DS
WRI
DESELECT
DS
BURST
TE
BUR
ST
D
R EA
DS
RI
WRITE
BURST
ACTION
DESELECT
READ
BEGIN READ
WRITE
BEGIN WRITE
BURST
BEGIN READ
BEGIN WRITE
CONTINUE DESELECT
Notes : 1. An IGNORE CLOCK EDGE cycle is not shown is the above diagram. This is because CKE HIGH only blocks the clock(CLK) input and does
not change the state of the device.
2. States change on the rising edge of the clock(CLK)
-7-
Nov. 2003
Rev 2.0
K7M323625M
K7M321825M
1Mx36 & 2Mx18 Flow-Through NtRAMTM
TRUTH TABLES
SYNCHRONOUS TRUTH TABLE
CS 1
CS2
CS 2
ADV
WE
BWx
OE
CKE
CLK
ADDRESS ACCESSED
OPERATION
H
X
X
L
X
X
X
L
↑
N/A
Not Selected
X
L
X
L
X
X
X
L
↑
N/A
Not Selected
X
X
H
L
X
X
X
L
↑
N/A
Not Selected
X
X
X
H
X
X
X
L
↑
N/A
Not Selected Continue
L
H
L
L
H
X
L
L
↑
External Address
Begin Burst Read Cycle
X
X
X
H
X
X
L
L
↑
Next Address
Continue Burst Read Cycle
L
H
L
L
H
X
H
L
↑
External Address
NOP/Dummy Read
X
X
X
H
X
X
H
L
↑
Next Address
Dummy Read
L
H
L
L
L
L
X
L
↑
External Address
Begin Burst Write Cycle
X
X
X
H
X
L
X
L
↑
Next Address
Continue Burst Write Cycle
L
H
L
L
L
H
X
L
↑
N/A
NOP/Write Abort
X
X
X
H
X
H
X
L
↑
Next Address
Write Abort
X
X
X
X
X
X
X
H
↑
Current Address
Ignore Clock
Notes : 1. X means "Don ′t Care".
2. The rising edge of clock is symbolized by (↑).
3. A continue deselect cycle can only be enterd if a deselect cycle is executed first.
4. WRITE = L means Write operation in WRITE TRUTH TABLE.
WRITE = H means Read operation in WRITE TRUTH TABLE.
5. Operation finally depends on status of asynchronous input pins(ZZ and OE).
WRITE TRUTH TABLE( x36)
WE
BWa
BWb
BW c
BW d
OPERATION
H
X
X
X
X
READ
L
L
H
H
H
WRITE BYTE a
L
H
L
H
H
WRITE BYTE b
L
H
H
L
H
WRITE BYTE c
L
H
H
H
L
WRITE BYTE d
L
L
L
L
L
WRITE ALL BYTEs
L
H
H
H
H
WRITE ABORT/NOP
Notes : 1. X means "Don′t Care".
2. All inputs in this table must meet setup and hold time around the rising edge of CLK(↑).
WRITE TRUTH TABLE(x18)
WE
BWa
BWb
OPERATION
H
X
X
READ
L
L
H
WRITE BYTE a
L
H
L
WRITE BYTE b
L
L
L
WRITE ALL BYTEs
L
H
H
WRITE ABORT/NOP
Notes : 1. X means "Don′t Care".
2. All inputs in this table must meet setup and hold time around the rising edge of CLK( ↑).
-8-
Nov. 2003
Rev 2.0
K7M323625M
K7M321825M
1Mx36 & 2Mx18 Flow-Through NtRAMTM
ASYNCHRONOUS TRUTH TABLE
Operation
ZZ
OE
I/O STATUS
Sleep Mode
H
X
High-Z
L
L
DQ
L
H
High-Z
Write
L
X
Din, High-Z
Deselected
L
X
High-Z
Read
Notes
1. X means "Don′ t Care".
2. Sleep Mode means power Sleep Mode of which stand-by current does
not depend on cycle time.
3. Deselected means power Sleep Mode of which stand-by current
depends on cycle time.
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
SYMBOL
RATING
UNIT
V
Voltage on V DD Supply Relative to V SS
V DD
-0.3 to 4.6
Voltage on Any Other Pin Relative to VSS
V IN
-0.3 to VDD+0.3
V
Power Dissipation
PD
1.6
W
Storage Temperature
TSTG
-65 to 150
°C
Operating Temperature
T OPR
0 to 70
°C
Storage Temperature Range Under Bias
TBIAS
-10 to 85
°C
*Notes : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING CONDITIONS at 3.3V I/O(0°C ≤ TA ≤ 70°C)
PARAMETER
Supply Voltage
Ground
SYMBOL
MIN
Typ.
