HAT1065T Silicon P Channel MOS FET High Speed Power Switching REJ03G0161-0200 Rev.2.00 Aug 06, 2007 Features • Low on-resistance • Capable of –4 V gate drive • High density mounting Outline RENESAS Package code: PTSP0008JB-B (Package name: TSSOP-8 <TTP-8DV> ) 1 D 87 8 D 65 4 G 12 5 G 34 S3 S6 MOS1 MOS2 1, 8 3, 6 4, 5 2, 7 Drain Source Gate NC Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR Pch Note2 Pch Note3 Ratings –200 ±15 –0.25 –1 –0.25 1 1.5 Unit V V A A A W W Tch Tstg 150 –55 to +150 °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s 3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s REJ03G0161-0200 Rev.2.00 Aug 06, 2007 Page 1 of 3 HAT1065T Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF Notes: 4. Pulse test REJ03G0161-0200 Rev.2.00 Aug 06, 2007 Page 2 of 3 Min –200 ±15 — — –1.0 — — — 0.29 — — — — — — — — Typ — — — — — 5.0 6.0 7.0 0.45 140 37 10 12 9 25 15 –0.9 Max — — ±10 –5 –2.0 6.2 7.5 10.0 — — — — — — — — –1.4 Unit V V µA µA V Ω Ω Ω S pF pF pF ns ns ns ns V Test Conditions ID = –10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±12 V, VDS = 0 VDS = –200 V, VGS = 0 VDS = –10 V, ID = –1 mA ID = –0.25 A, VGS = –10 V Note4 ID = –0.25 A, VGS = –4 V Note4 ID = –1 A, VGS = –5 V Note4 ID = –0.25 A, VDS = –10 V Note4 VDS = –10 V VGS = 0 f = 1 MHz VGS = –5 V, ID = –0.25 A VDD ≅ –30 V IF = –0.25 A, VGS = 0 Note4 HAT1065T Package Dimensions Package Name TSSOP-8 JEITA Package Code P-TSSOP8-4.4 × 3-0.65 RENESAS Code PTSP0008JB-B Previous Code TTP-8DV MASS[Typ.] 0.034g F *1 D 8 5 c Index mark HE *2 E bp 1 4 Z Terminal cross section *3 bp (Ni/Pd/Au plating) x M e NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. Reference Dimension in Millimeters Symbol Min D E A2 A1 A bp b1 c c1 A1 A L1 L y HE e x y Z L L1 Detail F Ordering Information Part No. HAT1065T-EL-E Quantity 3000 pcs REJ03G0161-0200 Rev.2.00 Aug 06, 2007 Page 3 of 3 Shipping Container Taping Nom Max 3.00 3.30 4.40 0.03 0.07 0.10 1.10 0.15 0.20 0.25 0.10 0.15 0.20 0° 8° 6.20 6.40 6.60 0.65 0.13 0.10 0.805 0.40 0.50 0.60 1.0 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. 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