Vishay GSIB6A20 Single-phase single in-line bridge rectifier Datasheet

GSIB6A20 thru GSIB6A80
Vishay General Semiconductor
Single-Phase Single In-Line Bridge Rectifiers
FEATURES
• UL recognition file number E54214
• Thin single in-line package
• Glass passivated chip junction
• High surge current capability
~
• High case dielectric strength of 1500 VRMS
~
~
~
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Case Style GSIB-5S
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for switching power supply, home
appliances, office equipment, industrial automation
applications.
PRIMARY CHARACTERISTICS
IF(AV)
6A
VRRM
200 V to 800 V
IFSM
150 A
IR
10 µA
VF
1.0 V
TJ max.
150 °C
MECHANICAL DATA
Case: GSIB-5S
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
GSIB6A20
GSIB6A40
GSIB6A60
GSIB6A80
UNIT
Maximum repetitive peak reverse voltage
VRRM
200
400
600
800
V
Maximum RMS voltage
VRMS
140
280
420
560
V
VDC
200
400
600
800
V
Maximum DC blocking voltage
Maximum average forward
rectified output current at
TC = 100 °C
TA = 25 °C
Peak forward surge current single sine-wave
superimposed on rated load
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
(1)
IF(AV)
6.0
2.8 (2)
A
IFSM
150
A
I2t
93
A2 s
TJ, TSTG
- 55 to + 150
°C
Notes:
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
Document Number: 88649
Revision: 31-Jan-08
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
GSIB6A20 thru GSIB6A80
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL
GSIB6A20
GSIB6A40
GSIB6A60
GSIB6A80
UNIT
Maximum instantaneous forward
voltage drop per diode
3.0 A
VF
1.00
V
Maximum DC reverse current at
rated DC blocking voltage per diode
TA = 25 °C
TA = 125 °C
IR
10
250
µA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
GSIB6A20
GSIB6A40
RθJA
RθJC
Maximum thermal resistance
GSIB6A60
GSIB6A80
UNIT
(2)
22
3.4 (1)
°C/W
Notes:
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
(3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
GSIB6A60-E3/45
7.0
45
20
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
150
Peak Forward Surge Current (A)
Average Forward Output Current (A)
8
Heatsink Mounting, TC
6
4
P.C.B. Mounting, TA
2
0
TJ = TJ Max.
Single Sine-Wave
100
50
1.0 Cycle
0
0
50
100
150
1
10
100
Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Derating Curve Output Rectified Current
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88649
Revision: 31-Jan-08
GSIB6A20 thru GSIB6A80
Vishay General Semiconductor
1000
TJ = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
10
1
TJ = 25 °C
TJ = 125 °C
0.1
0.01
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
100
10
1
0.1
1.2
100
10
Reverse Voltage (V)
Figure 3. Typical Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
1000
100
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (µA)
1
Instantaneous Forward Voltage (V)
TJ = 150 °C
100
TJ = 125 °C
10
1
0.1
TJ = 25 °C
10
1
0.01
20
40
60
80
0.1
0.01
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Heating Time (s)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in millimeters
Case Style GSIB-5S
4.6 ± 0.2
3.5 ± 0.2
11 ± 0.2
20 ± 0.3
5
+
3.2 ± 0.2
3.6 ± 0.2
30 ± 0.3
2.2 ± 0.2
1 ± 0.1
10 ± 0.2
Document Number: 88649
Revision: 31-Jan-08
7.5
± 0.2
7.5
± 0.2
17.5 ± 0.5
4 ± 0.2
2.5 ± 0.2
0.7 ± 0.1
2.7 ± 0.2
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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