MAX
UNIT
V DD
3.135
3.3
3.465
V
V DDQ
3.135
3.3
3.465
V
V SS
0
0
0
V
OPERATING CONDITIONS at 2.5V I/O(0°C ≤ TA ≤ 70°C)
PARAMETER
Supply Voltage
Ground
SYMBOL
MIN
Typ.
MAX
UNIT
V DD
3.135
3.3
3.465
V
V DDQ
2.375
2.5
2.9
V
V SS
0
0
0
V
CAPACITANCE*(TA =25°C, f=1MHz)
PARAMETER
Input Capacitance
Output Capacitance
SYMBOL
TEST CONDITION
TYP
MAX
UNIT
CIN
V IN=0V
-
5
pF
C OUT
V OUT=0V
-
7
pF
*Note : Sampled not 100% tested.
-9-
Nov. 2003
Rev 2.0
K7M323625M
K7M321825M
1Mx36 & 2Mx18 Flow-Through NtRAMTM
DC ELECTRICAL CHARACTERISTICS (VDD =3.3V+0.165V/-0.165V, TA =0°C to +70°C)
MIN
MAX
Input Leakage Current(except ZZ)
PARAMETER
SYMBOL
IIL
V DD=Max ; V IN=VSS to V DD
-2
+2
µA
Output Leakage Current
IOL
Output Disabled,
-2
+2
µA
-75
-
290
mA
-75
-
130
mA
-
110
mA
-
100
mA
0.4
V
Operating Current
ICC
TEST CONDITIONS
Device Selected, I OUT =0mA,
ZZ ≤V IL , Cycle Time ≥ tCYC Min
UNIT NOTES
1,2
Device deselected, I OUT =0mA,
ISB
ZZ ≤V IL , f=Max,
All Inputs ≤0.2V or ≥ V DD-0.2V
Device deselected, I OUT =0mA,
Standby Current
ISB1
ZZ ≤0.2V, f=0,
All Inputs=fixed (VDD -0.2V or
Device deselected, I OUT =0mA,
ISB2
ZZ≥V DD-0.2V, f=Max, All
Inputs ≤V IL or ≥V IH
Output Low Voltage(3.3V I/O)
V OL
IOL=8.0mA
-
Output High Voltage(3.3V I/O)
VO H
IO H=-4.0mA
2.4
-
V
Output Low Voltage(2.5V I/O)
V OL
IOL=1.0mA
-
0.4
V
Output High Voltage(2.5V I/O)
VO H
IO H=-1.0mA
Input Low Voltage(3.3V I/O)
V IL
Input High Voltage(3.3V I/O)
2.0
-
V
-0.3*
0.8
V
VI H
2.0
V DD+0.3**
V
Input Low Voltage(2.5V I/O)
V IL
-0.3*
0.7
V
Input High Voltage(2.5V I/O)
VI H
1.7
V DD+0.3**
V
3
3
Notes : 1. Reference AC Operating Conditions and Characteristics for input and timing.
2. Data states are all zero.
3. In Case of I/O Pins, the Max. VIH =V DDQ +0.3V.
VIH
VSS
VSS- 1.0V
20% tCYC (MIN)
TEST CONDITIONS
(VDD=3.3V+0.165V/-0.165V,VDDQ=3.3V+0.165/-0.165V or VDD=3.3V+0.165V/-0.165V,VDDQ=2.5V+0.4V/-0.125V, TA=0to70°C)
PARAMETER
VALUE
Input Pulse Level(for 3.3V I/O)
0 to 3.0V
Input Pulse Level(for 2.5V I/O)
0 to 2.5V
Input Rise and Fall Time(Measured at 20% to 80% for 3.3V I/O)
1.0V/ns
Input Rise and Fall Time(Measured at 20% to 80% for 2.5V I/O)
1.0V/ns
Input and Output Timing Reference Levels for 3.3V I/O
1.5V
Input and Output Timing Reference Levels for 2.5V I/O
V DDQ/2
Output Load
See Fig. 1
- 10 -
Nov. 2003
Rev 2.0
K7M323625M
K7M321825M
1Mx36 & 2Mx18 Flow-Through NtRAMTM
Output Load(A)
Output Load(B),
(for tLZC, tLZOE, tHZOE & tHZC)
+3.3V for 3.3V I/O
/+2.5V for 2.5V I/O
RL=50Ω
Dout
Zo=50Ω
30pF*
VL=1.5V for 3.3V I/O
V DDQ/2 for 2.5V I/O
319Ω / 1667Ω
Dout
353Ω / 1538Ω
5pF*
* Including Scope and Jig Capacitance
Fig. 1
AC TIMING CHARACTERISTICS (VDD=3.3V+0.165V/-0.165V, T A=0°C to +70°C)
-75
PARAMETER
SYMBOL
MIN
MAX
UNIT
Cycle Time
tCYC
8.5
-
ns
Clock Access Time
