Toshiba MT3S21P Vhf-uhf low-noise, low-distortion amplifier application Datasheet

MT3S21P
TOSHIBA Transistor
Silicon NPN Epitaxial Planar Type
MT3S21P
VHF-UHF Low-Noise, Low-Distortion Amplifier Application
Unit: mm
FEATURES
•
Low-Noise Figure: NF=1.55 dB (typ.) (@f=1 GHz)
•
High Gain: |S21e|2=11 dB (typ.) (@f=1 GHz)
Marking
T 2
PW-Mini
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (Typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
12
V
Collector-emitter voltage
VCEO
6
V
Emitter-base voltage
VEBO
2
V
Collector-current
IC
80
mA
Base-current
IB
10
mA
Collector power dissipation
PC
400
mW
Collector power dissipation
PC(Note 1)
1.8
W
Tj
150
°C
Tstg
−55 to 150
°C
Junction temperature
Storage temperature range
Note 1: The device is mounted on a ceramic board (25mm x 25mm x 0.8 mm (t))
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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MT3S21P
Microwave Characteristics (Ta = 25°C)
Characteristics
Transition frequency
Symbol
Noise figure
Typ.
Max
Unit
GHz
VCE=5 V, IC=50 mA
7
9
⎯
VCE=5 V, IC=50 mA, f=500 MHz
⎯
16.5
⎯
2
|S21e| (2)
VCE=5 V, IC=50 mA, f=1 GHz
8
11
⎯
NF
VCE=5 V, IC=20 mA, f=1 GHz
⎯
1.55
1.95
dB
31
35
⎯
dBmW
Min
Typ.
Max
Unit
rd
3 order intermodulation distortion output
intercept point
Min
2
fT
|S21e| (1)
Insertion gain
Test Condition
OIP3
VCE=5 V,IC=50 mA,f=500 MHz,
⊿f=1 MHz
dB
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
ICBO
VCB=6 V, IE=0 A
⎯
⎯
100
nA
Emitter cut-off current
IEBO
VEB=1 V, IC=0 A
⎯
⎯
100
nA
DC current gain
hFE
VCE=5 V, IC=50 mA
100
⎯
250
⎯
Reverse transfer capacitance
Cre
VCB=5 V, IE=0 A, f=1 MHz (Note 3)
⎯
0.85
1.1
pF
Note 3: Cre is measured using a 3-terminal method with capacitance bridge
Caution:
This device is sensitive to electrostatic discharge.
Please make tool and equipment earthed enough when you handle.
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MT3S21P
hFE - IC
100
1000
COMMON EMITTER
VCE=5V
Ta=25℃
Collector-current IC(mA)
100
COMMON EMITTER
VCE=5V
Ta=25℃
10
1
0.1
0.01
0.001
10
1
10
100
0
Collector-current IC(mA)
0.2
640μA 560μA
80
480μA
400μA
60
320μA
40
240μA
160μA
20
80μA
0
0
2
4
6
9
VCE=5V
Ta=25℃
8
7
6
5
4
3
2
1
0
8
1
Collector-emitter voltage VCE(V)
10
VCE=5V
Ta=25℃
NF, Ga -IC
4
f=500MHz
12
10
f=1000MHz
8
6
4
2
16
VCE=5V
f=1GHz
Ta=25℃
3.5
14
Noise figure NF(dB)
Insertion gain |S21e|2(dB)
16
100
Collector-current IC(mA)
|S21e|2-IC
18
14
Ga
3
12
2.5
10
2
8
NF
1.5
10
4
0.5
2
1
100
Collector-current IC(mA)
6
1
0
0
1
1
10
Transition frequency fT(GHz)
Collector-current IC(mA)
720μA
0.8
fT - IC
COMMON EMITTER
Ta=25℃
IB=800μA
0.6
Base-emitter voltage VBE(V)
IC - VCE
100
0.4
Associated gain Ga(dB)
DC current gain hFE
IC - VBE
0
100
10
Collector-current IC(mA)
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MT3S21P
IE=0
f=1MHz
Ta=25℃
1.8
Cob
1.6
1.4
1.2
Cre
1.0
0.8
0.6
0.4
0.2
0.0
0.1
1
10
Collector-base voltage VCB(V)
Third order intermodulation distortion
output intercept point OIP3(dBmW)
OIP3 - IC
2.0
Output capacitance Cob(pF)
Reverse transfer capacitance Cre(pF)
Cre, Cob - VCB
38
36
VCE=5V
34
32
VCE=4V
30
28
26
24
22
Pin=-15dBmW
f=500MHz
(⊿1MHz)
Ta=25℃
20
18
10
100
Collector-current IC(mA)
Collector power dissipation PC(mW)
P C - Ta
2000
The device is mounted on a ceramicboard(25mm×25mm×0.8mm(t))
1800
1600
1400
1200
1000
800
Device only
600
400
200
0
0
25
50
75
100
125
150
Ambient temperature Ta(°C )
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MT3S21P
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in
this document, and related hardware, software and systems (collectively “Product”) without notice.
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written permission, reproduction is permissible only if reproduction is without alteration/omission.
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury
or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to
and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications,
the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor
Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible
for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of
this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document,
or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all
operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN
OR APPLICATIONS.
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is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability
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