tCD
-
7.5
ns
Output Enable to Data Valid
tOE
-
3.5
ns
Clock High to Output Low-Z
tLZC
2.5
-
ns
Output Hold from Clock High
tOH
2.5
-
ns
Output Enable Low to Output Low-Z
tLZOE
0
-
ns
Output Enable High to Output High-Z
tHZOE
-
3.5
ns
Clock High to Output High-Z
tHZC
-
4.0
ns
Clock High Pulse Width
tCH
2.8
-
ns
Clock Low Pulse Width
tCL
2.8
-
ns
Address Setup to Clock High
tAS
2.0
-
ns
CKE Setup to Clock High
tCES
2.0
-
ns
Data Setup to Clock High
tDS
2.0
-
ns
Write Setup to Clock High (WE, BW X )
tWS
2.0
-
ns
Address Advance Setup to Clock High
tADVS
2.0
-
ns
Chip Select Setup to Clock High
tCSS
2.0
-
ns
Address Hold from Clock High
tAH
0.5
-
ns
CKE Hold from Clock High
tCEH
0.5
-
ns
Data Hold from Clock High
tDH
0.5
-
ns
Write Hold from Clock High (WE , BW X)
tWH
0.5
-
ns
Address Advance Hold from Clock High
tADVH
0.5
-
ns
Chip Select Hold from Clock High
tCSH
0.5
-
ns
ZZ High to Power Down
tPDS
2
-
cycle
ZZ Low to Power Up
tPUS
2
-
cycle
Notes : 1. All address inputs must meet the specified setup and hold times for all rising clock(CLK) edges when ADV is sampled low and CS is sampled
low. All other synchronous inputs must meet the specified setup and hold times whenever this device is chip selected.
2. Chip selects must be valid at each rising edge of CLK(when ADV is Low) to remain enabled.
3. A write cycle is defined by WE low having been registerd into the device at ADV Low, A Read cycle is defined by WE High with ADV Low,
Both cases must meet setup and hold times.
4. To avoid bus contention, At a given vlotage and temperature tLZC is more than tHZC.
The soecs as shown do not imply bus contention because tLZC is a Min. parameter that is worst case at totally different test conditions
(0°C,3.465V) than tH Z C, which is a Max. parameter(worst case at 70°C,3.135V)
It is not possible for two SRAMs on the same board to be at such different voltage and temperatue.
- 11 -
Nov. 2003
Rev 2.0
K7M323625M
K7M321825M
1Mx36 & 2Mx18 Flow-Through NtRAMTM
SLEEP MODE
SLEEP MODE is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of
SLEEP MODE is dictated by the length of time the ZZ is in a High state.
After entering SLEEP MODE, all inputs except ZZ become disabled and all outputs go to High-Z
The ZZ pin is an asynchronous, active high input that causes the device to enter SLEEP MODE.
When the ZZ pin becomes a logic High, I SB2 is guaranteed after the time t ZZI is met. Any operation pending when entering SLEEP
MODE is not guaranteed to successful complete. Therefore, SLEEP MODE (READ or WRITE) must not be initiated until valid pending operations are completed. similarly, when exiting SLEEP MODE during t PUS, only a DESELECT or READ cycle should be given
while the SRAM is transitioning out of SLEEP MODE.
SLEEP MODE ELECTRICAL CHARACTERISTICS
DESCRIPTION
Current during SLEEP MODE
CONDITIONS
SYMBOL
ZZ ≥ V IH
ISB2
MIN
MAX
60
UNITS
mA
ZZ active to input ignored
tPDS
2
cycle
ZZ inactive to input sampled
tPUS
2
cycle
ZZ active to SLEEP current
tZZI
ZZ inactive to exit SLEEP current
tRZZI
2
cycle
0
SLEEP MODE WAVEFORM
K
t PDS
ZZ setup cycle
tPUS
ZZ recovery cycle
ZZ
t ZZI
Isupply
ISB2
tRZZI
All inputs
(except ZZ)
Deselect or Read Only
Deselect or Read Only
Normal
operation
cycle
Outputs
(Q)
High-Z
DON′ T CARE
- 12 -
Nov. 2003
Rev 2.0
- 13 -
Data Out
OE
ADV
CS
WRITE
Address
CKE
Clock
A1
tLZOE
tOE
tADVH
tCSH
tWH
tAH
Q 1-1
tHZOE
A2
tCEH
Q 2-1
tCD
tOH
Q2-2
Q 2-3
NO TE S : WRITE = L me ans WE = L, an d B Wx = L
CS = L mean s CS1 = L, CS2 = H and CS2 = L
CS = H means CS1 = H, or CS1 = L and CS 2 = H, or CS 1 = L, and CS 2 = L
tADVS
tCSS
tWS
tAS
tCES
tCL
tCYC
tCH
Q2-4
A3
TIMING WAVEFORM OF READ CYCLE
Q 3-1
Q 3-2
Q3-3
Q3-4
tHZC
Un defined
Do n′t Care
K7M323625M
K7M321825M
1Mx36 & 2Mx18 Flow-Through NtRAMTM
Nov. 2003
Rev 2.0
- 14 -
Data Out
Data In
OE
ADV
CS
WRITE
Address
CKE
Clock
tHZOE
D1-1
A2
tCYC
D2-1
tCL
D2-2
NOTES : WRITE = L means WE = L, a nd BWx = L
CS = L me ans CS1 = L, CS2 = H a nd CS 2 = L
CS = H mean s CS1 = H, or CS1 = L and CS2 = H, or CS1 = L, and CS2 = L
Q0-4
A1
tCES tCEH
tCH
D2-3
D2-4
A3
TIMING WAVEFORM OF WRTE CYCLE
D3-1
tDS
D3-2
tDH
D3-3
D3-4
Undefined
Don′t Ca re
K7M323625M
K7M321825M
1Mx36 & 2Mx18 Flow-Through NtRAMTM
Nov. 2003
Rev 2.0
- 15 -
Data In
Data Out
OE
ADV
CS
WRITE
Address
CKE
Clock
Q1
A2
tDS
D2
A3
tDH
Q3
A4
NOTES : WRITE = L means WE = L, a nd BWx = L
CS = L me ans CS1 = L, CS2 = H a nd CS 2 = L
CS = H mean s CS1 = H, or CS1 = L and CS2 = H, or CS1 = L, and CS2 = L
tOE
tLZOE
A1
tCES tCEH
Q4
A5
D5
A6
Q6
A7
TIMING WAVEFORM OF SINGLE READ/WRITE
tCH
Q7
tCYC
tCL
Undefined
Don′t Car e
K7M323625M
K7M321825M
1Mx36 & 2Mx18 Flow-Through NtRAMTM
Nov. 2003
Rev 2.0
- 16 -
Data In
tCD
tLZC
A1
tCES tCEH
Q1
A2
tHZC
tDS
D2
A3
tDH
NO TE S : WRITE = L me ans WE = L, an d B Wx = L
CS = L mean s CS1 = L, CS2 = H and CS2 = L
CS = H means CS1 = H, or CS1 = L and CS 2 = H, or CS 1 = L, and CS 2 = L
Data Out
OE
ADV
CS
WRITE
Address
CKE
Clock
Q3
A4
TIMING WAVEFORM OF CKE OPERATION
tCH
Q4
tCYC
tCL
A5
Undefined
Don′t Care
K7M323625M
K7M321825M
1Mx36 & 2Mx18 Flow-Through NtRAMTM
Nov. 2003
Rev 2.0
- 17 -
Data In
Data Out
OE
ADV
CS
WRITE
Address
CKE
Clock
tOE
tLZOE
A1
tCEH
Q1
A2
Q2
tHZC
A3
D3
tDS tDH
NO TE S : WRITE = L me ans WE = L, an d B Wx = L
CS = L mean s CS1 = L, CS2 = H and CS2 = L
CS = H means CS1 = H, or CS1 = L and CS 2 = H, or CS 1 = L, and CS 2 = L
tCES
tCD
tLZC
A4
Q4
TIMING WAVEFORM OF CS OPERATION
A5
D5
tCH
tCYC
tCL
Undefined
Don′t Care
K7M323625M
K7M321825M
1Mx36 & 2Mx18 Flow-Through NtRAMTM
Nov. 2003
Rev 2.0
K7M323625M
K7M321825M
1Mx36 & 2Mx18 Flow-Through NtRAMTM
PACKAGE DIMENSIONS
100-TQFP-1420A
Units ; millimeters/Inches
0~8°
22.00 ±0.30
20.00 ±0.20
0.127
16.00
+ 0.10
- 0.05
± 0.30
14.00 ± 0.20
0.10 MAX
(0.83)
0.50
#1
0.65
±0.10
(0.58)
0.30 ± 0.10
0.10 MAX
1.40
0.50
± 0.10
- 18 -
± 0.10
1.60 MAX
0.05 MIN
Nov. 2003
Rev 2.0